BLF7G20LS-140P,118 [NXP]
BLF7G20LS-140P;
| 型号： | BLF7G20LS-140P,118 |
| 厂家： | 
NXP |
| 描述： | BLF7G20LS-140P 放大器 CD 晶体管 |
| 文件： | 总13页 (文件大小：251K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF7G20LS-140P
Power LDMOS transistor
Rev. 2 — 17 August 2010
Product data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
IDq
VDS PL(AV)
Gp
ηD
ACPR400k
ACPR600k
EVMrms
(MHz)
(mA) (V)
(W)
125
60
(dB) (%) (dBc)
(dBc)
-
(%)
-
CW
1805 to 1880
1805 to 1880
850
850
28
28
17
54
-
GSM EDGE
17.5 41
−61
−75
2.7
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation (1800 MHz to 2000 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 1800 MHz to
2000 MHz frequency range
BLF7G20LS-140P
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
drain1
Simplified outline
Graphic symbol
1
2
1
2
drain2
3
gate1
5
3
5
4
4
gate2
[1]
3
4
5
source
2
sym117
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLF7G20LS-140P
-
earless flanged LDMOST ceramic package; 4 leads
SOT1121B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
65
Unit
V
drain-source voltage
gate-source voltage
storage temperature
junction temperature
-
VGS
Tstg
−0.5 +13
V
−65
+150 °C
Tj
-
200
°C
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Tcase = 80 °C; PL = 100 W
Typ Unit
Rth(j-c)
thermal resistance from junction to case
0.41 K/W
BLF7G20LS-140P
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 17 August 2010
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NXP Semiconductors
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
65
1.5 1.9
Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.9 mA
-
-
V
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
VDS = 10 V; ID = 90 mA
VGS = 0 V; VDS = 28 V
2.3
2
V
-
-
-
μA
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
14
-
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 2.5 A
-
-
-
-
200 nA
forward transconductance
6.45
0.15
-
-
S
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 3.15 A
Ω
7. Test information
Table 7.
Application information
f = 1805 MHz and 1880 MHz; RF performance at VDS = 28 V; IDq = 850 mA; Tcase = 25 °C;
2 sections combined unless otherwise specified; in a class-AB production test circuit.
Symbol
Parameter
Conditions
Min Typ
Max Unit
Mode of operation: GSM EDGE; PL(AV) = 60 W
Gp
power gain
16.3 17.5
-
dB
dB
%
RLin
ηD
input return loss
drain efficiency
-
−15
41
−8
-
37
-
ACPR400k adjacent channel power ratio (400 kHz)
ACPR600k adjacent channel power ratio (600 kHz)
−61
−75
2.7
8.5
−56.5 dBc
−69.5 dBc
-
EVMrms
EVMM
RMS EDGE signal distortion error
peak EDGE signal distortion error
-
4.0
%
%
-
12.5
Mode of operation: CW; PL(AV) = 125 W
Gp
power gain
16
48
17
54
-
-
dB
%
ηD
drain efficiency
7.1 Ruggedness in class-AB operation
The BLF7G20LS-140P is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 850 mA; PL = 140 W (CW); f = 1805 MHz.
BLF7G20LS-140P
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 17 August 2010
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NXP Semiconductors
Power LDMOS transistor
7.2 One-tone CW
001aam399
20
70
η
G
(dB)
19
D
p
(%)
60
G
18
17
16
15
14
13
50
40
30
20
10
0
p
η
D
0
30
60
90
120
150
P
180
(W)
L
VDS = 28 V; IDq = 850 mA; f = 1880 MHz.
Fig 1. One-tone CW power gain and drain efficiency as function of load power;
typical values
7.3 Two-tone CW
001aam400
001aam401
19
60
η
(%)
50
0
IMD
(dBc)
G
p
(dB)
18.5
D
−10
−20
−30
−40
−50
−60
−70
−80
IMD3
18
17.5
17
40
30
20
10
0
G
p
IMD5
IMD7
η
D
16.5
16
0
20
40
60
80
100
(W)
0
20
40
60
80
100
P (W)
L
P
L
VDS = 28 V; IDq = 850 mA; f1 = 1879.95 MHz;
f2 = 1880.05 MHz.
