BLA1011-10 [NXP]
Avionics LDMOS transistor; 航空电子LDMOS晶体管
| 型号： | BLA1011-10 |
| 厂家： | 
NXP |
| 描述： | Avionics LDMOS transistor |
| 文件： | 总9页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLA1011-10
Avionics LDMOS transistor
Product specification
2003 Nov 19
Supersedes data of 2002 Oct 02
Philips Semiconductors
Product specification
Avionics LDMOS transistor
BLA1011-10
FEATURES
PINNING - SOT467C
PIN
• High power gain
DESCRIPTION
• Easy power control
• Excellent ruggedness
1
2
3
drain
gate
• Source on mounting base eliminates DC isolators,
reducing common mode inductance.
source, connected to flange
APPLICATIONS
1
• Avionics transmitter applications in the
1030 to 1090 MHz frequency range.
3
DESCRIPTION
2
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the flange.
MBK584
Top view
Fig.1 Simplified outline (SOT467C).
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
f
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
MODE OF OPERATION
(MHz)
Pulsed class-AB;
tp = 50 µs; δ = 2 %
1030 to 1090
36
10
>15
>40
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BLA1011-10
−
flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT467C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
VDS drain-source voltage
MIN.
MAX.
75
UNIT
−
−
−
−
V
VGS
ID
gate-source voltage
drain current (DC)
±15
2.2
V
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Th ≤ 25 °C
25
W
°C
°C
−65
+150
200
−
2003 Nov 19
2
Philips Semiconductors
Product specification
Avionics LDMOS transistor
BLA1011-10
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Tmb = 25 °C; note 1
note 2
VALUE UNIT
Zth(j-mb)
thermal impedance from junction to mounting base
thermal resistance from mounting base to heatsink
1.2
K/W
K/W
Rth(mb-h)
0.55
Notes
1. Thermal impedance is determined under RF operating conditions with pulsed bias.
2. Typical value for SOT467C mounted with thermal compound and 0.6 Nm fastening torque.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
75
TYP.
MAX.
UNIT
V(BR)DSS
VGSth
IDSS
drain-source breakdown voltage VGS = 0; ID = 0.7 mA
−
−
−
−
−
−
V
gate-source threshold voltage
drain-source leakage current
on-state drain current
VDS = 10 V; ID = 20 mA
VGS = 0; VDS = 28 V
4
5
V
−
0.1
−
mA
A
IDSX
VGS = VGSth + 9 V; VDS = 10 V 2.8
IGSS
gate leakage current
VGS = ±15 V; VDS = 0
−
−
−
40
−
nA
S
gfs
forward transconductance
VDS = 10 V; ID = 0.75 A
0.5
1.2
RDSon
drain-source on-state resistance VGS = 10 V; ID = 0.75 A
−
Ω
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th = 25 °C; Rth mb-h = 0.55 K/W unless otherwise specified.
MODE OF
OPERATION
f
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
tr
(ns)
tf
(ns)
PULSE DROOP
(dB)
(MHz)
Pulsed class-AB;
tp = 50 µs; δ = 2%
1030 to 1090
36
50
10
>15
>40
<20
<20
<0.5
Ruggedness in class-AB operation
The BLA1011-10 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under
the operating conditions.
Typical impedance values
FREQUENCY
(MHz)
ZS
(Ω)
ZL
(Ω)
1030
1060
1090
1 + j 10.6
1.3 + j 6.99
1.42 + j 7
4.3 + j 7
5.99 + j 13.98
7 + j 11.58
2003 Nov 19
3
Philips Semiconductors
Product specification
Avionics LDMOS transistor
BLA1011-10
MGU494
MGU493
15
24
60
handbook, halfpage
handbook, halfpage
η
η
G
D
p
D
(%)
50
P
L
(W)
(dB)
20
G
p
10
16
12
8
40
30
20
10
0
(1)
(2)
(3)
(1)
(2)
(3)
5
0
4
0
0
0
50
100
150
5
10
15
P
(W)
P
(mW)
L
D
Th = 25 °C; VDS = 36 V; IDQ = 50 mA; class-AB;
tp = 50 µs; δ = 2%.
Th = 25 °C; VDS = 36 V; IDQ = 50 mA; class-AB;
tp = 50 µs; δ = 2%.
