BLA6G1011-200R [NXP]
Power LDMOS transistor; 功率LDMOS晶体管型号: | BLA6G1011-200R |
厂家: | NXP |
描述: | Power LDMOS transistor |
文件: | 总11页 (文件大小:183K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BLA6G1011-200R
Power LDMOS transistor
Rev. 02 — 1 March 2010
Preliminary data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to
1090 MHz.
Table 1.
Test information
Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation
f
VDS
(V)
28
PL
Gp
ηD
tr
tf
(MHz)
(W)
200
(dB)
20
(%)
65
(ns)
10
(ns)
6
pulsed class-AB
1030 to 1090
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
Typical pulsed RF performance at frequencies of 1030 MHz and 1090 MHz, a supply
voltage of 28 V and an IDq of 100 mA:
Output power = 200 W
Power gain = 20 dB
Efficiency = 65 %
Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1030 MHz to 1090 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.
BLA6G1011-200R
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
drain
Simplified outline
Graphic symbol
1
1
2
gate
3
[1]
3
source
2
2
3
sym112
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLA6G1011-200R
-
flanged LDMOST ceramic package; 2 mounting holes; SOT502A
2 leads
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
Unit
V
drain-source voltage
gate-source voltage
drain current
-
65
−0.5 +13
V
-
49
A
Tstg
Tj
storage temperature
junction temperature
−65
+150 °C
-
225
°C
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ
Unit
Zth(j-c)
transient thermal impedance from junction to case Tcase = 25 °C;
tp = 50 μs; δ = 2 %
0.085 K/W
BLA6G1011-200R_2
© NXP B.V. 2010. All rights reserved.
Preliminary data sheet
Rev. 02 — 1 March 2010
2 of 11
BLA6G1011-200R
NXP Semiconductors
Power LDMOS transistor
6. Characteristics
Table 6. DC characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.9 mA
65
-
-
V
VGS(th) gate-source threshold voltage VDS = 10 V; ID = 270 mA 1.4
2.0
2.2
2.4
2.7
V
V
VGSq
gate-source quiescent voltage VDS = 28 V;
ID = 1620 mA
1.7
IDSS
IDSX
drain leakage current
drain cut-off current
VGS = 0 V; VDS = 28 V
VGS = VGS(th) + 3.75 V;
DS = 10 V
-
-
4.2
-
μA
40
48
A
V
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 9.45 A
-
-
420
26
nA
S
forward transconductance
11
18
RDS(on) drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 9.45 A
0.012 0.07 0.093
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 28 V;
f = 1 MHz
-
3
-
pF
Table 7. RF characteristics
Mode of operation: Pulsed RF; tp = 50 μs; δ = 2 %; VDS = 28 V; IDq = 100 mA; Tcase = 25 °C; unless
otherwise specified; in a class-AB production test circuit.
Symbol Parameter
Conditions
Min
200
18
8
Typ
-
Max Unit
PL
Gp
RLin
ηD
tr
output power
power gain
input return loss
drain efficiency
rise time
-
W
PL = 200 W
PL = 200 W
PL = 200 W
PL = 200 W
PL = 200 W
20
10
65
10
6
-
dB
dB
%
-
58
-
-
20
20
ns
ns
tf
fall time
-
6.1 Ruggedness in class-AB operation
The BLA6G1011-200R is an enhanced rugged device and is capable of withstanding a
load mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: tp = 50 μs; δ = 2 %; VDS = 28 V; IDq = 100 mA; PL = 200 W;
f = 1030 MHz to 1090 MHz.
BLA6G1011-200R_2
© NXP B.V. 2010. All rights reserved.
Preliminary data sheet
Rev. 02 — 1 March 2010
3 of 11
BLA6G1011-200R
NXP Semiconductors
Power LDMOS transistor
7. Application information
7.1 Impedance information
Table 8.
Typical impedance
Typical values unless otherwise specified.
f
ZS
ZL
MHz
1030
1060
1090
Ω
Ω
0.57 − j0.94
0.70 − j1.13
0.80 − j1.53
0.80 − j0.68
0.84 − j0.52
0.86 − j0.35
drain
Z
L
gate
Z
S
001aaf059
Fig 1. Definition of transistor impedance
7.2 RF performance
001aak266
001aak267
250
22
P
G
p
L
(W)
(dB)
(1)
(2)
(3)
200
20
150
100
50
18
16
14
12
(1)
(2)
(3)
0
0
1
2
3
4
0
50
100
150
200
250
P (W)
L
P (W)
i
VDS = 28 V; tp = 50 μs; δ = 2 %; IDq = 100 mA.
VDS = 28 V; tp = 50 μs; δ = 2 %; IDq = 100 mA.
(1) f = 1030 MHz
(2) f = 1060 MHz
(3) f = 1090 MHz
(1) f = 1030 MHz
(2) f = 1060 MHz
(3) f = 1090 MHz
Fig 2. Output power as a function of input power;
typical values
Fig 3. Power gain as a function of load power;
typical values
BLA6G1011-200R_2
© NXP B.V. 2010. All rights reserved.
