BLF2022-90 [NXP]
UHF power LDMOS transistor; UHF功率LDMOS晶体管
| 型号： | BLF2022-90 |
| 厂家： | 
NXP |
| 描述： | UHF power LDMOS transistor |
| 文件： | 总12页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BLF2022-90
UHF power LDMOS transistor
Product specification
2003 Feb 24
Supersedes data of 2002 Sep 09
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-90
FEATURES
PINNING - SOT502A
PIN
• Typical W-CDMA performance at a supply voltage of
28 V and IDQ of 750 mA:
DESCRIPTION
1
2
3
drain
gate
– Output power = 11.5 W (AV)
– Gain = 12.5 dB
source, connected to flange
– Efficiency = 20%
– ACPR = −42 dBc at 3.84 MHz
– dim = −36 dBc
• Easy power control
• Excellent ruggedness
handbook, halfpage
1
• High power gain
• Excellent thermal stability
• Designed for broadband operation (2000 to 2200 MHz)
• Internally matched for ease of use.
3
2
Top view
MBK394
APPLICATIONS
• RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range.
Fig.1 Simplified outline.
DESCRIPTION
90 W LDMOS power transistor for base station
applications at frequencies from 2000 to 2200 MHz.
QUICK REFERENCE DATA
Typical RF performance at Th = 25 °C in a common source class-AB test circuit.
f
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
ACLR5
(dBc)
MODE OF OPERATION
(MHz)
2-tone, class-AB
f1 = 2170; f2 = 2170.1
28
750
90 (PEP)
12.8
35.7
−28.5
−
W-CDMA, 3GPP test
model 1, 64 channels
with 66% clipping
2140
28
750
15 (AV)
13.2
20
−
−40
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Feb 24
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-90
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VDS
PARAMETER
MIN.
MAX.
65
UNIT
drain-source voltage
gate-source voltage
DC drain current
−
−
−
V
V
A
VGS
ID
±15
12
Tstg
Tj
storage temperature
junction temperature
−65
+150
200
°C
°C
−
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
CONDITIONS
Th = 25 °C; note 1
Th = 25 °C; note 2
VALUE
UNIT
thermal resistance from junction to case
thermal resistance from case to heatsink
0.65
0.2
K/W
K/W
Rth c-h
Notes
1. Thermal resistance is determined under specified RF operating conditions.
2. Depending on mounting conditions.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
CONDITIONS
VGS = 0; ID = 2.1 mA
MIN.
TYP. MAX. UNIT
V(BR)DSS
VGSth
IDSS
65
4.4
−
−
−
V
VDS = 10 V; ID = 210 mA
VGS = 0; VDS = 26 V
−
5.5
15
−
V
−
µA
A
IDSX
VGS = VGSth + 9 V; VDS = 10 V
VGS = ±15 V; VDS = 0
27
−
−
IGSS
gate leakage current
−
38
−
nA
S
gfs
forward transconductance
drain-source on-state resistance
feedback capacitance
VDS = 10 V; ID = 7.5 A
−
6.2
0.1
5.1
RDSon
Crs
VGS = VGSth + 9 V; ID = 7.5 A
VGS = 0; VDS = 26 V; f = 1 MHz
−
−
Ω
−
−
pF
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th = 25 °C; Rth j-c = 0.65 K/W; unless otherwise specified.
f
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
MODE OF OPERATION
(MHz)
2-tone, class-AB
f1 = 2170; f2 = 2170.1
28
750
90 (PEP)
>11
>30
≤−25
Ruggedness in class-AB operation
The BLF2022-90 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: VDS = 28 V; IDQ = 750 mA; PL = 90 W (CW); f = 2170 MHz.
2003 Feb 24
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-90
MLD837
MLD838
15
50
0
handbook, halfpage
handbook, halfpage
η
G
D
p
d
im
(dBc)
(%)
40
(dB)
η
D
14
13
12
11
10
−20
d
3
30
G
p
d
5
−40
−60
d
7
20
10
0
−80
0
40
80
120
(PEP) (W)
0
40
80
120
(PEP) (W)
P
P
L
L
VDS = 28 V; IDQ = 750 mA; Th = 25 °C;
f1 = 2170 MHz; f2 = 2170.1 MHz.
