BSH114TRL [NXP]
TRANSISTOR 850 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal;
| 型号： | BSH114TRL |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 850 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总13页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSH114
N-channel enhancement mode field effect transistor
Rev. 01 — 09 November 2000
Product specification
M3D088
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
BSH114 in SOT23.
2. Features
■ TrenchMOS™ technology
■ Low on-state resistance
■ Very fast switching
■ Surface mount package.
3. Applications
■ Relay driver
■ DC to DC converter
■ General purpose switch.
c
c
4. Pinning information
Table 1: Pinning - SOT23, simplified outline and symbol
Pin
1
Description
gate (g)
Simplified outline
Symbol
3
d
s
2
source (s)
drain (d)
3
g
1
2
MBB076
Top view
MSB003
SOT23
1. TrenchMOS is a trademark of Royal Philips Electronics.
BSH114
N-channel enhancement mode field effect transistor
Philips Semiconductors
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
Typ
−
Max
100
0.85
0.83
150
500
Unit
V
VDS
ID
drain-source voltage (DC)
drain current (DC)
Tj = 25 to 150 °C
Tsp = 25 °C; VGS = 10 V
Tsp = 25 °C
−
A
Ptot
Tj
total power dissipation
junction temperature
−
W
−
°C
mΩ
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 0.5 A
400
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
−
Max
100
100
±20
0.85
0.5
Unit
V
VDS
VDGR
VGS
ID
drain-source voltage (DC)
Tj = 25 to 150 °C
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
Tj = 25 to 150 °C; RGS = 20 kΩ
−
V
−
V
Tsp = 25 °C; VGS = 10 V; Figure 2 and 3
Tsp = 100 °C; VGS = 10 V; Figure 2 and 3
Tamb = 25 °C; VGS = 10 V
−
A
−
A
−
0.5
A
Tamb = 100 °C; VGS = 10 V
Tsp = 25 °C; tp ≤ 10 µs; Figure 3
Tsp = 25 °C; Figure 1
−
0.3
A
IDM
Ptot
peak drain current
−
3.4
A
total power dissipation
−
0.83
0.36
+150
+150
W
W
°C
°C
Tamb = 25 °C
−
Tstg
Tj
storage temperature
−55
−55
operating junction temperature
Source-drain (reverse) diode
IS
source (diode forward) current (DC) Tsp = 25 °C
peak (diode forward) source current Tsp = 25 °C; tp ≤ 10 µs
−
−
0.85
3.4
A
A
ISM
9397 750 07708
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 09 November 2000
2 of 13
BSH114
N-channel enhancement mode field effect transistor
Philips Semiconductors
03aa25
03aa17
120
120
P
I
der
(%)
100
der
(%)
100
80
60
40
20
0
80
60
40
20
0
0
25
50
75
100 125 150 175
o
0
25
50
75
100 125 150 175
o
T
( C)
sp
T
( C)
sp
V
GS ≥ 10 V
Ptot
Pder
=
× 100%
----------------------
P
ID
°
tot(25 C)
ID
=
× 100%
------------------
I
°
D(25 C)
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
03ac55
10
RDSon = VDS/ ID
ID
(A)
1
tp = 10 µs
100 µs
1 ms
-1
10
10 ms
D.C.
t
p
P
δ =
100 ms
T
-2
10
t
t
p
T
-3
10
-1
2
3
10
10
1
10
10
VDS (V)
Tsp = 25 °C; IDM is single pulse
Fig 3. Safe operating area; drain and peak currents as a function of drain source voltage.
9397 750 07708
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 09 November 2000
3 of 13
BSH114
N-channel enhancement mode field effect transistor
Philips Semiconductors
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
Value Unit
Rth(j-sp) thermal resistance from junction to solder point mounted on a metal clad substrate; Figure 4
150
350
K/W
K/W
Rth(j-amb) thermal resistance from junction to ambient
mounted on a printed circuit board;
minimum footprint
7.1 Transient thermal impedance
03ac54
3
10
Zth(j-sp)
(K/W)
2
10
δ = 0.5
0.2
t
p
P
δ =
0.1
T
10
0.05
0.02
t
t
p
1
T
single pulse
1
-5
-4
10
-3
10
-2
10
-1
10
tp (s)
10
10
Tsp = 25 °C
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
9397 750 07708
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 09 November 2000
4 of 13
BSH114
N-channel enhancement mode field effect transistor
Philips Semiconductors
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 250 µA; VGS = 0 V
Tj = 25 °C
100 130
−
−
V
V
Tj = −55 °C
95
−
VGS(th)
gate-source threshold voltage
drain-source leakage current
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
2
3
−
−
4
−
6
V
V
V
Tj = 150 °C
1.2
−
Tj = −55 °C
IDSS
VDS = 100 V; VGS = 0 V
Tj = 25 °C
−
−
−
1
25
µA
Tj = 150 °C
4
250 µA
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 0.5 A; Figure 7 and 8
Tj = 25 °C
10
100 nA
RDSon
drain-source on-state resistance
−
−
400 500 mΩ
Tj = 150 °C
−
1.15
Ω
Dynamic characteristics
gfs
forward transconductance
VDS = 20 V; ID = 0.5 A; Figure 11
0.5
−
1.2
4.6
0.8
2.1
138
21
12
6
−
−
−
−
−
−
−
−
−
−
−
S
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
ID = 0.5 A; VDD = 80 V; VGS = 10 V; Figure 14
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
−
−
VGS = 0 V; VDD = 25 V; f = 1 MHz; Figure 12
−
−
−
VDD = 50 V; RD = 100 Ω; VGS = 10 V; RG = 6 Ω
−
−
13
8
td(off)
tf
turn-off delay time
fall time
−
−
5
Source-drain (reverse) diode
VSD
trr
source-drain (diode forward) voltage IS = 0.85 A; VGS = 0 V; Figure 13
−
−
−
0.84
24
1
−
−
V
reverse recovery time
recovered charge
IS = 0.5 A; dIS/dt = −100 A/µs;
VGS = 0 V; VDS = 30 V
ns
nC
Qr
37
9397 750 07708
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 09 November 2000
5 of 13
BSH114
N-channel enhancement mode field effect transistor
Philips Semiconductors
03ac56
6 V
03ac58
3
3
VGS = 10 V 7 V
VDS > ID X RDSon
Tj = 25 ºC
ID
ID
5.8 V
5.6 V
(A)
(A)
2
1
0
2
5.4 V
5.2 V
Tj = 150 ºC
Tj = 25 ºC
1
0
5.0 V
4.8 V
0
0.5
1
1.5
2
0
2
4
6
8
VGS (V)
VDS (V)
Tj = 25 °C
Tj = 25 °C and 150 °C; VDS > ID x RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristic: drain current as a
function of gate-source voltage; typical values.
