BLF6G20-180P [NXP]
UHF power LDMOS transistor; UHF功率LDMOS晶体管
| 型号： | BLF6G20-180P |
| 厂家： | 
NXP |
| 描述： | UHF power LDMOS transistor |
| 文件： | 总8页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF6G20-180P
UHF power LDMOS transistor
Rev. 01 — 19 April 2006
Objective data sheet
1. Product profile
1.1 General description
180 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1:
Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
VDS
(V)
32
PL(AV) Gp
ηD
ACPR
(dBc)
−35[1]
(MHz)
(W)
(dB)
17.5
(%)
27.5
2-carrier W-CDMA
1805 to 1880
50
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a
supply voltage of 32 V and an IDq of 1600 mA:
N Average output power = 50 W
N Power gain = 17.5 dB (typ)
N Efficiency = 27.5 %
N ACPR = −35 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (1800 MHz to 2000 MHz)
I Internally matched for ease of use
1.3 Applications
I RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1800 MHz to 2000 MHz frequency range.
BLF6G20-180P
Philips Semiconductors
UHF power LDMOS transistor
2. Pinning information
Table 2:
Pinning
Pin
1
Description
drain1
Simplified outline
Symbol
<tbd>
1
2
2
drain2
5
3
gate1
3
4
4
gate2
[1]
5
source
[1] Connected to flange
3. Ordering information
Table 3:
Ordering information
Type number
Package
Name Description
Version
BLF6G20-180P
-
flanged balanced LDMOST ceramic package; 2
mounting holes; 4 leads
SOT539A
4. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
65
Unit
drain-source voltage
gate-source voltage
drain current
-
V
−0.5 +13
V
A
-
<tbd>
Tstg
Tj
storage temperature
junction temperature
−65
+150 °C
-
225
°C
BLF6G20-180P_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 19 April 2006
2 of 8
BLF6G20-180P
Philips Semiconductors
UHF power LDMOS transistor
5. Thermal characteristics
Table 5:
Symbol
Rth(j-case)
Thermal characteristics
Parameter
thermal resistance from junction Tcase = 80 °C;
Conditions
Typ
Unit
0.45
K/W
to case
PL(AV) = 50 W
6. Characteristics
Table 6:
Characteristics
Tj = 25 °C per section; unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.5 mA
65
-
-
V
VGS(th)
VGSq
IDSS
gate-source threshold voltage VDS = 10 V; ID = 144 mA <tbd> 1.6
<tbd>
V
gate-source quiescent voltage VDS = 28 V; ID = 950 mA <tbd>
2
<tbd>
V
drain leakage current
drain cut-off current
VGS = 0 V; VDS = 28 V
-
-
-
5
-
µA
A
IDSX
VGS = VGS(th) + 3.75 V;
26
VDS = 10 V
IGSS
gfs
gate leakage current
VGS = 8.5 V; VDS = 0 V
VDS = 10 V; ID = 7.2 A
-
-
-
-
450
-
nA
S
forward transconductance
13
0.1
RDS(on) drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 5 A
<tbd>
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 28 V;
f = 1 MHz
-
<tbd>
-
pF
7. Application information
Table 7:
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f1 = 1802.5 MHz; f2 = 1807.5 MHz; f3 = 1872.5 MHz; f4 = 1877.5 MHz;
RF performance at VDS = 32 V; IDq = 1600 mA; Tcase = 25 °C; unless otherwise specified; in a
class-AB production test circuit
Symbol Parameter
Conditions
Min
Typ Max
Unit
W
PL(AV)
Gp
average output power
-
50
-
-
-
power gain
PL(AV) = 50 W
PL(AV) = 50 W
PL(AV) = 50 W
<tbd> 17.5
<tbd> 27.5
dB
%
ηD
drain efficiency
ACPR
adjacent channel power ratio
-
−35 <tbd> dBc
7.1 Ruggedness in class-AB operation
The BLF6G20-180P is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 1600 mA; PL = 180 W (CW); f = 1880 MHz.
