BLS6G3135S-20,112 [NXP]
BLS6G3135S-20;
| 型号： | BLS6G3135S-20,112 |
| 厂家： | 
NXP |
| 描述： | BLS6G3135S-20 局域网 放大器 CD 晶体管 |
| 文件： | 总12页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLS6G3135-20;
BLS6G3135S-20
LDMOS S-Band radar power transistor
Rev. 03 — 3 March 2009
Product data sheet
1. Product profile
1.1 General description
20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz
range.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 50 mA; in a class-AB
production test circuit.
Mode of operation f
(GHz)
VDS
(V)
PL
Gp
ηD
tr
tf
(W)
20
(dB)
15.5
(%)
45
(ns)
20
(ns)
10
Pulsed RF
3.1 to 3.5 32
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage
of 32 V, an IDq of 50 mA, a tp of 300 µs and a δ of 10 %:
N Output power = 20 W
N Power gain = 15.5 dB
N Efficiency = 45 %
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (3.1 GHz to 3.5 GHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLS6G3135-20; BLS6G3135S-20
NXP Semiconductors
LDMOS S-Band radar power transistor
1.3 Applications
I S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency
range
2. Pinning information
Table 2.
Pin
BLS6G3135-20 (SOT608A)
Pinning
Description
Simplified outline
Graphic symbol
1
2
3
drain
gate
1
1
[1]
source
2
3
3
2
sym112
BLS6G3135S-20 (SOT608B)
1
2
3
drain
gate
1
3
2
1
[1]
source
2
3
sym112
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLS6G3135-20
-
flanged ceramic package; 2 mounting holes; 2 leads
ceramic earless flanged package; 2 leads
SOT608A
SOT608B
BLS6G3135S-20 -
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
60
Unit
V
drain-source voltage
gate-source voltage
drain current
-
−0.5
+13
2.1
V
-
A
Tstg
Tj
storage temperature
junction temperature
−65
+150
225
°C
°C
-
BLS6G3135-20_6G3135S-20_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 3 March 2009
2 of 12
BLS6G3135-20; BLS6G3135S-20
NXP Semiconductors
LDMOS S-Band radar power transistor
5. Thermal characteristics
Table 5.
Symbol
Rth(j-case)
Thermal characteristics
Parameter
Conditions
Typ
Max Unit
thermal resistance from junction Tcase = 80 °C; PL = 20 W
to case
tp = 100 µs; δ = 20 %
0.76 0.92 K/W
0.79 0.95 K/W
tp = 300 µs; δ = 10 %
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.5 mA
60
-
-
V
VGS(th)
IDSS
gate-source threshold voltage VDS = 10 V; ID = 40 mA
1.4
-
2
2.4
1.5
-
V
drain leakage current
drain cut-off current
VGS = 0 V; VDS = 28 V
-
µA
A
IDSX
VGS = VGS(th) + 3.75 V;
6
8.2
VDS = 10 V
IGSS
gfs
gate leakage current
VGS = 8.3 V; VDS = 0 V
VDS = 10 V; ID = 1.4 A
-
-
-
-
150
-
nA
S
forward transconductance
2.8
0.37
RDS(on) drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 1.4 A
0.58
Ω
7. Application information
Table 7.
Mode of operation: pulsed RF; tp = 300 µs; δ = 10 %; RF performance at VDS = 32 V; IDq = 50 mA;
case = 25 °C; unless otherwise specified; in a class-AB production circuit.
Application information
T
Symbol
Parameter
output power
supply voltage
power gain
drain efficiency
rise time
Conditions
Min
Typ
20
-
Max
-
Unit
W
PL
VCC
Gp
ηD
tr
-
PL = 20 W
PL = 20 W
PL = 20 W
PL = 20 W
PL = 20 W
-
32
-
V
12
40
-
15.5
45
20
10
dB
%
-
50
50
ns
ns
tf
fall time
-
BLS6G3135-20_6G3135S-20_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 3 March 2009
3 of 12
BLS6G3135-20; BLS6G3135S-20
NXP Semiconductors
LDMOS S-Band radar power transistor
7.1 Impedance information
Table 8.
