BLF6G22S-45,112 [NXP]

BLF6G22S-45;


型号：	BLF6G22S-45,112
厂家：	NXP
描述：	BLF6G22S-45
文件：	总10页 (文件大小：60K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BLF6G22S-45

Power LDMOS transistor

Rev. 02 — 17 April 2008

Product data sheet

1. Product proﬁle

1.1 General description

45 W LDMOS power transistor for base station applications at frequencies from

2000 MHz to 2200 MHz.

Table 1.

Typical performance

RF performance at T_case= 25 °C in a common source class-AB production test circuit.

Mode of operation

V_DS

(V)

P_L(AV)

(W)

G_p

η_D

ACPR

(dBc)

−48^[1]

(MHz)

(dB)

18.5

(%)

2-carrier W-CDMA

2110 to 2170

2.5

[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;

carrier spacing 5 MHz.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features

I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a

supply voltage of 28 V and an I_Dqof 405 mA:

N Average output power = 2.5 W

N Power gain = 18.5 dB (typ)

N Efﬁciency = 13 %

N ACPR = −48 dBc

I Easy power control

I Integrated ESD protection

I Excellent ruggedness

I High efﬁciency

I Excellent thermal stability

I Designed for broadband operation (2000 MHz to 2200 MHz)

I Internally matched for ease of use

I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

BLF6G22S-45

NXP Semiconductors

Power LDMOS transistor

1.3 Applications

I RF power ampliﬁers for W-CDMA base stations and multicarrier applications in the

2000 MHz to 2200 MHz frequency range

2. Pinning information

Table 2.

Pinning

Description

drain

Simpliﬁed outline

Graphic symbol

gate

[1]

source

sym112

[1] Connected to ﬂange.

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name Description

Version

BLF6G22S-45

ceramic earless ﬂanged package; 2 leads

SOT608B

4. Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

Unit

drain-source voltage

gate-source voltage

storage temperature

junction temperature

V_GS

T_stg

−0.5 +13

−65

+150 °C

T_j

225

°C

5. Thermal characteristics

Table 5.

Symbol

R_th(j-case)

Thermal characteristics

Parameter

thermal resistance from junction T_case= 80 °C;

to case P_L= 12.5 W (CW)

Conditions

Typ

Unit

K/W

1.7

BLF6G22S-45_2

Product data sheet

Rev. 02 — 17 April 2008

2 of 10

BLF6G22S-45

NXP Semiconductors

Power LDMOS transistor

6. Characteristics

Table 6.

Characteristics

T_j= 25 °C per section; unless otherwise speciﬁed.

Symbol Parameter

Conditions

V_GS= 0 V; I_D= 0.5 mA

Min

Typ

Max

Unit

V_(BR)DSSdrain-source breakdown

voltage

V_GS(th)

V_GSq

I_DSS

gate-source threshold voltage V_DS= 10 V; I_D= 72 mA

1.4

1.9

2.15

2.4

2.65

1.5

gate-source quiescent voltage V_DS= 28 V; I_D= 300 mA 1.65

drain leakage current

drain cut-off current

V_GS= 0 V; V_DS= 28 V

µA

I_DSX

V_GS= V_GS(th)+ 3.75 V;

12.5

V_DS= 10 V

I_GSS

g_fs

gate leakage current

V_GS= 11 V; V_DS= 0 V

V_DS= 10 V; I_D= 3.5 A

150

forward transconductance

R_DS(on)drain-source on-state

resistance

V_GS= V_GS(th)+ 3.75 V;

I_D= 2.5 A

0.2

Ω

7. Application information

Table 7.

