BLF0810S-90 [NXP]
Base station LDMOS transistors; 基站LDMOS晶体管
| 型号： | BLF0810S-90 |
| 厂家： | 
NXP |
| 描述： | Base station LDMOS transistors |
| 文件： | 总16页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF0810-90; BLF0810S-90
Base station LDMOS transistors
Product specification
2003 Jun 12
Supersedes data of 2003 May 09
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF0810-90; BLF0810S-90
FEATURES
APPLICATIONS
• Typical CDMA IS95 performance at standard settings
with a supply voltage of 27 V and IDQ of 560 mA.
Adjacent channel bandwidth is 30 kHz, adjacent
channel at ± 750 kHz:
• RF power amplifier for GSM, EDGE and CDMA base
stations and multicarrier operations in the
800 to 1000 MHz frequency range.
– Output power = 15 W (AV)
– Gain = 16 dB
DESCRIPTION
90 W LDMOS power transistor for base station
applications at frequencies from 800 to 1000 MHz.
– Efficiency = 27%
– ACPR = −46 dBc at 750 kHz and BW = 30 kHz
• 70 W CW performance
• Easy power control
• Excellent ruggedness
• High power gain
• Excellent thermal stability
• Designed for broadband operation (800 to 1000 MHz)
• Internally matched for ease of use.
PINNING - SOT502A
PINNING - SOT502B
PIN
DESCRIPTION
PIN
DESCRIPTION
1
2
3
drain
gate
1
2
3
drain
gate
source; connected to flange
source; connected to flange
handbook, halfpage
1
1
3
2
3
2
Top view
MBL105
Top view
MBK394
Fig.1 Simplified outline SOT502A (BLF0810-90).
Fig.2 Simplified outline SOT502B (BLF0810S-90)
QUICK REFERENCE DATA
Typical RF performance at Th = 25 °C in a common source test circuit.
f
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
d3
(dBc)
ACPR 750
(dBc)
MODE OF OPERATION
(MHz)
Class-AB (2-tone)
CDMA (IS95)
f1 = 890.0; f2 = 890.1
890
27
27
70 (PEP)
15 (AV)
16
16
39
27
−28
−
−
−46
2003 Jun 12
2
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF0810-90; BLF0810S-90
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
75
UNIT
VDS
VGS
Tstg
Tj
drain-source voltage
gate-source voltage
storage temperature
junction temperature
−
−
V
V
±15
150
200
−65
°C
°C
−
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Th = 25 °C, PL = 35 W (AV), note 1
VALUE
UNIT
Rth j-c
thermal resistance from junction to case
1
K/W
K/W
Rth j-hs
thermal resistance from heatsink to junction Th = 25 °C, PL = 35 W (AV), note 2
1.3
Notes
1. Thermal resistance is determined under RF operating conditions.
2. Depending on mounting condition in application.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
CONDITIONS
VGS = 0; ID = 3 mA
MIN.
75
TYP. MAX. UNIT
V(BR)DSS
VGSth
IDSS
−
−
V
VDS = 10 V; ID = 300 mA
VGS = 0; VDS = 36 V
4
−
5
V
−
−
1.5
−
µA
A
IDSX
VGS = VGSth + 9 V; VDS = 10 V
VGS = ±20 V; VDS = 0
VDS = 10 V; ID = 10 A
VGS = 9 V; ID = 10 A
24
−
−
IGSS
gate leakage current
−
0.5
−
µA
S
gfs
forward transconductance
drain-source on-state resistance
−
4.4
120
RDSon
−
−
mΩ
2003 Jun 12
3
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF0810-90; BLF0810S-90
APPLICATION INFORMATION
RF performance in a common source class-AB circuit.
VDS = 27 V; IDQ = 560 mA; f = 890 MHz; Th = 25 °C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS
Mode of operation: 2-tone CW, 100 kHz spacing
MIN.
