BLT71 [NXP]
UHF power transistor; 超高频功率晶体管
| 型号： | BLT71 |
| 厂家： | 
NXP |
| 描述： | UHF power transistor |
| 文件： | 总12页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLT71/8
UHF power transistor
1997 Oct 14
Product specification
Supersedes data of 1996 Feb 06
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
FEATURES
PINNING - SOT96-1
• High efficiency
PIN
SYMBOL
DESCRIPTION
• Very high gain
1, 8
2, 4, 5, 7
3, 6
b
e
c
base
• Internal pre-matched input
• Low supply voltage.
emitter
collector
APPLICATIONS
• Hand-held radio equipment in common emitter class-AB
8
5
handbook, halfpage
operation for the 900 MHz communication band.
DESCRIPTION
1
4
NPN silicon planar epitaxial power transistor encapsulated
in a SOT96-1 (SO8) plastic SMD package.
Top view
MBK187
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Ts ≤ 60 °C in a common emitter test circuit.
f
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
MODE OF OPERATION
(MHz)
≥11
≥55
CW, class-AB
900
4.8
1.2
typ. 13
typ. 63
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
−
−
−
−
−
16
V
open base
8
V
open collector
2.5
500
2.9
+150
175
V
collector current (DC)
total power dissipation
storage temperature
mA
W
°C
°C
Ptot
Tstg
Tj
Ts = 60 °C; VCE ≤ 6.5 V; note 1
−65
operating junction temperature
−
Note
1. Ts is the temperature at the soldering point of the collector pin.
1997 Oct 14
2
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
40
UNIT
Rth j-s
thermal resistance from junction to
soldering point
Pdis = 2.9 W; Ts = 60 °C; note 1
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
16
MAX.
UNIT
V(BR)CBO collector-base breakdown voltage
open emitter; IC = 0.5 mA
−
−
−
V
V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA
8
V
V(BR)EBO emitter-base breakdown voltage
open collector; IE = 0.1 mA
VCE = 8 V; VBE = 0
2.5
−
V
ICES
hFE
Cc
collector leakage current
DC current gain
0.1
−
mA
VCE = 5 V; IC = 100 mA
25
−
collector capacitance
feedback capacitance
VCB = 4.8 V; IE = ie = 0; f = 1 MHz
VCE = 4.8 V; IC = 0; f = 1 MHz
7
pF
pF
Cre
−
5
MBK263
MLD131
1
150
handbook, halfpage
handbook, halfpage
I
C
h
FE
(A)
100
(1)
50
−1
10
0
10
−1
2
1
10
10
0
200
400
600
I
800
V
(V)
CE
(mA)
C
VCE = 4.8 V.
Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0.001.
Ts = 115 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.2 DC SOAR.
1997 Oct 14
3
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
APPLICATION INFORMATION
RF performance at Ts ≤ 60 °C in a common emitter test circuit.
f
VCE
(V)
ICQ
(mA)
PL
(W)
Gp
(dB)
ηC
(%)
MODE OF OPERATION
(MHz)
≥11
≥55
CW, class-AB
900
4.8
3
1.2
typ. 13
typ. 63
Ruggedness in class-AB operation
The BLT71/8 is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under the
following conditions: f = 900 MHz; VCE = 6.5 V; ICQ = 3 mA; PL = 1.2 W; Ts = 60 °C.
MGD192
MGD191
80
2.0
16
handbook, halfpage
handbook, halfpage
P
G
L
p
η
C
(W)
1.6
η
(dB)
12
C
(%)
60
G
p
1.2
0.8
40
20
0
8
4
0.4
0
0
0
0
50
100
150
200
(mW)
0.4
0.8
1.2
1.6
2.0
P
(W)
P
L
IN
VCE = 4.8 V; ICQ = 3 mA; f = 900 MHz.
VCE = 4.8 V; ICQ = 3 mA; f = 900 MHz.
Fig.4 Power gain and collector efficiency as
functions of load power; typical values.
Fig.5 Load power as a function of input power;
typical values.
1997 Oct 14
4
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
V
= 24 V
R1
V
= 4.8 V
C
bias
C16
R2
C14
L13
R3
L14
R4
TR2
C15
L12
L6
C13
C3
L3
C5
C4
C9
C8
C11
L9 C12 L10
50 Ω
50 Ω
L11
output
input
L1
C1
L2
L4
L5
L7
L8
TR1
D.U.T.
C2
C6
C7
C10
BLT71/8
MBK267
Fig.6 Class-AB test circuit at f = 900 MHz.