VDS = 28 V; IDQ = 750 mA; Th = 25 °C;
f1 = 2170 MHz; f2 = 2170.1 MHz.
Fig.2 Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
Fig.3 Intermodulation distortion as a function of
peak envelope load power; typical values.
MLD839
MLD840
15
50
0
handbook, halfpage
handbook, halfpage
η
G
D
p
d
im
(dBc)
(%)
40
(dB)
14
η
D
−20
G
p
(1)
(3)
(2)
13
12
11
30
(4)
(1)
−40
(5) (6)
(2)
20
10
0
(3)
−60
10
0
−80
40
80
120
(PEP) (W)
0
40
80
120
(PEP) (W)
P
P
L
L
VDS = 28 V; Th = 25 °C;
f1 = 2170 MHz; f2 = 2170.1 MHz.
VDS = 28 V; Th = 25 °C;
f1 = 2170 MHz; f2 = 2170.1 MHz.
(3) IDQ = 600 mA.
(4) IDQ = 600 mA.
(5) IDQ = 750 mA.
(6) IDQ = 900 mA.
(1)
IDQ = 900 mA.
(2) IDQ = 750 mA.
(1) IDQ = 600 mA. (2) IDQ = 900 mA.
(3) IDQ = 750 mA.
Fig.4 Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
Fig.5 Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
2003 Feb 24
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-90
MLD833
MLD834
15
0
30
handbook, halfpage
handbook, halfpage
G
p
ACLR
(dBc)
η
G
p
(dB)
D
(%)
−20
−40
−60
10
20
ACLR
ACLR
5
5
10
10
η
D
0
0
45
(dBm)
−80
25
30
35
40
P
25
30
35
40
P
45
(dBm)
L(AV)
L(AV)
Single carrier W-CDMA performance.
VDS = 28 V; IDQ = 750 mA; Th = 25 °C; f = 2140 MHz.
Single carrier W-CDMA performance.
VDS = 28 V; IDQ = 750 mA; Th = 25 °C; f = 2140 MHz.
Input signal: 3GPP W-CDMA 1-64DPCH with 66% clipping;
peak to average power ratio: 8.5 dB at 0.01% probability on
CCDF; channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Input signal: 3GPP W-CDMA 1-64DPCH with 66% clipping;
peak to average power ratio: 8.5 dB at 0.01% probability on
CCDF; channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Measured in a W-CDMA application circuit.
Measured in a W-CDMA application circuit.
Fig.7 Adjacent channel leakage ratio (ACLR5 and
ACLR10) as function of average load power;
typical values.
Fig.6 Power gain and drain efficiency as functions
of average load power; typical values.
2003 Feb 24
5
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-90
MLD835
MLD836
4
4
handbook, halfpage
handbook, halfpage
Z
i
Z
L
(Ω)
(Ω)
3
2
R
L
x
i
2
1
0
−2
r
i
X
L
0
1.8
−4
1.8
1.9
2
2.1
2.2
2.3
1.9
2
2.1
2.2
2.3
f (GHz)
f (GHz)
VDS = 28 V; ID = 750 mA; PL = 90 W; Th = 25 °C.
VDS = 28 V; ID = 750 mA; PL = 90 W; Th = 25 °C.
Fig.8 Input impedance as a function of frequency
(series components); typical values.
Fig.9 Load impedance as a function of frequency
(series components); typical values.
F1
R2
R1
V
V
DD
gate
C10
C11
C12
C13
C14
C5
L13
L4
C9
C4
L11
L10
L6
L15
L2
L17
L8
C8
C3
output
50 Ω
input
50 Ω
L16
C6
L18
C7
L19
L20
L1
L3 L5
C2
L7
L12
L14
L9
C1
MGS920
Fig.10 Class-AB test circuit at f = 2.2 GHz.
