BLF8G19LS-170BVX [NXP]
BLF8G19LS-170BV;
| 型号： | BLF8G19LS-170BVX |
| 厂家： | 
NXP |
| 描述： | BLF8G19LS-170BV |
| 文件： | 总13页 (文件大小：373K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF8G19LS-170BV
Power LDMOS transistor
Rev. 2 — 28 March 2013
Product data sheet
1. Product profile
1.1 General description
170 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 1800 MHz to 1990 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS
(V)
32
PL(AV)
(W)
60
Gp
D
ACPR
(MHz)
(mA)
1300
1300
(dB)
18.0
19.8
(%) (dBc)
2-carrier W-CDMA [1]
1-carrier W-CDMA [2]
1930 to 1990
1805 to 1880
32
29
31
40
28
33
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
[2] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Decoupling leads to enable improved video bandwidth (100 MHz typical)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Integrated current sense
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifier for W-CDMA base stations and multi carrier applications in the
1800 MHz to 1990 MHz frequency range
BLF8G19LS-170BV
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
drain
Simplified outline
Graphic symbol
1
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ꢅ
4
5
2
gate
[1]
3
source
3
ꢈ
ꢆ
4,5
6
video decoupling
sense gate
sense drain
ꢇ
ꢀꢀꢀꢁꢂꢂꢃꢄꢅꢆ
6
7
2
7
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLF8G19LS-170BV
-
earless flanged LDMOST ceramic package; 6 leads
SOT1120B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
65
Unit
V
drain-source voltage
gate-source voltage
-
VGS
0.5 +13
0.5 +9
V
VGS(sense) sense gate-source voltage
V
Tstg
Tj
storage temperature
junction temperature
65
+150 C
[1]
-
225
C
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Thermal characteristics
Table 5.
Symbol Parameter
Rth(j-c) thermal resistance from junction to case
Thermal characteristics
Conditions
Typ
Unit
Tcase = 80 C; PL = 55 W
0.27
K/W
BLF8G19LS-170BV
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© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 28 March 2013
2 of 13
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NXP Semiconductors
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.16 mA
65
1.5
-
-
-
V
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
VDS = 10 V; ID = 216 mA
VGS = 0 V; VDS = 28 V
1.9
-
2.3
4.5
-
V
A
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
-
40
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 10.8 A
-
-
-
-
450 nA
forward transconductance
16
0.06
-
-
S
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 7.56 A
IDq
quiescent drain current
main transistor:
DS = 32 V
sense transistor:
DS = 23.4 mA;
VDS = 30.4 V
1175 1300 1425 mA
V
I
Table 7.
RF characteristics
Test signal: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test model 1; 64
DPCH; f1 = 1937.5 MHz; f2 = 1962.5 MHz; f3 = 1982.5 MHz; f4 = 1987.5 MHz; RF performance at
VDS = 32 V; IDq = 1300 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test
circuit.
Symbol
Gp
Parameter
Conditions
Min Typ
Max Unit
power gain
PL(AV) = 60 W
PL(AV) = 60 W
PL(AV) = 60 W
PL(AV) = 60 W
17.3 18.0 20.2 dB
RLin
D
input return loss
drain efficiency
-
13
32
7
-
dB
%
28
-
ACPR5M adjacent channel power ratio (5 MHz)
31
28
dBc
7. Test information
7.1 Ruggedness in class-AB operation
The BLF8G19LS-170BV is capable to withstand a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V;
IDq = 1300 mA; PL = 214 W (CW); f = 1930 MHz and also under the following conditions:
V
DS = 28 V; IDq = 1300 mA; PL = 170 W (CW); f = 1805 MHz.
BLF8G19LS-170BV
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© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 28 March 2013
3 of 13
BLF8G19LS-170BV
NXP Semiconductors
Power LDMOS transistor
7.2 Impedance information
Table 8.
Typical impedance
IDq = 1300 mA; main transistor VDS = 32 V.
[1]
[1]
f
ZS
ZL
(MHz)
1930
1960
1990
()
()
1.8 j3.4
1.8 j3.4
1.9 j4.0
1.1 j2.8
1.1 j2.8
1.0 j2.8
[1] ZS and ZL defined in Figure 1.
drain
Z
L
gate
Z
S
001aaf059
Fig 1. Definition of transistor impedance
7.3 VBW in class-AB operation
The BLF8G19LS-170BV shows 100 MHz (typical) video bandwidth in a class-AB test
circuit in the 1900 MHz band at VDS = 32 V and IDq = 1.3 A.
BLF8G19LS-170BV
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 28 March 2013
4 of 13
BLF8G19LS-170BV
NXP Semiconductors
Power LDMOS transistor
7.4 Test circuit
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Printed-Circuit Board (PCB): Taconic RF35; r = 3.5; thickness = 0.765 mm;
thickness copper plating = 35 m.
See Table 9 for a list of components.
Fig 2. Component layout for class-AB production test circuit
Table 9.
List of components
For test circuit see Figure 2.
Component
Description
Value
Remarks
ATC100B
ATC100B
ATC100B
ATC100B
Murata
[1]
[1]
[1]
[1]
[2]
[2]
[2]
C1, C2, C3, C4, C5
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
10 pF
C6, C8
C7
0.1 pF
0.2 pF
C9, C10
C11, C16, C17
C12, C13
C14, C15
C18
120 pF
4.7 F, 50 V
10 F, 50 V
1 F, 50 V
470 F, 63 V
4.7
Murata
Murata
R1
SMD resistor
Philips 1206
Philips 1206
Philips 1206
Philips 1206
Philips 1206
R2
SMD resistor
470
R3
SMD resistor
820
R4
SMD resistor
12
R5
SMD resistor
2200
[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] Murata or capacitor of same quality.
