BLV58 [NXP]
UHF linear push-pull power transistor; UHF线性推挽功率晶体管
| 型号： | BLV58 |
| 厂家： | 
NXP |
| 描述： | UHF linear push-pull power transistor |
| 文件： | 总13页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV58
UHF linear push-pull power
transistor
September 1991
Product specification
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV58
FEATURES
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter test circuit.
• High power gain
dim
(dB)
(note 1)
• Double stage internal input
matching for high input impedance
MODE OF
OPERATION
fvision
(MHz)
VCE
(V)
ICQ
(A)
Po sync
(W)
Gp
(dB)
• Diffusedemitter-ballastingresistors
enhances ruggedness
c.w. class-A
860
25
2 × 1.6
25
>10
< −45
• Gold metallization for high
reliability.
Note
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB,
sideband signal −16 dB); zero dB corresponds to peak sync level.
DESCRIPTION
The BLV58 is a common emitter
epitaxial npn silicon planar transistor
designed for high linearity class-A
operation in UHF (bands 4 and 5) TV
transmitters and transposers.
PIN CONFIGURATION
c1
1
2
4
k, halfpage
The device is incorporated in a
push-pull SOT289 flange envelope
with a ceramic cap, which is utilized
with the emitters connected to the
flange.
b1
b2
e
5
3
MBC043
Top view
PINNING - SOT289
MBA970
c2
PIN
DESCRIPTION
collector 1
Fig.1 Simplified outline and symbol.
1
2
3
4
5
collector 2
base 1
WARNING
base 2
Product and environmental safety - toxic materials
emitter
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
September 1991
2
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV58
LIMITING VALUES (per transistor section unless otherwise specified)
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
50
UNIT
−
−
−
−
−
V
VCEO
VEBO
IC, IC(AV)
ICM
collector-emitter voltage
emitter-base voltage
collector current
open base
27
3.5
4
V
V
A
A
open collector
DC or average value
collector current
peak value;
8
f > 1 MHz
Ptot
total power dissipation
DC operation;
Tmb = 70 °C
(note 1)
−
87
W
Tstg
Tj
storage temperature range
−65
150
200
°C
°C
junction operating temperature
−
Note
1. Total device, both sections equally loaded.
MRA354
MRA355
200
10
handbook, halfpage
handbook, halfpage
P
tot
(W)
160
I
o
C
T
= 25
C
h
(A)
o
T
= 70 C
mb
120
80
40
0
II
I
1
0
20
40
60
80
100
120
o
1
10
50
V
(V)
CE
T
( C)
h
(I) Continuous DC operation.
(II) Short time operation during mismatch.
Total device, both sections equally loaded.
Total device, both sections equally loaded.
Fig.2 DC SOAR.
Fig.3 Power derating curve.
September 1991
3
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV58
THERMAL RESISTANCE
SYMBOL
Rth j-mb(DC)
PARAMETER
CONDITIONS
Pdis = 87 W;
MAX.
UNIT
K/W
from junction to mounting base
1.5
Tmb = 70 °C
(note 1)
Rth mb-h
from mounting base to heatsink
note 1
0.2
K/W
Note
1. Total device, both sections equally loaded.
CHARACTERISTICS
Values apply to either transistor section; Tj = 25 °C.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter;
IC = 20 mA
50
27
3.5
−
−
−
V
V(BR)CEO
V(BR)EBO
ICES
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-emitter leakage current
DC current gain
open base;
IC = 50 mA
−
−
V
open collector;
IE = 10 mA
−
−
V
VBE = 0;
VCE = 27 V
−
10
−
mA
hFE
VCE = 25 V;
IC = 1.6 A
30
−
−
Cc
collector capacitance
VCB = 25 V;
IE = Ie = 0;
f = 1 MHz
36
45
pF
September 1991
4
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV58
MRA350
MRA346
120
handbook, halfpage
handbook, halfpage
C
c
(pF)
h
FE
120
80
80
40
40
0
0
0
0
1
2
3
10
20
30
40
V
(V)
I
(A)
CB
C
VCE = 25 V.
IE = ie = 0; f = 1 MHz.
Fig.4 DC current gain as a function of collector
current, typical values.
Fig.5 Collector capacitance as a function of
collector-base voltage, typical values.
