BLF881S [NXP]
UHF power LDMOS transistor; UHF功率LDMOS晶体管
| 型号： | BLF881S |
| 厂家： | 
NXP |
| 描述： | UHF power LDMOS transistor |
| 文件： | 总18页 (文件大小：279K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF881; BLF881S
UHF power LDMOS transistor
Rev. 02 — 10 February 2010
Product data sheet
1. Product profile
1.1 General description
A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent
ruggedness and broadband performance of this device makes it ideal for digital
transmitter applications.
Table 1.
Typical performance
RF performance at VDS = 50 V in a common-source 860 MHz test circuit.
Mode of operation
f
PL PL(PEP) PL(AV) Gp
ηD IMD3 IMDshldr
(MHz)
(W) (W)
(W)
-
(dB) (%) (dBc) (dBc)
2-tone, class AB
f1 = 860; f2 = 860.1
858
-
-
140
-
21
21
49 −34
34
-
DVB-T (8k OFDM)
33
-
−33[1]
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent
drain current IDq = 0.5 A:
Peak envelope power load power = 140 W
Power gain = 21 dB
Drain efficiency = 49 %
Third order intermodulation distortion = −34 dBc
DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent
drain current IDq = 0.5 A:
Average output power = 33 W
Power gain = 21 dB
Drain efficiency = 34 %
Shoulder distance = −33 dBc (4.3 MHz from center frequency)
Integrated ESD protection
Excellent ruggedness
High power gain
BLF881; BLF881S
NXP Semiconductors
UHF power LDMOS transistor
High efficiency
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
2. Pinning information
Table 2.
Pin
BLF881 (SOT467C)
Pinning
Description
Simplified outline
Graphic symbol
1
2
3
drain
gate
1
1
[1]
source
3
2
3
2
sym112
BLF881S (SOT467B)
1
2
3
drain
gate
1
1
[1]
source
3
2
3
2
sym112
[1] Connected to flange.
3. Ordering information
Table 3.
Type number Package
Name Description
Ordering information
Version
flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C
BLF881
-
-
BLF881S
earless LDMOST ceramic package; 2 leads
SOT467B
BLF881_BLF881S_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 February 2010
2 of 18
BLF881; BLF881S
NXP Semiconductors
UHF power LDMOS transistor
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
-
Max
104
Unit
V
drain-source voltage
gate-source voltage
storage temperature
junction temperature
VGS
Tstg
−0.5
−65
-
+13
+150
200
V
°C
°C
Tj
5. Thermal characteristics
Table 5.
Symbol
Rth(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
Typ Unit
[1]
Tcase = 80 °C;
0.95 K/W
PL(AV) = 70 W
[1] Rth(j-c) is measured under RF conditions.
6. Characteristics
Table 6.
DC characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
V(BR)DSS drain-source breakdown voltage
Conditions
Min
Typ Max Unit
[1]
VGS = 0 V; ID = 1.35 mA
104
-
-
V
[1]
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
VDS = 10 V; ID = 1.35 mA
VGS = 0 V; VDS = 50 V
1.4
-
2.4
1.4
-
V
-
-
μA
A
IDSX
drain cut-off current
VGS = VGSth + 3.75 V; VDS = 10 V
VGS = 10 V; VDS = 0 V
19
-
21
-
IGSS
gate leakage current
140 nA
[1]
RDS(on)
Ciss
drain-source on-state resistance
input capacitance
VGS = VGSth + 3.75 V; ID = 4.5 A
VGS = 0 V; VDS = 50 V; f = 1 MHz
VGS = 0 V; VDS = 50 V; f = 1 MHz
VGS = 0 V; VDS = 50 V; f = 1 MHz
-
210
100
33.5
1
-
-
-
-
mΩ
pF
pF
pF
-
-
-
Coss
output capacitance
Crss
reverse transfer capacitance
[1] ID is the drain current.
Table 7.
RF characteristics
Th = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
2-Tone, class AB
VDS
drain-source voltage
-
50
-
V
IDq
quiescent drain current
peak envelope power load power
power gain
-
0.5
140
21
-
A
PL(PEP)
Gp
-
-
W
dB
%
20
45
-
-
ηD
drain efficiency
49
-
IMD3
BLF881_BLF881S_2
third-order intermodulation distortion
−34
−30
dBc
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 February 2010
3 of 18
BLF881; BLF881S
NXP Semiconductors
UHF power LDMOS transistor
Table 7.