Application information

Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test

model 1; 1 to 64 PDPCH; f₁= 2112.5 MHz; f₂= 2117.5 MHz; f₃= 2162.5 MHz; f₄= 2167.5 MHz;

RF performance at V_DS= 28 V; I_Dq= 405 mA; T_case= 25 °C; unless otherwise speciﬁed; in a

class-AB production test circuit.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

P_L(AV)

G_p

average output power

2.5

power gain

P_L(AV)= 2.5 W

17.3 18.5 19.7

η_D

drain efﬁciency

10.5 13

−48

ACPR

adjacent channel power ratio

−45

dBc

7.1 Ruggedness in class-AB operation

The BLF6G22S-45 is capable of withstanding a load mismatch corresponding to

VSWR = 10 : 1 through all phases under the following conditions: V_DS= 28 V;

I_Dq= 405 mA; P_L= 45 W (CW); f = 2170 MHz.

BLF6G22S-45_2

Product data sheet

Rev. 02 — 17 April 2008

3 of 10

BLF6G22S-45

NXP Semiconductors

Power LDMOS transistor

001aah604

(%)

(dB)

(W)

V_DS= 28 V; I_Dq= 405 mA; f = 2170 MHz.

Fig 1. One-tone CW power gain and drain efﬁciency as functions of load power; typical

values

001aah605

001aah606

−10

IMD

(%)

(dBc)

−20

(dB)

IMD3

−30

−40

−50

−60

−70

IMD5

IMD7

L(PEP)

(W)

L(PEP)

(W)

V_DS= 28 V; I_Dq= 405 mA; f₁= 2170 MHz;

f₂= 2170.1 MHz.

V_DS= 28 V; I_Dq= 405 mA; f₁= 2170 MHz;

f₂= 2170.1 MHz.

Fig 2. Two-tone CW power gain and drain efﬁciency

as functions of peak envelope load power;

typical values

Fig 3. Intermodulation distortion as a function of

peak envelope load power; typical values

BLF6G22S-45_2

Product data sheet

Rev. 02 — 17 April 2008

4 of 10

BLF6G22S-45

NXP Semiconductors

Power LDMOS transistor

001aah607

001aah608

−30

ACPR

(dBc)

−35

(%)

(dB)

−40

−45

−50

−55

−60

(W)

L(AV)

V_DS= 28 V; I_Dq= 405 mA; f₁= 2162.5 MHz;

f₂= 2167.5 MHz; carrier spacing 5 MHz.

V_DS= 28 V; I_Dq= 405 mA; f₁= 2162.5 MHz;

f₂= 2167.5 MHz; carrier spacing 5 MHz.

Fig 4. 2-carrier W-CDMA power gain and drain

efﬁciency as functions of average load power;

typical values

Fig 5. 2-carrier W-CDMA adjacent power channel

ratio as a function of average load power;

typical values

8. Test information

C15

C11 C12 C13 C14

C10

C16

C18

C17

input

output

50 Ω

001aah609

See Table 8 for list of components.

Fig 6. Test circuit for operation at 2110 MHz and 2170 MHz

BLF6G22S-45_2

Product data sheet

Rev. 02 — 17 April 2008

5 of 10

BLF6G22S-45

NXP Semiconductors

Power LDMOS transistor

C16

C15

C10

C11 C12 C13

C14

C18

C17

001aah610

Striplines are on a double copper-clad Rogers Duroid 5880 Printed-Circuit Board (PCB) with

ε_r= 2.2 and thickness = 0.79 mm.

See Table 8 for list of components.

Fig 7. Component layout for 2110 MHz and 2170 MHz test circuit

Table 8.

List of components

For test circuit, see Figure 6 and Figure 7.

Component

Description

Value

Remarks

[1]

C1, C2, C17, C18

multilayer ceramic chip capacitor

tantalum capacitor

6.8 pF

10 µF

C3, C15

C4, C5

C6, C12

multilayer ceramic chip capacitor

electrolytic capacitor

1.5 µF

10 pF

[2]

0.5 pF

1.2 pF

1.0 pF

100 nF

220 nF

4.7 µF

220 µF, 63 V

5.6 Ω

C10, C11

C13

C14

C16

chip resistor

[1] American technical ceramics type 100A or capacitor of same quality.