September 1991
5
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV58
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common emitter push-pull test circuit; Rth mb-h = 0.2 K/W.
dim
(dB)
(note 1)
dcm
(%)
(note 2)
fvision
(MHz)
VCE
(V)
ICQ
(A)
Po sync
(W)
GP
(dB)
MODE OF OPERATION
c.w. class-A
860
25
2 × 1.6
25
> 10
< −45
< 20
typ. 11.5
typ. −47
Notes
1. Three-tone test method: vision carrier −8 dB (860 MHz), sound carrier −7 dB (865.5 MHz), sideband signal −16 dB
(861 MHz); zero dB corresponds to peak sync level.
2. Two-tone test method: vision carrier 0 dB (860 MHz), sound carrier −7 dB (865.5 MHz); zero dB corresponds to peak
sync level. Cross-modulation distortion (dcm) is the voltage variation (%) of the sound carrier when the vision carrier
is switched from 0 dB to −20 dB.
MRA351
MRA349
-40
handbook, halfpage
-40
handbook, halfpage
d
im
d
im
(dB)
-42
(dB)
-50
o
-44
-46
-48
-50
T
h
= 70 C
o
T
= 25 C
h
o
T
= 70 C
h
-60
o
T
= 25
C
h
1.6
2.4
3.2
4
I
(A)
-70
0
C
10
20
30
P
(W)
o sync
Class-A operation; VCE = 25 V; f = 860 MHz; 3-tone test
Class-A operation; VCE = 25 V; f = 860 MHz; 3-tone test
(−8 dB, −16 dB, −7 dB); ICQ = 2 × 1.6 A.
(−8 dB, −16 dB, −7 dB); Po sync = 25 W.
Fig.6 Intermodulation distortion as a function of
output power.
Fig.7 Intermodulation distortion as a function of
collector current.
VCE = 25 V, f = 860 MHz, Th = 25 °C,
Rth mb-h = 0.2 K/W, ICQ = 2 × 1.6 A,
and rated output power.
Ruggedness in Class-A operation
The BLV58 is capable of withstanding a full load mismatch
corresponding to VSWR = 50:1 through all phases under
the following conditions:
September 1991
6
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV58
MRA348
MRA356
13
handbook, halfpage
handbook, halfpage
P
o sync
G
P
(dB)
(W)
30
o
T
= 25 C
o
h
T
= 25 C
h
11
o
T
= 70 C
mb
20
10
0
o
T
h
= 70 C
9
7
0
10
20
30
0
1
2
3
P
(W)
P
(W)
i sync
o sync
Class-A operation; VCE = 25 V; f = 860 MHz; 3-tone test
Class-A operation; VCE = 25 V; f = 860 MHz; 3-tone test
(−8 dB, −16 dB, −7 dB); ICQ = 2 × 1.6 A.
(−8 dB, −16 dB, −7 dB); ICQ = 2 × 1.6 A.
Fig.8 Output power as a function of input power.
Fig.9 Gain as a function of output power, typical
values.
September 1991
7
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV58
V
CC
C15
C16
L12
R1
V
BB
C7
C8
C17
C19
C18
C20
C9
C10
C21
L6
L13
L10
L4
BLV58
C1
L8
C34
L20
L1
L2
L16
L18
50 Ω
L21
input
C31
50 Ω
output
C3
C4
C5
C6
C29
L11
C30
C33
C32
L3
L22
L5
L9
L17
C23
L19
C35
T.U.T.
C2
L7
C22
C24
C11
C25
C26
C13
C14
C12
V
BB
L15
R2
MBC048
C28
C27
V
CC
bnok,lfuapgedwith
Fig.10 Class-A test circuit at f = 860 MHz.
September 1991
8
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV58
List of components (see test circuit)
COMPONENT
DESCRIPTION
VALUE
15 pF
DIMENSIONS
CATALOGUE NO.