03ac57
03aa29
3
3
a
VGS = 4.8 V
5.0 V
Tj = 25 ºC
2.8
RDSon
2.6
2.4
2.2
2
(Ω)
2
1
0
1.8
1.6
1.4
1.2
1
5.2 V
5.4 V
5.6 V
5.8 V
6 V
0.8
0.6
0.4
0.2
0
7 V
10 V
ID (A)
0
1
2
3
4
-60
-20
20
60
100
140
180
o
T ( C)
j
Tj = 25 °C
RDSon
a =
---------------------------
R
°
DSon(25 C)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 07708
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 09 November 2000
6 of 13
BSH114
N-channel enhancement mode field effect transistor
Philips Semiconductors
03aa32
03aa35
5
-1
10
4.5
I
D
V
GS(th)
(A)
-2
4
10
(V)
max.
3.5
3
-3
10
typ.
min
2.5
2
min
typ
max
-4
-5
-6
10
10
10
1.5
1
0.5
0
-60
-20
20
60
100
140
o
180
0
1
2
3
4
5
T ( C)
V
(V)
j
GS
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03ac60
03ac59
3
2.5
VGS = 0 V
VDS > ID X RDSon
Tj = 25 ºC
Tj =150 ºC
gfs
(S)
2
IS
(A)
2
1
1.5
1
Tj =150 ºC
Tj = 25 ºC
0.5
0
0
0
0.4
0.8
1.2
ID (A)
VSD (V)
0
1
2
3
Tj = 25 °C and 150 °C; VDS > ID x RDSon
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 07708
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 09 November 2000
7 of 13
BSH114
N-channel enhancement mode field effect transistor
Philips Semiconductors
03ac60
03ac62
3
15
VGS = 0 V
IS
Tj = 25 ºC
VGS
(V)
ID = 0.5 A
(A)
2
10
VDD = 20 V
VDD = 80 V
1
5
Tj =150 ºC
Tj = 25 ºC
0
0
0
0.4
0.8
1.2
VSD (V)
QG (nC)
8
0
2
4
6
Tj = 25 °C and 150 °C; VGS = 0 V
ID = 0.5 A; VDD = 20 V and 80 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage;
typical values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
9397 750 07708
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 09 November 2000
8 of 13
BSH114
N-channel enhancement mode field effect transistor
Philips Semiconductors
9. Package outline
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
p
c
D
E
e
e
H
L
Q
v
w
A
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
Fig 15. SOT23.
9397 750 07708
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 09 November 2000
9 of 13
BSH114
N-channel enhancement mode field effect transistor
Philips Semiconductors
10. Revision history
Table 6: Revision history
Rev Date
CPCN
-
Description
Product specification; initial version
01 20001109
9397 750 07708
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 09 November 2000
10 of 13
BSH114
N-channel enhancement mode field effect transistor
Philips Semiconductors
11. Data sheet status
[1]
Datasheet status
Product status Definition
Development
Objective specification
This data sheet contains the design target or goal specifications for product development. Specification may
change in any manner without notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
13. Disclaimers
Short-form specification — The data in
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
a
short-form specification is
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
9397 750 07708
© Philips Electronics N.V. 2000 All rights reserved.
Product specification
Rev. 01 — 09 November 2000
11 of 13
BSH114
N-channel enhancement mode field effect transistor
Philips Semiconductors
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors,
Marketing Communications,
Internet: http://www.semiconductors.philips.com
Building BE, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 272 4825
(SCA70)
9397 750 07708
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 09 November 2000
12 of 13
BSH114
N-channel enhancement mode field effect transistor
Philips Semiconductors
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2
3
4
5
6
7
7.1
8
9
10
11
12
13
© Philips Electronics N.V. 2000.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 09 November 2000
Document order number: 9397 750 07708
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500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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