BLF1049 [NXP]
Base station LDMOS transistor; 基站LDMOS晶体管
| 型号： | BLF1049 |
| 厂家： | 
NXP |
| 描述： | Base station LDMOS transistor |
| 文件： | 总12页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
BLF1049
Base station LDMOS transistor
Product specification
2003 May 14
Supersedes data of 2001 Dec 05
Philips Semiconductors
Product specification
Base station LDMOS transistor
BLF1049
FEATURES
DESCRIPTION
• Typical performance at a supply voltage of 27 V:
– 1-tone CW; IDQ = 1000 mA
– Output power = 125 W
125 W LDMOS power transistor for base station
applications at frequencies from 800 MHz to 1000 MHz.
PINNING - SOT502A
– Gain = 16.5 dB
– Efficiency = 54%
PIN
DESCRIPTION
– EDGE output power = 45 W (AV)
1
2
3
drain
gate
– ACPR400 = −64 dBc at 400 kHz
(EDGE; IDQ = 750 mA)
source; connected to flange
– EVM = 2% rms (AV)
(EDGE; IDQ = 750 mA)
• Easy power control
handbook, halfpage
1
• Excellent ruggedness
• High power gain
• Excellent thermal stability
3
2
• Designed for broadband operation (800 to 1000 MHz)
• Internally matched for ease of use.
Top view
MBK394
APPLICATIONS
Fig.1 Simplified outline SOT502A .
• RF power amplifier for GSM, EDGE and CDMA base
stations and multicarrier applications in the
800 to 1000 MHz frequency range.
QUICK REFERENCE DATA
Typical RF performance at Th = 25 °C in a common source test circuit.
EVM
% rms
(AV)
f
PL
(W)
Gp
(dB)
ηD
(%)
d3
(dBc)
ACPR 400
(dBc)
MODE OF OPERATION
(MHz)
2-tone
125 (PEP)
125
15.5
16.5
15
37
54
32
−32
−
−
−
−
−
2
1-tone CW
GSM EDGE
920
45 (AV)
−
−64
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER
VDS
MIN.
MAX.
UNIT
drain-source voltage
gate-source voltage
storage temperature
junction temperature
−
−
75
V
V
VGS
Tstg
Tj
±15
150
200
−65
°C
°C
−
2003 May 14
2
Philips Semiconductors
Product specification
Base station LDMOS transistor
BLF1049
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
K/W
K/W
Rth j-c
Rth j-h
thermal resistance from junction to case
Th = 25 °C, PL = 35 W (AV), note 1
0.42
0.62
thermal resistance from junction to heatsink Th = 25 °C, PL = 35 W (AV), note 2
Notes
1. Thermal resistance is determined under RF operating conditions.
2. Depending on mounting condition in application.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VGS = 0; ID = 3 mA
MIN.
75
TYP. MAX. UNIT
V(BR)DSS
VGSth
IDSS
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
−
−
5
3
−
1
−
−
V
VDS = 10 V; ID = 300 mA
VGS = 0; VDS = 36 V
4
−
V
−
−
µA
A
IDSX
VGS = VGSth + 9 V; VDS = 10 V
VGS = ±20 V; VDS = 0
VDS = 10 V; ID = 10 A
VGS = 9 V; ID = 10 A
45
−
−
IGSS
gate leakage current
−
µA
S
gfs
forward transconductance
drain-source on-state resistance
−
9
RDSon
−
60
mΩ
APPLICATION INFORMATION
RF performance in a common source class-AB circuit; VDS = 27 V; Th = 25 °C; unless otherwise specified.
Mode of operation: 2-tone CW, 100 kHz spacing; IDQ = 1130 mA; f = 890 MHz
SYMBOL
Gp
PARAMETER
gain power
CONDITIONS
PL = 125 W (PEP)
MIN.
14.6
33
TYP. MAX. UNIT
15.5
37
−
dB
%
ηD
IRL
d3
drain efficiency
input return loss
−
−
−12
−32
−6
−25
dB
dBc
third order inter modulation
distortion
−
Mode of operation: GSM EDGE; IDQ = 750 mA; f = 920 MHz
SYMBOL PARAMETER CONDITIONS
Gp gain power PL = 45 W (AV)
MIN.
TYP. MAX. UNIT
−
−
−
−
−
15
32
−64
2
−
−
−
−
−
dB
%
ηD
drain efficiency
ACPR 400
EVM (AV)
EVM peak
adjacent channel power ratio
EVM rms average signal distortion
EVM rms peak signal distortion
dBc
%
2.2
%
Mode of operation: 1-tone CW; IDQ = 1000 mA; f = 920 MHz
SYMBOL
Gp
PARAMETER
gain power
drain efficiency
CONDITIONS
MIN.
