BLC6G22LS-75 [NXP]
Power LDMOS transistor; 功率LDMOS晶体管
| 型号： | BLC6G22LS-75 |
| 厂家： | 
NXP |
| 描述： | Power LDMOS transistor |
| 文件： | 总11页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLC6G22-75; BLC6G22LS-75
Power LDMOS transistor
Rev. 01 — 7 February 2008
Objective data sheet
1. Product profile
1.1 General description
75 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1.
Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
VDS
(V)
28
PL(AV)
(W)
Gp
ηD
IMD3
(dBc)
−37[1]
ACPR
(dBc)
−41[1]
(MHz)
(dB)
18.5
(%)
31
2-carrier W-CDMA
2110 to 2170
17
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an IDq of 690 mA:
N Average output power = 17 W
N Gain = 18.5 dB
N Efficiency = 31 %
N IMD3 = −37 dBc
N ACPR = −41 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (2000 MHz to 2200 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLC6G22-75; BLC6G22LS-75
NXP Semiconductors
Power LDMOS transistor
1.3 Applications
I RF power amplifiers for W-CDMA base stations and multicarrier applications in the
2000 MHz to 2200 MHz frequency range
2. Pinning information
Table 2.
Pin
BLC6G22-75 (SOT895A)
Pinning
Description
Simplified outline
Symbol
1
2
3
drain
gate
1
3
1
3
2
[1]
source
2
sym112
BLC6G22LS-75 (SOT896B)
1
2
3
drain
gate
1
3
2
1
[1]
source
2
3
sym112
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLC6G22-75
-
-
plastic flanged cavity package; 2 mounting slots; 2 leads SOT895A
plastic earless flanged cavity package; 2 leads SOT896B
BLC6G22LS-75
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
65
Unit
V
drain-source voltage
gate-source voltage
drain current
-
−0.5 +13
V
-
18
A
Tstg
Tj
storage temperature
junction temperature
−65
+150 °C
225 °C
-
BLC6G22-75_BLC6G22LS-75_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01 — 7 February 2008
2 of 11
BLC6G22-75; BLC6G22LS-75
NXP Semiconductors
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
Rth(j-case)
Thermal characteristics
Parameter
thermal resistance from Tcase = 80 °C;
Conditions
Type
Typ
0.9
Unit
K/W
K/W
BLC6G22-75
BLC6G22LS-75
junction to case
PL = 17 W
0.75
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VGS = 0 V; ID = 0.5 mA
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
65
-
-
V
VGS(th)
VGSq
IDSS
gate-source threshold voltage VDS = 10 V; ID = 100 mA 1.40
gate-source quiescent voltage VDS = 28 V; ID = 690 mA 1.60
2
2.40
2.60
3
V
2.2
-
V
drain leakage current
drain cut-off current
VGS = 0 V; VDS = 28 V
-
µA
A
IDSX
VGS = VGS(th) + 3.75 V;
14.9
18.5
-
VDS = 10 V
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 5 A
-
-
-
-
280
nA
S
forward transconductance
7.2
0.15
-
-
RDS(on) drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 3.5 A
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 28 V;
f = 1 MHz
-
1.4
-
pF
7. Application information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz;
RF performance at VDS = 28 V; IDq = 690 mA; Tcase = 25 °C; unless otherwise specified; in a
class-AB production test circuit.
Symbol Parameter
Conditions
Min
Typ
17
Max
Unit
W
PL(AV)
Gp
average output power
-
-
power gain
PL(AV) = 17 W
PL(AV) = 17 W
PL(AV) = 17 W
17.3
18.5
−9.2
31
-
dB
dB
%
IRL
input return loss
drain efficiency
-
−6.5
-
ηD
28
-
IMD3
ACPR
third order intermodulation distortion PL(AV) = 17 W
adjacent channel power ratio PL(AV) = 17 W
−37
−41
−34
dBc
-
−38.5 dBc
7.1 Ruggedness in class-AB operation
The BLC6G22-75 and BLC6G22LS-75 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 690 mA; PL = 75 W (CW); f = 2170 MHz.
