BLS7G2730L-200PU [NXP]
BLS7G2730L-200P;
| 型号： | BLS7G2730L-200PU |
| 厂家： | 
NXP |
| 描述： | BLS7G2730L-200P |
| 文件： | 总15页 (文件大小：332K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLS7G2730L-200P;
BLS7G2730LS-200P
LDMOS S-band radar power transistor
Rev. 3 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for S-band radar applications in the frequency range from
2700 MHz to 3000 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C.
Test signal
f
VDS
(V)
PL
Gp
D
tr
tf
(GHz)
(W)
(dB)
(%)
(ns)
(ns)
Class-AB production test circuit
pulsed RF [1]
2.7 to 3.0
32
200
12
48
8
5
Application circuit
pulsed RF [2]
pulsed RF [3]
2.7 to 3.0
2.9 to 3.1
32
32
220
220
12.5
12.5
50
50
20
20
6
6
[1] tp = 300 s; = 10 %; IDq = 100 mA
[2] tp = 3000 s; = 20 %; IDq = 50 mA
[3] tp = 500 s; = 20 %; IDq = 50 mA
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for broadband operation
Excellent thermal stability
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band radar applications in the frequency range 2700 MHz to 3000 MHz
BLS7G2730L(S)-200P
NXP Semiconductors
LDMOS S-band radar power transistor
2. Pinning information
Table 2.
Pin
Pinning
Description
Simplified outline
Graphic symbol
BLS7G2730L-200P (SOT539A)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
1
3
2
4
1
5
3
5
4
[1]
2
sym117
BLS7G2730LS-200P (SOT539B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
1
3
2
4
1
5
3
5
4
[1]
2
sym117
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLS7G2730L-200P
BLS7G2730LS-200P
-
flanged balanced ceramic package; 2 mounting holes; SOT539A
4 leads
-
earless flanged balanced ceramic package; 4 leads
SOT539B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Min
-
Max
65
Unit
V
drain-source voltage
gate-source voltage
storage temperature
junction temperature
VGS
Tstg
0.5
65
-
+13
+150
225
V
C
C
[1]
Tj
[1] Continuous use at maximum temperature will affect the reliability.
BLS7G2730L-200P_LS-200P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 12 July 2013
2 of 15
BLS7G2730L(S)-200P
NXP Semiconductors
LDMOS S-band radar power transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ
Unit
Zth(j-c)
transient thermal impedance from junction Tcase = 85 C; PL = 200 W
to case
tp = 300 s; = 10 %
0.13 K/W
tp = 3000 s; = 20 % 0.19 K/W
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.2 mA
65
-
-
V
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
VDS = 10 V; ID = 120 mA 1.5
1.9
-
2.3
2.8
-
V
VGS = 0 V; VDS = 28 V
-
-
A
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
22.5
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 0.12 A
-
-
-
-
280 nA
forward transconductance
1
-
-
S
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 4.2 A
0.13
Table 7.
RF characteristics
Test signal: pulsed RF; tp = 300 s; = 10 %; RF performance at VDS = 32 V; IDq = 100 mA;
Tcase = 25 C; unless otherwise specified, in a class-AB production test circuit.
Symbol
Gp
Parameter
Conditions Min
Typ
12
10
48
0
Max Unit
power gain
PL = 200 W 9.8
-
dB
dB
%
RLin
D
input return loss
drain efficiency
PL = 200 W
-
6
-
PL = 200 W 43
Pdroop(pulse) pulse droop power
PL = 200 W
PL = 200 W
PL = 200 W
-
-
-
0.25 dB
tr
tf
rise time
fall time
8
50
50
ns
ns
5
7. Test information
7.1 Ruggedness in class-AB operation
The BLS7G2730L-200P and BLS7G2730LS-200P are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under following conditions:
V
DS = 32 V; IDq = 100 mA; PL = 200 W; f = 2700 MHz; tp = 300 s; = 10 %
BLS7G2730L-200P_LS-200P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 12 July 2013
3 of 15
BLS7G2730L(S)-200P
NXP Semiconductors
LDMOS S-band radar power transistor
7.2 Impedance information
Table 8.
Typical impedance
Measured load-pull data half device; VDS = 32 V; IDq = 100 mA.
[1]
[1]
f
ZS
ZL
(MHz)
2700
2800
2900
3000
()
()
2.0 j5.8
1.6 j5.9
2.6 j6.2
3.4 j6.0
3.7 j6.4
3.8 j6.9
3.8 j6.9
3.7 j6.4
[1] ZS and ZL defined in Figure 1.
drain
Z
L
gate
Z
S
001aaf059
Fig 1. Definition of transistor impedance
7.3 Production test circuit
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Printed-Circuit Board (PCB): Arlon TC600 with a thickness of 0.64 mm.
See Table 9 for a list of components.
