BLP25M710F [NXP]

BLP25M710;
BLP25M710F
型号: BLP25M710F
厂家: NXP    NXP
描述:

BLP25M710

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BLP25M710  
Broadband LDMOS driver transistor  
Rev. 1 — 29 August 2013  
Product data sheet  
1. Product profile  
1.1 General description  
A 10 W LDMOS power transistor for broadcast and industrial applications in the  
HF to 2500 MHz band.  
Table 1.  
Application information  
Test signal  
f
IDq  
VDS  
(V)  
28  
PL  
(W)  
1
Gp  
D  
IMDshldr  
(dBc)  
47.5 [1]  
-
PAR  
(dB)  
9.5 [2]  
-
(MHz)  
858  
2450  
(mA)  
110  
80  
(dB)  
20.9  
16.2  
(%)  
17.1  
64.5  
DVB-T  
Pulsed RF [3]  
28  
10  
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.  
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on  
CCDF.  
[3] Measured at = 10 %, tp = 12 s.  
1.2 Features and benefits  
Easy power control  
Integrated ESD protection  
Excellent ruggedness  
High efficiency  
Excellent thermal stability  
Designed for broadband operation (HF to 2500 MHz)  
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances  
(RoHS)  
1.3 Applications  
Industrial, scientific and medical applications  
Broadcast transmitter applications  
 
 
 
 
 
 
 
BLP25M710  
NXP Semiconductors  
Broadband LDMOS driver transistor  
2. Pinning information  
Table 2.  
Pin  
Pinning  
Description  
n.c.  
Simplified outline  
Graphic symbol  
1, 6, 7, 12  
2, 3  
ꢁꢂ  
ꢁꢉꢆꢀꢁ  
gate1  
4, 5  
gate2  
ꢂꢆꢀꢅ  
ꢁꢅ  
ꢇꢆꢀꢈ  
8, 9  
drain2  
drain1  
source  
10, 11  
13  
[1]  
7UDQVSDUHQWꢀWRSꢀYLHZ  
ꢊꢆꢀꢋ  
DDDꢀꢁꢁꢂꢃꢄꢅ  
[1] Connected to flange.  
3. Ordering information  
Table 3.  
Ordering information  
Type number Package  
Name  
Description  
Version  
BLP25M710  
HVSON12 plastic thermal enhanced very thin small outline  
package; no leads; 12 terminals; body 6 4 0.85 mm  
SOT1179-2  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Max  
Unit  
V
drain-source voltage  
gate-source voltage  
storage temperature  
junction temperature  
-
65  
VGS  
Tstg  
0.5 +13  
V
65  
+150 C  
Tj  
-
150  
C  
BLP25M710  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 1 — 29 August 2013  
2 of 9  
 
 
 
 
BLP25M710  
NXP Semiconductors  
Broadband LDMOS driver transistor  
5. Recommended operating conditions  
See application note AN11198 for more details.  
DDDꢀꢁꢁꢆꢂꢁꢅ  
ꢁꢈꢉ  
77  
FDVH  
ꢌƒ&ꢍ  
ꢁꢅꢉ  
ꢁꢁꢉ  
ꢋꢉ  
ꢃꢉ  
ꢈꢉ  
ꢁꢉ  
3ꢀꢌ:ꢍ  
Fig 1. Recommended operating area; case temperature as a function of power  
dissipation  
6. Thermal characteristics  
Table 5.  
Thermal characteristics  
Symbol Parameter  
Conditions  
Typ  
Unit  
Rth(j-c)  
thermal resistance from junction to case Tcase = 70 C; PL = 2 W  
3.2  
K/W  
7. Characteristics  
Table 6.  
DC characteristics  
Tj = 25 C; unless otherwise specified.  
Symbol Parameter  
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.18 mA  
Conditions  
Min Typ  
65  
Max Unit  
-
-
V
V
VGS(th)  
IDSS  
IDSX  
IGSS  
gfs  
gate-source threshold voltage  
drain leakage current  
VDS = 10 V; ID = 18 mA  
VGS = 0 V; VDS = 28 V  
VGS = VGS(th) + 3.75 V  
VGS = 11 V; VDS = 0 V  
VDS = 10 V; ID = 18 mA  
1.5 1.9  
2.3  
1.4 -  
+1.4 A  
drain cut-off current  
-
-
-
-
3.2  
-
-
A
gate leakage current  
140 nA  
forward transconductance  
160  
1000  
-
-
mS  
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;  
VDS = 10 V; ID = 630 mA  
m  
BLP25M710  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 1 — 29 August 2013  
3 of 9  
 