TYP. MAX. UNIT
Gp
ηD
IRL
d3
gain power
PL = 45 W (PEP)
15
16.5
32
−
dB
%
drain efficiency
input return loss
29
−
−
−10
−40
−6
−
dB
dBc
third order intermodulation
distortion
−
Gp
ηD
d3
gain power
PL = 63 W (PEP)
−
16.5
38
−
dB
%
drain efficiency
33
−
−
third order intermodulation
distortion
−32
−27
dBc
ruggedness
VSWR = 10 : 1 through all
phases; PL = 125 W (PEP)
no degradation in output power
Mode of operation: CDMA, IS95 (pilot, paging, sync and traffic codes 8 to 13)
Gp
gain power
PL = 15 W (AV)
PL = 15 W (AV)
at BW = 30 kHz
−
−
−
16
−
−
−
dB
%
ηD
drain efficiency
27
ACPR 750
adjacent channel power ratio
−46
dBc
MDB171
MDB170
20
50
40
0
handbook, halfpage
handbook, halfpage
G
η
(%)
d
p
D
3
G
p
(dB)
16
(dBc)
−20
η
D
I
= 400 mA
450 mA
DQ
12
8
30
20
−40
−60
500 mA
600 mA
4
10
0
0
0
−80
20
40
60
80
100
0
20
40
60
80
100
P
L
(PEP) (W)
P
(PEP) (W)
L
VDS = 27 V; f1 = 890.0 MHz; f2 = 890.1 MHz.
VDS = 27 V; IDQ = 560 mA; f1 = 890.0 MHz; f2 = 890.1 MHz.
Fig.4 Third order intermodulation distortion as a
function of peak envelope power, typical
values.
Fig.3 Power gain and efficiency as functions of
peak envelope power, typical values.
2003 Jun 12
4
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF0810-90; BLF0810S-90
MDB172
MDB173
0
0
handbook, halfpage
handbook, halfpage
d
d
5
7
(dBc)
(dBc)
−20
−20
I
= 600 mA
500 mA
DQ
I
= 600 mA
500 mA
DQ
−40
−60
−80
−40
450 mA
400 mA
450 mA
400 mA
−60
−80
0
20
40
60
80
100
0
20
40
60
80
100
P
(PEP) (W)
P
(PEP) (W)
L
L
VDS = 27 V; f1 = 890.0 MHz; f2 = 890.1 MHz.
VDS = 27 V; f1 = 890.0 MHz; f2 = 890.1 MHz.
Fig.5 Fifth order intermodulation distortion as a
function of peak envelope power; typical
values.
Fig.6 Seventh order intermodulation distortion as
a function of peak envelope power; typical
values.
MDB174
MDB175
40
30
20
10
0
20
0
handbook, halfpage
handbook, halfpage
η
(%)
D
G
ACPR
(dB)
p
G
p
(dB)
15
−20
10
5
−40
750 kHz
η
D
−60
1.98 MHz
0
−80
20
30
40
50
(AV)(dBm)
20
30
40
50
P (AV)(dBm)
L
P
L
VDS = 27 V; IDQ = 560 mA; f = 890 MHz.
measured under CDMA conditions; test signal standard IS-95.
VDS = 27 V; IDQ = 560 mA; f = 890 MHz.
measured under CDMA conditions; test signal standard IS-95.
Fig.7 Power gain and drain efficiency as functions
of average load power; typical values.
Fig.8 ACPR as a function of average load power;
typical values.
2003 Jun 12
5
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF0810-90; BLF0810S-90
MDB176
MDB177
2
2
handbook, halfpage
handbook, halfpage
Z
Z
I
L
R
L
(Ω)
(Ω)
r
i
1
0
1
0
x
i
X
L
−1
−1
−2
0.8
−2
0.8
0.85
0.9
0.95
1
0.85
0.9
0.95
1
f (GHz)
f (GHz)
Class-AB operation; VDS = 27 V; IDQ = 560 mA; PL = 18 W.
Values comprised for different parameters.
Class-AB operation; VDS = 27 V; IDQ = 560 mA; PL = 18 W.
Values comprised for different parameters.
Fig.9 Input impedance as a function of frequency
(series components); typical values.
Fig.10 Input impedance as a function of frequency
(series components); typical values.
drain
Z
handbook, halfpage
L
gate
Z
IN
MGS998
Fig.11 Definition of transistor impedance.
