BLF1043 [NXP]
UHF power LDMOS transistor; UHF功率LDMOS晶体管
| 型号： | BLF1043 |
| 厂家： | 
NXP |
| 描述： | UHF power LDMOS transistor |
| 文件： | 总8页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BLF1043
UHF power LDMOS transistor
Objective specification
2000 Feb 23
Supersedes data of 2000 Feb 17
Philips Semiconductors
Objective specification
UHF power LDMOS transistor
BLF1043
FEATURES
PINNING - SOT538A
PIN
• High power gain
DESCRIPTION
• Easy power control
• Excellent ruggedness
1
2
3
drain
gate
• Source on mounting base eliminates DC isolators,
reducing common mode inductance
source
• Designed for broadband operation (HF to 1 GHz).
1
handbook, halfpage
APPLICATIONS
• Communication transmitter applications in the UHF
frequency range.
3
DESCRIPTION
2
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flangeless package
(SOT538A) with a ceramic cap. The common source is
connected to the mounting base.
Top view
MBK905
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
f
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
MODE OF OPERATION
(MHz)
CW, class-AB (2-tone)
CW, class-AB (1-tone)
f1 = 960; f2 = 960.1
960
26
26
10 (PEP)
10
>16
>16
>35
>45
≤−30
−
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Feb 23
2
Philips Semiconductors
Objective specification
UHF power LDMOS transistor
BLF1043
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
75
UNIT
−
−
−
−
V
VGS
ID
gate-source voltage
drain current (DC)
±15
2.2
V
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
T
mb ≤ 25 °C
tbf
W
−65
+150
200
°C
°C
−
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb
Rth mb-h
thermal resistance from junction to mounting base Tmb = 25 °C; note 1
4.6
0.4
K/W
K/W
thermal resistance from mounting base to heatsink
Note
1. Thermal resistance is determined under RF operating conditions.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
CONDITIONS
VGS = 0; ID = 0.2 mA
MIN.
75
TYP. MAX. UNIT
V(BR)DSS
VGSth
IDSS
IDSX
IGSS
gfs
−
−
V
VDS = 10 V; ID = 20 mA
VGS = 0; VDS = 26 V
4
−
3
−
−
−
−
−
−
−
5
V
−
0.15
−
µA
A
VGS = VGSth + 9 V; VDS = 10 V
VGS = ±15 V; VDS = 0
−
gate leakage current
−
1
µA
S
forward transconductance
drain-source on-state resistance
input capacitance
VDS = 10 V; ID = 0.75 A
VGS = 10 V; ID = 0.75 A
VGS = 0; VDS = 26 V; f = 1 MHz
VGS = 0; VDS = 26 V; f = 1 MHz
VGS = 0; VDS = 26 V; f = 1 MHz
0.5
1.2
11
9
−
RDSon
Cis
−
Ω
−
pF
pF
pF
Cos
output capacitance
−
Crs
feedback capacitance
0.6
−
2000 Feb 23
3
Philips Semiconductors
Objective specification
UHF power LDMOS transistor
BLF1043
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th = 25 °C; Rth mb-h = 0.4 K/W unless otherwise specified.
f
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
MODE OF OPERATION
(MHz)
CW, class-AB (2-tone)
CW, class-AB (1-tone)
f1 = 960; f2 = 960.1
960
26
26
25
25
10 (PEP)
10
>16
>16
>35
>45
≤−30
−
Ruggedness in class-AB operation
The BLF1043 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: VDS = 26 V; f = 960 MHz at rated load power.
MGS995
30
p
60
η
handbook, halfpage
G
D
(%)
50
(dB)
25
η
D
p
20
15
10
5
40
30
20
10
0
G
0
800
840
880
920
960
1000
f (MHz)
Class-AB operation; VDS = 26 V; IDQ = 80mA;
PL = 10 W (PEP).
Fig.2 Power gain and efficiency as functions of
frequency, typical values.
2000 Feb 23
4
Philips Semiconductors
Objective specification
UHF power LDMOS transistor
BLF1043
MGS996
MGS997
4
15
handbook, halfpage
handbook, halfpage
r
i
Z
i
(Ω)
Z
L
(Ω)
0
10
R
X
L
−4
L
x
i
5
−8
−12
800
0
800
840
880
920
960
1000
840
880
920
960
1000
f (MHz)
f (MHz)
VDS = 26 V; IDQ = 80 mA; PL = 10 W (PEP); Th ≤ 25 °C.
VDS = 26 V; IDQ = 80 mA; PL = 10 W (PEP); Th ≤ 25 °C.
Impedance measured at reference planes (see Fig.5).
Impedance measured at reference planes (see Fig.5).
Fig.3 Input impedance as a function of frequency
(series components); typical values.
Fig.4 Load impedance as a function of frequency
(series components); typical values.
handbook, halfpage
drain
Z
handbook, halfpage
L
gate
Z
IN
MGS998
reference planes
MGT002
Fig.5 Measuring reference planes SOT538A.
2000 Feb 23
Fig.6 Definition of transistor impedance.
5
Philips Semiconductors
Objective specification
UHF power LDMOS transistor
BLF1043
PACKAGE OUTLINE
Ceramic surface mounted package; 2 leads
SOT538A
Package under
development
D
Philips Semiconductors reserves the
right to make changes without notice.
A
3
D
1
D
2
B
L
c
1
E
E
1
H
E
2
2
w
0
b
M
M
B
α
1
Q
2.5
5 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
A
b
c
D
D
D
E
E
E
H
L
Q
w
1
α
1
2
1
2
1.35
1.19
0.23
0.18
2.95
2.29
5.16
5.00
4.65
4.50
5.41
5.00
4.14
3.99
3.63
3.48
4.14
3.99
7.49
7.24
2.03
1.27
0.10
0.00
7°
0°
0.25
0.053 0.009
0.047 0.007
0.116
0.090
0.203 0.183 0.213 0.163 0.143 0.163 0.295 0.080 0.004
0.197 0.177 0.197 0.157 0.137 0.157 0.285 0.050 0.000
7°
0°
inches
0.010
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
99-03-30
SOT538A
2000 Feb 23
6
Philips Semiconductors
Objective specification
UHF power LDMOS transistor
BLF1043
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
2000 Feb 23
7
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SCA
© Philips Electronics N.V. 2000
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Printed in The Netherlands
603516/02/pp8
Date of release: 2000 Feb 23
Document order number: 9397 750 06908
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