BLC6G22-75_BLC6G22LS-75_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01 — 7 February 2008
3 of 11
BLC6G22-75; BLC6G22LS-75
NXP Semiconductors
Power LDMOS transistor
7.2 One-tone CW
001aah688
60
20
G
η
p
D
(dB)
(%)
50
19
G
p
18
17
16
15
14
40
30
20
10
0
η
D
0
20
40
60
80
100
(W)
P
L
VDS = 28 V; IDq = 690 mA; f = 2140 MHz.
Fig 1. One-tone CW power gain and drain efficiency as functions of load power;
typical values
7.3 Two-tone CW
001aah689
001aah690
IMD3
20
p
60
η
(%)
−20
D
IMD
(dBc)
G
50
(dB)
−30
19
40
30
20
10
0
G
p
IMD5
IMD7
−40
−50
−60
η
D
18
17
0
40
80
120
160
L(PEP)
200
(W)
0
30
60
90
120
150
180
(W)
P
P
L(PEP)
VDS = 28 V; IDq = 690 mA; f = 2140 MHz (±100 kHz).
VDS = 28 V; IDq = 690 mA; f = 2140 MHz (±100 kHz).
Fig 2. Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
Fig 3. Two-tone CW intermodulation distortion as
function of peak envelope load power; typical
values
BLC6G22-75_BLC6G22LS-75_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01 — 7 February 2008
4 of 11
BLC6G22-75; BLC6G22LS-75
NXP Semiconductors
Power LDMOS transistor
7.4 2-carrier W-CDMA
001aah691
D
001aah692
21
50
−25
IMD3,
G
p
η
D
(%)
ACPR
(dBc)
IMD3
η
(dB)
20
−30
−35
−40
−45
−50
−55
40
ACPR
19
18
17
16
30
20
10
0
G
p
0
10
20
30
40
(W)
0
10
20
30
P
40
(W)
P
L(AV)
L(AV)
VDS = 28 V; IDq = 950 mA; f = 2140 MHz (±5 MHz);
VDS = 28 V; IDq = 690 mA; f = 2140 MHz (±5 MHz);
carrier spacing 10 MHz.
carrier spacing 10 MHz.
Fig 4. 2-carrier W-CDMA power gain and drain
efficiency as functions of average load power;
typical values
Fig 5. 2-carrier W-CDMA adjacent channel power ratio
and third order intermodulation distortion as
functions of average load power; typical values
8. Test information
R1
V
V
DD
GG
C22
C5
C6
C7
C23
R2
C8
C14
C9
C4
C10 C11 C12 C13
C1
C21
input
output
C2
C3
C20
C15
C19
001aah693
C16 C17 C18
The drawing is not to scale.
Fig 6. Test circuit for operation at 800 MHz
BLC6G22-75_BLC6G22LS-75_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01 — 7 February 2008
5 of 11
BLC6G22-75; BLC6G22LS-75
NXP Semiconductors
Power LDMOS transistor
C22
−
C23
+
R1
C7
C5
C6
R2
C10
C14
C9
C13
C11 C12
C8
C4
C1
C21
C3
C20
C2
C16 C17
C18
Geb. 6 output
PCB V2.1
Taconic RF35
(Er 3.5) TP
C19
C15
Gen 6 input PCB V2.1 Taconic RF35 (Er 3.5) TP
001aah694
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with
εr = 3.5 and thickness = 0.76 mm.
See Table 8 for list of components.
The drawing is not to scale.
Fig 7. Component layout
Table 8.
List of components (see Figure 6 and Figure 7)
Description Value
Component
C1
Remarks
[1]
[1]
[1]
multilayer ceramic chip capacitor 5.6 pF
multilayer ceramic chip capacitor 0.5 pF
multilayer ceramic chip capacitor 0.6 pF
C2, C3
C4
C5, C6, C13, C14, multilayer ceramic chip capacitor 1.5 µF
C18, C19
Murata 0603 or
capacitor of same
quality
C7, C8, C11, C16 multilayer ceramic chip capacitor 100 nF
[1]
C9
multilayer ceramic chip capacitor 15 pF
multilayer ceramic chip capacitor 220 nF
multilayer ceramic chip capacitor 10 pF
multilayer ceramic chip capacitor 0.3 pF
multilayer ceramic chip capacitor 20 pF
C10, C15
C12, C17
C20
[1]
[1]
[1]
C21
C22
tantalum capacitor
electrolytic capacitor
SMD resistor
10 µF; 35 V
C23
220 µF; 35 V
3.6 Ω
R1
R2
SMD resistor
5.1 Ω
[1] American Technical Ceramics type 100B or capacitor of same quality.
