BSH111BK_技术文档

3

2

T

O

S

BSH111BK

55 V, N-channel Trench MOSFET

26 November 2014

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

2. Features and benefits

Low threshold voltage

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 3 kV HBM

•

3. Applications

Relay driver

•

High-speed line driver

Low-side loadswitch

Switching circuits

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

55

Unit

V

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-

-10

10

V

V_GS= 4.5 V; T_amb= 25 °C

V_GS= 4.5 V; T_sp= 25 °C

[1]

-

210

335

mA

Static characteristics

R_DSondrain-source on-state

V_GS= 4.5 V; I_D= 200 mA; T_j= 25 °C

-

2.3

4

Ω

resistance

Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm².

[1]

Scan or click this QR code to view the latest information for this product

NXP Semiconductors

BSH111BK

55 V, N-channel Trench MOSFET

5. Pinning information

Table 2.

Pinning information

Symbol Description

Simplified outline

Graphic symbol

3

D

1

2

3

G

S

D

gate

source

drain

G

1

2

TO-236AB (SOT23)

S

017aaa255

6. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BSH111BK

TO-236AB

plastic surface-mounted package; 3 leads

SOT23

7. Marking

Table 4.

Marking codes

Type number

Marking code

[1]

BSH111BK

%4T

[1] % = placeholder for manufacturing site code

BSH111BK

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Product data sheet

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BSH111BK

55 V, N-channel Trench MOSFET

8. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

55

Unit

V

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-

V_GS

-10

10

V

I_D

V_GS= 4.5 V; T_amb= 25 °C

V_GS= 4.5 V; T_amb= 100 °C

V_GS= 4.5 V; T_sp= 25 °C

T_amb= 25 °C; single pulse; t_p≤ 10 µs

T_amb= 25 °C

[1]

-

210

130

335

0.85

302

364

mA

A

-

I_DM

P_tot

peak drain current

-

total power dissipation

[2]

[1]

-

mW

-

T_sp= 25 °C

-

1449 mW

T_j

junction temperature

ambient temperature

storage temperature

-55

-65

150

°C

T_amb

T_stg

Source-drain diode

I_Ssource current

T_amb= 25 °C

[1]

-

200

mA

Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm².

[1]

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

017aaa123

017aaa124

120

P

der

(%)

I

der

(%)

80

40

0

- 75

0

- 75

- 25

25

75

125

175

- 25

25

75

125

175

T (°C)

j

T (°C)

j

Fig. 1. Normalized total power dissipation as a

function of junction temperature

Fig. 2. Normalized continuous drain current as a

function of junction temperature

BSH111BK

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Product data sheet

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NXP Semiconductors

BSH111BK

55 V, N-channel Trench MOSFET

aaa-015680

1

(1)

Limit R

= V /I

DS

DSon

D

I

D

(2)

(A)

-1

-2

-3

10

(3)

(4)

(5)

(6)

10

(7)

-1

2

10

1

10

V

(V)

DS

I_DM= single pulse

(1) t_p= 10 µs

(2) t_p= 100 µs

(3) t_p= 1 ms

(4) t_p= 10 ms

(5) DC; T_sp= 25 °C

(6) t_p= 100 ms

(7) DC; T_amb= 25 °C; drain mounting pad 1 cm²

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

9. Thermal characteristics

Table 6.

Symbol

Thermal characteristics

Parameter

Conditions

Min

Typ

351

271

Max

404

311

Unit

K/W

R_th(j-a)

thermal resistance

from junction to

ambient

in free air

[1]

[2]

-

R_th(j-sp)

thermal resistance

from junction to solder

point

-

65

75

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm².