(1) f = 1090 MHz.
(2) f = 1060 MHz.
(3) f = 1030 MHz.
(1) f = 1090 MHz.
(2) f = 1060 MHz.
(3) f = 1030 MHz.
Fig.2 Load power as a function of drive power;
typical values.
Fig.3 Power gain and efficiency as functions of
load power; typical values.
MGU496
MGU495
12
24
p
handbook, halfpage
handbook, halfpage
G
(dB)
20
P
L
(W)
8
16
12
4
0
8
4
0
1000
0
1
2
3
4
5
1040
1080
1120
f (MHz)
V
(V)
GS
Th = 25 °C; VDS = 36 V; IDQ = 50 mA; class-AB;
PL = 10 W; tp = 50 µs; δ = 2%.
Th = 25 °C; VDS = 36 V; IDQ = 50 mA; class-AB;
f = 1090 MHz; tp = 50 µs; δ = 2%.
Fig.4 Power gain as a function of frequency;
typical values.
Fig.5 Load power as a function of gate-source
voltage; typical values.
2003 Nov 19
4
Philips Semiconductors
Product specification
Avionics LDMOS transistor
BLA1011-10
51.75
51.75
C13
C14
C12
C7 C6
C5
C9
C1 C2
C3
C4
C11
R1
60
C8
3.5
C15
C10
3.2
13.5
6.0
9.3
37.5
MGU497
Dimensions in mm.
The components are situated on one side of the Rogers 6006 printed-circuit board (thickness = 0.64 mm; εr = 6.2), the other side is unetched
and serves as a ground plane. Earth connections from the component side to the ground plane are made by through-metallization.
Fig.6 Printed-circuit board for class-AB test circuit.
List of components for class-AB test circuit (see Fig.6)
COMPONENT
DESCRIPTION
VALUE
C1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
tekelec trimmer; type 37293
2.7 pF
56 pF
C2, C11
C3
0.8 to 8 pF
3.6 pF
6.2 pF
2 pF
C4
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 2
electrolytic capacitor
C5
C6
C7, C13
C8
62 pF
11 pF
C9
1.5 pF
6.2 pF
20 nF
C10
C12
C14
C15
R1
4.7 µF; 50 V
36 pF
multilayer ceramic chip capacitor; note 1
SMD resistor (0805)
22 Ω
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 200B or capacitor of same quality.
2003 Nov 19
5
Philips Semiconductors
Product specification
Avionics LDMOS transistor
BLA1011-10
PACKAGE OUTLINE
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT467C
D
A
F
B
3
D
1
U
1
q
C
c
1
E
1
H
U
E
2
A
w
p
M
M
M
B
A
1
2
Q
w
M
M
C
b
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
A
b
c
D
D
E
E
F
H
p
Q
q
U
U
w
1
w
2
1
1
1
2
4.67
3.94
3.43 2.21
3.18 1.96
20.45 5.97
20.19 5.72
5.59 0.15
5.33 0.10
9.25
9.04
9.27
9.02
5.92
5.77
5.97 1.65 18.54
5.72 1.40 17.02
14.27
0.562
0.25
0.51
0.135 0.087
0.125 0.077
0.805 0.235
0.795 0.225
0.184 0.220 0.006 0.364 0.365 0.233 0.235 0.065 0.73
0.155 0.210 0.004 0.356 0.355 0.227 0.225 0.055 0.67
inch
0.010 0.020
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
99-12-06
99-12-28
SOT467C
2003 Nov 19
6
Philips Semiconductors
Product specification
Avionics LDMOS transistor
BLA1011-10
DATA SHEET STATUS
DATASHEET PRODUCT
LEVEL
DEFINITION
STATUS(1)
STATUS(2)(3)
I
Objective
data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary
data
Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips Semiconductors
reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
III
Product data Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order to
improve the design, manufacturing and supply. Relevant changes will be
communicated via a Customer Product/Process Change Notification (CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Nov 19
7
Philips Semiconductors
Product specification
Avionics LDMOS transistor
BLA1011-10
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Nov 19
8
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R77/05/pp9
Date of release: 2003 Nov 19
Document order number: 9397 750 12244
相关型号：
BLA1011-200.112
200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz.
NXP
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