BR211SM-240 [NXP]

Breakover diodes; 击穿二极管


型号：	BR211SM-240
厂家：	NXP
描述：	Breakover diodes 击穿二极管触发装置二极管击穿二极管光电二极管
文件：	总6页 (文件大小：34K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Philips Semiconductors

Preliminary specification

Breakover diodes

BR211SM series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

A range of bidirectional, breakover

diodes in a two terminal, surface

mounting, plastic envelope. These

devices feature controlled breakover

voltage and high holding current

together with high peak current

SYMBOL

PARAMETER

MIN.

MAX. UNIT

BR211SM-140 to BR211SM-280

Breakover voltage

Holding current

Non-repetitive peak current

V_(BO)

I_H

I_TSM

140

150

280

handling

capability.

Typical

application is transient overvoltage

protection in telecommunications

equipment.

OUTLINE - SOD106

SYMBOL

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_D

Continuous voltage

Non repetitive peak current

75% of

V_(BO)typ

I_TSM1

10/320 µs impulse equivalent to

10/700 µs, 1.6 kV voltage impulse

(CCITT K17)

I_TSM2

Non repetitive on-state current half sine wave; t = 10 ms;

T_j= 70 ˚C prior to surge

I²t

dI_T/dt

I²t for fusing

t_p= 10 ms

1.1

A²s

A/µs

Rate of rise of on-state current t_p= 10 µs

after V_(BO)turn-on

P_tot

P_TM

T_stg

T_a

Continuous dissipation

Peak dissipation

T_a= 25˚C

t_p= 1 ms; T_a= 25˚C

1.2

˚C

Storage temperature

- 40

150

Operating ambient temperature off-state

Overload junction temperature on-state

T_vj

150

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-sp}

R_{th j-a}

Z_{th j-a}

Thermal resistance junction to

solder point

K/W

Thermal resistance junction to pcb mounted; minimum footprint

100

2.62

ambient

Thermal impedance junction to t_p= 1 ms

ambient

August 1996

Rev 1.100

Philips Semiconductors

Preliminary specification

Breakover diodes

BR211SM series

STATIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_TM

On-state voltage

I_TM= 2 A

2.5

V_(BR)

V_(BO)

Avalanche voltage (min)

Breakover voltage (max)

I_(BR)= 10_mA

I ≤ I_S, t_p= 100 µs

BR211SM-140

BR211SM-160

BR211SM-180

BR211SM-200

BR211SM-220

BR211SM-240

BR211SM-260

BR211SM-280

123

140

158

176

193

211

228

246

140

160

180

200

220

240

260

280

+0.1

157

180

202

224

247

269

292

314

S_(br)

Temperature coefficient of V_(BR)

Holding current

%/K

µA

I_H

T_j= 25˚C

150

100

T_j= 70˚C

I_S4

Switching current

Off-state current

t_p= 100 µs

200

1000

I_D

V_D= 85% V_(BR)min, T_j= 70˚C

DYNAMIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

dV_D/dt

Linear rate of rise of off-state

voltage that will not trigger any

device

V_(DM)= 85% V_(BR)min; T_j= 70 ˚C

2000 V/µs

C_j

Off-state capacitance

V_D= 0 V; f = 1 kHz to 1 MHz

100 pF

current

ITSM

100%

90%

V(BR)

I(BR)

V(BO)

50%

30%

voltage

time

Symbol

10us

700us

Symmetric BOD

Fig.1. Definition of breakover diode characteristics.

Fig.2. Test waveform for high voltage impulse (I_TSM1

)

according to CCITT vol IX-Rec K17.

1 Measured under pulsed conditions to avoid excessive dissipation

2 The minimum current at which the diode will remain in the on-state

3 The avalanche current required to switch the diode to the on-state

4 Measured at maximum recommended continuous voltage. Relative humidity < 65%.

August 1996

Rev 1.100

Philips Semiconductors

Preliminary specification

Breakover diodes

BR211SM series

BR211

ITSM / A

ID / uA

100

ITSM2

time

max

0.1

-20

Tj / C

100

-40

100

1000

10000

Number of impulses

Fig.3. Maximum permissible non-repetitive on-state

current based on sinusoidal currents; f = 50 Hz;

device triggered at the start of each pulse; T_j= 70˚C

prior to surge.

Fig.6. Maximum off-state current as a function of

temperature.

V(BR)(Tj)

V(BR)(25 C)

IS / A

1.06

1.04

1.02

1.00

0.98

0.96

0.94

0.92

0.90

max

typ

0.1

0.01

min

0.001

100

150

-50

-20

100

-40

Tj / C

Fig.4. Normalised avalanche breakdown voltage V_(BR)

and V_(BO)as a function of temperature.

Fig.7. Switching current as a function of junction

temperature.

IT / A

IH / A

Tj = 25 C

Tj = 150 C

min

max

typ

0.1

0.01

0.001

100

150

-50

VT / V

Tj / C

Fig.5. On-state current as a function of on-state

voltage; t_p= 200 µs to avoid excessive dissipation.

Fig.8. Minimum holding current as a function of

temperature.

August 1996

Rev 1.100

Philips Semiconductors

Preliminary specification

Breakover diodes

BR211SM series

Cj / pF

100

BR211

Zth / (K/W)

1000

100

BR211-140

typ

BR211-280

0.1

0.1s

tp / s

10s

1000s

10us

1ms

1000

100

VD / V

Fig.9. Typical junction capacitance as a function of

off-state voltage, f = 1 MHz; T_j= 25˚C.

Fig.10. Transient thermal impedance. Z_{th j-a}= f(t_p).

August 1996

Rev 1.100

Philips Semiconductors

Preliminary specification

Breakover diodes

BR211SM series

MECHANICAL DATA

Dimensions in mm

Net Mass: 0.2 g

5.5

5.1

4.5

4.3

2.3

2.0

0.2

3.3

2.7

0.05

2.8 1.6

2.4 1.4

Fig.11. SOD106.

Notes

1. For mounting and soldering instructions refer to publication SC18 "SMD Footprint Design and Soldering

Guidelines". Order code:9397 750 00505.

August 1996

Rev 1.100

Philips Semiconductors

Preliminary specification

Breakover diodes

BR211SM series

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1996

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

August 1996

Rev 1.100

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