Fig 2. Component layout for a class-AB production test circuit
BLS7G2730L-200P_LS-200P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 12 July 2013
4 of 15
BLS7G2730L(S)-200P
NXP Semiconductors
LDMOS S-band radar power transistor
Table 9.
List of components test circuit
See Figure 2.
Component
C1, C3, C6, C9, C13, C15
C2, C5, C10, C16
C4, C7, C8, C14
C11, C17
Description
Value
Remarks
[1]
[2]
[1]
[2]
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
18 pF
ATC600F
1 F
12 pF
ATC600F
10 F
C12
2200 F, 63 V
9.1
[3]
R1, R2
chip resistor
[1] American Technical Ceramics type 600F or capacitor of same quality.
[2] Murata or capacitor of same quality.
[3] Vishay Dale or capacitor of same quality.
7.4 Application circuit
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Printed-Circuit Board (PCB): Arlon TC600 with a thickness of 0.64 mm.
See Table 10 for a list of components.
Fig 3. Component layout for a class-AB application circuit
Table 10. List of components application circuit
See Figure 2.
Component
C1, C3, C5, C6, C7, C8
C2, C4
Description
Value
Remarks
[1]
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
chip resistor
12 pF
ATC600F
[2]
1 F
C9, C10
2200 F, 50 V
50
[3]
R1, R2
[1] American Technical Ceramics type 600F or capacitor of same quality.
[2] Murata or capacitor of same quality.
[3] Vishay Dale or capacitor of same quality.
BLS7G2730L-200P_LS-200P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 12 July 2013
5 of 15
BLS7G2730L(S)-200P
NXP Semiconductors
LDMOS S-band radar power transistor
7.5 Graphical data
7.5.1 Test circuit
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VDS = 32 V; IDq = 100 mA; tp = 300 s; = 10 %.
VDS = 32 V; IDq = 100 mA; tp = 300 s; = 10 %.
(1) f = 2700 MHz
(2) f = 2800 MHz
(3) f = 2850 MHz
(4) f = 2900 MHz
(5) f = 3000 MHz
(1) f = 2700 MHz
(2) f = 2800 MHz
(3) f = 2850 MHz
(4) f = 2900 MHz
(5) f = 3000 MHz
Fig 4. Output power as a function of input power;
typical values
Fig 5. Power gain as a function of output power;
typical values
BLS7G2730L-200P_LS-200P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 12 July 2013
6 of 15
BLS7G2730L(S)-200P
NXP Semiconductors
LDMOS S-band radar power transistor
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VDS = 32 V; IDq = 100 mA; tp = 300 s; = 10 %.
VDS = 32 V; PL = 200 W; IDq = 100 mA; tp = 300 s;
= 10 %.
(1) f = 2700 MHz
(2) f = 2800 MHz
(3) f = 2850 MHz
(4) f = 2900 MHz
(5) f = 3000 MHz
Fig 6. Drain efficiency as a function of output power;
typical values
Fig 7. Power gain and drain efficiency as function of
frequency; typical values
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VDS = 32 V; PL = 200 W; IDq = 100 mA; tp = 300 s; = 10 %.
Fig 8. Input return loss as a function of frequency; typical values
BLS7G2730L-200P_LS-200P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 12 July 2013
7 of 15
BLS7G2730L(S)-200P
NXP Semiconductors
LDMOS S-band radar power transistor
7.5.2 Application circuit
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VDS = 32 V; IDq = 50 mA; tp = 3000 s; = 20 %.
VDS = 32 V; IDq = 50 mA; tp = 3000 s; = 20 %.
(1) f = 2700 MHz
(2) f = 2800 MHz
(3) f = 2850 MHz
(4) f = 2900 MHz
(5) f = 3000 MHz
(1) f = 2700 MHz
(2) f = 2800 MHz
(3) f = 2850 MHz
(4) f = 2900 MHz
(5) f = 3000 MHz
Fig 9. Output power as a function of input power;
typical values
Fig 10. Power gain as a function of output power;
typical values
BLS7G2730L-200P_LS-200P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 12 July 2013
8 of 15
BLS7G2730L(S)-200P
NXP Semiconductors
LDMOS S-band radar power transistor
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VDS = 32 V; IDq = 50 mA; tp = 3000 s; = 20 %.
VDS = 32 V; PL = 220 W; IDq = 50 mA; tp = 3000 s;
= 20 %.
(1) f = 2700 MHz
(2) f = 2800 MHz
(3) f = 2850 MHz
(4) f = 2900 MHz
(5) f = 3000 MHz
Fig 11. Drain efficiency as a function of output power;
typical values
Fig 12. Power gain and drain efficiency as function of
frequency; typical values
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VDS = 32 V; PL = 220 W; IDq = 50 mA; tp = 3000 s; = 20 %.