1997 Oct 14
5
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
140
80
plated througholes
fixing screws
V
V
C
b
C14
R3
C16
L14
TR2
R1
L13
R4
C15
R2
L3
L11
L5
C13
L12
C3
C5
C9
C11
C12
L10
C1
L1
L4
L6
L7
L8
C6
C7
L9
L2
C2
C4
C8
C10
MBK266
Dimensions in mm
The components are situated on one side of the copper-clad printed circuit board, the other side is unetched and serves
as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.7 Printed-circuit board and component lay-out for the 900 MHz class-AB test circuit.
6
1997 Oct 14
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
List of components (see Figs 6 and 7).
CATALOGUE
NO.
COMPONENT
DESCRIPTION
multilayer ceramic chip capacitor; note 1 120 pF
Giga-Trim capacitor; note 2 0.6 to 4.5 pF
VALUE
DIMENSIONS
C1, C12,
C13, C15
C2, C4, C8,
C10
C3
multilayer ceramic chip capacitor; note 1 4.7 pF
multilayer ceramic chip capacitor; note 1 5.6 pF
multilayer ceramic chip capacitor; note 1 3.9 pF
multilayer ceramic chip capacitor; note 1 6.8 pF
multilayer ceramic chip capacitor; note 1 7.5 pF
multilayer ceramic chip capacitor; note 1 5.1 pF
multilayer ceramic chip capacitor; note 1 10 nF
C5
C6
C7
C9
C11
C14, C16
L1, L10
L2
stripline; note 3
50 Ω
50 Ω
50 Ω
50 Ω
50 Ω
50 Ω
50 Ω
50 Ω
50 Ω
140 nH
10 x 2.4 mm
2 x 2.4 mm
stripline; note 3
L3
stripline; note 3
30.4 x 2.4 mm
17.4 x 2.4 mm
6.8 x 2.4 mm
8 x 2.4 mm
L4
stripline; note 3
L5
stripline; note 3
L6
stripline; note 3
L7
stripline; note 3
19 x 2.4 mm
28 x 2.4 mm
1.6 x 2.4 mm
L8
stripline; note 3
L9
stripline; note 3
L11
10 turns 1 mm enamelled copper wire
int. dia. = 4 mm;
lead 1 = 2.5 mm;
lead 2 = 11 mm
L12
2 turns 1 mm enamelled copper wire
60 nH
int. dia. = 2 mm;
leads = 2 x 7.5 mm
L13, L14
R1
4S2 wideband RF choke
metal film resistor
metal film resistor
device under test
NPN transistor
4330 030 36301
2322 156 11402
2322 156 11009
1.4 kΩ; 0.6 W
10 Ω; 0.6 W
BLT71/8
R2, R3, R4
TR1
TR2
BD139
9330 912 20112
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. Tekelec Giga-trim, type 37271.
3. The striplines are on a double copper-clad printed-circuit board, with DUROID dielectric (εr = 2.2);
thickness 0.79 mm, thickness of the copper sheet 2 x 35 µm.
1997 Oct 14
7
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
MBK264
MBK265
12
10
handbook, halfpage
handbook, halfpage
Z
L
Z
i
(Ω)
(Ω)
8
r
i
R
L
8
6
4
2
x
i
4
0
X
L
0
800
800
850
900
950
1000
850
900
950
1000
f (MHz)
f (MHz)
VCE = 4.8 V; ICQ = 3 mA; PL = 1.2 W; Tamb = 25 °C.
VCE = 4.8 V; ICQ = 3 mA; PL = 1.2 W; Tamb = 25 °C.
Fig.8 Input impedance as a function of frequency
(series components); typical values.
Fig.9 Load impedance as a function of frequency
(series components); typical values.
MGD195
23.4
handbook, halfpage
16
handbook, halfpage
G
p
(dB)
12
8
4
0
Z
Z
L
i
Z
i
Z
850
900
950
1000
L
MGD196
f (MHz)
VCE = 4.8 V; ICQ = 3 mA; PL = 1.2 W; Tamb = 25 °C.
Dimensions in mm.
Fig.10 Power gain as a function of frequency
(series components); typical values.
Fig.11 RF test print and definition of transistor
impedance.
1997 Oct 14
8
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
PACKAGE OUTLINE
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
v
c
y
H
M
A
E
Z
5
8
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
4
e
w
M
detail X
b
p
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(2)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.050
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches 0.069
0.01 0.004
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-02-04
97-05-22
SOT96-1
076E03S
MS-012AA
1997 Oct 14
9
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Oct 14
10
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
NOTES
1997 Oct 14
11
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© Philips Electronics N.V. 1997
SCA55
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Printed in The Netherlands
127067/00/02/pp12
Date of release: 1997 Oct 14
Document order number: 9397 750 02923
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