Typical impedance
[1]
f
ZS
ZL (optimized for ηD)
Ω
ZL (optimized for Gp)
Ω
Gp(opt)
dB
ηD
GHz
3.1
3.2
3.3
3.4
3.5
Ω
%
31.24 − j31.07
50.56 − j12.48
43.66 + j17.27
24.13 + j28.47
10.56 + j22.21
6.99 + j12.9
5.82 + j8.77
2.32 + j6.17
5.52 + j6.10
5.79 + j3.19
13.01 + j14.75
11.47 + j11.17
10.05 + j10.55
9.93 + j8.48
9.37 + j5.73
18.08
17.97
17.75
17.91
17.68
48.34
45.60
47.01
47.03
46.54
[1] Measured with ZL optimized for Gp.
drain
Z
L
gate
Z
S
001aaf059
Fig 1. Definition of transistor impedance
7.2 Ruggedness in class-AB operation
The BLS6G3135-20 and BLS6G3135S-20 are capable of withstanding a load mismatch
corresponding to VSWR = 5 : 1 through all phases under the following conditions:
VDS = 32 V; IDq = 50 mA; PL = 20 W; tp = 300 µs; δ = 10 %.
BLS6G3135-20_6G3135S-20_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 3 March 2009
4 of 12
BLS6G3135-20; BLS6G3135S-20
NXP Semiconductors
LDMOS S-Band radar power transistor
7.3 Graphs
001aaf983
001aaf984
17
50
17
η
D
G
η
G
p
p
D
(dB)
(%)
(dB)
(2)
(3)
G
p
15
40
15
(1)
13
11
9
30
20
10
0
13
11
9
7
7
3
3.2
3.4
3.6
0
10
20
30
f (GHz)
P (W)
L
VDS = 32 V; IDq = 50 mA; tp = 300 µs; δ = 10 %;
VDS = 32 V; IDq = 50 mA; tp = 300 µs; δ = 10 %.
PL = 20 W.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
Fig 2. Power gain and drain efficiency as functions of
frequency; typical values
Fig 3. Power gain as a function of load power; typical
values
001aaf985
001aaf986
(1)
60
30
(3)
(2)
η
D
(%)
P
(1)
L
(W)
50
(2)
(3)
20
40
30
20
10
10
0
0
10
20
30
0
0.4
0.8
1.2
P
(W)
P (W)
i
L
VDS = 32 V; IDq = 50 mA; tp = 300 µs; δ = 10 %.
VDS = 32 V; IDq = 50 mA; tp = 300 µs; δ = 10 %.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
Fig 4. Efficiency as a function of load power; typical
values
Fig 5. Load power as a function of input power;
typical values
BLS6G3135-20_6G3135S-20_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 3 March 2009
5 of 12
BLS6G3135-20; BLS6G3135S-20
NXP Semiconductors
LDMOS S-Band radar power transistor
001aaf987
001aaf988
17
50
16
η
(2)
(3)
(1)
D
G
(dB)
η
(%)
G
p
(dB)
p
D
G
15
40
14
p
13
11
9
30
20
10
0
12
10
8
7
6
3
3.2
3.4
3.6
0
10
20
30
f (GHz)
P (W)
L
VDS = 32 V; IDq = 100 mA; tp = 50 µs; δ = 20 %;
VDS = 32 V; IDq = 50 mA; tp = 100 µs; δ = 20 %.
PL = 20 W.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
Fig 6. Power gain and drain efficiency as functions of
frequency; typical values
Fig 7. Power gain as a function of load power; typical
values
001aaf989
001aaf990
60
30
η
(%)
D
(2) (3)
(1)
(1)
P
L
(W)
50
(2)
(3)
20
40
30
20
10
10
0
0
10
20
30
0
0.4
0.8
1.2
P
(W)
P (W)
i
L
VDS = 32 V; IDq = 50 mA; tp = 100 µs; δ = 20 %.
VDS = 32 V; IDq = 50 mA; tp = 100 µs; δ = 20 %.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
Fig 8. Efficiency as a function of load power; typical
values
Fig 9. Load power as a function of input power;
typical values
BLS6G3135-20_6G3135S-20_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 3 March 2009
6 of 12
BLS6G3135-20; BLS6G3135S-20
NXP Semiconductors
LDMOS S-Band radar power transistor
8. Test information
C5
C3
C4
C10
C11
C13
C12
C9
C8
V
DD
C7
L1
V
GG
C6
R1
λ / 4-line
λ / 4-line
C1
C2
001aah590
Striplines are on a double copper-clad Rogers Duroid 6006 Printed-Circuit Board (PCB) with εr = 6.2 and thickness = 0.64 mm.
See Table 9 for list of components.
Fig 10. Component layout for 3.1 GHz to 3.5 GHz test circuit
Table 9. List of components
See Figure 10.
