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BLF6G27-10,112 [NXP]

BLF6G27-10;
BLF6G27-10,112
型号： BLF6G27-10,112
厂家： NXP    NXP
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BLF6G27-10

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BLF6G27-10; BLF6G27-10G  
WiMAX power LDMOS transistor  
Rev. 4 — 16 December 2014  
Product data sheet  
1. Product profile  
1.1 General description  
10 W LDMOS power transistor for base station applications at frequencies from  
2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz.  
Table 1.  
Typical performance  
RF performance at Tcase = 25 C in a class-AB production test circuit.  
Mode of operation  
f
VDS PL(AV) Gp  
D  
(dB) (%) (dBc)  
19 20  
49[2]  
22.5 24.8 47[2]  
ACPR885k  
ACPR1980k  
(dBc)  
64[2]  
(MHz)  
(V)  
28  
28  
(W)  
2
1-carrier N-CDMA[1]  
IS-95  
2500 to 2700  
2300 to 2400  
2
64[2]  
[1] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13).  
PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz.  
[2] Measured within 30 kHz bandwidth.  
1.2 Features and benefits  
Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,  
sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on  
CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and  
an IDq of 130 mA:  
Qualified up to a maximum VDS operation of 32 V  
Integrated ESD protection  
Excellent ruggedness  
High efficiency  
Excellent thermal stability  
Designed for broadband operation  
Internally matched for ease of use  
Low gold plating thickness on leads  
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances  
(RoHS)  
1.3 Applications  
RF power amplifiers for base stations and multi carrier applications in the  
2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz frequency range.  
BLF6G27-10; BLF6G27-10G  
NXP Semiconductors  
WiMAX power LDMOS transistor  
2. Pinning information  
Table 2.  
Pin  
Pinning  
Description  
Simplified outline  
Graphic symbol  
BLF6G27-10 (SOT975B)  
1
2
3
drain  
gate  
1
1
[1]  
source  
2
3
sym112  
2
1
BLF6G27-10G (SOT975C)  
1
2
3
drain  
gate  
1
[1]  
source  
2
3
sym112  
2
[1] Connected to flange.  
3. Ordering information  
Table 3.  
Type number Package  
Name Description  
Ordering information  
Version  
BLF6G27-10  
-
earless flanged ceramic package; 2 leads  
earless flanged ceramic package; 2 leads  
SOT975B  
SOT975C  
BLF6G27-10G -  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
VGS  
ID  
Parameter  
Conditions  
Min  
Max  
Unit  
V
drain-source voltage  
gate-source voltage  
drain current  
-
65  
0.5 +13  
V
-
3.5  
A
Tstg  
Tj  
storage temperature  
junction temperature  
65  
+150 C  
225 C  
-
BLF6G27-10_BLF6G27-10G  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 16 December 2014  
2 of 15  
BLF6G27-10; BLF6G27-10G  
NXP Semiconductors  
WiMAX power LDMOS transistor  
5. Thermal characteristics  
Table 5.  
Symbol  
Rth(j-case)  
Thermal characteristics  
Parameter  
thermal resistance from Tcase = 80 C;  
Conditions  
Type  
Typ  
4.0  
4.0  
Unit  
K/W  
K/W  
BLF6G27-10  
BLF6G27-10G  
junction to case  
PL = 10 W (CW)  
6. Characteristics  
Table 6.  
Characteristics  
Tj = 25 C per section; unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Unit  
V(BR)DSS drain-source breakdown  
voltage  
VGS = 0 V; ID = 0.18 mA 65  
-
-
V
VGS(th)  
IDSS  
gate-source threshold voltage VDS = 10 V; ID = 18 mA  
1.4  
-
1.9  
2.4  
1.4  
-
V
drain leakage current  
drain cut-off current  
VGS = 0 V; VDS = 28 V  
-
-
A  
A
IDSX  
VGS = VGS(th) + 3.75 V;  
VDS = 10 V  
2.7  
IGSS  
gfs  
gate leakage current  
VGS = 11 V; VDS = 0 V  
VDS = 10 V; ID = 0.9 A  
-
-
-
-
140  
-
nA  
S
forward transconductance  
0.8  
328  
RDS(on) drain-source on-state  
resistance  
VGS = VGS(th) + 3.75 V;  
ID = 0.6 A  
1256 m  
Crs  
feedback capacitance  
VGS = 0 V; VDS = 28 V;  
f = 1 MHz  
-
3.6  
- pF  
7. Application information  
Table 7.  