RF characteristics …continued
Th = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
DVB-T (8k OFDM)
VDS
drain-source voltage
-
50
-
V
IDq
quiescent drain current
average output power
power gain
-
0.5
33
-
A
PL(AV)
Gp
-
-
W
20
30
-
21
-
dB
%
ηD
drain efficiency
34
-
[1]
[2]
IMDshldr
PAR
intermodulation distortion shoulder
peak-to-average ratio
−33
8.3
−30
dBc
dB
-
-
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
001aal074
200
C
oss
(pF)
160
120
80
40
0
0
20
40
60
80
V
DS
(V)
VGS = 0 V; f = 1 MHz.
Fig 1. Output capacitance as a function of drain-source voltage; typical values
BLF881_BLF881S_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 February 2010
4 of 18
BLF881; BLF881S
NXP Semiconductors
UHF power LDMOS transistor
7. Application information
7.1 Narrowband RF figures
7.1.1 CW
001aal075
23
70
G
(dB)
η
p
D
(%)
60
G
p
22
21
20
19
18
17
16
50
40
30
20
10
0
η
D
0
40
80
120
160
200
(W)
P
L
VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit.
Fig 2. CW power gain and drain efficiency as function of load power; typical values
7.1.2 2-Tone
0001aal076
001aal077
23
p
70
η
0
G
D
(dB)
(%)
60
G
p
IMD3
(dBc)
22
21
20
19
18
17
16
50
40
30
20
10
0
−20
η
D
−40
−60
0
40
80
120
P
160
(W)
0
40
80
120
P
L(AV)
160
(W)
L(AV)
VDS = 50 V; IDq = 0.5 A; measured in a common-source
narrowband 860 MHz test circuit.
VDS = 50 V; IDq = 0.5 A; measured in a common-source
narrowband 860 MHz test circuit.
Fig 3. 2-Tone power gain and drain efficiency as
function of average load power; typical values
Fig 4. 2-Tone third order intermodulation distortion
as a function of average load power; typical
values
BLF881_BLF881S_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 February 2010
5 of 18
BLF881; BLF881S
NXP Semiconductors
UHF power LDMOS transistor
7.1.3 DVB-T
001aal078
001aal079
23
p
70
0
G
η
D
IMD
shldr
(dBc)
(dB)
(%)
60
G
p
22
−10
−20
−30
−40
−50
21
20
19
18
17
16
50
40
30
20
10
0
η
D
(1)
(2)
0
30
60
90
0
30
60
90
P
L(AV)
(W)
P
(W)
L(AV)
VDS = 50 V; IDq = 0.5 A; measured in a common-source
narrowband 860 MHz test circuit.
VDS = 50 V; IDq = 0.5 A; measured in a common-source
narrowband 860 MHz test circuit.
(1) Lower adjacent channel
(2) Upper adjacent channel
Fig 5. DVB-T power gain and drain efficiency as
function of average load power; typical values
Fig 6. DVB-T shoulder distance as a function of
average load power; typical values
BLF881_BLF881S_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 February 2010
6 of 18
BLF881; BLF881S
NXP Semiconductors
UHF power LDMOS transistor
7.2 Broadband RF figures
7.2.1 DVB-T
001aal080
001aal081
9.0
50
25
0
G
IMD
shdr
p
(dB)
(dBc)
PAR
(dB)
η
D
(%)
23
−10
−20
−30
−40
−50
PAR
8.0
40
21
19
17
15
G
p
η
D
IMD
shdr
7.0
30
20
6.0
400
500
600
700
800
900
f (MHz)
400
500
600
700
800
900
f (MHz)
VDS = 50 V; IDq = 0.35 A; PL(AV) = 33 W; measured in a
common-source broadband test circuit as described in
Section 8.
VDS = 50 V; IDq = 0.35 A; PL(AV) = 33 W; measured in a
common-source broadband test circuit as described in
Section 8.
Fig 7. DVB-T PAR at 0.01 % probability on the CCDF
and drain efficiency as function of frequency;
typical values
Fig 8. DVB-T power gain and shoulder distance as
function of frequency; typical values
7.3 Ruggedness in class-AB operation
The BLF881 and BLF881S are capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V;
f = 860 MHz at rated power. Ruggedness is measured in the application circuit as
described in Section 8.