VDS = 28 V; IDq = 850 mA; f1 = 1879.95 MHz;
f2 = 1880.05 MHz.
Fig 2. Two-tone CW power gain and drain efficiency
as function of load power; typical values
Fig 3. Two-tone CW intermodulation distortion as a
function of load power; typical values
BLF7G20LS-140P
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Product data sheet
Rev. 2 — 17 August 2010
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Power LDMOS transistor
7.4 GSM EDGE
001aam402
001aam403
19
60
η
(%)
50
−45
ACPR
(dBc)
G
p
(dB)
18.5
D
−50
−55
−60
−65
−70
−75
−80
18
17.5
17
40
30
20
10
0
G
p
ACPR
ACPR
400k
600k
40
η
D
16.5
16
0
20
40
60
80
100
(W)
0
20
60
80
100
P (W)
L
P
L
VDS = 28 V; IDq = 850 mA; f = 1880 MHz.
VDS = 28 V; IDq = 850 mA; f = 1880 MHz.
Fig 4. GSM EDGE power gain and drain efficiency as
function of load power; typical values
Fig 5. GSM EDGE ACPR at 400 kHz and at 600 kHz as
function of load power; typical values
001aam404
50
EVM
(%)
40
30
20
10
EVM
M
EVM
rms
0
0
20
40
60
80
100
(W)
P
L
VDS = 28 V; IDq = 850 mA; f = 1880 MHz.
Fig 6. GSM-EDGE RMS EVM and peak EVM as function of load power; typical values
BLF7G20LS-140P
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 17 August 2010
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Power LDMOS transistor
7.5 Single carrier IS-95
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
001aam405
001aam406
19
40
−30
ACPR
(dBc)
G
(dB)
η
D
(%)
p
ACPR
885k
−40
−50
−60
−70
−80
18.5
30
G
p
18
17.5
17
20
10
0
ACPR
1980k
η
D
0
10
20
30
40
0
10
20
30
40
P
L
(W)
P (W)
L
VDS = 28 V; IDq = 1080 mA; f = 1880 MHz.
VDS = 28 V; IDq = 1080 mA; f = 1880 MHz.
Fig 7. Single carrier IS-95 power gain and drain
efficiency as function of load power;
typical values
Fig 8. Single carrier IS-95 ACPR at 885 kHz and at
1980 kHz as function of load power;
typical values
001aam407
11
PAR
10
9
8
7
6
5
0
10
20
30
40
P
L
(W)
VDS = 28 V; IDq = 1080 mA; f = 1880 MHz.
Fig 9. Single carrier IS-95 peak-to-average power ratio as a function of load power;
typical values
BLF7G20LS-140P
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 17 August 2010
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Power LDMOS transistor
7.6 Single carrier W-CDMA
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
Channel bandwidth is 3.84 MHz.
001aam408
001aam409
19.5
60
−20
G
(dB)
η
(%)
50
p
D
ACPR
(dBc)
ACPR
5M
19
−30
−40
−50
−60
−70
18.5
18
40
30
20
10
0
G
p
ACPR
10M
η
D
17.5
17
16.5
0
20
40
60
80
100
(W)
0
15
30
45
60
75
90
P (W)
L
P
L
VDS = 28 V; IDq = 1080 mA; f = 1880 MHz.
VDS = 28 V; IDq = 1080 mA; f = 1880 MHz.
Fig 10. Single carrier W-CDMA power gain and drain
efficiency as function of load power;
typical values
Fig 11. Single carrier W-CDMA ACPR at 5 MHz and at
10 MHz as function of load power;
typical values
7.7 Test circuit
Table 8.
List of components
For test circuit see Figure 12.
Component
C1, C2, C3
C4, C5
Description
Value
Remarks
[1]
[2]
[3]
[2]
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
24 pF
4.7 μF
11 pF
C6, C7, C8
C9, C10
C11
10 μF
470 μF; 63 V
12 Ω
R1, R2
SMD resistor
Philips 1206
[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] TDK or capacitor of same quality.
[3] American Technical Ceramics type 100B or capacitor of same quality.