Application information  
Mode of operation: Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh  
codes 8 - 13). PAR 9.7 dB at 0.01 % probability on CCDF; Channel Bandwidth is 1.23 MHz;  
f1 = 2500 MHz; f2 = 2600 MHz; f3 = 2700 MHz; RF performance at VDS = 28 V; IDq = 130 mA;  
Tcase = 25 C; unless otherwise specified; in a class-AB production circuit.  
Symbol  
PL(AV)  
Gp  
Parameter  
Conditions  
Min Typ Max Unit  
average output power  
power gain  
-
2
-
-
-
-
W
PL(AV) = 2 W  
PL(AV) = 2 W  
PL(AV) = 2 W  
17.5 19  
dB  
dB  
%
RLin  
input return loss  
drain efficiency  
-
10  
20  
D  
18  
-
[1]  
[1]  
ACPR885k adjacent channel power ratio (885 kHz) PL(AV) = 2 W  
ACPR1980k adjacent channel power ratio (1980 kHz) PL(AV) = 2 W  
49 46 dBc  
64 61 dBc  
-
[1] Measured within 30 kHz bandwidth.  
7.1 Ruggedness in class-AB operation  
The BLF6G27-10 and BLF6G27-10G are capable of withstanding a load mismatch  
corresponding to VSWR = 10 : 1 through all phases under the following conditions:  
V
DS = 28 V; IDq = 130 mA; PL = PL(1dB); f = 2700 MHz.  
BLF6G27-10_BLF6G27-10G  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 16 December 2014  
3 of 15  
BLF6G27-10; BLF6G27-10G  
NXP Semiconductors  
WiMAX power LDMOS transistor  
7.2 NXP WiMAX signal  
7.2.1 WiMAX signal description  
frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame;  
frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = Tg / Tb = 1 / 8;  
FFT = 1024; zone type = PUSC; = 97.7 %; number of symbols = 46;  
number of subchannels = 30; PAR = 9.5 dB.  
Preamble: 1 symbol 30 subchannels; PL = PL(nom) + 3.86 dB.  
Table 8.  
Frame structure  
Frame contents  
Modulation technique  
QPSK1/2  
Data length  
3 bit  
Zone 0 FCH 2 symbols 4 subchannels  
Zone 0 data 2 symbols 26 subchannels  
Zone 0 data 44 symbols 30 subchannels  
64QAM3/4  
692 bit  
64QAM3/4  
10000 bit  
7.2.2 Graphs  
001aaj351  
001aaj352  
16  
25  
50  
G
(dB)  
η
D
(%)  
p
EVM  
(%)  
23  
40  
12  
G
p
21  
19  
17  
15  
30  
20  
10  
0
8
4
η
D
0
10  
−1  
−1  
1
10  
10  
1
10  
P
(W)  
P
(W)  
L(AV)  
L
VDS = 28 V; IDq = 130 mA; f = 2600 MHz.  
VDS = 28 V; IDq = 130 mA; f = 2600 MHz.  
Fig 1. EVM as a function of load power;  
typical values  
Fig 2. Power gain and drain efficiency as function of  
average load power; typical values  
BLF6G27-10_BLF6G27-10G  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 16 December 2014  
4 of 15  
BLF6G27-10; BLF6G27-10G  
NXP Semiconductors  
WiMAX power LDMOS transistor  
001aaj353  
−20  
ACPR  
(dBc)  
ACPR  
10M  
−30  
−40  
−50  
−60  
ACPR  
ACPR  
20M  
30M  
−1  
10  
1
10  
P
(W)  
L(AV)  
VDS = 28 V; IDq = 130 mA; f = 2600 MHz.  
Fig 3. Adjacent channel power ratio as a function of average load power; typical values  
7.3 Single carrier NA IS-95 broadband performance at 2 W average  
7.3.1 Graphs  
001aaj354  
001aaj355  
25  
23  
−45  
(2)  
(1)  
G
(dB)  
η
ACPR  
(dBc)  
p
D
(%)  
23  
22  
−50  
−55  
−60  
−65  
−70  
ACPR  
885k  
η
D
21  
19  
17  
15  
21  
20  
19  
18  
(1)  
(2)  
G
p
ACPR  
ACPR  
1500k  
1980k  
2540  
(2)  
(1)  
2500  
2540  
2580  
2620  
2660  
2700  
2500  
2580  
2620  
2660  
2700  
f (MHz)  
f (MHz)  
VDS = 28 V; IDq = 130 mA; Single Carrier IS-95;  
PAR = 9.7 dB at 0.01 % probability.  