BLF6G20-180P_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 19 April 2006
3 of 8
BLF6G20-180P
Philips Semiconductors
UHF power LDMOS transistor
8. Package outline
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
SOT539A
D
A
F
D
1
U
B
1
q
C
w
H
M
M
C
2
1
c
1
2
4
E
E
1
p
H
U
2
5
w
M
M
M
B
A
1
L
3
A
w
b
M
3
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
e
E
E
F
H
H
L
p
Q
q
U
U
w
w
w
3
UNIT
1
1
1
1
2
1
2
11.81
11.56
3.30 2.31
3.05 2.01
5.33
3.96
31.55 31.52
30.94 30.96
9.50 9.53 1.75 17.12 25.53 3.73
9.30 9.27 1.50 16.10 25.27 2.72
41.28 10.29
41.02 10.03
0.15
0.08
35.56
1.400
0.25 0.51 0.25
0.010 0.020 0.010
mm
13.72
0.465
0.455
0.130 0.091
0.120 0.079
0.210
0.156
1.242 1.241
1.218 1.219
0.374 0.375 0.069 0.674 1.005 0.147
0.366 0.365 0.059 0.634 0.995 0.107
1.625 0.405
1.615 0.395
0.006
0.003
inches
0.540
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
99-12-28
00-03-03
SOT539A
Fig 1. Package outline SOT539A
BLF6G20-180P_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 19 April 2006
4 of 8
BLF6G20-180P
Philips Semiconductors
UHF power LDMOS transistor
9. Abbreviations
Table 8:
Acronym
3GPP
Abbreviations
Description
Third Generation Partnership Project
CCDF
CW
Complementary Cumulative Distribution Function
Continuous Wave
DPCH
LDMOS
PAR
Dedicated Physical CHannel
Laterally Diffused Metal Oxide Semiconductor
Peak-to-Average power Ratio
PDPCH
RF
transmission Power of the Dedicated Physical CHannel
Radio Frequency
VSWR
W-CDMA
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
BLF6G20-180P_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 19 April 2006
5 of 8
BLF6G20-180P
Philips Semiconductors
UHF power LDMOS transistor
10. Revision history
Table 9:
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF6G20-180P_1
20060419
Objective data sheet
-
-
BLF6G20-180P_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 19 April 2006
6 of 8
BLF6G20-180P
Philips Semiconductors
UHF power LDMOS transistor
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.semiconductors.philips.com.
malfunction of a Philips Semiconductors product can reasonably be expected
11.2 Definitions
to result in personal injury, death or severe property or environmental
damage. Philips Semiconductors accepts no liability for inclusion and/or use
of Philips Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is for the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Philips Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Philips Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Philips Semiconductors
sales office. In case of any inconsistency or conflict with the short data sheet,
the full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and and
operation of the device at these or any other conditions above those given in
the Characteristics sections of this document is not implied. Exposure to
limiting values for extended periods may affect device reliability.
Terms and conditions of sale — Philips Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.semiconductors.philips.com/profile/terms, including those
pertaining to warranty, intellectual property rights infringement and limitation
of liability, unless explicitly otherwise agreed to in writing by Philips
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Philips Semiconductors does not give any representations
or warranties, expressed or implied, as to the accuracy or completeness of
such information and shall have no liability for the consequences of use of
such information.
Semiconductors. In case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — Philips Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — Philips Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
12. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
BLF6G20-180P_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 19 April 2006
7 of 8
BLF6G20-180P
Philips Semiconductors
UHF power LDMOS transistor
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 4
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
7
7.1
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 7
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 7
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . . 7
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Koninklijke Philips Electronics N.V. 2006.
All rights reserved.
For more information, please visit: http://www.semiconductors.philips.com.
For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com.
Date of release: 19 April 2006
Document identifier: BLF6G20-180P_1
相关型号：
©2020 ICPDF网 联系我们和版权申明