BLS6G3135S-120 [NXP]
LDMOS S-Band radar power transistor; LDMOS S波段雷达功率晶体管
| 型号： | BLS6G3135S-120 |
| 厂家： | 
NXP |
| 描述： | LDMOS S-Band radar power transistor |
| 文件： | 总11页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLS6G3135-120;
BLS6G3135S-120
LDMOS S-Band radar power transistor
Rev. 01 — 14 August 2007
Preliminary data sheet
1. Product profile
1.1 General description
120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz
range.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation
f
VDS
(V)
PL
Gp
(dB) (%)
11 43
ηD
tr
tf
(GHz)
(W)
120
(ns)
20
(ns)
6
pulsed RF
3.1 to 3.5 32
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage
of 32 V, an IDq of 100 mA, a tp of up to 300 µs with δ of 10 %:
N Output power = 120 W
N Gain = 11 dB
N Efficiency = 43 %
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (3.1 GHz to 3.5 GHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
BLS6G3135-120; BLS6G3135S-120
NXP Semiconductors
LDMOS S-Band radar power transistor
1.3 Applications
I S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency
range
2. Pinning information
Table 2.
Pin
BLS6G3135-120 (SOT502A)
Pinning
Description
Simplified outline
Symbol
1
2
3
drain
gate
1
3
1
3
2
[1]
source
2
sym112
BLS6G3135S-120 (SOT502B)
1
2
3
drain
gate
1
1
3
2
[1]
source
2
3
sym112
[1] Connected to flange
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
BLS6G3135-120
flanged LDMOST ceramic package; 2 mounting holes; SOT502A
2 leads
BLS6G3135S-120 -
earless flanged LDMOST ceramic package; 2 leads
SOT502B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Min
Max
60
Unit
V
drain-source voltage
gate-source voltage
drain current
-
−0.5
+13
7.2
V
-
A
Tstg
Tj
storage temperature
junction temperature
−65
+150
225
°C
°C
-
BLS6G3135-120_6G3135S-120_1
© NXP B.V. 2007. All rights reserved.
Preliminary data sheet
Rev. 01 — 14 August 2007
2 of 11
BLS6G3135-120; BLS6G3135S-120
NXP Semiconductors
LDMOS S-Band radar power transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ Max Unit
Zth(j-mb) transient thermal impedance from
junction to mounting base
Tcase = 85 °C; PL = 120 W
tp = 300 µs; δ = 10 %
tp = 100 µs; δ = 20 %
0.29 0.40 K/W
0.30 0.41 K/W
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.5 mA
60
-
-
V
VGS(th)
gate-source threshold voltage VDS = 10 V;
1.4
1.8
2.3
V
ID = 180 mA
IDSS
IDSX
drain leakage current
drain cut-off current
VGS = 0 V; VDS = 28 V
-
-
5
-
µA
VGS = VGS(th) + 3.75 V;
27
33
A
VDS = 10 V
IGSS
gfs
gate leakage current
VGS = 8.3 V; VDS = 0 V
VDS = 10 V; ID = 9 A
-
-
-
-
450
-
nA
S
forward transconductance
13
RDS(on) drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 6.3 A
0.085 0.160
Ω
7. Application information
Table 7.
Mode of operation: pulsed RF; tp = 300 µs; δ = 10 %; RF performance at VDS = 32 V; IDq = 100 mA;
case = 25 °C; unless otherwise specified, in a class-AB production circuit.
Application information
T
Symbol Parameter
Conditions
Min Typ Max Unit
PL
output power
-
-
120
-
-
W
V
VCC
Gp
supply voltage
power gain
PL = 120 W
PL = 120 W
PL = 120 W
PL = 120 W
PL = 120 W
PL = 120 W
PL = 120 W
32
-
9.5 11
dB
dB
W
%
IRL
PL(1dB)
ηD
input return loss
output power at 1 dB gain compression
drain efficiency
rise time
6
-
10
130
43
20
6
-
-
39
-
-
tr
50
50
ns
ns
tf
fall time
-
BLS6G3135-120_6G3135S-120_1
© NXP B.V. 2007. All rights reserved.
Preliminary data sheet
Rev. 01 — 14 August 2007
3 of 11
BLS6G3135-120; BLS6G3135S-120
NXP Semiconductors
LDMOS S-Band radar power transistor
Table 8.
Typical impedance
f
ZS
ZL
GHz
3.1
3.2
3.3
3.4
3.5
Ω
Ω
2.7 − j5.4
3.3 − j4.7
4.2 − j4.4
5.2 − j4.8
5.7 − j6.2
5.9 − j5.9
4.5 − j6.2
3.5 − j6.0
2.7 − j5.6
2.0 − j5.2
drain
Z
L
gate
Z
S
001aaf059
Fig 1. Definition of transistor impedance
7.1 Ruggedness in class-AB operation
The BLS6G3135-120 and BLS6G3135S-120 are capable of withstanding a load
mismatch corresponding to VSWR = 5 : 1 through all phases under the following
conditions: VDS = 32 V; IDq = 100 mA; PL = 120 W; tp = 300 µs; δ = 10 %.
001aag823
001aag824
13
50
14
G
(dB)
η
D
(%)
p
η
D
G
p
(dB)
11
40
(2)
(3)
G
p
(1)
10
9
7
5
3
30
20
10
0
6
2
3
3.2
3.4
3.6
0
40
80
120
160
f (GHz)
P (W)
L
VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %;
PL = 120 W.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %.