 
BLP25M710  
NXP Semiconductors  
Broadband LDMOS driver transistor  
Table 7.  
Test signal: 1-tone pulsed; tp = 50 s; = 10 %; f = 2140 MHz; RF performance at VDS = 28 V;  
Dq = 110 mA; Tcase = 25 C; unless otherwise specified, in a production circuit.  
RF characteristics  
I
Symbol Parameter  
Conditions  
PL(AV) = 2 W  
PL(AV) = 2 W  
Min Typ Max Unit  
Gp  
power gain  
15  
20  
11  
-
16  
23  
-
-
-
-
dB  
%
D  
drain efficiency  
PL(1dB)  
RLin  
output power at 1 dB gain compression  
input return loss  
W
PL(AV) = 2 W  
16 12 dB  
8. Test information  
8.1 Ruggedness in class-AB operation  
The BLP25M710 is capable of withstanding a load mismatch corresponding to  
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;  
IDq = 110 mA; PL = 10 W (CW).  
BLP25M710  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 1 — 29 August 2013  
4 of 9  
 
 
BLP25M710  
NXP Semiconductors  
Broadband LDMOS driver transistor  
9. Package outline  
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PP  
ꢉꢏꢂ  
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1RWH  
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ꢁꢅꢎꢉꢃꢎꢁꢄ  
627ꢁꢁꢃꢋꢎꢂ  
02ꢎꢂꢂꢋ  
Fig 2. Package outline SOT1179-2 (HVSON12)  
BLP25M710  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 1 — 29 August 2013  
5 of 9  
 
BLP25M710  
NXP Semiconductors  
Broadband LDMOS driver transistor  
10. Handling information  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling  
electrostatic sensitive devices.  
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or  
equivalent standards.  
11. Abbreviations  
Table 8.  
Acronym  
Abbreviations  
Description  
CCDF  
CW  
Complementary Cumulative Distribution Function  
Continuous Wave  
DVB-T  
ESD  
Digital Video Broadcast - Terrestrial  
ElectroStatic Discharge  
HF  
High Frequency  
LDMOS  
PAR  
Laterally Diffused Metal-Oxide Semiconductor  
Peak-to-Average Ratio  
VSWR  
Voltage Standing-Wave Ratio  
12. Revision history  
Table 9.  
Revision history  
Document ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
BLP25M710 v.1  
20130829  
Product data sheet  
-
-
BLP25M710  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 1 — 29 August 2013  
6 of 9  
 
 
 
BLP25M710  
NXP Semiconductors  
Broadband LDMOS driver transistor  
13. Legal information  
13.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
Suitability for use — NXP Semiconductors products are not designed,  
13.2 Definitions  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors and its suppliers accept no liability for  
inclusion and/or use of NXP Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at the customer’s own  
risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
13.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. NXP Semiconductors takes no  
responsibility for the content in this document if provided by an information  
source outside of NXP Semiconductors.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
BLP25M710  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 1 — 29 August 2013  
7 of 9  
 
 
 
 
 
 
 
BLP25M710  
NXP Semiconductors  
Broadband LDMOS driver transistor  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific NXP Semiconductors product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor tested  
in accordance with automotive testing or application requirements. NXP  
Semiconductors accepts no liability for inclusion and/or use of  
13.4 Licenses  
ICs with DVB-T or DVB-T2 functionality  
non-automotive qualified products in automotive equipment or applications.  
Use of this product in any manner that complies with the DVB-T or the  
DVB-T2 standard may require licenses under applicable patents of the  
DVB-T respectively the DVB-T2 patent portfolio, which license is available  
from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under  
applicable patents of other parties.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without NXP Semiconductors’ warranty of the  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
NXP Semiconductors’ specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies NXP Semiconductors for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond NXP Semiconductors’  
standard warranty and NXP Semiconductors’ product specifications.  
13.5 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
14. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
BLP25M710  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 1 — 29 August 2013  
8 of 9  
 
 
 
BLP25M710  
NXP Semiconductors  
Broadband LDMOS driver transistor  
15. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Recommended operating conditions. . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 4  
Ruggedness in class-AB operation . . . . . . . . . 4  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Handling information. . . . . . . . . . . . . . . . . . . . . 6  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 6  
3
4
5
6
7
8
8.1  
9
10  
11  
12  
13  
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 7  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 7  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
13.1  
13.2  
13.3  
13.4  
13.5  
14  
15  
Contact information. . . . . . . . . . . . . . . . . . . . . . 8  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2013.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 29 August 2013  
Document identifier: BLP25M710  
 

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SI9137LG

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9122E

500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

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