Component
Description
Value
Remarks
[1]
[2]
C1, C2, C5, C6, C7, C8, C9
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
electrolytic capacitor
copper wire
33 pF
C3, C4, C10, C11
470 pF
47 µF; 63 V
10 µF; 35 V
-
C12
C13
L1
R1
resistor
49.9 Ω
[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
BLS6G3135-20_6G3135S-20_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 3 March 2009
7 of 12
BLS6G3135-20; BLS6G3135S-20
NXP Semiconductors
LDMOS S-Band radar power transistor
9. Package outline
Flanged ceramic package; 2 mounting holes; 2 leads
SOT608A
D
A
F
B
3
D
1
U
1
c
q
C
1
E
p
E
H
U
1
2
w
M
M
M
A
B
1
2
A
w
b
M
M
C
2
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
p
Q
q
U
U
w
w
2
UNIT
1
1
1
2
1
7.24
6.99
3.30
2.92
1.70
1.35
4.62
3.76
10.21 10.29 10.21 10.29 1.14 15.75
10.01 10.03 10.01 10.03 0.89 14.73
20.45 9.91
20.19 9.65
0.15
0.10
15.24
0.600
0.25
0.51
mm
0.285
0.275
0.130 0.067
0.115 0.053
0.182
0.148
0.402 0.405 0.402 0.405 0.045 0.620
0.394 0.395 0.394 0.395 0.035 0.580
0.805 0.390
0.795 0.380
0.006
0.004
0.010 0.020
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
01-02-22
02-02-11
SOT608A
Fig 11. Package outline SOT608A
BLS6G3135-20_6G3135S-20_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 3 March 2009
8 of 12
BLS6G3135-20; BLS6G3135S-20
NXP Semiconductors
LDMOS S-Band radar power transistor
Ceramic earless flanged package; 2 leads
SOT608B
D
A
F
3
D
1
A
U
1
c
1
U
2
H
E
E
1
2
M
M
A
w
0
b
Q
1
5 mm
scale
DIMENSIONS (mm dimensions are derived from the original inch dimensions)
UNIT
mm
A
b
c
D
D
E
E
F
H
Q
U
U
w
1
1
1
1
2
4.62 7.24 0.15 10.21 10.29 10.21 10.29 1.14 15.75 1.70 10.24 10.24
3.76 6.99 0.10 10.03 10.01 10.03 0.89 1.35 9.98
0.51
10.01
14.73
9.98
0.182 0.285 0.006 0.402 0.405 0.402 0.405 0.045 0.620 0.067 0.403 0.403
inch
0.020
0.148 0.275 0.004
0.395 0.394 0.395 0.035
0.053 0.393
0.580 0.393
0.394
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
06-11-27
06-12-06
SOT608B
Fig 12. Package outline SOT608B
BLS6G3135-20_6G3135S-20_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 3 March 2009
9 of 12
BLS6G3135-20; BLS6G3135S-20
NXP Semiconductors
LDMOS S-Band radar power transistor
10. Abbreviations
Table 10. Abbreviations
Acronym
Description
LDMOS
RF
Laterally Diffused Metal Oxide Semiconductor
Radio Frequency
S-Band
VSWR
Short wave Band
Voltage Standing-Wave Ratio
11. Revision history
Table 11. Revision history
Document ID
Release date Data sheet status
Change notice Supersedes
BLS6G3135-20_6G3135S-20_2
BLS6G3135-20_6G3135S-20_3 20090303
Product data sheet
-
Modifications:
• Section 7.1 on page 4: Impedance information added
BLS6G3135-20_6G3135S-20_2 20081217
BLS6G3135-20_6G3135S-20_1 20070307
Product data sheet
-
BLS6G3135-20_6G3135S-20_1
Objective data sheet -
-
BLS6G3135-20_6G3135S-20_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 3 March 2009
10 of 12
BLS6G3135-20; BLS6G3135S-20
NXP Semiconductors
LDMOS S-Band radar power transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
12.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLS6G3135-20_6G3135S-20_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 3 March 2009
11 of 12
BLS6G3135-20; BLS6G3135S-20
NXP Semiconductors
LDMOS S-Band radar power transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1.1
1.2
1.3
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
Application information. . . . . . . . . . . . . . . . . . . 3
Impedance information . . . . . . . . . . . . . . . . . . . 4
Ruggedness in class-AB operation. . . . . . . . . . 4
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.1
7.2
7.3
8
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 3 March 2009
Document identifier: BLS6G3135-20_6G3135S-20_3
相关型号：
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