VDS = 28 V; IDq = 130 mA; single carrier IS-95;  
PAR = 9.7 dB at .01 % probability.  
(1) Low frequency component  
(2) High frequency component  
Fig 4. Power gain and drain efficiency as function of  
frequency; typical values  
Fig 5. Adjacent channel power ratio as a function of  
frequency; typical values  
BLF6G27-10_BLF6G27-10G  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 16 December 2014  
5 of 15  
BLF6G27-10; BLF6G27-10G  
NXP Semiconductors  
WiMAX power LDMOS transistor  
001aaj356  
001aaj357  
24  
50  
−35  
G
p
(dB)  
η
D
(%)  
ACPR  
(dBc)  
22  
40  
−45  
G
p
(2)  
20  
18  
16  
14  
30  
20  
10  
0
(1)  
ACPR  
−55  
−65  
−75  
885k  
ACPR  
ACPR  
1500k  
(1)  
(2)  
1980k  
η
D
(2)  
(1)  
−1  
−1  
10  
1
10  
10  
1
10  
P
(W)  
P
(W)  
L(AV)  
L(AV)  
VDS = 28 V; IDq = 130 mA; f = 2600 MHz;  
VDS = 28 V; IDq = 130 mA; f = 2600 MHz;  
single carrier IS-95; PAR = 9.7 dB at 0.01 % probability;  
channel bandwidth = 1.23 MHz.  
single carrier IS-95; PAR = 9.7 dB at 0.01 % probability;  
channel bandwidth = 1.23 MHz; IBW = 30 kHz.  
(1) Low frequency component  
(2) High frequency component  
Fig 6. Power gain and drain efficiency as function of  
load power; typical values  
Fig 7. Adjacent channel power ratio as a function of  
load power; typical values  
001aaj358  
001aaj359  
25  
0.16  
G
(dB)  
p
P
(W)  
i
23  
(2)  
(1)  
(3)  
0.12  
(3)  
(2)  
(1)  
21  
19  
17  
15  
0.08  
0.04  
0
−1  
−1  
10  
1
10  
10  
1
10  
P
(W)  
P (W)  
L
L
VDS = 28 V; IDq = 130 mA; single carrier IS-95;  
PAR = 9.7 dB at 0.01 % probability;  
channel bandwidth = 1.23 MHz.  
VDS = 28 V; IDq = 130 mA; single carrier IS-95;  
PAR = 9.7 dB at 0.01 % probability;  
channel bandwidth = 1.23 MHz.  
(1) f = 2500 MHz  
(2) f = 2600 MHz  
(3) f = 2700 MHz  
(1) f = 2500 MHz  
(2) f = 2600 MHz  
(3) f = 2700 MHz  
Fig 8. Power gain as a function of load power;  
typical values  
Fig 9. Input power as a function of load power;  
typical values  
BLF6G27-10_BLF6G27-10G  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 16 December 2014  
6 of 15  
BLF6G27-10; BLF6G27-10G  
NXP Semiconductors  
WiMAX power LDMOS transistor  
8. Test information  
L1  
C8  
R2  
C5  
C6  
C3  
C2  
R1  
C1  
C7  
C4  
BLF6G27-10  
Input Rev 2  
NXP  
BLF6G27-10  
Output Rev 2  
NXP  
PCB1  
PCB2  
001aaj360  
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with r = 3.5 and  
thickness = 0.76 mm.  
See Table 9 for list of components.  
Fig 10. Component layout for 2500 MHz to 2700 MHz test circuit BLF6G27-10  
BLF6G27-10_BLF6G27-10G  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 16 December 2014  
7 of 15  
BLF6G27-10; BLF6G27-10G  
NXP Semiconductors  
WiMAX power LDMOS transistor  
L1  
C8  
R2  
C2  
C5  
C6  
C3  
R1  
C1  
C7  
C4  
BLF6G27-10G  
Input Rev 1  
NXP  
BLF6G27-10G  
Output Rev 1  
NXP  
PCB1  
PCB2  
001aaj361  
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with r = 3.5 and  
thickness = 0.76 mm.  
See Table 9 for list of components.  
Fig 11. Component layout for 2500 MHz to 2700 MHz test circuit BLF6G27-10G  
Table 9.  
List of components  
For test circuit, see Figure 10 and Figure 11.  