BSH111BK

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Product data sheet

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NXP Semiconductors

BSH111BK

55 V, N-channel Trench MOSFET

aaa-014128

3

10

duty cycle = 1

Z

th(j-a)

(K/W)

0.75

0.50

0.25

0.33

0.20

2

10

0.10

0.05

0.02

0.01

0

10

-3

10

-2

-1

2

3

10

1

10

t

p

(s)

FR4 PCB, standard footprint

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

aaa-014129

3

10

Z

th(j-a)

(K/W)

duty cycle = 1

0.75

0.50

2

0.33

0.20

10

0.25

0.10

0.05

0.02

0.01

0

10

-3

10

-2

-1

2

3

10

1

10

t

p

(s)

FR4 PCB, mounting pad for drain 1 cm²

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

BSH111BK

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Product data sheet

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NXP Semiconductors

BSH111BK

55 V, N-channel Trench MOSFET

10. Characteristics

Table 7.

Symbol

Characteristics

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V_(BR)DSSdrain-source

breakdown voltage

I_D= 250 µA; V_GS= 0 V; T_j= 25 °C

55

-

V

V_GSth

gate-source threshold I_D= 250 µA; V_DS= V_GS; T_j= 25 °C

voltage

0.6

1

1.3

I_DSS

I_GSS

drain leakage current

gate leakage current

V_DS= 55 V; V_GS= 0 V; T_j= 25 °C

V_GS= 10 V; V_DS= 0 V; T_j= 25 °C

V_GS= -10 V; V_DS= 0 V; T_j= 25 °C

V_GS= 4.5 V; V_DS= 0 V; T_j= 25 °C

V_GS= -4.5 V; V_DS= 0 V; T_j= 25 °C

V_GS= 4.5 V; I_D= 200 mA; T_j= 25 °C

V_GS= 4.5 V; I_D= 200 mA; T_j= 150 °C

V_GS= 2.5 V; I_D= 75 mA; T_j= 25 °C

V_GS= 1.8 V; I_D= 30 mA; T_j= 25 °C

V_DS= 10 V; I_D= 200 mA; T_j= 25 °C

-

1

µA

Ω

-

5

-

-5

0.3

-0.3

4

-

R_DSon

drain-source on-state

resistance

2.3

4.7

2.7

4.8

0.64

8.1

5

Ω

-

Ω

g_fs

forward

-

S

transconductance

Dynamic characteristics

Q_G(tot)

Q_GS

Q_GD

C_iss

total gate charge

V_DS= 30 V; I_D= 200 mA; V_GS= 4.5 V;

T_j= 25 °C

-

0.5

-

nC

pF

gate-source charge

gate-drain charge

input capacitance

output capacitance

0.08

0.16

19.1

2.7

-

V_DS= 30 V; f = 1 MHz; V_GS= 0 V;

T_j= 25 °C

30

10

7

C_oss

C_rss

reverse transfer

capacitance

1.5

t_d(on)

t_r

t_d(off)

t_f

turn-on delay time

rise time

V_DS= 30 V; I_D= 200 mA; V_GS= 4.5 V;

R_G(ext)= 6 Ω; T_j= 25 °C

-

8.3

12

-

ns

8.4

turn-off delay time

fall time

12.6

4.8

16

-

Source-drain diode

V_SD

source-drain voltage

I_S= 200 mA; V_GS= 0 V; T_j= 25 °C

-

0.86

1.2

V

BSH111BK

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Product data sheet

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NXP Semiconductors

BSH111BK

55 V, N-channel Trench MOSFET

aaa-015681

aaa-015682

-3

-4

-5

-6

0.8

10

D

V

= 4.5 V

GS

I

D

(A)

3.0 V

I

(A)

0.6

2.6 V

2.4 V

(3)

(2)

(1)

10

0.4

0.2

0

2.2 V

10

1.8 V

3

0

1

2

4

0

0.5

1.0

1.5

2.0

V

(V)

V

(V)

GS

DS

T_j= 25 °C

T_j= 25 °C; V_DS= 5 V

(1) minimum values

(2) typical values

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

(3) maximum values

Fig. 7. Sub-threshold drain current as a function of

gate-source voltage

aaa-015683

aaa-015684

10

20

2.2 V

1.8 V

2 V

2.4 V

R

DSon

(Ω)

