BLV97CE [NXP]
UHF power transistor; 超高频功率晶体管
| 型号： | BLV97CE |
| 厂家： | 
NXP |
| 描述： | UHF power transistor |
| 文件： | 总11页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV97CE
UHF power transistor
March 1993
Product specification
Philips Semiconductors
Product specification
UHF power transistor
BLV97CE
FEATURES
DESCRIPTION
• Internal input matching to achieve high power gain
• Ballasting resistors for an optimum temperature profile
• Gold metallization ensures excellent reliability
NPN silicon planar epitaxial transistor in a SOT171
envelope, intended for common emitter, class-AB
operation in radio transmitters for the 960 MHz
communications band. The transistor has a 6-lead flange
envelope, with a ceramic cap. All leads are isolated from
the flange.
QUICK REFERENCE DATA
RF performance up to Th = 25 °C in a common emitter class-AB circuit.
MODE OF OPERATION f (MHz) CE (V)
c.w. class-AB
V
PL (W)
35
GP (dB)
> 7
ηc (%)
> 50
960
24
PINNING - SOT171A
PIN
SYMBOL
DESCRIPTION
handbook, halfpage
2
1
4
3
6
5
c
1
2
3
4
5
6
e
e
b
c
e
e
emitter
emitter
base
b
e
collector
emitter
emitter
MAM141
Top view
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
March 1993
2
Philips Semiconductors
Product specification
UHF power transistor
BLV97CE
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
VCBO
PARAMETER
collector base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
−
−
−
−
−
50
27
V
V
V
A
A
VCEO
VEBO
IC
collector emitter voltage
emitter base voltage
collector current
open base
open collector
DC or average
3.5
3
9
ICM
collector current
peak value
f > 1 MHz
Ptot
total power dissipation
f > 1 MHz
−
70
W
Tmb = 25 °C
Tstg
Tj
storage temperature
−65
150
200
°C
°C
operating junction temperature
−
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
2.3
UNIT
Rthj-mb
from junction to mounting base (RF)
from mounting base to heatsink
−
−
K/W
K/W
Rth mb-h
0.4
MDA441
MDA442
10
100
handbook, halfpage
handbook, halfpage
P
tot
(W)
80
I
C
T
= 25 °C
mb
(A)
II
I
T
= 70 °C
h
60
40
1
20
−1
10
0
0
2
1
10
10
40
80
120
160
V
(V)
T
h
(°C)
CE
Fig.2 DC SOAR.
Fig.3 Power/temperature derating;
I: DC or RF operation;
II: short-term operation during mismatch.
March 1993
3
Philips Semiconductors
Product specification
UHF power transistor
BLV97CE
CHARACTERISTICS
at Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter
IC = 50 mA
50
−
−
V
V
V
V(BR)CEO
V(BR)EBO
ICES
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
open base
IC = 100 mA
27
3.5
−
−
−
−
−
open collector
IE = 10 mA
VBE = 0
VCE = 27 V
−
10
−
mA
hFE
DC current gain
IC = 2 A
VCE = 20 V
15
−
−
Cc
collector capacitance at f = 1 MHz
feedback capacitance at f = 1 MHz
collector-flange capacitance
IE = Ie = 0
44
30
2
−
pF
pF
pF
V
CB = 25 V
Cre
IC = 0
VCE = 25 V
−
−
Ccf
−
−
MDA443
MDA444
100
100
handbook, halfpage
handbook, halfpage
C
c
h
FE
(pF)
80
V
= 25 V
CE
80
20 V
60
40
20
60
40
20
0
0
0
0
2
4
6
8
10
20
30
I
(A)
V
(V)
CB
C
Fig.4 DC current gain as a function of collector
current; typical values.
Fig.5 Output capacitance as a function of
collector-base voltage; typical values.
March 1993
4
Philips Semiconductors
Product specification
UHF power transistor
BLV97CE
APPLICATION INFORMATION
RF performance in a common emitter test circuit.
Th = 25 °C, Rth mb-h = 0.4 K/W unless otherwise specified.
MODE OF OPERATION
f (MHz)
960
VCE (V)
IC(ZS) (mA)
60
PL (W)
35
GP (dB)
ηc (%)
> 50
c.w. class-AB
24
> 7
typ. 8.5
typ. 55
MDA446
MDA445
50
60
12
handbook, halfpage
handbook, halfpage
P
G
p
L
(W)
40
η
G
p
(%)
(dB)
40
20
0
8
30
20
η
4
0
10
0
0
2
4
6
8
0
10
20
30
40
P (W)
S
P
(W)
L
Fig.6 Power gain and efficiency as a function of
load power; typical values.
Fig.7 Load power as a function of input power;
typical values.
Ruggedness in class-AB operation
The BLV97CE is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases, under
the following conditions: VCE = 24 V; IC(ZS) = 120 mA;
f = 960 MHz at rated output power.
March 1993
5
Philips Semiconductors
Product specification
UHF power transistor
BLV97CE
L6
L7
V
B
V
CC
C8
C7
C6
C11
C13
C10
C9
L5
L8
R1
R2
D.U.T.
C15
L11
L4
L9
L1
L2
L3
L10
L12
C1
C18
50 Ω
50 Ω
input
output
C2
C3
C4
C5
C12
C14
C16
C17
MDA447
Fig.8 Test circuit BLV97CE class-AB.