BLF881_BLF881S_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 February 2010
7 of 18
BLF881; BLF881S
NXP Semiconductors
UHF power LDMOS transistor
7.4 Reliability
001aal082
6
5
4
3
2
10
Years
10
10
10
10
(1) (2) (3) (4) (5) (6)
10
1
(7) (8) (9) (10) (11)
0
2
4
6
I
(A)
DS(DC)
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1 / δ.
(1) Tj = 100 °C
(2) Tj = 110 °C
(3) Tj = 120 °C
(4) Tj = 130 °C
(5) Tj = 140 °C
(6) Tj = 150 °C
(7) Tj = 160 °C
(8) Tj = 170 °C
(9) Tj = 180 °C
(10) Tj = 190 °C
(11) Tj = 200 °C
Fig 9. BLF881 electromigration
BLF881_BLF881S_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 February 2010
8 of 18
BLF881; BLF881S
NXP Semiconductors
UHF power LDMOS transistor
8. Test information
Table 8.
List of components
For test circuit, see Figure 10, Figure 11 and Figure 12.
Component
C1, C2
C3, C4
C5
Description
Value
5.1 pF
10 pF
6.8 pF
4.7 pF
2.7 pF
100 pF
Remarks
[1]
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
[2]
[1]
[1]
[1]
[1]
C6
C7
C8, C9, C10, C25, multilayer ceramic chip capacitor
C26
C11, C27
multilayer ceramic chip capacitor
10 μF
TDK C570X7R1H106KT000N or
capacitor of same quality.
C12
C20
C21
C22
C23
C24
L1
electrolytic capacitor
470 μF; 63 V
[3]
[3]
multilayer ceramic chip capacitor
10 pF
multilayer ceramic chip capacitor
8.2 pF
trimmer
0.6 pF to 4.5 pF
Tekelec
[3]
multilayer ceramic chip capacitor
6.8 pF
[3]
multilayer ceramic chip capacitor
3.9 pF
[4]
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
resistor
resistor
-
(W × L) 7 mm × 15 mm
[4]
L2
-
(W × L) 2.4 mm × 9 mm
[4]
L3
-
(W × L) 2.4 mm × 10 mm
[4]
L4
-
(W × L) 2.4 mm × 25 mm
[4]
L5
-
(W × L) 2.4 mm × 10 mm
[4]
L6
-
(W × L) 2.0 mm × 20 mm
[4]
L7
-
(W × L) 2.0 mm × 21 mm
[4]
L20
L21
L22
L23
R1
-
(W × L) 7 mm × 12 mm
[4]
-
(W × L) 2.4 mm × 13 mm
[4]
-
(W × L) 2.4 mm × 31 mm
[4]
-
(W × L) 2.4 mm × 5 mm
100 Ω
10 kΩ
R2
[1] American technical ceramics type 100B or capacitor of same quality.
[2] American technical ceramics type 180R or capacitor of same quality.
[3] American technical ceramics type 100A or capacitor of same quality.
[4] Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);
thickness copper plating = 35 μm.
BLF881_BLF881S_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 February 2010
9 of 18
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V
GG
R2
C11
C12
C27
V
DD
C26
C9
C1
R1
L6
C20
C3
C4
L23
50 Ω C25
C8
50 Ω
L22
L21
L20
L1
L2
L3
L4
L5
C24
C23 C22
C21
C2
C5
C6
C7
L7
C10
001aaj288
See Table 8 for a list of components.
Fig 10. Class-AB common-source broadband amplifier
BLF881; BLF881S
NXP Semiconductors
UHF power LDMOS transistor
76.2 mm
40 mm
40 mm
001aaj289
Fig 11. Printed-Circuit Board (PCB) for class-AB common source amplifier
BLF881_BLF881S_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 February 2010
11 of 18
BLF881; BLF881S
NXP Semiconductors
UHF power LDMOS transistor
R2
C11
C9
C12
C27
L6
C26
R1
C3
C1
C20
C21
L23
C25
C22
L20
L1
L2
L21
C23
C24
C5
C2
C4
C8
L3
L5
L7
C6
L23
C7
C10
L4
001aaj290
See Table 8 for a list of components.