R

DSon

(Ω)

8

2.6 V

15

6

4

2

0

2.8 V

10

5

3 V

(1)

(2)

V

= 4.5 V

GS

0

0.2

0.4

0.6

0.8

0

2

4

6

8

10

(V)

I

D

(A)

V

GS

T_j= 25 °C

I_D= 0.2 A

(1) T_j= 150 °C

(2) T_j= 25 °C

Fig. 8. Drain-source on-state resistance as a function

of drain current; typical values

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

BSH111BK

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Product data sheet

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BSH111BK

55 V, N-channel Trench MOSFET

aaa-015685

aaa-015686

0.6

2.5

2.0

1.5

1.0

0.5

0

a

I

D

(A)

0.4

(2)

0.2

(1)

0

1

2

3

4

-60

0

60

120

180

V

(V)

T (°C)

j

GS

V_DS> I_D× R_DSon

(1) T_j= 25 °C

Fig. 11. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

(2) T_j= 150 °C

Fig. 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

aaa-015687

aaa-015688

2

2.0

10

V

GS(th)

(V)

C

(pF)

1.5

1.0

0.5

0

(1)

(2)

10

(3)

(2)

(3)

1

-1

10

2

-60

0

60

120

180

1

10

T (°C)

j

V

(V)

DS

I_D= 0.25 mA; V_DS= V_GS

(1) maximum values

(2) typical values

f = 1 MHz; V_GS= 0 V

(1) C_iss

(2) C_oss

(3) minimum values

(3) C_rss

Fig. 12. Gate-source threshold voltage as a function of

junction temperature

Fig. 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

BSH111BK

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Product data sheet

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BSH111BK

55 V, N-channel Trench MOSFET

aaa-015689

5

V

DS

V

GS

(V)

I

4

3

2

1

0

D

V

GS(pl)

V

GS(th)

GS

V

Q

GS2

GS1

Q

GD

GS

Q

G(tot)

003aaa508

Fig. 15. MOSFET transistor: Gate charge waveform

definitions

0

0.2

0.4

0.6

Q

G

(nC)

I_D= 0.2 A; V_DS= 30 V; T_amb= 25 °C

Fig. 14. Gate-source voltage as a function of gate

charge; typical values

aaa-015690

0.20

I

S

(A)

0.15

(1)

0.10

0.05

0

(2)

0

0.4

0.8

1.2

V

(V)

SD

V_GS= 0 V

(1) T_j= 150 °C

(2) T_j= 25 °C

Fig. 16. Source current as a function of source-drain voltage; typical values

BSH111BK

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BSH111BK

55 V, N-channel Trench MOSFET

11. Test information

t

1

2

P

duty cycle δ =

t

2

t

1

t

006aaa812

Fig. 17. Duty cycle definition

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BSH111BK

55 V, N-channel Trench MOSFET

12. Package outline

Plastic surface-mounted package; 3 leads

SOT23

B

D

A

E

X

H

E

v

A

3

Q

A

1

c

1

2

e

1

b

w

B

L

p

e

detail X

0

1

2 mm

scale

Dimensions (mm are the original dimensions)

Unit

A

b

c

D

E

e

1

H

E

L

p

Q

v

w

1

p

max 1.1 0.1 0.48 0.15 3.0 1.4

nom

2.5 0.45 0.55

2.1 0.15 0.45

mm

1.9 0.95

0.2 0.1

0.9

0.38 0.09 2.8 1.2

min

sot023_po

References

Outline

version

European

projection

Issue date

IEC

JEDEC

JEITA

14-06-19

14-09-22

SOT23

TO-236AB

Fig. 18. Package outline TO-236AB (SOT23)

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BSH111BK

55 V, N-channel Trench MOSFET

13. Soldering

3.3

2.9

1.9

solder lands

solder resist

2

3

1.7

solder paste

occupied area

0.6

0.7

(3×)

Dimensions in mm

0.5

(3×)

0.6

(3×)

1

sot023_fr

Fig. 19. Reflow soldering footprint for TO-236AB (SOT23)

2.2

1.2

(2×)

1.4

(2×)

solder lands

solder resist

2.6

4.6

occupied area

Dimensions in mm

1.4

preferred transport direction during soldering

2.8

4.5

sot023_fw

Fig. 20. Wave soldering footprint for TO-236AB (SOT23)

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BSH111BK

55 V, N-channel Trench MOSFET

14. Revision history

Table 8.