[2] American technical ceramics type 100B or capacitor of same quality.

BLF6G22S-45_2

Product data sheet

Rev. 02 — 17 April 2008

6 of 10

BLF6G22S-45

NXP Semiconductors

Power LDMOS transistor

9. Package outline

Ceramic earless flanged package; 2 leads

SOT608B

5 mm

scale

DIMENSIONS (mm dimensions are derived from the original inch dimensions)

UNIT

4.62 7.24 0.15 10.21 10.29 10.21 10.29 1.14 15.75 1.70 10.24 10.24

3.76 6.99 0.10 10.03 10.01 10.03 0.89 1.35 9.98

0.51

10.01

14.73

9.98

0.182 0.285 0.006 0.402 0.405 0.402 0.405 0.045 0.620 0.067 0.403 0.403

inch

0.020

0.148 0.275 0.004

0.395 0.394 0.395 0.035

0.053 0.393

0.580 0.393

0.394

REFERENCES

JEDEC JEITA

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC

06-11-27

06-12-06

SOT608B

Fig 8. Package outline SOT608B

BLF6G22S-45_2

Product data sheet

Rev. 02 — 17 April 2008

7 of 10

BLF6G22S-45

NXP Semiconductors

Power LDMOS transistor

10. Abbreviations

Table 9.

Abbreviations

Description

3rd Generation Partnership Project

Acronym

3GPP

CCDF

Complementary Cumulative Distribution Function

Continuous Waveform

DPCH

IMD

Dedicated Physical CHannel

InterModulation Distortion

LDMOS

PAR

Laterally Diffused Metal-Oxide Semiconductor

Peak-to-Average power Ratio

PDPCH

transmission Power of the Dedicated Physical CHannel

Radio Frequency

VSWR

W-CDMA

Voltage Standing-Wave Ratio

Wideband Code Division Multiple Access

11. Revision history

Table 10. Revision history

Document ID

Release date Data sheet status

20080417 Product data sheet

Change notice Supersedes

BLF6G22-45_BLF6G22S-45_1

BLF6G22S-45_2

Modiﬁcations:

• The combined data sheet is split up into two separate data sheets.

• Table 1 and Table 7: ACPR values changed.

BLF6G22-45_BLF6G22S-45_1 20080219

Preliminary data sheet

BLF6G22S-45_2

Product data sheet

Rev. 02 — 17 April 2008

8 of 10

BLF6G22S-45

NXP Semiconductors

Power LDMOS transistor

12. Legal information

12.1 Data sheet status

Document status^[1][2]

Product status^[3]

Development

Deﬁnition

Objective [short] data sheet

This document contains data from the objective speciﬁcation for product development.

This document contains data from the preliminary speciﬁcation.

This document contains the product speciﬁcation.

Preliminary [short] data sheet Qualiﬁcation

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Deﬁnitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

malfunction of an NXP Semiconductors product can reasonably be expected

12.2 Deﬁnitions

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

13. Contact information

For more information, please visit: http://www.nxp.com

For sales ofﬁce addresses, please send an email to: salesaddresses@nxp.com

BLF6G22S-45_2

Product data sheet

Rev. 02 — 17 April 2008

9 of 10

BLF6G22S-45

NXP Semiconductors

Power LDMOS transistor

14. Contents

Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

General description. . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

Thermal characteristics. . . . . . . . . . . . . . . . . . . 2

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

Application information. . . . . . . . . . . . . . . . . . . 3

Ruggedness in class-AB operation. . . . . . . . . . 3

Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8

7.1

Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9

Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9

Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12.1

12.2

12.3

12.4

Contact information. . . . . . . . . . . . . . . . . . . . . . 9

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 17 April 2008

Document identifier: BLF6G22S-45_2

BLF6G22S-45,112 [NXP]

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