TYP. MAX. UNIT
PL = PL 1 dB = 125 W
−
−
16.5
54
−
−
dB
%
ηD
2003 May 14
3
Philips Semiconductors
Product specification
Base station LDMOS transistor
BLF1049
MLE061
MLE062
16
−62
40
2
handbook, halfpage
handbook, halfpage
ACPR
400
EVM
rms
(AV)
(%)
G
p
(dB)
η
D
(%)
G
p
(dBc)
15
−64
30
1.5
η
D
EVM
14
13
12
−66
−68
20
10
0
1
ACPR400
0.5
0
−70
0
10
20
30
40
P
50
0
10
20
30
40
P
50
(AV)(W)
(AV)(W)
L
L
VDS = 27 V; f = 920 MHz; IDQ = 750 mA; Th ≤ 25 °C.
VDS = 27 V; f = 920 MHz; IDQ = 750 mA; Th ≤ 25 °C.
Fig.3 GSM EDGE ACPR400 and EVM as
functions of average load power; typical
values.
Fig.2 GSM EDGE power gain and efficiency as
functions of load power; typical values.
MLE064
50
17
handbook, halfpage
gain
(dB)
η
(4)
MLE063
(%)
18
60
handbook, halfpage
16.5
40
30
20
10
η
D
η
G
p
(dB)
η(1,2,3)
D
(%)
16
(5)
17
40
15.5
15
G
p
(6)
16
20
14.5
14
0
0
50
100
150
(PEP) (W)
P
L
15
0
0
150
50
100
P
(AV) (W)
VDS = 27 V; IDQ = 1.1 A; f1 = 920.0 MHz; f2 = 920.1 MHz.
L
(1) η at Th = −40 °C.
(2) η at Th = 20 °C.
(3) η at Th = 80 °C.
(4) gain at Th = −40 °C.
(5) gain at Th = 20 °C.
(6) gain at Th = 80 °C.
VDS = 27 V; f = 920 MHz; IDQ = 1000 mA;
Fig.5 2-tone power gain and efficiency as
functions of load power at different
temperatures.
Fig.4 1-tone CW power gain and efficiency as
functions of load power; typical values.
2003 May 14
4
Philips Semiconductors
Product specification
Base station LDMOS transistor
BLF1049
MLE065
MLE066
−20
−30
handbook, halfpage
handbook, halfpage
d
d
3
5
(dBc)
(dBc)
(3)
−30
−40
(1) (2)
−40
−50
−60
(1)
(2)
−50
(3)
−60
−70
0
50
100
150
(PEP) (W)
0
50
100
150
P
P (PEP) (W)
L
L
VDS = 27 V; IDQ = 1.1 A; f1 = 920.0 MHz; f2 = 920.1 MHz.
VDS = 27 V; IDQ = 1.1 A; f1 = 920.0 MHz; f2 = 920.1 MHz.
(1) Th = −40 °C.
(2) Th = 20 °C.
(3) Th = 80 °C.
(1) Th = −40 °C.
(2) Th = 20 °C.
(3) Th = 80 °C.
Fig.6 Third order intermodulation distortion as a
function of load power at different
temperatures.
Fig.7 Fifth order intermodulation distortion as a
function of load power at different
temperatures.
MLE067
MLE068
−40
20
40
handbook, halfpage
handbook, halfpage
η
(%)
gain
(dB)
D
d
(3)
(2)
7
(2)
(1)
(dBc)
15
10
5
30
−50
(1)
(3)
(4)
20
10
0
−60
−70
0
0
0
50
100
150
(PEP) (W)
50
100
150
P
(PEP) (W)
P
L
L
VDS = 27 V; f1 = 920.0 MHz; f2 = 920.1 MHz.
VDS = 27 V; IDQ = 1.1 A; f1 = 920.0 MHz;
(3) IDQ = 1 A.
(1)
IDQ = 1 A.
(1) Th = −40 °C.
(2) Th = 20 °C.
(3) Th = 80 °C.
(4) IDQ = 1.45 A.
(2) IDQ = 1.45 A.
Fig.8 Seventh order intermodulation distortion as
a function of load power at different
temperatures.
Fig.9 Power gain and drain efficiency as functions
of peak envelope load power;
typical values.
2003 May 14
5
Philips Semiconductors
Product specification
Base station LDMOS transistor
BLF1049
MLE070
MLE069
0
2
handbook, halfpage
handbook, halfpage
Z
i
d
im
(Ω)
(dBc)
1.5
r
i
−20
1
0.5
0
(2)
(1)
(5)
−40
(4)
(6)
(3)
x
i
−60
−0.5
−1
0.85
−80
0
50
100
150
(PEP) (W)
0.9
0.95
1
f (GHz)
P
L
VDS = 27 V; f1 = 920.0 MHz; f2 = 920.1 MHz.
(1) d3; IDQ = 1 A.
(2) d5; IDQ = 1 A.
(3) d7; IDQ = 1 A.
