BSN304AMO [NXP]
TRANSISTOR 250 mA, 300 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SOT-54 (TO-92) VARIANT, 3 PIN, FET General Purpose Small Signal;
| 型号： | BSN304AMO |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 250 mA, 300 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SOT-54 (TO-92) VARIANT, 3 PIN, FET General Purpose Small Signal 晶体 小信号场效应晶体管 |
| 文件： | 总12页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BSN304; BSN304A
N-channel enhancement mode
vertical D-MOS transistors
April 1995
Product specification
File under Discrete Semiconductors, SC13b
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN304; BSN304A
FEATURES
QUICK REFERENCE DATA
• Direct interface to C-MOS, TTL,
etc.
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX.
VDS
drain-source voltage
−
300
250
1
V
• High-speed switching
ID
DC drain current
−
−
−
−
mA
W
V
• No secondary breakdown.
Ptot
total power dissipation up to Tamb = 25 °C
±VGSO
RDS(on)
gate-source voltage
open drain
20
8
DESCRIPTION
drain-source
on-resistance
ID = 250 mA;
VGS = 10 V
Ω
N-channel enhancement mode
vertical D-MOS transistor in a TO-92
variant envelope, intended for use as
a line current interruptor in telephone
sets and for applications in relay,
high-speed and line transformer
drivers.
VGS(off)
gate-source cut-off
voltage
ID = 1 mA;
VGS = VDS
0.8
2
V
PINNING - TO-92 variant
d
s
handbook, halfpage
1
2
3
PIN
DESCRIPTION
BSN304
g
1
2
3
gate
drain
source
MAM146
BSN304A
1
2
3
source
gate
Fig.1 Simplified outline and symbol.
drain
April 1995
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN304; BSN304A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
drain-source voltage
CONDITIONS
MIN. MAX. UNIT
VDS
±VGSO
ID
−
300
20
250
1
V
gate-source voltage
DC drain current
open drain
−
V
−
mA
A
IDM
Ptot
Tstg
Tj
peak drain current
−
total power dissipation
storage temperature
operating junction temperature
up to Tamb = 25 °C; note 1
−
1
W
−65
−
+150 °C
150 °C
THERMAL RESISTANCE
SYMBOL
PARAMETER
THERMAL RESISTANCE
125 K/W
Rth j-a
from junction to ambient; note 1
Note
1. Device mounted on an epoxy printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead
minimum 10 mm x 10 mm.
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)DSS
±IGSS
PARAMETER
drain-source breakdown voltage
gate-source leakage current
gate-source threshold voltage
drain-source on-resistance
CONDITIONS
MIN. TYP. MAX. UNIT
ID = 10 µA; VGS = 0
300
−
−
−
V
±VGS = 20 V; VDS = 0
ID = 1 mA; VDS = VGS
ID = 250 mA; VGS = 10 V
ID = 20 mA; VGS = 2.4 V
VDS = 240 V; VGS = 0
ID = 250 mA; VDS = 25 V
−
100
2
nA
V
VGS(th)
0.8
−
−
RDS(on)
6.7
7.9
−
8
Ω
−
14
100
−
Ω
IDSS
Yfs
drain-source leakage current
transfer admittance
−
nA
mS
pF
200
−
380
57
Ciss
input capacitance
VDS = 25 V; VGS = 0;
f = 1 MHz
90
Coss
Crss
output capacitance
VDS = 25 V; VGS = 0;
f = 1 MHz
−
−
15
30
15
pF
pF
feedback capacitance
VDS = 25 V; VGS = 0;
f = 1 MHz
2.6
Switching times (see Figs 2 and 3)
ton
turn-on time
ID = 250 mA; VDD = 50 V;
VGS = 0 to 10 V
−
−
2.5
17
10
30
ns
ns
toff
turn-off time
ID = 250 mA; VDD = 50 V;
VGS = 10 to 0 V
April 1995
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN304; BSN304A
handbook, halfpage
INPUT
90 %
V
= 50 V
handbook, halfpage
DD
10 %
90 %
10 V
0 V
OUTPUT
I
D
50 Ω
10 %
MSA631
t
t
off
on
MBB692
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
MRC238
MRC234
1.2
150
handbook, halfpage
handbook, halfpage
P
C
tot
(pF)
(W)
0.8
100
50
C
iss
0.4
C
oss
C
rss
0
0
0
0
50
100
150
200
(°C)
5
10
15
20
V
25
(V)
T
DS
amb
VGS = 0; f = 1 MHz; Tj = 25 °C.