2003 Jun 12
6
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF0810-90; BLF0810S-90
C15
C2
C3
Q1
L12
C4
C6
Vbias
L9
C17
R1
L2
L10
C9
C7
Vsupply
L5
L4
C10
L7
L3
Q2
L11
C1
L14
C13
L1
L15
L16
C18
L6
RF in
RF out
C5
C11
C12
C16
L8
C8
L13
C14
MDB168
Fig.12 Test circuit for 860 to 900 MHz.
2003 Jun 12
7
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF0810-90; BLF0810S-90
BLF0810-90 output Rev C
C15
C2
C3
C4
C6
C17
C9
C10
L5
C5
R1
C7
C8
C1
C13
C18
C16
C11
C12
BLF0810-90 input Rev C
C14
BLF0810-90 output Rev C
60
60
BLF0810-90 input Rev C
40
40
MDB178
Dimensions in mm.
The components are situated on one side of the copper-clad Rogers 6006 printed-circuit board (εr = 6.15); thickness = 25 mm.
The other side is unetched and serves as a ground plane.
Fig.13 Component layout for 860 to 900 MHz test circuit.
2003 Jun 12
8
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF0810-90; BLF0810S-90
List of components (see Figs 12 and 13)
COMPONENT
DESCRIPTION
VALUE
68 pF
DIMENSIONS
C1, C6, C13, C14, C15,
C16, C17
multilayer ceramic chip capacitor; note 1
C2
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
tantalum capacitor
air trimmer capacitor
multilayer ceramic chip capacitor
potentiometer
330 nF
100 nF
10 µF
8 pF
C3
C4, C9, C10, C11, C12
C5, C18
C7, C8
R1
8.2 pF
1 kΩ
Q1
7808 voltage regulator
BLF0810-90/BLF0810S-90 LDMOS transistor
stripline; note 2
Q2
L1
5.22 × 0.92 mm
6.47 × 0.92 mm
5.38 × 4.8 mm
2.4 × 0.92 mm
L2
stripline; note 2
L3
stripline; note 2
L4
stripline; note 2
L5
ferroxcube
L6
stripline; note 2
9.73 × 0.92 mm
1.82 × 9.3 mm
8.15 × 17.9 mm
44 × 0.92 mm
L7
stripline; note 2
L8
stripline; note 2
L9
stripline; note 2
L10
L11
L12, L13
L14
L15, L16
stripline; note 2
18.45 × 28.3 mm
9.95 × 5.38 mm
37.6 × 3.35 mm
2.36 × 0.92 mm
4.22 × 0.92 mm
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad Rogers 6006 printed-circuit board (εr = 6.15); thickness = 0.64 mm.
2003 Jun 12
9
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF0810-90; BLF0810S-90
PACKAGE OUTLINES
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D
1
U
1
B
q
c
C
1
L
p
E
E
1
H
U
2
w
M
M
M
B
A
1
A
2
w
5
b
M
M
C
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
UNIT
1
1
1
2
1
12.83
12.57
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
3.38
3.12
1.70
1.45
34.16 9.91
33.91 9.65
0.15
0.08
27.94
1.100
0.25
0.01
0.51
0.02
mm
0.505
0.495
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210 0.133 0.067
0.772 0.774 0.366 0.364 0.035 0.745 0.170 0.123 0.057
1.345 0.390
1.335 0.380
0.006
0.003
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-12-28
03-01-10
SOT502A
2003 Jun 12
10
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF0810-90; BLF0810S-90
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D
1
c
U
1
1
L
E
E
H
U
1
2
2
w
5
b
M
M
D
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
Q
U
U
w
2
UNIT
1
1
1
2
12.83
12.57
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94
0.89 18.92
1.70 20.70 9.91
1.45 20.45 9.65
0.15
0.08
5.33
4.32
0.25
mm
0.505
0.495
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210 0.067 0.815 0.390
0.772 0.774 0.366 0.364 0.035 0.745 0.170 0.057 0.805 0.380
0.006
0.003
0.010
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-12-28
03-01-10
SOT502B
2003 Jun 12
11
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF0810-90; BLF0810S-90
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Jun 12
12
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF0810-90; BLF0810S-90
NOTES
2003 Jun 12
13
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF0810-90; BLF0810S-90
NOTES
2003 Jun 12
14
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF0810-90; BLF0810S-90
NOTES
2003 Jun 12
15
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/03/pp16
Date of release: 2003 Jun 12
Document order number: 9397 750 11544
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