BLV857 [NXP]
UHF linear push-pull power transistor; UHF线性推挽功率晶体管
| 型号： | BLV857 |
| 厂家： | 
NXP |
| 描述： | UHF linear push-pull power transistor |
| 文件： | 总12页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV857
UHF linear push-pull power
transistor
1997 Jan 16
Product specification
Supersedes data of 1995 Oct 04
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV857
FEATURES
PINNING SOT324B
• Internal input matching for an optimum wideband
PIN
SYMBOL
DESCRIPTION
capability and high gain
1
2
3
4
5
c1
c2
b1
b2
e
collector 1
• Polysilicon emitter ballasting resistors for an optimum
temperature profile
collector 2
base 1
• Gold metallization ensures excellent reliability.
base 2
common emitters
APPLICATION
• Common emitter class-A operation in linear
transposers/transmitters (television) in the
470 to 860 MHz frequency band.
c1
handbook, halfpage
1
2
4
b1
b2
DESCRIPTION
e
NPN silicon planar transistor with two sections in push-pull
configuration. The device is encapsulated in a SOT324B
4-lead rectangular flange package with a ceramic cap. The
common emitters are connected to the flange.
5
3
c2
MAM217
Top view
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter push-pull test circuit.
f
VCE
(V)
ICQ
(A)
Po sync
(W)
Gp
(dB)
MODE OF OPERATION
(MHz)
CW class-A
860
25
2 × 1.1
≥10(1)
≥10(1)
Note
1. Three-tone test signal (−8, −16 and −10 dB); dim = −54 dB.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Jan 16
2
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV857
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
60
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
−
−
−
−
−
−
V
V
V
A
A
open base
28
open collector
2.5
7.4
7.4
80
collector current (DC)
average collector current
total power dissipation
storage temperature
IC(AV)
Ptot
Tmb = 70 °C; note 1; see Fig.2
W
Tstg
Tj
−65
+150
200
°C
°C
operating junction temperature
−
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
PARAMETER
CONDITIONS
VALUE
1.6
UNIT
thermal resistance from junction to mounting-base Ptot = 80 W; Tmb = 70 °C note 1
K/W
K/W
Rth mb-h
thermal resistance from mounting-base to heatsink note 1
0.4
Note to Limiting values and Thermal characteristics
1. Total device; both sections equally loaded.
MBH754
200
handbook, halfpage
P
tot
(W)
160
120
(1)
80
(2)
40
0
0
40
80
120
160
(°C)
T
mb
(1) Short-time operation during mismatch.
(2) Continuous operation.
Fig.2 Power derating curve.
1997 Jan 16
3
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV857
CHARACTERISTICS
Values apply to either transistor section; Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)CBO collector-base breakdown voltage
V(BR)CEO collector-emitter breakdown voltage IC = 30 mA; IB = 0
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IC = 15 mA; IE = 0
60
28
2.5
−
−
−
V
−
−
V
V(BR)EBO emitter-base breakdown voltage
IE = 0.6 mA; IC = 0
−
−
V
ICBO
ICEO
hFE
Cc
collector-base leakage current
collector-emitter leakage current
DC current gain
VCB = 27 V; VBE = 0
VCE = 20 V
−
1.5
3
mA
mA
−
−
VCE = 25 V; IC = 1.1 A; see Fig.3
30
−
−
140
−
collector capacitance
VCB = 25 V; IE = ie = 0; f = 1 MHz;
see Fig.4
18
pF
pF
Cre
feedback capacitance
VCE = 25 V; IC = 0; f = 1 MHz
−
11
−
MBH756
MBH755
160
40
handbook, halfpage
handbook, halfpage
C
c
(pF)
h
FE
120
80
30
20
10
0
40
0
0
1
2
3
0
10
20
30
40
I
(A)
V
(V)
CB
c
VCE = 25 V; tp = 500 µs; δ = <1 %.
IE = ie = 0; f = 1 MHz.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Collector capacitance as a function of
collector-base voltage; typical values.