(5) d5; IDQ = 1.3 A.
(6) d7; IDQ = 1.3 A.
Class-AB operation; VDS = 27 V; IDQ = 1125 mA; PL = 35 W.
Values comprised for different parameters.
(4) d3; IDQ = 1.3 A.
Fig.10 Intermodulation distortion as a function of
peak envelope load power; typical values.
Fig.11 Input impedance as a function of frequency
(series components); typical values.
MLE071
2
handbook, halfpage
Z
L
(Ω)
1.5
1
R
L
0.5
0
drain
Z
handbook, halfpage
L
X
L
gate
−0.5
Z
IN
MGS998
−1
0.85
0.9
0.95
1
f (GHz)
Class-AB operation; VDS = 27 V; IDQ = 1125 mA; PL = 35 W.
Values comprised for different parameters.
Fig.12 Input impedance as a function of frequency
(series components); typical values.
Fig.13 Definition of transistor impedance.
2003 May 14
6
Philips Semiconductors
Product specification
Base station LDMOS transistor
BLF1049
C15
C2
C3
Q1
L12
C4
C6
Vbias
L9
C17
C9
R1
L2
L10
C7
Vsupply
L5
L4
C10
L7
L3
Q2
L11
C1
L14
C13
L1
L15
L16
C18
L6
RF in
RF out
C5
C11
C12
C16
L8
C8
L13
C14
MDB168
Fig.14 Test circuit for 860 to 900 MHz.
2003 May 14
7
Philips Semiconductors
Product specification
Base station LDMOS transistor
BLF1049
PHILIPS
Input Rev C
PHILIPS
Output Rev C
Vbias in
C15
C17
L12
C2
Q1
C4
C6
L9
C9
Vd
in
C3
C10
L5
C5
R1
L3
C7
C18
LL1144
L1 C1 L2
L6
L7 L8
L10
L11
L4
C13
L15
L16
C8
C11
C12
C16
C14
L13
PHILIPS
Input Rev C
PHILIPS
Output Rev C
60
60
40
40
MLE073
Dimensions in mm.
The components are situated on one side of the copper-clad Rogers 6006 printed-circuit board (εr = 6.15); thickness = 25 mm.
The other side is unetched and serves as a ground plane.
Fig.15 Component layout for 860 to 900 MHz test circuit.
2003 May 14
8
Philips Semiconductors
Product specification
Base station LDMOS transistor
BLF1049
List of components (see Figs 14 and 15)
COMPONENT
DESCRIPTION
VALUE
68 pF
DIMENSIONS
C1, C6, C13, C14, C15,
C16, C17
multilayer ceramic chip capacitor; note 1
C2
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
tantalum capacitor
air trimmer capacitor
multilayer ceramic chip capacitor
potentiometer
330 nF
100 nF
10 µF
5 pF
C3
C4, C9, C10, C11, C12
C5, C18
C7, C8
R1
8.2 pF
1 kΩ
Q1
7808 voltage regulator
BLF1049 LDMOS transistor
stripline; note 2
Q2
L1
5.22 × 0.92 mm
6.47 × 0.92 mm
5.38 × 4.8 mm
2.4 × 0.92 mm
L2
stripline; note 2
L3
stripline; note 2
L4
stripline; note 2
L5
ferroxcube
L6
stripline; note 2
9.73 × 0.92 mm
1.82 × 9.3 mm
8.15 × 17.9 mm
44 × 0.92 mm
L7
stripline; note 2
L8
stripline; note 2
L9
stripline; note 2
L10
L11
L12, L13
L14
L15, L16
stripline; note 2
18.45 × 28.3 mm
9.95 × 5.38 mm
37.6 × 3.35 mm
2.36 × 0.92 mm
4.22 × 0.92 mm
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad Rogers 6006 printed-circuit board (εr = 6.15); thickness = 0.64 mm.
2003 May 14
9
Philips Semiconductors
Product specification
Base station LDMOS transistor
BLF1049
PACKAGE OUTLINE
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D
1
U
1
B
q
c
C
1
L
p
E
E
H
U
1
2
w
M
M
M
B
A
1
A
2
w
5
b
M
M
C
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
UNIT
1
1
1
2
1
12.83
12.57
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
3.38
3.12
1.70
1.45
34.16 9.91
33.91 9.65
0.15
0.08
27.94
1.100
0.25
0.01
0.51
0.02
mm
0.505
0.495
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210 0.133 0.067
0.772 0.774 0.366 0.364 0.035 0.745 0.170 0.123 0.057
1.345 0.390
1.335 0.380
0.006
0.003
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-12-28
03-01-10
SOT502A
2003 May 14
10
Philips Semiconductors
Product specification
Base station LDMOS transistor
BLF1049
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 May 14
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/03/pp12
Date of release: 2003 May 14
Document order number: 9397 750 11123
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