BRS212 [NXP]

Breakover diodes; 击穿二极管


型号：	BRS212
厂家：	NXP
描述：	Breakover diodes 击穿二极管二极管击穿二极管
文件：	总6页 (文件大小：35K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Philips Semiconductors

Product specification

Breakover diodes

BRS212 series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

A range of bidirectional, breakover

diodes in a two terminal, surface

mounting, plastic envelope. These

devices feature controlled breakover

voltage and high holding current

together with high peak current

handling capability. Their intended

application is protection of line based

SYMBOL PARAMETER

MIN. TYP. MAX. UNIT

V_(BO)

Breakover voltage

BRS212-140

140

160

180

200

220

240

260

280

BRS212-160

BRS212-180

BRS212-200

BRS212-220

telecommunications

equipment

BRS212-240

against voltage transients.

BRS212-260

BRS212-280

150

I_H

Holding current

Non-repetitive peak pulse

current (CCITT K17)

I_PP

OUTLINE - SOD106

SYMBOL

date code

XXX denotes voltage grade

212

XXX

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_D

Continuous voltage

BRS212-140

105

120

135

150

165

180

195

210

BRS212-160

BRS212-180

BRS212-200

BRS212-220

BRS212-240

BRS212-260

BRS212-280

I_PP

Non-repetitive peak pulse

current

5/310 µs impulse equivalent to

10/700 µs, 1.6 kV voltage impulse

(CCITT K17)

I_TSM

Non repetitive surge peak

on-state current

half sine wave; t = 10 ms;

T_j= 70 ˚C prior to surge

t_p= 10 ms

I²t

dI_T/dt

I²t for fusing

1.1

A²s

A/µs

Rate of rise of on-state current t_p= 10 µs

after V_(BO)turn-on

P_tot

Continuous dissipation on

infinite heatsink

T_sp= 50˚C

P_TM

T_stg

T_j

Peak dissipation

t_p= 1 ms; T_a= 25˚C

˚C

Storage temperature

Operating junction temperature

- 40

150

260

T_L

Maximum terminal temperature soldering time = 10 s

for soldering

January 1997

Rev 1.000

Philips Semiconductors

Product specification

Breakover diodes

BRS212 series

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-sp}

R_{th j-a}

Z_{th j-a}

Thermal resistance junction to

K/W

solder point

Thermal resistance junction to pcb mounted; minimum footprint

100

2.6

ambient

Thermal impedance junction to t_p= 1 ms

ambient

ELECTRICAL CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

TYPE

PARAMETER

Marking

Avalanche

voltage

Breakover

voltage

Off-state current

Critical rate of

rise of off-state

voltage

Conditions

I_BR= 10 mA

I_D≤ I_S

t_p= 100 µs

T_j= 70˚C;

RH ≤ 65%

T_j= 70˚C

Symbol

Limits

Units

V_BR

V_BO

I_D@ V_D

max

dV_D/dt @ V_DM

max

min

typ

max

µA

V/µs

BRS212-140

BRS212-160

BRS212-180

BRS212-200

BRS212-220

BRS212-240

BRS212-260

BRS212-280

212-140

212-160

212-180

212-200

212-220

212-240

212-260

212-280

123

140

158

176

193

211

228

246

140

160

180

200

220

240

260

280

140

160

180

200

220

240

260

280

157

180

202

224

247

269

292

314

105

120

135

150

165

180

195

210

2000

105

120

135

150

165

180

195

210

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_T

I_H

On-state voltage

Holding current¹

I_TM= 2 A; t_p= 200 µs

T_j= 25˚C

2.5

150

100

%/K

T_j= 70˚C

1000

I_S

S_(BR)

Switching current²

t_p= 100 µs

200

+0.1

Temperature coefficient of

avalanche voltage

C_j

Junction capacitance

V_D= 0 V, f = 1 kHz to 1 MHz

100

1 The minimum current at which the diode will remain in the on-state

2 The avalanche current required to switch the diode to the on-state.

January 1997

Rev 1.000

Philips Semiconductors

Product specification

Breakover diodes

BRS212 series

V(BR)(Tj)

V(BR)(25 C)

current

1.06

1.04

1.02

1.00

0.98

0.96

0.94

0.92

0.90

V(BR)

I(BR)

V(BO)

voltage

Symbol

Symmetric BOD

-20

100

-40

Tj / C

Fig.1. Definition of breakover diode characteristics.

Fig.4. Normalised avalanche breakdown voltage V_(BR)

and V_(BO)as a function of temperature.

IT / A

current

Tj = 25 C

Tj = 150 C

100%

90%

max

typ

50%

30%

time

5us

310us

VT / V

Fig.2. Test waveform for high voltage impulse (I_PP)

according to CCITT vol IX-Rec K17.

Fig.5. On-state current as a function of on-state

voltage; t_p= 200 µs to avoid excessive dissipation.

BR211

ITSM / A

ID / uA

100

ITSM

time

max

0.1

-20

Tj / C

100

-40

100

1000

10000

Number of impulses

Fig.3. Maximum permissible non-repetitive on-state

current based on sinusoidal currents; f = 50 Hz;

device triggered at the start of each pulse; T_j= 70˚C

prior to surge.

Fig.6. Maximum off-state current as a function of

temperature.

January 1997

Rev 1.000

Philips Semiconductors

Product specification

Breakover diodes

BRS212 series

Cj / pF

IS / A

100

0.1

BR211-140

BR211-280

max

typ

0.01

0.001

min

100

150

-50

1000

100

VD / V

Tj / C

Fig.7. Switching current as a function of junction

temperature.

Fig.9. Typical junction capacitance as a function of

off-state voltage, f = 1 MHz; T_j= 25˚C.

BR211

IH / A

Zth / (K/W)

1000

100

min

0.1

0.01

0.001

0.1

0.1s

tp / s

10s

1000s

100

150

10us

1ms

-50

Tj / C

Fig.8. Minimum holding current as a function of

temperature.

Fig.10. Transient thermal impedance. Z_{th j-a}= f(t_p).

January 1997

Rev 1.000

Philips Semiconductors

Product specification

Breakover diodes

BRS212 series

MECHANICAL DATA

Dimensions in mm

Net Mass: 0.2 g

5.5

5.1

4.5

4.3

2.3

2.0

0.2

3.3

2.7

0.05

2.8 1.6

2.4 1.4

Fig.11. SOD106.

Notes

1. For mounting and soldering instructions refer to publication SC18 "SMD Footprint Design and Soldering

Guidelines". Order code:9397 750 00505.

January 1997

Rev 1.000

Philips Semiconductors

Product specification

Breakover diodes

BRS212 series

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1997

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

January 1997

Rev 1.000

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