1997 Jan 16
4
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV857
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common emitter push-pull class-A test circuit.
f
VCE
(V)
ICQ
(A)
Po sync
(W)
Gp
(dB)
dim
(dB)
MODE OF OPERATION
(MHz)
CW class-A
CW class-A
860
860
25
25
2 × 1.1
2 × 1.1
≥10(1)
≥10(2)
≥10(1)
≥10(2)
≤−54(1)
≤−51(2)
Notes
1. Three-tone test method: fvision = 855.25 MHz (vision carrier −8 dB); fsound = 860.75 MHz (sound carrier −10 dB);
fsideband = 859.68 MHz (sideband signal −16 dB); 0 dB corresponds to peak sync level.
2. Three-tone test method: fvision = 855.25 MHz (vision carrier −8 dB); fsound = 860.75 MHz (sound carrier −7 dB);
fsideband = 859.68 MHz (sideband signal −16 dB); 0 dB corresponds to peak sync level.
Ruggedness in class-A operation
The BLV857 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
conditions: VCE = 25 V; ICQ = 2 × 1.1 A; f = 860 MHz; Th = 25 °C; Po sync = 10 W.
MBH757
MBH758
50
14
handbook, halfpage
handbook, halfpage
P
G
o sync
p
(W)
(dB)
12
40
(1)
(2)
(1)
(2)
30
20
10
10
8
6
0
0
0
2
4
6
20
40
60
P
(W)
P
(W)
o sync
i sync
VCE = 25 V; ICQ = 2 × 1.1 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) h = 25 °C.
VCE = 25 V; ICQ = 2 × 1.1 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) h = 25 °C.
T
T
(2) Th = 70 °C.
(2) Th = 70 °C.
Fig.5 Output power as a function of input power;
typical values.
Fig.6 Power gain as a function of output power;
typical values.
1997 Jan 16
5
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV857
MBH759
MBH760
−40
−30
handbook, halfpage
handbook, halfpage
d
d
im
im
(dB)
(dB)
−40
(2)
(1)
−45
−50
−60
−70
−50
−55
(1)
(2)
−80
−60
0
20
40
60
1.4
1.8
2.2
2.6
3
I
(A)
P
(W)
C
o sync
VCE = 25 V; ICQ = 2 × 1.1 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
VCE = 25 V; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) Th = 70 °C.
(1) Th = 70 °C.
(2) Th = 25 °C.
(2) Th = 25 °C.
Fig.7 Intermodulation distortion as a function of
output power; typical values.
Fig.8 Intermodulation distortion as a function of
collector current; typical values.
1997 Jan 16
6
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV857
BM7H64
a n d b o o k , f u l l p a g e w i d t h
1997 Jan 16
7
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV857
115
55
T1
R3
C1
R2
P1
T2
C5
C6
V
CC
L17
R4
C3
C4
B2
B1
C2
R1
L7
C15
C25 & C26
L13
C8
C30
L9
L11
L1 & L2
C11
C12
C21 & C22
C7
C9
L5
L3
R5
50 Ω
input
50 Ω
output
C29
BLV857
C20
R6
L12
L10
C31
L4
L14
C14
C13
L6
L15
&
L16
C23 & C24
C27 & C28
C10
L8
MBH765
wire jumper
inner lead and outer lead are shorted (each balun).
Dimensions in mm.
The components are situated on one side of the copper-clad epoxy fibre-glass board, the other side is unetched and serves
as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.10 Printed-circuit board and component lay-out for 860 MHz class-A test circuit.
8
1997 Jan 16
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV857
List of components
COMPONENT
DESCRIPTION
VALUE
10 nF
DIMENSIONS CATALOGUE No.