C1, C2, C34,
C35
multilayer ceramic chip capacitor
(note 1)
C3
multilayer ceramic chip capacitor
(note 1)
3.9 pF
C4, C6
C5
film dielectric trimmer
5.5 pF
7.5 pF
2222 809 09005
multilayer ceramic chip capacitor
(note 1)
C7, C12, C17,
C26
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
63 V electrolytic capacitor
10 nF
2222 852 47103
2222 852 47104
C8, C14, C19,
C25
100 nF
10 µF
C9, C11, C16,
C20, C22, C28
C10, C13, C15,
C21, C23, C27
multilayer ceramic chip capacitor
(note 1)
330 pF
C18, C24
C29
63 V electrolytic capacitor
1 µF
multilayer ceramic chip capacitor
(note 1)
12 pF
C30
multilayer ceramic chip capacitor
(note 1)
5.6 pF
3.5 pF
C31, C33
C32
film dielectric trimmer
2222 809 05001
multilayer ceramic chip capacitor (note 1) 2.7 pF
L1, L3, L20, L22
L2, L21
stripline (note 2)
35 Ω
50 Ω
39 mm × 4 mm
semi-rigid cable (note 3)
ext. dia. 3.6 mm;
length 39 mm
L4, L5
stripline (note 2)
RF choke
38 Ω
19 mm × 3.5 mm
L6, L7
470 nH
38 Ω
L8, L9
stripline (note 2)
stripline (note 2)
grade 3B RF choke
1 turn 1.5 mm copper wire
7.5 mm × 3.5 mm
4.5 mm × 3.5 mm
L10, L11
L12, L15
L13, L14
38 Ω
4312 020 36642
14 nH
int. dia 7 mm;
leads 2 × 6 mm
L16, L17
L18, L19
R1, R2
stripline (note 2)
38 Ω
38 Ω
10 Ω
7 mm × 3.5 mm
18 mm × 3.5 mm
stripline (note 2)
1 W metal film resistor
Notes
1. American Technical Ceramics type 100B or capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE microfibre-glass dielectric (εr = 2.2),
thickness 1⁄32 inch, thickness of copper sheet 2 × 35 µm.
3. Cables L2 and L21 are soldered to striplines L1 and L20, respectively.
September 1991
9
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV58
170 mm
rivet
(2x)
80 mm
copper strap
(6x)
MBC046
C7
C8
C10
C18
C20
C9
C16
C15
C17
C19
C21
L12
R1
L13
L6
C30
C31
C34
C1
C2
L16
L4
L10
C29
L11
L18
L8
L9
C3
C4
C5
C6
L19
L5
C32
C33
L17
C35
L7
L14
C26
C25
C23
R2
L15
C27
C14
C13
C12
C11
C28
C24
C22
MBC047
The components are mounted on one side of a copper clad PTFE microfibre-glass board; the other side is
unetched and serves as a ground plane. Earth connections from the component side to the ground plane are
made by hollow rivets and copper straps.
Fig.11 Component layout for 860 MHz class-A test circuit.
September 1991
10
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV58
MRA352
MRA353
6
6
handbook, halfpage
handbook, halfpage
Z
i
Z
L
(Ω)
(Ω)
r
i
4
4
R
L
x
i
2
X
L
2
0
0
-1
400
400
500
600
700
800
900
500
600
700
800
f
900
(MHz)
f (MHz)
Class-A operation; VCE = 25 V;
Class-A operation; VCE = 25 V;
ICQ = 1.6 A (per section); PL = 25 W (total device);
ICQ = 1.6 A (per section); PL = 25 W (total device);
Th = 25 °C.
Th = 25 °C.
Fig.12 Input impedance per section (series
components) as a function of frequency,
typical values.
Fig.13 Load impedance per section (series
components) as a function of frequency,
typical values.
MRA347
16
handbook, halfpage
G
P
(dB)
14
handbook, halfpage
12
10
Z
i
Z
MBA451
L
400
500
600
700
800
900
f (MHz)
Class-A operation; VCE = 25 V;
ICQ = 1.6 A (per section); PL = 25 W (total device);
Th = 25 °C.
Fig.14 Definition of transistor impedance.
Fig.15 Power gain as a function of frequency,
typical values.
September 1991
11
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV58
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT289A
D
A
F
5
U
1
B
q
C
w
H
M
C
2
1
c
1
2
H
U
2
p
E
w
M
A
B
1
A
3
4
w
b
M
Q
3
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
E
e
F
H
H
p
Q
q
U
U
w
w
w
3
UNIT
mm
1
1
2
1
2
3.33
3.07
4.65
3.92
13.10 11.53
12.90 11.33
1.65 19.81 4.85
1.40 19.05 4.34
3.43
3.17
2.31
2.06
28.07 11.81
27.81 11.56
0.10
0.05
21.44
0.844
0.51
0.02
1.02 0.25
0.04 0.01
4.60
0.181
0.131
0.121
0.183
0.154
0.516 0.454
0.508 0.446
0.065 0.780
0.055 0.750
0.135 0.091
0.125 0.081
0.465
0.455
0.004
0.002
0.191
0.171
1.105
1.095
inches
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT289A
97-06-28
September 1991
12
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV58
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1991
13
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