BLF7G20LS-140P
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 17 August 2010
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NXP Semiconductors
Power LDMOS transistor
C11
C9
C6
C4
C2
R1
C8
C1
BLF7G20L-140P OUTPUT REV 1
BLF7G20L-140P INPUT REV 1
R2
C7
C5
C3
C10
001aal830
Printed-Circuit Board (PCB): Taconic RF35; εr = 3.5 F/m; thickness = 0.76 mm; thickness copper plating = 35 μm.
See Table 8 for a list of components.
Fig 12. Component layout for class-AB production test circuit
7.8 Impedance information
Table 9.
Typical impedance
Typical values valid for both section in parallel unless otherwise specified.
f
ZS
ZL
MHz
1800
1840
1880
Ω
Ω
1.1 − j3.8
1.3 − j3.7
1.2 − j3.8
1.8 − j2.8
1.7 − j2.6
1.6 − j2.5
gate
drain
Z
S
Z
L
001aal831
Fig 13. Definition of transistor impedance
BLF7G20LS-140P
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 17 August 2010
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NXP Semiconductors
Power LDMOS transistor
8. Package outline
Earless flanged LDMOST ceramic package; 4 leads
SOT1121B
D
A
F
5
D
1
D
U
H
1
c
w
2
D
1
1
2
U
2
E
1
H
E
3
4
b
Q
w
3
e
0
5
10 mm
Q
scale
Dimensions
(1)
Unit
A
b
c
D
D
1
e
E
E
1
F
H
H
1
U
1
U
2
w
2
w
3
max 4.75 3.94 0.18 20.02 19.96
mm nom
9.53 9.53 1.14 19.94 12.83 1.70 20.70 9.91
8.89
0.51 0.25
0.02 0.01
min 3.45 3.68 0.08 19.61 19.66
9.27 9.27 0.89 18.92 12.57 1.45 20.45 9.65
0.375 0.375 0.045 0.785 0.505 0.067 0.815 0.39
max 0.187 0.155 0.007 0.788 0.786
inches nom
min 0.136 0.145 0.003 0.772 0.774
0.35
0.365 0.365 0.035 0.745 0.495 0.057 0.805 0.38
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
sot1121b_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
09-10-12
09-12-14
SOT1121B
Fig 14. Package outline SOT1121B
BLF7G20LS-140P
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 17 August 2010
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NXP Semiconductors
Power LDMOS transistor
9. Abbreviations
Table 10. Abbreviations
Acronym
CW
Description
Continuous Wave
EDGE
ESD
Enhanced Data rates for GSM Evolution
ElectroStatic Discharge
GSM
Global System for Mobile communications
Interim Standard 95
IS-95
LDMOS
LDMOST
RF
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Radio Frequency
SMD
Surface Mounted Device
VSWR
W-CDMA
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
10. Revision history
Table 11. Revision history
Document ID
Release date Data sheet status
20100817 Product data sheet
Change notice
Supersedes
BLF7G20LS-140P v.2
-
BLF7G20L-140P_
7G20LS-140P v.1
Modifications:
• This document now only describes the BLF7G20LS-140P.
• Table 1 on page 1: changed some values.
• Table 4 on page 2: removed drain current specification.
• Table 6 on page 3: added typical value for gfs.
• Table 7 on page 3: changed some values.
• Section 7.2 on page 4: updated the figures.
• Section 7.3 on page 4: updated the figures.
• Section 7.4 on page 5: updated the figures.
• Section 7.5 on page 6: updated the figures.
BLF7G20L-140P_7G20LS-140P v.1
20100421
Objective data sheet
-
-
BLF7G20LS-140P
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 17 August 2010
10 of 13
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Power LDMOS transistor
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
11.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
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representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
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Applications — Applications that are described herein for any of these
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representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
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11.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
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BLF7G20LS-140P
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Product data sheet
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Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
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own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
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Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
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13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
GSM EDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Single carrier IS-95. . . . . . . . . . . . . . . . . . . . . . 6
Single carrier W-CDMA . . . . . . . . . . . . . . . . . . 7
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Impedance information. . . . . . . . . . . . . . . . . . . 8
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 17 August 2010
Document identifier: BLF7G20LS-140P
相关型号：
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