Fig 13. Input return loss as a function of frequency; typical values
BLS7G2730L-200P_LS-200P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 12 July 2013
9 of 15
BLS7G2730L(S)-200P
NXP Semiconductors
LDMOS S-band radar power transistor
8. Package outline
Flanged balanced ceramic package; 2 mounting holes; 4 leads
SOT539A
D
A
F
D
1
U
1
B
q
C
w
H
1
M
M
C
2
c
1
2
4
E
p
E
H
U
1
2
5
w
M
M
M
B
A
1
L
3
A
w
b
M
3
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
e
E
E
F
H
H
L
p
Q
q
U
U
w
w
w
3
UNIT
1
1
1
1
2
1
2
11.81
11.56
3.30 2.26
3.05 2.01
4.7
4.2
31.55 31.52
30.94 30.96
9.50 9.53 1.75 17.12 25.53 3.48
9.30 9.27 1.50 16.10 25.27 2.97
41.28 10.29
41.02 10.03
0.18
0.10
35.56
1.400
0.25 0.51 0.25
0.010 0.020 0.010
mm
13.72
0.465
0.455
0.130 0.089
0.120 0.079
0.185
0.165
1.242 1.241
1.218 1.219
0.374 0.375 0.069 0.674 1.005 0.137
0.366 0.365 0.059 0.634 0.995 0.117
1.625 0.405
1.615 0.395
0.007
0.004
0.540
inches
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
10-02-02
12-05-02
SOT539A
Fig 14. Package outline SOT539A
BLS7G2730L-200P_LS-200P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 12 July 2013
10 of 15
BLS7G2730L(S)-200P
NXP Semiconductors
LDMOS S-band radar power transistor
Earless flanged balanced ceramic package; 4 leads
SOT539B
D
A
F
5
D
1
D
U
H
1
c
w
2
D
1
1
2
E
1
U
E
H
2
L
3
4
b
w
3
Q
e
0
5
10 mm
scale
Dimensions
(1)
Unit
A
b
c
D
D
1
E
E
e
F
H
H
L
Q
U
1
U
2
w
2
w
3
1
1
max 4.7 11.81 0.18 31.55 31.52 9.5
mm nom
min 4.2 11.56 0.10 30.94 30.96 9.3
9.53
1.75 17.12 25.53 3.48 2.26 32.39 10.29
13.72
0.54
0.25 0.25
0.01 0.01
9.27
1.50 16.10 25.27 2.97 2.01 32.13 10.03
0.069 0.674 1.005 0.137 0.089 1.275 0.405
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375
inches nom
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365
0.059 0.634 0.995 0.117 0.079 1.265 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
sot539b_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
12-05-02
13-05-24
SOT539B
Fig 15. Package outline SOT539B
BLS7G2730L-200P_LS-200P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 12 July 2013
11 of 15
BLS7G2730L(S)-200P
NXP Semiconductors
LDMOS S-band radar power transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 11. Abbreviations
Acronym
ESD
Description
ElectroStatic Discharge
Laterally Diffused Metal-Oxide Semiconductor
Short wave band
LDMOS
S-band
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 12. Revision history
Document ID
Release date Data sheet status
Change notice Supersedes
BLS7G2730S-200P_LS-200P v.2
BLS7G2730S-200P_LS-200P v.3 20130712
Product data sheet
-
Modifications:
BLS7G2730S-200P_LS-200P v.2 20130603
Modifications
•
The package outline Figure 15 is updated.
Product data sheet
-
BLS7G2730S-200P_LS-200P v.1
• Table 1 on page 1: table has been updated
• Section 1.2 on page 1: section has been updated
• Table 4 on page 2: table has been updated
• Table 5 on page 3: table has been updated
• Table 6 on page 3: table has been updated
• Table 7 on page 3: table has been updated
• Section 7 on page 3: section has been added
• Figure 15 on page 11: figure has been updated
BLS7G2730S-200P_LS-200P v.1 20130129
Objective data sheet -
-
BLS7G2730L-200P_LS-200P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 12 July 2013
12 of 15
BLS7G2730L(S)-200P
NXP Semiconductors
LDMOS S-band radar power transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
12.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
BLS7G2730L-200P_LS-200P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 12 July 2013
13 of 15
BLS7G2730L(S)-200P
NXP Semiconductors
LDMOS S-band radar power transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLS7G2730L-200P_LS-200P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 12 July 2013
14 of 15
BLS7G2730L(S)-200P
NXP Semiconductors
LDMOS S-band radar power transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Impedance information. . . . . . . . . . . . . . . . . . . 4
Production test circuit . . . . . . . . . . . . . . . . . . . . 4
Application circuit . . . . . . . . . . . . . . . . . . . . . . . 5
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Application circuit . . . . . . . . . . . . . . . . . . . . . . . 8
7.1
7.2
7.3
7.4
7.5
7.5.1
7.5.2
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Handling information. . . . . . . . . . . . . . . . . . . . 12
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 July 2013
Document identifier: BLS7G2730L-200P_LS-200P
相关型号：
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