C1, C2, C3, C5, C6, multilayer ceramic chip capacitor
C7, C8, C9, C10
805
2222 590 16627
C4
solid aluminium capacitor
47 µF; 25 V
2222 030 36479
2222 591 16641
C11, C12, C13,
C14, C30, C31
multilayer ceramic chip capacitor
100 nF
1206
C15
C20
C21
solid aluminium capacitor
10 µF; 63 V
2222 030 38109
multilayer ceramic chip capacitor; note 1 18 pF
multilayer ceramic chip capacitor; note 1 3 pF
C22, C24, C26, C28 Tekelec Giga trim 37271; note 3
0.6 to 4.5 pF
C23
C25
multilayer ceramic chip capacitor; note 1 7.5 pF
multilayer ceramic chip capacitor;
notes 1 and 3
11 pF
C27
multilayer ceramic chip capacitor;
notes 1 and 3
9.1 pF
C29
multilayer ceramic chip capacitor; note 1 100 pF
L1, L2, L15, L16
L3, L4
L5, L6
L7, L8
L9, L10
L11, L12
L13, L14
L17
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; notes 2 and 4
Semi rigid coax balun UT70-25
SMD resistor
50 Ω
30.6 × 2 mm
10 × 2 mm
3 × 5 mm
50 Ω
26.5 Ω
15 Ω
3 × 10 mm
6 × 0.5 mm
3 × 3 mm
104 Ω
38.8 Ω
50 Ω
22.5 × 2 mm
120 × 1 mm
76.2 Ω
B1, B2
R1
Z = 25 Ω ±1.5 Ω 70 mm
220 Ω
1.8 Ω
4.3 kΩ
33 Ω
805
805
805
805
805
2322 734 22201
2322 734 21808
2322 734 24302
2322 734 23309
2322 734 23308
R2
SMD resistor
R3
SMD resistor
R4
SMD resistor
R5, R6
P1
SMD resistor
3.3 Ω
2 kΩ
potentiometer
T1
NPN transistor
BD139
BCV62
9330 912 20112
5322 130 60505
T2
double PNP transistor
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board: Rogers ULTRALAM 2000 (B0300M1046QB)
(εr = 2.55); thickness 0.76 mm.
3. Position of C25 and C26: distance of centre capacitor to transistor BLV857 = 7.5 mm.
Position of C27 and C28: distance of centre capacitor to balun B2 = 1.5 mm.
4. The sense resistor on the bias unit is implemented as a stripline L17, in this way we obtain a small sense resistor
(approximately 80 mΩ) which can handle the dissipated power.
1997 Jan 16
9
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV857
MBH762
MBH761
10
5
handbook, halfpage
handbook, halfpage
Z
Z
L
i
(Ω)
(Ω)
8
4
x
i
R
X
L
6
4
2
3
2
r
i
L
1
0
0
400
600
800
1000
400
600
800
1000
f (MHz)
f (MHz)
VCE = 25 V; ICQ = 2 × 1.1 A; Po sync = 10 W (total device); Th = 25 °C.
VCE = 25 V; ICQ = 2 × 1.1 A; Po sync = 10 W (total device); Th = 25 °C.
Fig.11 Input impedance (per section) as a function
of frequency (series components);
typical values.
Fig.12 Load impedance (per section) as a function
of frequency (series components);
typical values.
MBH763
20
handbook, halfpage
G
p
(dB)
16
handbook, halfpage
12
8
Z
i
Z
MBA451
L
4
0
400
600
800
1000
f (MHz)
VCE = 25 V; ICQ = 2 × 1.1 A; Po sync = 10 W (total device); Th = 25 °C.
Fig.13 Gain as a function of frequency;
typical values.
Fig.14 Definition of transistor impedance.
1997 Jan 16
10
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV857
PACKAGE OUTLINE
19.03
18.77
8.26
8.0
1.66
1.39
0.1
5.0
max
2.32
2.20
14.22
2
1
5.59
4.57
3.43 6.43
3.17 6.17
5
5.59
4.57
3
4
MSA451
1.66
1.39
(3x)
Dimensions in mm.
Recommended screw: cheese-head 4-40 UNC/2A. Torque on screw: min. 0.6 Nm; max. 0.75 Nm.
Heatsink compound must be applied sparingly and evenly distributed.
Fig.15 SOT324B.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jan 16
11
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© Philips Electronics N.V. 1997
SCA53
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Printed in The Netherlands
127067/0/02/pp12
Date of release: 1997 Jan 16
Document order number: 9397 750 01381
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