Component  
Description  
Value  
Remarks  
ATC 100A  
TDK  
C1, C3, C5, C7  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
electrolytic capacitor  
22 pF  
C2  
1.5 F  
1.6 pF  
10 F; 50 V  
220 F; 63 V  
-
C4  
ATC 100A  
TDK  
C6  
C8  
Elco  
L1  
ferrite SMD bead  
Ferroxcube bead  
Thin film  
R1, R2  
SMD resistor  
8.2   
BLF6G27-10_BLF6G27-10G  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 16 December 2014  
8 of 15  
BLF6G27-10; BLF6G27-10G  
NXP Semiconductors  
WiMAX power LDMOS transistor  
Table 10. Measured test circuit impedances  
f
Zi  
Zo  
(GHz)  
BLF6G27-10  
2.50  
()  
()  
5.32 j8.61  
4.85 j8.09  
4.40 j7.55  
3.98 j7.00  
3.59 j6.43  
9.46 j6.99  
9.44 j7.41  
9.32 j7.86  
9.10 j8.31  
8.77 j8.75  
2.55  
2.60  
2.65  
2.70  
BLF6G27-10G  
2.50  
5.67 j13.62  
5.06 j12.79  
4.55 j11.98  
4.10 j11.19  
3.71 j10.43  
10.70 j7.38  
10.61 j8.00  
10.38 j8.63  
10.00 j9.24  
9.49 j9.79  
2.55  
2.60  
2.65  
2.70  
BLF6G27-10_BLF6G27-10G  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 16 December 2014  
9 of 15  
BLF6G27-10; BLF6G27-10G  
NXP Semiconductors  
WiMAX power LDMOS transistor  
9. Package outline  
Earless flanged ceramic package; 2 leads  
SOT975B  
D
A
F
U
1
1
1
D
H
A
c
1
E
1
U
2
H
E
2
b
w
A
Q
1
0
5 mm  
scale  
Dimensions (mm dimensions are derived from the original inch dimensions)  
Unit  
A
b
c
D
D
E
E
F
H
H
1
Q
U
U
w
1
1
1
1
2
max 3.15 3.38 0.23 6.55 6.93 6.55 6.93 0.23 11.05 7.49 0.76 6.43 6.43  
mm nom  
0.51  
0.02  
2.59 3.23 0.18 6.40 6.78 6.40 6.78 0.18 10.80 6.73 0.66 6.27 6.27  
min  
max 0.124 0.133 0.009 0.258 0.273 0.258 0.273 0.009 0.435 0.295 0.030 0.253 0.253  
inches nom  
0.102 0.127 0.007 0.252 0.267 0.252 0.267 0.007 0.425 0.265 0.026 0.247 0.247  
References  
min  
sot975b_po  
Outline  
version  
European  
projection  
Issue date  
IEC  
JEDEC  
JEITA  
07-09-28  
14-10-20  
SOT975B  
Fig 12. Package outline SOT975B  
BLF6G27-10_BLF6G27-10G  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 16 December 2014  
10 of 15  
BLF6G27-10; BLF6G27-10G  
NXP Semiconductors  
WiMAX power LDMOS transistor  
Earless flanged ceramic package; 2 leads  
SOT975C  
Z
4
Z
6
Z
3
1
Z
5
D
A
Z
F
U
D
H
1
1
1
A
Z
2
minimal dimensions for solder pattern  
L
p
1
L
E
U
2
E
H
1
0
5 mm  
scale  
Z
Z
Z
6
α
°
4
5
7
2
3.30 1.14 1.52  
0.130 0.045 0.060  
°
°
0
7
α
b
w
A
1
Q
°
0
Dimensions (mm dimensions are derived from the original inch dimensions)  
Unit  
A
b
c
D
D
E
E
F
H
H
1
L
L
Q
U
U
w
Z
1
Z
2
Z
3
1
1
p
1
2
1
max 3.15 3.38 0.23 6.55 6.93 6.55 6.93 0.23 10.29 7.49  
1.02 +0.05 6.43 6.43  
mm nom  
1.65  
0.51 6.35 6.35 1.02  
0.020 0.250 0.250 0.040  
2.59 3.23 0.18 6.40 6.78 6.40 6.78 0.18 10.03 6.73  
0.51 -0.05 6.27 6.27  
0.040 +0.002 0.253 0.253  
min  
max 0.124 0.133 0.009 0.258 0.273 0.258 0.273 0.009 0.405 0.295  
inches nom  
0.065  
0.102 0.127 0.007 0.252 0.267 0.252 0.267 0.007 0.395 0.265  
References  
0.020 -0.002 0.247 0.247  
min  
sot975c_po  
Outline  
version  
European  
projection  
Issue date  
IEC  
JEDEC  
JEITA  
08-07-10  
14-10-13  
SOT975C  
Fig 13. Package outline SOT975C  
BLF6G27-10_BLF6G27-10G  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 16 December 2014  
11 of 15  
BLF6G27-10; BLF6G27-10G  
NXP Semiconductors  
WiMAX power LDMOS transistor  
10. Abbreviations  
Table 11. Abbreviations  
Acronym  
CCDF  
CW  
Description  
Complementary Cumulative Distribution Function  
Continuous Wave  
EVM  
Error Vector Magnitude  
FCH  
Frame Control Header  
FFT  
Fast Fourier Transform  
IBW  
Instantaneous BandWidth  
IS-95  
LDMOS  
NA  
Interim Standard 95  
Laterally Diffused Metal-Oxide Semiconductor  
North American  
N-CDMA  
PAR  
Narrowband Code Division Multiple Access  
Peak-to-Average power Ratio  
Partial Usage of SubChannels  