Revision history

Data sheet ID

Release date

Data sheet status

Change notice

Supersedes

BSH111BK v.1

20141126

Product data sheet

-

BSH111BK

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Product data sheet

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BSH111BK

55 V, N-channel Trench MOSFET

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation -

lost profits, lost savings, business interruption, costs related to the removal

or replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

15. Legal information

15.1 Data sheet status

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Document

Product

Definition

status [1][2] status [3]

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Right to make changes — NXP Semiconductors reserves the right to

make changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconductors products in such equipment or

applications and therefore such inclusion and/or use is at the customer’s own

risk.

Product

[short] data

sheet

Production

This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nxp.com.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

15.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

NXP Semiconductors does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Customers are responsible for the design and operation of their

applications and products using NXP Semiconductors products, and NXP

Semiconductors accepts no liability for any assistance with applications or

customer product design. It is customer’s sole responsibility to determine

whether the NXP Semiconductors product is suitable and fit for the

customer’s applications and products planned, as well as for the planned

application and use of customer’s third party customer(s). Customers should

provide appropriate design and operating safeguards to minimize the risks

associated with their applications and products.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences

of use of such information.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default

in the customer’s applications or products, or the application or use by

customer’s third party customer(s). Customer is responsible for doing all

necessary testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications

and the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the

relevant full data sheet, which is available on request via the local NXP

Semiconductors sales office. In case of any inconsistency or conflict with the

short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product

is deemed to offer functions and qualities beyond those described in the

Product data sheet.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

15.3 Disclaimers

Limited warranty and liability — Information in this document is believed

to be accurate and reliable. However, NXP Semiconductors does not give

any representations or warranties, expressed or implied, as to the accuracy

or completeness of such information and shall have no liability for the

consequences of use of such information. NXP Semiconductors takes no

responsibility for the content in this document if provided by an information

source outside of NXP Semiconductors.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

BSH111BK

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BSH111BK

55 V, N-channel Trench MOSFET

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It is neither qualified nor

tested in accordance with automotive testing or application requirements.

NXP Semiconductors accepts no liability for inclusion and/or use of non-

automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards,

customer (a) shall use the product without NXP Semiconductors’ warranty

of the product for such automotive applications, use and specifications, and

(b) whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

15.4 Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,

HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,

MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP

Semiconductors N.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

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NXP Semiconductors

BSH111BK

55 V, N-channel Trench MOSFET

16. Contents

1

General description ............................................... 1

Features and benefits ............................................1

Applications ........................................................... 1

Quick reference data ............................................. 1

Pinning information ...............................................2

Ordering information .............................................2

Marking ...................................................................2

Limiting values .......................................................3

Thermal characteristics .........................................4

Characteristics .......................................................6

Test information ...................................................10

Package outline ................................................... 11

Soldering .............................................................. 12

Revision history ...................................................13

2

3

4

5

6

7

8

9

10

11

12

13

14

15

Legal information .................................................14

Data sheet status ............................................... 14

Definitions ...........................................................14

Disclaimers .........................................................14

Trademarks ........................................................ 15

15.1

15.2

15.3

15.4

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 26 November 2014

BSH111BK

All information provided in this document is subject to legal disclaimers.

Product data sheet

26 November 2014

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型号：	BSH111BK
厂家：	NXP
描述：	SMALL SIGNAL, FET
文件：	总16页 (文件大小：283K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BSH111BK [NXP]

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