Fig 12. Component layout for class-AB common source amplifier
BLF881_BLF881S_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 February 2010
12 of 18
BLF881; BLF881S
NXP Semiconductors
UHF power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT467C
D
A
F
B
3
D
1
U
1
q
C
c
1
E
1
H
U
E
2
A
w
p
M
M
M
B
A
1
2
Q
w
M
M
C
b
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
A
b
c
D
D
E
E
F
H
p
Q
q
U
U
w
w
2
1
1
1
2
1
4.67
3.94
3.43 2.21
3.18 1.96
20.45 5.97
20.19 5.72
5.59 0.15
5.33 0.10
9.25
9.04
9.27
9.02
5.92
5.77
5.97 1.65 18.54
5.72 1.40 17.02
14.27
0.562
0.25
0.51
0.135 0.087
0.125 0.077
0.805 0.235
0.795 0.225
0.184 0.220 0.006 0.364 0.365 0.233 0.235 0.065 0.73
0.155 0.210 0.004 0.356 0.355 0.227 0.225 0.055 0.67
inch
0.010 0.020
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
99-12-06
99-12-28
SOT467C
Fig 13. Package outline SOT467C
BLF881_BLF881S_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 February 2010
13 of 18
BLF881; BLF881S
NXP Semiconductors
UHF power LDMOS transistor
Earless LDMOST ceramic package; 2 leads
SOT467B
D
3
A
F
D
1
D
U
c
1
1
L
E
1
U
2
H
E
2
b
w
5
A
Q
2
0
10 mm
scale
Dimensions
(1)
Unit
A
b
c
D
D
1
E
E
F
H
L
Q
U
1
U
2
w
2
1
max 4.67 5.59 0.15 9.25 9.27 5.92 5.97 1.65 18.29 2.92 2.21 9.78 5.97
mm nom
0.25
0.01
min 3.94 5.33 0.10 9.04 9.02 5.77 5.72 1.40 17.27 2.16 1.96 9.53 5.72
max 0.184 0.22 0.006 0.364 0.365 0.233 0.235 0.065 0.72 0.115 0.087 0.385 0.235
inches nom
min 0.155 0.21 0.004 0.356 0.355 0.227 0.225 0.055 0.68 0.085 0.077 0.375 0.225
Note
1. millimeter dimensions are derived from the original inch dimensions.
sot467b_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
08-12-09
09-10-27
SOT467B
Fig 14. Package outline SOT467B
BLF881_BLF881S_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 February 2010
14 of 18
BLF881; BLF881S
NXP Semiconductors
UHF power LDMOS transistor
10. Abbreviations
Table 9.
Abbreviations
Acronym
CW
Description
Continuous Wave
CCDF
DVB
Complementary Cumulative Distribution Function
Digital Video Broadcast
DVB-T
ESD
Digital Video Broadcast - Terrestrial
ElectroStatic Discharge
HF
High Frequency
IMD3
LDMOS
LDMOST
OFDM
PAR
Third order InterModulation Distortion
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Orthogonal Frequency Division Multiplexing
Peak-to-Average power Ratio
Peak Envelope Power
PEP
RF
Radio Frequency
TTF
Time To Failure
UHF
Ultra High Frequency
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 10. Revision history
Document ID
Release date
20100210
Data sheet status
Product data sheet
Change notice
Supersedes
BLF881_BLF881S_2
Modifications:
-
BLF881_BLF881S_1
• The status of this document has been changed to “Product data sheet”.
BLF881_BLF881S_1
20091210
Preliminary data sheet
-
-
BLF881_BLF881S_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 February 2010
15 of 18
BLF881; BLF881S
NXP Semiconductors
UHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
12.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
12.3 Disclaimers
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Non-automotive qualified products — Unless the data sheet of an NXP
Semiconductors product expressly states that the product is automotive
qualified, the product is not suitable for automotive use. It is neither qualified
nor tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 February 2010
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NXP Semiconductors
UHF power LDMOS transistor
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLF881_BLF881S_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 February 2010
17 of 18
BLF881; BLF881S
NXP Semiconductors
UHF power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
7.1
Application information. . . . . . . . . . . . . . . . . . . 5
Narrowband RF figures . . . . . . . . . . . . . . . . . . 5
CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
DVB-T. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Broadband RF figures . . . . . . . . . . . . . . . . . . . 7
DVB-T. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Ruggedness in class-AB operation . . . . . . . . . 7
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
7.1.1
7.1.2
7.1.3
7.2
7.2.1
7.3
7.4
8
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 15
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 16
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 17
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 10 February 2010
Document identifier: BLF881_BLF881S_2
相关型号：
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