Radio Frequency  
PUSC  
RF  
SMD  
Surface Mounted Device  
VSWR  
WCS  
WiMAX  
Voltage Standing-Wave Ratio  
Wireless Communications Service  
Worldwide Interoperability for Microwave Access  
11. Revision history  
Table 12. Revision history  
Document ID  
Release date Data sheet status Change notice Supersedes  
BLF6G27-10_BLF6G27-10G v.4 20141216  
Product data sheet  
-
BLF6G27-10_BLF6G27-10G v.3  
Modifications • Package outline drawings updated.  
BLF6G27-10_BLF6G27-10G v.3 20110228  
BLF6G27-10_BLF6G27-10G v.2 20101202  
BLF6G27-10_BLF6G27-10G v.1 20090204  
Product data sheet  
Product data sheet  
Product data sheet  
-
-
-
BLF6G27-10_BLF6G27-10G v.2  
BLF6G27-10_BLF6G27-10G v.1  
-
BLF6G27-10_BLF6G27-10G  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 16 December 2014  
12 of 15  
BLF6G27-10; BLF6G27-10G  
NXP Semiconductors  
WiMAX power LDMOS transistor  
12. Legal information  
12.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
Suitability for use — NXP Semiconductors products are not designed,  
12.2 Definitions  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors and its suppliers accept no liability for  
inclusion and/or use of NXP Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at the customer’s own  
risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
12.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. NXP Semiconductors takes no  
responsibility for the content in this document if provided by an information  
source outside of NXP Semiconductors.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
BLF6G27-10_BLF6G27-10G  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 16 December 2014  
13 of 15  
BLF6G27-10; BLF6G27-10G  
NXP Semiconductors  
WiMAX power LDMOS transistor  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
NXP Semiconductors’ specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies NXP Semiconductors for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond NXP Semiconductors’  
standard warranty and NXP Semiconductors’ product specifications.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific NXP Semiconductors product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor tested  
in accordance with automotive testing or application requirements. NXP  
Semiconductors accepts no liability for inclusion and/or use of  
non-automotive qualified products in automotive equipment or applications.  
12.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without NXP Semiconductors’ warranty of the  
13. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
BLF6G27-10_BLF6G27-10G  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 16 December 2014  
14 of 15  
BLF6G27-10; BLF6G27-10G  
NXP Semiconductors  
WiMAX power LDMOS transistor  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
7
7.1  
7.2  
7.2.1  
7.2.2  
7.3  
Application information. . . . . . . . . . . . . . . . . . . 3  
Ruggedness in class-AB operation . . . . . . . . . 3  
NXP WiMAX signal. . . . . . . . . . . . . . . . . . . . . . 4  
WiMAX signal description. . . . . . . . . . . . . . . . . 4  
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Single carrier NA IS-95 broadband  
performance at 2 W average . . . . . . . . . . . . . . 5  
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
7.3.1  
8
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12  
9
10  
11  
12  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
12.1  
12.2  
12.3  
12.4  
13  
14  
Contact information. . . . . . . . . . . . . . . . . . . . . 14  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP Semiconductors N.V. 2014.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 16 December 2014  
Document identifier: BLF6G27-10_BLF6G27-10G  

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