BLF2022-125 [NXP]
UHF power LDMOS transistor; UHF功率LDMOS晶体管
| 型号： | BLF2022-125 |
| 厂家： | 
NXP |
| 描述： | UHF power LDMOS transistor |
| 文件： | 总8页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF2022-125
UHF power LDMOS transistor
Objective specification
2003 Mar 07
Supersedes data of 2002 April 02
Philips Semiconductors
Objective specification
UHF power LDMOS transistor
BLF2022-125
FEATURES
PINNING - SOT634A
PIN
• Typical W-CDMA performance at a supply voltage of
28 V and IDQ of 1 A
DESCRIPTION
1
2
3
drain
gate
– Output power = 20 W (AV)
– Gain = 12 dB
source, connected to flange
– Efficiency = 19%
– ACPR = −42 dBc at 3.84 MHz
• Easy power control
1
• Excellent ruggedness
• High power gain
• Excellent thermal stability
• Designed for broadband operation (2000 to 2200 MHz)
• Internally matched for ease of use.
3
2
Top view
MBL367
APPLICATIONS
Fig.1 Simplified outline.
• RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range
DESCRIPTION
125 W LDMOS power transistor for base station
applications at frequencies from 2000 to 2200 MHz.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit; single-carrier W-CDMA test model 1, 64 channels,
3.84 MHz channel bandwidth; Peak/Average = 9.8 dB at 0.01% probability on CCDF.
f
VDS
(V)
PL avg
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
MODE OF OPERATION
(MHz)
single carrier W-CDMA
2110 to 2170
28
30
typ 12
typ 19
typ −42
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER
VDS drain-source voltage
MIN.
MAX.
UNIT
−
65
V
VGS
ID
gate-source voltage
drain current (DC)
storage temperature
junction temperature
−
±15
tbd
V
−
A
Tstg
Tj
−65
−
+150
200
°C
°C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Mar 07
2
Philips Semiconductors
Objective specification
UHF power LDMOS transistor
BLF2022-125
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-c
thermal resistance from junction to case
note 1
0.55
K/W
Note
1. Thermal resistance is determined under specified RF operating conditions.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
TYP. MAX. UNIT
V(BR)DSS
VGSth
IDSS
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
VGS = 0; ID = 2.5 mA
−
−
V
VDS = 10 V; ID = 240 mA
VGS = 0; VDS = 26 V
4.5
−
−
5.5
10
40
−
V
−
µA
nA
S
IGSS
VGS = ±15 V; VDS = 0
−
−
gfs
forward transconductance
drain-source on-state resistance
feedback capacitance
VDS = 10 V; ID = 16 A
−
9.5
0.07
tbd
RDSon
Crss
VGS = VGSth + 9 V; ID = 8 A
VGS = 0; VDS = 26 V; f = 1 MHz
−
−
Ω
−
−
pF
2003 Mar 07
3
Philips Semiconductors
Objective specification
UHF power LDMOS transistor
BLF2022-125
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common source test circuit; single-carrier W-CDMA test model 1, 64 channels, with
68% clipping, 3.84 MHz channel bandwidth; Peak/Average = 8.5 dB at 0.01% probability on CCDF.
SYMBOL
PARAMETER
CONDITIONS
MIN.
11
TYP. MAX. UNIT
Gp
common-source power gain
VD = 28 V; Pout = 20 W (AV), single
carrier W-CDMA; IDQ = 1000 mA;
f = 2.11 to 2.17 GHz
12
−
dB
ηD
drain efficiency
VD = 28 V; Pout = 20 W (AV), single
carrier W-CDMA; IDQ = 1000 mA;
f = 2.11 to 2.17 GHz
17
−
19
−
%
ACPR
IRL
adjacent channel power ratio
input return loss
VD = 28 V; Pout = 20 W (AV), single
carrier W-CDMA; IDQ = 1000 mA;
f = 2.11 to 2.17 GHz
−49
−10
−39
−6
dBc
dB
VD = 28 V; Pout = 20 W (AV), single
carrier W-CDMA; IDQ = 1000 mA;
f = 2.11 to 2.17 GHz
−
ψ
output mismatch
VD = 28 V; Pout = 20 W (AV) single
no degradation in RF
carrier W-CDMA;VSWR = 5:1 through performance before and after
all phases test
RF performance at Th = 25 °C in a common source test circuit; two-carrier W-CDMA signals, 3GPP test mode 1 64
channels, with 68% clipping, 3.84 MHz channel bandwidth; Peak/Average = 8.5 dB at 0.01% probability on CCDF per
channel frequency range is 2.11 GHz to 2.17 GHz; carrier spacing is 10 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Gp
common-source power gain
VD = 28 V; Pout = 20 W (AV);
−
12
−
−
−
dB
IDQ = 1000 mA
ηD
drain efficiency
VD = 28 V; Pout = 20 W (AV);
IDQ = 1000 mA
−
−
19
%
ACPR
adjacent channel power ratio
VD = 28 V; Pout = 20 W (AV);
−40
dBc
IDQ = 1000 mA; ACPR is measured at
f1 = −5 MHz and f2 = +5 MHz
d3
third order intermodulation
distortion
VD = 28 V; Pout = 20 W (AV);
IDQ = 1000 mA; ACPR is measured at
f1 = −10 MHz and f2 = +10 MHz
−
−
−36
−10
−
−
dB
dB
IRL
input return loss
VD = 28 V; Pout = 20 W (AV);
IDQ = 1000 mA
2003 Mar 07
4
Philips Semiconductors
Objective specification
UHF power LDMOS transistor
BLF2022-125
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 2 leads
SOT634A
Package under
development
Philips Semiconductors reserves the
right to make changes without notice.
D
A
F
3
D
1
U
1
B
q
C
c
1
L
U
p
E
E
2
1
w
M
M
M
B
A
1
A
L
2
Q
w
b
M
M
C
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D
E
E
F
L
p
Q
q
U
U
w
w
1
1
1
2
1
2
12.82 0.15
12.57 0.08
4.83
3.68
22.58 22.56 13.34 13.34
22.12 22.15 13.08 13.08
1.14
0.89
5.33
4.32
3.38
3.12
1.70
1.45
34.16 13.84
33.91 13.59
mm
27.94
1.100
0.25
0.51
0.505 0.006
0.495 0.003
0.190
0.145
0.889 0.888 0.525 0.525 0.045 0.210 0.133 0.067
0.871 0.872 0.515 0.515 0.035 0.170 0.123 0.057
1.345 0.545
1.335 0.535
inches
0.010 0.020
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT634A
01-11-27
2003 Mar 07
5
Philips Semiconductors
Objective specification
UHF power LDMOS transistor
BLF2022-125
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Mar 07
6
Philips Semiconductors
Objective specification
UHF power LDMOS transistor
BLF2022-125
NOTES
2003 Mar 07
7
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/03/pp8
Date of release: 2003 Mar 07
Document order number: 9397 750 10919
相关型号：
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NXP
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