March 1993
6
Philips Semiconductors
Product specification
UHF power transistor
BLV97CE
List of components (Fig.9)
DESIGNATION
DESCRIPTION
VALUE
33 pF
DIMENSIONS CATALOGUE NO.
C1, C18
multilayer ceramic chip capacitor
note 1
C2, C3, C16,
C17
film dielectric trimmer
1.4 to 5.5 pF
3.3 pF
2222 809 09001
C5, C6
multilayer ceramic chip capacitor
note 2
C7, C11
multilayer ceramic chip capacitor
note 1
10 pF
C8
multilayer ceramic chip capacitor
35 V solid aluminium capacitor
multilayer ceramic chip capacitor
100 nF
C9
2.2 µF
2222 128 50228
C10
3 × 100 nF
in parallel
C12, C13
C14, C15
L1, L12
L2, L3
L4
multilayer ceramic chip capacitor
note 2
12 pF
3.3 pF
50 Ω
multilayer ceramic chip capacitor
note 1
microstrip
note 3
26 × 2.4 mm
9.5 × 2.4 mm
6.0 × 3.0 mm
microstrip
note 3
50 Ω
microstrip
note 3
42.6 Ω
30 nH
L5
3 turns enamelled 1 mm copper wire
int. dia. 4 mm
length 3 mm
leads 2 × 5 mm
L6, L7
L8
grade 3B ferroxcube wide-band RF
choke
4312 020 36642
4 turns enamelled 1 mm copper wire
45 nH
int. dia. 4 mm
length 4 mm
leads 2 × 5 mm
L9
microstrip
note 3
42.6 Ω
50 Ω
50 Ω
10 Ω
4.0 × 3.0 mm
9.0 × 2.4 mm
13.5 × 2.4 mm
2322 153 51009
L10
L11
microstrip
note 3
microstrip
note 3
R1, R2
1 W metal film resistor
Notes
1. ATC capacitor type 100B or capacitor of the same quality.
2. ATC capacitor type 100A or capacitor of the same quality.
3. The microstrips are on a double copper-clad PCB with PTFE fibre-glass dielectric (εr = 2.2); thickness 1⁄32 inch.
March 1993
7
Philips Semiconductors
Product specification
UHF power transistor
BLV97CE
130 mm
copper straps
copper straps
rivets
rivets
70 mm
rivets
rivets
copper straps
copper straps
L6
L7
C7
C6
C11
C10
C9
R1
R2
L8
L5
C8
C13
C12
C15
L11
C14
C1
C18
L12
L1
L2
C4
L3
C5
L4 L9
L10
C16
C2
C3
C17
MDA448
The circuit and components are located on one side of the PTFE fibre-glass board, the other side
being fully metallized, to serve as an earth. Earth connections are made by fixing screws, hollow
rivets and copper straps around the board and under the emitters, to provide a direct contact
between the component side and the ground plane.
Fig.9 Printed circuit board and component layout for 960 MHz test circuit.
March 1993
8
Philips Semiconductors
Product specification
UHF power transistor
BLV97CE
MRA176
MRC177
10
4
handbook, halfpage
handbook, halfpage
Z
Z
L
i
(Ω)
(Ω)
X
i
8
3
6
4
2
1
0
R
X
L
R
i
2
0
L
−1
800
800
850
900
950
1000
850
900
950
1000
f (MHz)
f (MHz)
Fig.10 Input impedance; series components;
VCE = 24 V; PL = 35 W; Rth mb-h = 0.4 K/W;
typical values.
Fig.11 Load impedance; series components;
VCE = 24 V; PL = 35 W; Rth mb-h = 0.4 K/W;
typical values.
MRC175
12
handbook, halfpage
G
P
(dB)
8
4
0
800
850
900
950
1000
f (MHz)
Fig.12 Power gain; class-AB operation;
VCE = 24 V; PL = 35 W; Rth mb-h = 0.4 K/W;
typical values.
March 1993
9
Philips Semiconductors
Product specification
UHF power transistor
BLV97CE
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 6 leads
SOT171A
D
A
F
B
D
1
U
1
q
C
w
M
H
1
C
2
c
b
1
2
1
4
6
E
H
E
U
1
2
3
5
w
p
A
M
A
B
1
Q
w
b
M
3
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
b
D
D
E
E
e
F
H
H
p
Q
q
U
U
w
w
w
3
UNIT
1
1
1
1
1
2
1
2
2.15 3.20
1.85 2.89
6.81
6.07
9.25 9.30 5.95 6.00
9.04 8.99 5.74 5.70
3.05 11.31 9.27 3.43 4.32
2.54 10.54 9.01 3.17 4.11
24.90 6.00
24.63 5.70
0.16
0.07
18.42
0.725
0.51 1.02 0.26
0.02 0.04 0.01
mm
3.58
0.085 0.126
0.073 0.114
0.268
0.239
0.364 0.366 0.234 0.236
0.356 0.354 0.226 0.224
0.120 0.445
0.100 0.415
0.135 0.170
0.125 0.162
0.236
0.224
0.006
0.003
0.365
0.355
0.980
0.970
inches
0.140
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT171A
97-06-28
March 1993
10
Philips Semiconductors
Product specification
UHF power transistor
BLV97CE
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
March 1993
11
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