6
2003 Feb 24
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-90
List of components (See Figs 10 and 11)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C2, C6, C7 Tekelec variable capacitor; type 37281
0.4 to 2.5 pF
C3, C8
C4, C9
C5, C12
C10
C11
C13
C14
F1
multilayer ceramic chip capacitor; note 1 12 pF
multilayer ceramic chip capacitor; note 2 12 pF
electrolytic capacitor
10 µF; 100 V
2222 037 59109
2222 581 16641
multilayer ceramic chip capacitor; note 1 1 nF
multilayer ceramic chip capacitor
tantalum SMD capacitor
electrolytic capacitor
Ferroxcube chip-bead 8DS3/3/8/9-4S2
stripline; note 3
100 nF
4.5 µF; 50 V
100 µF; 63 V
2222 037 58101
4330 030 36301
L1
50 Ω
2.9 × 2.4 mm
4 × 11.7 mm
3.7 × 2.4 mm
2 × 30.8 mm
3.6 × 2.4 mm
3 × 18.8 mm
7.8 × 2.4 mm
4 × 18.3 mm
5 × 6.3 mm
L2
stripline; note 3
14.5 Ω
50 Ω
L3
stripline; note 3
L4
stripline; note 3
6 Ω
L5
stripline; note 3
50 Ω
L6
stripline; note 3
9.5 Ω
50 Ω
L7
stripline; note 3
L8
stripline; note 3
9.8 Ω
24.4 Ω
5.1 Ω
25.4 Ω
5.7 Ω
25.4 Ω
11.3 Ω
50 Ω
L9
stripline; note 3
L10, L11
L12
L13
L14
L15
L16
L17
L18
L19
L20
R1, R2
stripline; note 3
7 × 37 mm
stripline; note 3
10.1 × 6 mm
2.4 × 32.8 mm
7.4 × 6 mm
stripline; note 3
stripline; note 3
stripline; note 3
2.5 × 15.6 mm
10.8 × 2.4 mm
3 × 10.4 mm
2.3 × 2.4 mm
3 × 2.4 mm
stripline; note 3
stripline; note 3
16.1 Ω
50 Ω
stripline; note 3
stripline; note 3
50 Ω
stripline; note 3
50 Ω
5.5 × 2.4 mm
metal film resistor
10 Ω, 0.6 W
2322 156 11009
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (εr = 2.2); thickness 0.79 mm.
2003 Feb 24
7
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-90
50
50
95
INPUT
OUTPUT
PH990109
PH990110
V
V
DD
GS
R2
C14
C11
C12
C13
C5
F1
R1
C10
C9
C4
C8
C3
C7
C2
C1
C6
INPUT
OUTPUT
PH990109
PH990110
MGU538
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr = 2.2), thickness 0.79 mm.
The other side is unetched and serves as a ground plane.
Fig.11 Component layout for 2.2 GHz class-AB test circuit.
2003 Feb 24
8
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-90
PACKAGE OUTLINE
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D
1
U
1
B
q
c
C
1
L
p
E
E
H
U
1
2
w
M
M
M
B
A
1
A
2
w
5
b
M
M
C
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
UNIT
1
1
1
2
1
12.83
12.57
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
3.38
3.12
1.70
1.45
34.16 9.91
33.91 9.65
0.15
0.08
27.94
1.100
0.25
0.01
0.51
0.02
mm
0.505
0.495
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210 0.133 0.067
0.772 0.774 0.366 0.364 0.035 0.745 0.170 0.123 0.057
1.345 0.390
1.335 0.380
0.006
0.003
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-12-28
03-01-10
SOT502A
2003 Feb 24
9
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-90
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Feb 24
10
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-90
NOTES
2003 Feb 24
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/03/pp12
Date of release: 2003 Feb 24
Document order number: 9397 750 10923
相关型号：
BLF2022S-90
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-2, FET RF Power
NXP
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