BR100/03/T/R [NXP]

36V, DIAC, DO-35;


型号：	BR100/03/T/R
厂家：	NXP
描述：	36V, DIAC, DO-35 数据判读及分析中心
文件：	总3页 (文件大小：16K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Philips Semiconductors

Product Specification

Silicon Bi-directional Trigger Device

BR100/03

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Silicon bidirectional trigger device in a

glass envelope intended for use in

triac and thyristor trigger circuits.

SYMBOL PARAMETER

MIN. MAX. UNIT

V_(BO)

V_O

Breakover voltage

Output voltage

I_FRM

Repetitive peak forward current

OUTLINE - SOD27

SYMBOL

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

I_FRM

Repetitive peak forward

current

Total power dissipation

Storage temperature

Operating junction

temperature

t ≤ 10 µs, T_a≤ 50˚C; f = 60 Hz

P_tot

T_stg

T_j

T_a= 50˚C

-55

150

125

100

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-a}

Thermal resistance junction to in free air

330

150

K/W

ambient

R_{th j-lead}

Thermal resistance junction to

leads

CHARACTERISTICS

T_a= 25 ˚C unless otherwise stated.

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_(BO)

Breakover voltage

I = I_(BO)

3.5

|V_(BO)+| - |V_(BO)-

Breakover voltage symmetry I = I_(BO), see fig: 1

V_O

I_(BO)

dV_(BO)/dT

Output voltage

Breakover current

Temperature coefficient of

V_(BO)

R_L= 20 Ω; Circuit of fig: 2

V = V_(BO)

µA

%/K

0.1

t_r

Risetime

I_p= 0.5 A; Circuit of fig: 2

1.5

µs

February 1996

Rev 1.100

Philips Semiconductors

Product Specification

Silicon Bi-directional Trigger Device

BR100/03

VBO

D.U.T.

500k

10k

I(BO)I

V(BO)III

I(BO)III

100nF

V(BO)I

10R

230 V, RMS, 50Hz

Set load resistance

to 20 Ohms when

measuring output voltage

50R

Adjust for Ip=0.5A

when measuring risetime

Fig.1. Current-voltage characteristics

Fig.2. Test circuit for output voltage and risetime.

MECHANICAL DATA

Dimensions in mm

4.5

max

0.56

max

1.95

max

min

Fig.3. SOD27.

February 1996

Rev 1.100

Philips Semiconductors

Product Specification

Silicon Bi-directional Trigger Device

BR100/03

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1997

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

February 1996

Rev 1.100

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