Fig.4 Power derating curve.
Fig.5 Capacitance as a function of drain-source
voltage, typical values.
April 1995
4
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN304; BSN304A
MRC237
MRC243
1.2
1
handbook, halfpage
handbook, halfpage
I
D
(A)
P = 1 W
V
= 10 V
GS
5 V
I
D
0.8
4 V
(A)
3.5 V
0.8
0.6
0.4
3 V
0.4
2.5 V
2 V
0.2
0
0
0
0
4
8
12
2
4
6
8
10
(V)
V
(V)
DS
V
GS
Tj = 25 °C.
VDS = 10 V; Tj = 25 °C.
Fig.6 Typical output characteristics.
Fig.7 Typical transfer characteristics.
MRC240
MRC239
25
30
handbook, halfpage
handbook, halfpage
R
DSon
(Ω)
V
= 2 V
3.5 V
2.5 V 3 V
GS
R
DSon
(Ω)
20
20
15
10
10
5
10 V 4 V 5 V
0
10
0
0
−2
−1
10
1
2
4
6
8
10
(V)
I
(A)
D
V
GS
Tj = 25 °C.
VDS = 100 mV; Tj = 25 °C.
Fig.8 Drain-source on-resistance as a function of
drain current, typical values.
Fig.9 Drain-source on-resistance as a function of
gate-source voltage, typical values.
April 1995
5
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN304; BSN304A
MRC241
3
10
Z
th j-a
(K/W)
2
10
δ =
0.5
0.2
0.1
10
0.05
0.02
0.01
t
p
P
δ =
T
1
0
t
t
p
T
2
−1
10
−5
−4
−3
−2
−1
3
10
10
10
10
10
1
10
10
10
t
(s)
p
Fig.10 Transient thermal resistance from junction to ambient as a function of pulse time.
MRC242
10
handbook, halfpage
I
D
(A)
1
(1)
t
=
p
10 µs
100 µs
1 ms
−1
10
10 ms
t
p
100 ms
1 s
P
=
δ
T
−2
10
DC
t
t
p
T
−3
10
2
3
10
10
10
1
V
(V)
DS
δ = 0.01; Tamb = 25 °C.
(1) RDS(on) limitation.
Fig.11 SOAR curve.
April 1995
6
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN304; BSN304A
MRC235
MRC236
2.5
1.25
handbook, halfpage
handbook, halfpage
k
k
(1)
2
1
(2)
1.5
0.75
0.5
1
0.5
0
0.25
0
−50
−50
0
50
100
150
0
50
100
150
T (°C)
T (°C)
j
j
RDS (on) at Tj
----------------------------------------------
k =
.
RDS (on) at 25 °C
Typical RDS(on)
;
VGS (th) at Tj
--------------------------------------------
k =
.
(1) ID = 250 mA; VGS = 10 V.
(2) D = 20 mA; VGS = 2.4 V.
VGS (th) at 25 °C
I
Fig.12 Temperature coefficient of
drain-source on-resistance.
Fig.13 Temperature coefficient of gate-source
threshold voltage.
April 1995
7
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN304; BSN304A
PACKAGE OUTLINES
Plastic single-ended leaded (through hole) package; 3 leads (on-circle)
SOT54 variant
c
L
2
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
L
2
1
UNIT
mm
A
b
b
c
D
d
E
e
e
L
1
1
max
max
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
2.54
1.27
2.5
2.5
Notes
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
ISSUE DATE
PROJECTION
VERSION
IEC
JEDEC
EIAJ
97-04-14
SOT54 variant
TO-92
SC-43
April 1995
8
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN304; BSN304A
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1995
9
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN304; BSN304A
NOTES
April 1995
10
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN304; BSN304A
NOTES
April 1995
11
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© Philips Electronics N.V. 1997
SCA54
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Printed in The Netherlands
137107/00/01/pp12
Date of release: April 1995
Document order number: 9397 750 02464
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