BLC6G22-75_BLC6G22LS-75_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01 — 7 February 2008
6 of 11
BLC6G22-75; BLC6G22LS-75
NXP Semiconductors
Power LDMOS transistor
9. Package outline
Plastic flanged cavity package; 2 mounting slots; 2 leads
SOT895A
D
F
A
D
1
B
U
1
q
c
C
1
L
M
M
M
B
w1
A
p
H
U
2
E
E
1
3
A
2
M M
C
b
w2
Q
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
c
D
D
1
E
E
1
F
H
L
p
Q
q
U
1
U
2
w
w
2
1
4.1
3.3
12.83 0.17
12.57 0.14
19.9 20.42 9.53 9.78
19.7 20.12 9.27 9.53
1.14 19.94 5.3
0.89 18.92 4.5
3.38 1.75
3.12 1.50
34.16 9.98
33.91 9.65
mm
27.94
1.100
0.25
0.6
0.161 0.505 0.0065 0.785 0.804 0.375 0.385 0.045 0.785 0.209 0.133 0.069
0.130 0.495 0.0055 0.775 0.792 0.365 0.375 0.035 0.745 0.177 0.123 0.059
1.345 0.392
1.335 0.380
inches
0.01 0.023
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
06-02-21
06-04-03
SOT895A
Fig 8. Package outline SOT895A
BLC6G22-75_BLC6G22LS-75_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01 — 7 February 2008
7 of 11
BLC6G22-75; BLC6G22LS-75
NXP Semiconductors
Power LDMOS transistor
Plastic earless flanged cavity package; 2 leads
SOT896B
D
F
A
3
D
1
D
c
U
1
1
L
H
U
2
E
E
1
2
M M
D
b
w2
Q
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
c
D
D
1
E
E
1
F
H
L
Q
U
1
U
2
w
2
4.1
3.3
12.83 0.17
12.57 0.14
19.9 20.42 9.53 9.78
19.7 20.12 9.27 9.53
1.14 19.94 5.3
0.89 18.92 4.5
1.75 20.70 9.98
1.50 20.45 9.65
mm
0.6
0.023
0.161 0.505 0.0065 0.785 0.804 0.375 0.385 0.045 0.785 0.209 0.069 0.815 0.392
0.130 0.495 0.0055 0.775 0.792 0.365 0.375 0.035 0.745 0.177 0.059 0.805 0.380
inches
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
06-02-21
06-04-03
SOT896B
Fig 9. Package outline SOT896B
BLC6G22-75_BLC6G22LS-75_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01 — 7 February 2008
8 of 11
BLC6G22-75; BLC6G22LS-75
NXP Semiconductors
Power LDMOS transistor
10. Abbreviations
Table 9.
Abbreviations
Description
Acronym
3GPP
CCDF
CW
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
DPCH
LDMOS
PAR
Dedicated Physical CHannel
Laterally Diffused Metal-Oxide Semiconductor
Peak-to-Average power Ratio
PDPCH
RF
transmission Power of the Dedicated Physical CHannel
Radio Frequency
VSWR
W-CDMA
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
11. Revision history
Table 10. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLC6G22-75_BLC6G22LS-75_1
20080207
Objective data sheet
-
-
BLC6G22-75_BLC6G22LS-75_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01 — 7 February 2008
9 of 11
BLC6G22-75; BLC6G22LS-75
NXP Semiconductors
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
12.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
13. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BLC6G22-75_BLC6G22LS-75_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01 — 7 February 2008
10 of 11
BLC6G22-75; BLC6G22LS-75
NXP Semiconductors
Power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1.1
1.2
1.3
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 3
One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5
7.1
7.2
7.3
7.4
8
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 7 February 2008
Document identifier: BLC6G22-75_BLC6G22LS-75_1
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Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
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