BLA1011-200R [NXP]
Avionics LDMOS transistors; 航空电子LDMOS晶体管
| 型号： | BLA1011-200R |
| 厂家： | 
NXP |
| 描述： | Avionics LDMOS transistors |
| 文件： | 总13页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLA1011-200R; BLA1011S-200R
Avionics LDMOS transistors
Rev. 01 — 23 February 2010
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS avionics power transistor for transmitter applications at frequencies from
1030 MHz to 1090 MHz.
Table 1.
Typical performance
RF performance at Th = 25 °C in a common source class-AB test circuit; IDq = 150 mA;
typical values.
Mode of operation
Conditions
VDS
(V)
PL
(W)
Gp
(dB) (%)
ηD
tr
(ns)
tf
(ns)
Pulsed class-AB:
1030 MHz to 1090 MHz
tp = 50 μs; δ = 2 %
tp = 128 μs; δ = 2 %
tp = 340 μs; δ = 1 %
36
36
36
200
250
250
15
14
14
50
50
50
35
35
35
6
6
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz,
a supply voltage of 36 V and an IDq of 150 mA:
Load power ≥ 200 W
Gain ≥ 13 dB
Efficiency ≥ 45 %
Rise time ≤ 50 ns
Fall time ≤ 50 ns
High power gain
Easy power control
Excellent ruggedness
Source on mounting flange eliminates DC isolators, reducing common mode
inductance
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLA1011-200R; BLA1011S-200R
NXP Semiconductors
Avionics LDMOS transistors
1.3 Applications
Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.
2. Pinning information
Table 2.
Pin
BLA1011-200R (SOT502A)
Pinning
Description
Simplified outline
Graphic symbol
1
2
3
drain
gate
1
1
3
2
[1]
2
source
3
sym039
BLA1011S-200R (SOT502B)
1
2
3
drain
gate
1
1
3
2
[1]
2
source
3
sym039
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLA1011-200R
BLA1011S-200R
-
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
SOT502A
-
earless flanged LDMOST ceramic package; 2 leads
SOT502B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
Ptot
Parameter
Conditions
Min
Max Unit
drain-source voltage
gate-source voltage
total power dissipation
storage temperature
junction temperature
-
75
22
700
V
-
V
Th ≤ 25 °C; tp = 50 μs; δ = 2 %
-
W
Tstg
−65
+150 °C
200 °C
Tj
-
BLA1011-200R_1011S-200R_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 23 February 2010
2 of 13
BLA1011-200R; BLA1011S-200R
NXP Semiconductors
Avionics LDMOS transistors
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ
Unit
[1]
Zth(j-h)
transient thermal impedance from junction to Th = 25 °C
heatsink
0.15
K/W
[1] Thermal resistance is determined under RF operating conditions; tp = 50 μs, δ = 10 %.
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3 mA
75
4
-
-
-
-
-
V
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
VDS = 10 V; ID = 300 mA
VGS = 0 V; VDS = 36 V
5
1
-
V
-
μA
A
IDSX
drain cut-off current
VGS = VGS(th) + 9 V;
VDS = 10 V
45
IGSS
gfs
gate leakage current
VGS = 20 V; VDS = 0 V
VDS = 10 V; ID = 10 A
-
-
-
-
1
-
μA
S
forward transconductance
9
RDS(on) drain-source on-state resistance VGS = 9 V; ID = 10 A
60
-
mΩ
7. Application information
Table 7.
Application information
RF performance in a common source pulsed class-AB circuit; (tp = 50 μs; δ = 2 %); f = 1030 MHz
and 1090 MHz; Th = 25 °C; Zth(mb-h) = 0.15 K/W; IDq = 150 mA; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V
VDS
PL
Gp
ηD
tr
drain-source voltage
-
36
-
output power
power gain
drain efficiency
rise time
tp = 50 μs; δ = 2 %
PL = 200 W
-
200
W
13
45
-
-
-
-
-
dB
%
tp = 50 μs; δ = 2 %
50
50
ns
ns
tf
fall time
-
7.1 Ruggedness in class-AB operation
The BLA1011-200R and BLA1011S-200R are capable of withstanding a load mismatch
corresponding to VSWR = 5 : 1 through all phases under the following conditions:
V
DS = 36 V; f = 1030 MHz to 1090 MHz at rated load power.