BLF8G19LS-170BV
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© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 28 March 2013
5 of 13
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Power LDMOS transistor
7.5 Graphs
7.5.1 CW pulse
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VDS = 32 V; IDq = 1300 mA; tp = 100 s; = 10 %.
VDS = 32 V; IDq = 1300 mA; tp = 100 s; = 10 %.
(1) f = 1935 MHz
(2) f = 1960 MHz
(3) f = 1985 MHz
(1) f = 1935 MHz
(2) f = 1960 MHz
(3) f = 1985 MHz
Fig 3. Power gain and drain efficiency as function of
output power; typical values
Fig 4. Input return loss as a function of
output power; typical values
BLF8G19LS-170BV
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© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 28 March 2013
6 of 13
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Power LDMOS transistor
7.5.2 2-Carrier W-CDMA
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VDS = 32 V; IDq = 1300 mA.
VDS = 32 V; VGS = 32 V
(1) f = 1935 MHz
(2) f = 1960 MHz
(3) f = 1985 MHz
(1) f = 1935 MHz
(2) f = 1960 MHz
(3) f = 1985 MHz
Fig 5. Power gain and drain efficiency as function of
output power; typical values
Fig 6. Adjacent channel power ratio (5 MHz) and
adjacent channel power ratio (10 MHz) as
function of output power; typical values
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VDS = 32 V; IDq = 1300 mA.
(1) f = 1935 MHz
(2) f = 1960 MHz
(3) f = 1985 MHz
Fig 7. Peak-to-average power ratio as a function of output power; typical values
BLF8G19LS-170BV
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© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 28 March 2013
7 of 13
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NXP Semiconductors
Power LDMOS transistor
7.5.3 2-Tone VBW
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VDS = 32 V; IDq = 1300 mA; fc = 1960 MHz.
(1) low frequency component
(2) high frequency component
Fig 8. VBW capability in class-AB test circuit
BLF8G19LS-170BV
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© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 28 March 2013
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Power LDMOS transistor
8. Package outline
Earless flanged LDMOST ceramic package; 6 leads
SOT1120B
D
A
F
3
D
D
L
1
1
c
U
1
4
5
y
α
Z
1
U
E
1
H
Z
2
Z
E
2
6
b
7
2
Q
b
w
D
1
2
0
5
10 mm
scale
Dimensions
(1)
(2)
Q
Unit
A
b
b
c
D
D
1
E
E
1
F
H
L
U
1
U
w
2
y
Z
Z
1
Z
2
α
1
2
0.15
max 4.75 1.83 12.83 0.18 20.02 19.96 9.53 9.53 1.14 19.94 3.56 1.70 20.70 9.91
4.60 9.53 15.52 64°
mm nom
0.51
0.02
min 3.45 1.57 12.57 0.10 19.61 19.66 9.27 9.25 0.89 18.92 3.30 1.45 20.45 9.65
max 0.187 0.072 0.505 0.007 0.788 0.786 0.375 0.375 0.045 0.785 0.140 0.067 0.815 0.39
inches nom
min 0.136 0.062 0.495 0.004 0.772 0.774 0.365 0.364 0.035 0.745 0.130 0.057 0.805 0.38
4.32 8.71 14.50 60°
0.181 0.375 0.611 64°
0.0059
0.170 0.343 0.571 60°
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
sot1120b_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
12-04-11
12-06-14
SOT1120B
Fig 9. Package outline SOT1120B
BLF8G19LS-170BV
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© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 28 March 2013
9 of 13
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NXP Semiconductors
Power LDMOS transistor
9. Abbreviations
Table 10. Abbreviations
Acronym
3GPP
CCDF
CW
Description
3rd Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
DPCH
ESD
Dedicated Physical CHannel
ElectroStatic Discharge
LDMOS
LDMOST
MTF
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Median Time to Failure
PAR
Peak-to-Average Ratio
VBW
Video BandWidth
VSWR
W-CDMA
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
10. Revision history
Table 11. Revision history
Document ID
Release date
20130328
Data sheet status
Change notice
Supersedes
BLF8G19LS-170BV v.2
Modifications:
Product data sheet
-
BLF8G19LS-170BV v.1
• The status of this document has been changed to Product data sheet.
20130108 Preliminary data sheet
BLF8G19LS-170BV v.1
-
-
BLF8G19LS-170BV
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© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 28 March 2013
10 of 13
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Power LDMOS transistor
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
11.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
11.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
BLF8G19LS-170BV
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 28 March 2013
11 of 13
BLF8G19LS-170BV
NXP Semiconductors
Power LDMOS transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLF8G19LS-170BV
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 28 March 2013
12 of 13
BLF8G19LS-170BV
NXP Semiconductors
Power LDMOS transistor
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
7.1
7.2
7.3
7.4
7.5
7.5.1
7.5.2
7.5.3
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Impedance information. . . . . . . . . . . . . . . . . . . 4
VBW in class-AB operation . . . . . . . . . . . . . . . 4
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
CW pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 7
2-Tone VBW . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 28 March 2013
Document identifier: BLF8G19LS-170BV
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