Preliminary data sheet
Rev. 02 — 1 March 2010
4 of 11
BLA6G1011-200R
NXP Semiconductors
Power LDMOS transistor
001aak268
001aak269
70
25
20
15
10
5
75
η
D
(%)
G
p
η
D
(%)
RL
in
60
50
40
30
20
10
0
G
(dB)
p
70
65
60
55
50
(1)
(2)
(3)
η
D
RL
in
0
0
50
100
150
200
250
(W)
1020
1040
1060
1080
1100
P
L
f (MHz)
VDS = 28 V; tp = 50 μs; δ = 2 %; IDq = 100 mA.
PL = 200 W; VDS = 28 V; tp = 50 μs; δ = 2 %;
Dq = 100 mA.
I
(1) f = 1030 MHz
(2) f = 1060 MHz
(3) f = 1090 MHz
Fig 4. Drain efficiency as a function of load power;
typical values
Fig 5. Power gain, input return loss and drain
efficiency as function of frequency;
typical values
7.3 Application circuit
+
C5
C6
C7
C2
C1
R1
C8
C3
C4
001aak270
See Table 9 for list of components.
Fig 6. Component layout for class-AB application circuit
BLA6G1011-200R_2
© NXP B.V. 2010. All rights reserved.
Preliminary data sheet
Rev. 02 — 1 March 2010
5 of 11
BLA6G1011-200R
NXP Semiconductors
Power LDMOS transistor
Table 9.
List of components
See Figure 6.
Striplines are on a Rogers Duroid 6010 Printed-Circuit Board (PCB); εr = 6.15 F/m;
thickness = 0.64 mm
Component Description
Value
Remarks
C1, C6
C2
multilayer ceramic chip capacitor 10 μF
multilayer ceramic chip capacitor 68 pF
multilayer ceramic chip capacitor 1.5 pF
multilayer ceramic chip capacitor 3.9 pF
multilayer ceramic chip capacitor 30 pF
TDK
[1]
[1]
[1]
[2]
C3
C4
C5, C8
C7
electrolytic capacitor
SMD resistor
470 μF; 63 V
12 Ω
R1
1206
[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
BLA6G1011-200R_2
© NXP B.V. 2010. All rights reserved.
Preliminary data sheet
Rev. 02 — 1 March 2010
6 of 11
BLA6G1011-200R
NXP Semiconductors
Power LDMOS transistor
8. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D
1
U
1
B
q
c
C
1
L
p
E
E
1
H
U
2
w
M
M
M
B
A
1
A
2
w
5
b
M
M
C
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
UNIT
1
1
1
2
1
12.83
12.57
3.38
3.12
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
34.16 9.91
33.91 9.65
0.15
0.08
27.94
1.100
0.25
0.01
0.51
0.02
mm
0.505
0.495
0.133 0.067
0.123 0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
1.345 0.390
1.335 0.380
0.006
0.003
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-12-28
03-01-10
SOT502A
Fig 7. Package outline SOT502A
BLA6G1011-200R_2
© NXP B.V. 2010. All rights reserved.
Preliminary data sheet
Rev. 02 — 1 March 2010
7 of 11
BLA6G1011-200R
NXP Semiconductors
Power LDMOS transistor
9. Abbreviations
Table 10. Abbreviations
Acronym
CW
Description
Continuous Wave
LDMOS
LDMOST
RF
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
SMD
Surface Mounted Device
VSWR
Voltage Standing-Wave Ratio
10. Revision history
Table 11. Revision history
Document ID
Release date
20100301
Data sheet status
Change notice
Supersedes
BLA6G1011-200R_2
Modifications:
Preliminary data sheet
-
BLA6G1011-200R_1
• The status of this document has been changed to “Preliminary data sheet”.
BLA6G1011-200R_1
20090617
Objective data sheet
-
-
BLA6G1011-200R_2
© NXP B.V. 2010. All rights reserved.
Preliminary data sheet
Rev. 02 — 1 March 2010
8 of 11
BLA6G1011-200R
NXP Semiconductors
Power LDMOS transistor
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
11.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
11.3 Disclaimers
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Non-automotive qualified products — Unless the data sheet of an NXP
Semiconductors product expressly states that the product is automotive
qualified, the product is not suitable for automotive use. It is neither qualified
nor tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
BLA6G1011-200R_2
© NXP B.V. 2010. All rights reserved.
Preliminary data sheet
Rev. 02 — 1 March 2010
9 of 11
BLA6G1011-200R
NXP Semiconductors
Power LDMOS transistor
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLA6G1011-200R_2
© NXP B.V. 2010. All rights reserved.
Preliminary data sheet
Rev. 02 — 1 March 2010
10 of 11
BLA6G1011-200R
NXP Semiconductors
Power LDMOS transistor
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
3
4
5
6
6.1
7
Application information. . . . . . . . . . . . . . . . . . . 4
Impedance information. . . . . . . . . . . . . . . . . . . 4
RF performance . . . . . . . . . . . . . . . . . . . . . . . . 4
Application circuit . . . . . . . . . . . . . . . . . . . . . . . 5
7.1
7.2
7.3
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 1 March 2010
Document identifier: BLA6G1011-200R_2
相关型号:
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