BLA1011-200R_1011S-200R_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 23 February 2010
3 of 13
BLA1011-200R; BLA1011S-200R
NXP Semiconductors
Avionics LDMOS transistors
mgw033
mgw034
20
80
250
L
(W)
200
P
η
G
p
(dB)
D
(%)
G
p
15
10
5
60
150
100
50
40
20
0
η
D
0
0
0
50
100
150
200
250
0
2
4
6
8
P
(W)
P
(W)
D
L
VDS = 36 V; IDq = 150 mA; f = 1060 MHz; tp = 50 μs;
δ = 2 %
VDS = 36 V; IDq = 150 mA; f = 1060 MHz; tp = 50 μs;
δ = 2 %
Fig 1. Power gain and drain efficiency as functions
of load power; typical values
Fig 2. Load power as a function of drive power;
typical values
mgw035
mgw036
250
20
20
G
p
P
G
p
L
(dB)
16
I
(W)
(dB)
16
Dq
= 1.5 A
150 mA
200
G
p
150
100
50
12
8
12
8
P
L
4
4
0
0
0
0
50
100
150
200
250
(W)
0
1
2
3
4
5
P
V
GS
(V)
L
VDS = 36 V; f = 1060 MHz; tp = 50 μs; δ = 2 %
VDS = 36 V; IDq = 150 mA; Pi = 5.5 W; f = 1060 MHz;
tp = 50 μs; δ = 2 %
Fig 3. Power gain as a function of load power; typical
values
Fig 4. Load power and power gain as functions of
gate-source voltage; typical values
BLA1011-200R_1011S-200R_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 23 February 2010
4 of 13
BLA1011-200R; BLA1011S-200R
NXP Semiconductors
Avionics LDMOS transistors
mgw037
mgw038
20
80
5
Z
i
η
(%)
G
p
(dB)
D
(W)
x
i
G
p
4
15
10
5
60
r
i
3
2
1
η
D
40
20
0
0
1020
0
1040
1060
1080
1100
f (MHz)
1020
1040
1060
1080
1100
f (MHz)
VDS = 36 V; IDq = 150 mA; PL = 200 W; tp = 50 μs;
δ = 2 %
VDS = 36 V; IDq = 150 mA; PL = 200 W; tp = 50 μs;
δ = 2 %
Fig 5. Power gain and drain efficiency a functions of
frequency; typical values
Fig 6. Input Impedance as a function of frequency
(series components); typical values
mgw039
4
Z
L
(W)
2
R
X
L
L
0
−2
−4
1020
1040
1060
1080
1100
f (MHz)
VDS = 36 V; IDq = 150 mA; PL = 200 W; tp = 50 μs; δ = 2 %
Fig 7. Load impedance as a function of frequency (series components); typical values
BLA1011-200R_1011S-200R_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 23 February 2010
5 of 13
BLA1011-200R; BLA1011S-200R
NXP Semiconductors
Avionics LDMOS transistors
8. Test information
40
40
60
C6
+
C10
C5
C9
C11
R2
C4
R1
C8
L1
C3
C7
C1
C2
mgw032
Dimensions in mm.
The components are situated on one side of the copper-clad Duroid Printed-Circuit Board (PCB) with εr = 6.2 and thickness
0.64 mm.
The other side is unetched and serves as a ground plane.
See Table 8 for list of components.
Fig 8. Component layout for 1030 MHz to 1090 MHz test circuit
BLA1011-200R_1011S-200R_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 23 February 2010
6 of 13
BLA1011-200R; BLA1011S-200R
NXP Semiconductors
Avionics LDMOS transistors
Table 8.
List of components (see Figure 8)
Component Description
Value
Dimensions
[1]
[2]
[1]
[1]
[1]
C1
multilayer ceramic chip capacitor
39 pF
C2
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
4.3 pF
C3
11 pF
C4, C7
C5
62 pF
100 pF
47 μF; 20 V
20 pF
C6
[2]
[1]
[3]
C8
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
C9
47 pF
C10
C11
L1
1.2 nF
47 μF; 63 V
Ω-shaped enamelled 1 mm copper wire
metal film resistor
length = 38 mm
R1
301 Ω
18 Ω
R2
SMD 0508 resistor
[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
[3] American Technical Ceramics type 700 or capacitor of same quality.
BLA1011-200R_1011S-200R_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 23 February 2010
7 of 13
BLA1011-200R; BLA1011S-200R
NXP Semiconductors
Avionics LDMOS transistors
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D
1
U
1
B
q
c
C
1
L
p
E
E
H
U
1
2
w
M
M
M
B
A
1
A
2
w
5
b
M
M
C
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
UNIT
1
1
1
2
1
12.83
12.57
3.38
3.12
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
34.16 9.91
33.91 9.65
0.15
0.08
27.94
1.100
0.25
0.01
0.51
0.02
mm
0.505
0.495
0.133 0.067
0.123 0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
1.345 0.390
1.335 0.380
0.006
0.003
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-12-28
03-01-10
SOT502A
Fig 9. Package outline SOT502A
BLA1011-200R_1011S-200R_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 23 February 2010
8 of 13
BLA1011-200R; BLA1011S-200R
NXP Semiconductors
Avionics LDMOS transistors
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D
1
c
U
1
1
L
E
E
H
U
1
2
2
w
5
b
M
M
D
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
Q
U
U
w
UNIT
1
1
1
2
2
12.83
12.57
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
20.70 9.91
20.45 9.65
0.15
0.08
0.25
mm
0.505
0.495
0.067
0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
0.815 0.390
0.805 0.380
0.006
0.003
0.010
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
03-01-10
07-05-09
SOT502B
Fig 10. Package outline SOT502B
BLA1011-200R_1011S-200R_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 23 February 2010
9 of 13
BLA1011-200R; BLA1011S-200R
NXP Semiconductors
Avionics LDMOS transistors
10. Abbreviations
Table 9.
Abbreviations
Description
Acronym
IDq
quiescent drain current
LDMOS
LDMOST
RF
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
SMD
Surface Mount Device
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 10. Revision history
Document ID
Release date Data sheet status
20100223 Product data sheet
Change notice Supersedes
BLA1011-200R_1011S-200R_1
-
-
BLA1011-200R_1011S-200R_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 23 February 2010
10 of 13
BLA1011-200R; BLA1011S-200R
NXP Semiconductors
Avionics LDMOS transistors
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
12.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
12.3 Disclaimers
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Non-automotive qualified products — Unless the data sheet of an NXP
Semiconductors product expressly states that the product is automotive
qualified, the product is not suitable for automotive use. It is neither qualified
nor tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
BLA1011-200R_1011S-200R_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 23 February 2010
11 of 13
BLA1011-200R; BLA1011S-200R
NXP Semiconductors
Avionics LDMOS transistors
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLA1011-200R_1011S-200R_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 23 February 2010
12 of 13
BLA1011-200R; BLA1011S-200R
NXP Semiconductors
Avionics LDMOS transistors
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1.1
1.2
1.3
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
3
4
5
6
7
7.1
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 23 February 2010
Document identifier: BLA1011-200R_1011S-200R_1
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