Fig 2. Power gain and drain efficiency as functions of
frequency; typical values
Fig 3. Power gain as a function of load power; typical
values
BLS6G3135-120_6G3135S-120_1
© NXP B.V. 2007. All rights reserved.
Preliminary data sheet
Rev. 01 — 14 August 2007
4 of 11
BLS6G3135-120; BLS6G3135S-120
NXP Semiconductors
LDMOS S-Band radar power transistor
001aag825
(1)
001aag826
(3)
50
160
(2)
(1)
η
D
(%)
P
L
(2)
(W)
40
120
(3)
30
20
10
0
80
40
0
0
40
80
120
160
0
5
10
15
20
P
(W)
P (W)
i
L
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %.
VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %.
Fig 4. Drain efficiency as a function of load power;
typical values
Fig 5. Load power as a function of input power;
typical values
001aag827
001aag828
13
50
14
G
(dB)
η
D
(%)
p
η
D
G
(dB)
p
(2)
(3)
11
40
G
p
(1)
10
9
7
5
3
30
20
10
0
6
2
3
3.2
3.4
3.6
0
40
80
120
160
f (GHz)
P (W)
L
VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %;
PL = 120 W.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %.
Fig 6. Power gain and drain efficiency as functions of
frequency; typical values
Fig 7. Power gain as a function of load power; typical
values
BLS6G3135-120_6G3135S-120_1
© NXP B.V. 2007. All rights reserved.
Preliminary data sheet
Rev. 01 — 14 August 2007
5 of 11
BLS6G3135-120; BLS6G3135S-120
NXP Semiconductors
LDMOS S-Band radar power transistor
001aag829
(1)
001aag830
50
160
η
D
(%)
P
(2)
L
(2)
(W)
(3)
(1)
40
(3)
120
30
20
10
0
80
40
0
0
40
80
120
160
0
5
10
15
20
P
(W)
P (W)
i
L
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %.
VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %.
Fig 8. Drain efficiency as a function of load power;
typical values
Fig 9. Load power as a function of input power;
typical values
BLS6G3135-120_6G3135S-120_1
© NXP B.V. 2007. All rights reserved.
Preliminary data sheet
Rev. 01 — 14 August 2007
6 of 11
BLS6G3135-120; BLS6G3135S-120
NXP Semiconductors
LDMOS S-Band radar power transistor
8. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D
1
U
1
B
q
c
C
1
L
p
E
E
H
U
1
2
w
M
M
M
B
A
1
A
2
w
5
b
M
M
C
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
UNIT
1
1
1
2
1
12.83
12.57
3.38
3.12
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
34.16 9.91
33.91 9.65
0.15
0.08
27.94
1.100
0.25
0.01
0.51
0.02
mm
0.505
0.495
0.133 0.067
0.123 0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
1.345 0.390
1.335 0.380
0.006
0.003
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-12-28
03-01-10
SOT502A
Fig 10. Package outline SOT502A
BLS6G3135-120_6G3135S-120_1
© NXP B.V. 2007. All rights reserved.
Preliminary data sheet
Rev. 01 — 14 August 2007
7 of 11
BLS6G3135-120; BLS6G3135S-120
NXP Semiconductors
LDMOS S-Band radar power transistor
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D
1
c
U
1
1
L
E
E
H
U
1
2
2
w
5
b
M
M
D
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
Q
U
U
w
UNIT
1
1
1
2
2
12.83
12.57
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
20.70 9.91
20.45 9.65
0.15
0.08
0.25
mm
0.505
0.495
0.067
0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
0.815 0.390
0.805 0.380
0.006
0.003
0.010
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
03-01-10
07-05-09
SOT502B
Fig 11. Package outline SOT502B
BLS6G3135-120_6G3135S-120_1
© NXP B.V. 2007. All rights reserved.
Preliminary data sheet
Rev. 01 — 14 August 2007
8 of 11
BLS6G3135-120; BLS6G3135S-120
NXP Semiconductors
LDMOS S-Band radar power transistor
9. Abbreviations
Table 9.
Abbreviations
Acronym
LDMOS
LDMOST
RF
Description
Laterally Diffused Metal Oxide Semiconductor
Lateral Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
S-Band
VSWR
Short wave Band
Voltage Standing-Wave Ratio
10. Revision history
Table 10. Revision history
Document ID
Release date Data sheet status
Change notice
Supersedes
BLS6G3135-120_6G3135S-120_1
20070814
Preliminary data sheet
-
-
BLS6G3135-120_6G3135S-120_1
© NXP B.V. 2007. All rights reserved.
Preliminary data sheet
Rev. 01 — 14 August 2007
9 of 11
BLS6G3135-120; BLS6G3135S-120
NXP Semiconductors
LDMOS S-Band radar power transistor
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of a NXP Semiconductors product can reasonably be expected to
11.2 Definitions
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
12. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BLS6G3135-120_6G3135S-120_1
© NXP B.V. 2007. All rights reserved.
Preliminary data sheet
Rev. 01 — 14 August 2007
10 of 11
BLS6G3135-120; BLS6G3135S-120
NXP Semiconductors
LDMOS S-Band radar power transistor
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1.1
1.2
1.3
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
3
4
5
6
7
7.1
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 14 August 2007
Document identifier: BLS6G3135-120_6G3135S-120_1
相关型号：
©2020 ICPDF网 联系我们和版权申明