BSP255T/R [NXP]
TRANSISTOR 0.325 A, 300 V, 17 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power;
| 型号： | BSP255T/R |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 0.325 A, 300 V, 17 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power 晶体 晶体管 功率场效应晶体管 |
| 文件： | 总10页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BSP255
P-channel enhancement mode
vertical D-MOS transistor
1996 Aug 05
Product specification
Supersedes data of 1996 Jun 13
File under Discrete Semiconductors, SC07
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSP255
FEATURES
PINNING - SOT223
• Direct interface to C-MOS, TTL etc
• Low threshold voltage
PIN
SYMBOL
DESCRIPTION
1
2
3
4
g
d
s
d
gate
• High speed switching
drain
• No secondary breakdown.
source
drain
APPLICATIONS
• Line current interrupter in telephone sets
• Relay, high speed and line transformer drivers.
handbook, halfpage
4
d
s
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor
in a 4-pin plastic SOT223 SMD package.
g
1
2
3
CAUTION
Top view
MAM121
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
PARAMETER
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
CONDITIONS
MIN.
MAX.
−300
UNIT
−
−
−
V
V
V
V
VSD
VGS
VGSth
ID
IS = −0.5 A
−1.8
±20
−2
ID = −1 mA; VDS = VGS
Ts = 100 °C
−0.8
−
−
−
−325
17
mA
Ω
RDSon
Ptot
drain-source on-state resistance
total power dissipation
ID = −160 mA; VGS = −10 V
Ts = 100 °C
4
W
1996 Aug 05
2
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSP255
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
drain-source voltage (DC)
CONDITIONS
MIN.
MAX.
−300
UNIT
VDS
VGS
ID
−
−
−
−
−
V
V
gate-source voltage (DC)
drain current (DC)
±20
−325
−1.3
4
Ts = 100 °C; note 1
note 2
mA
A
IDM
Ptot
Tstg
Tj
peak drain current
total power dissipation
storage temperature
Ts = 100 °C
W
−65
−65
+150
+150
°C
°C
operating junction temperature
Source-drain diode
IS
source current (DC)
peak pulsed source current
Ts = 100 °C
−
−
−0.5
−2
A
A
ISM
note 2
Notes
1. Ts is the temperature at the soldering point of the drain lead.
2. Pulse width and duty cycle limited by maximum junction temperature.
MBH446
MBH445
10
−10
handbook, halfpage
handbook, halfpage
P
tot
(W)
I
D
(A)
8
−1
(1)
t
=
p
10 µs
6
4
2
100 µs
−1
−10
1 ms
t
10 ms
p
DC
P
=
δ
T
−2
−10
t
t
p
T
−3
0
0
−10
2
3
50
100
150
200
−1
−10
−10
−10
o
T
( C)
V
(V)
s
DS
δ = 0.01; TS = 100 °C.
(1) RDSon limitation
.
Fig.2 Power derating curve.
Fig.3 DC SOAR.
1996 Aug 05
3
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSP255
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to soldering point
VALUE
UNIT
Rth j-s
12
K/W
MBH444
2
10
R
th j-s
(K/W)
δ =
0.75
10
0.5
0.33
0.2
0.1
1
t
p
0.05
P
=
δ
T
0.02
0.01
0
t
t
p
T
−1
10
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
1
t
(s)
p
Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
1996 Aug 05
4
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSP255
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VGS = 0; ID = −10 µA
MIN.
TYP.
MAX. UNIT
V(BR)DSS drain-source breakdown voltage
−300
−
−
V
VGSth
IDSS
gate-source threshold voltage
drain-source leakage current
gate leakage current
VGS = VDS; ID = −1 mA
VGS = 0; VDS = −240 V
VGS = ±20 V; VDS = 0
VGS = −10 V; ID = −160 mA
−0.8
−
−
−2
−100
±100
17
20
25
−
V
−
nA
nA
Ω
IGSS
−
−
RDSon
drain-source on-state resistance
−
−
VGS = −4.5 V; ID = −80 mA
−
−
Ω
VGS = −2.8 V; ID = −50 mA
−
−
Ω
Ciss
Coss
Crss
Qg
input capacitance
VGS = 0; VDS = −50 V; f = 1 MHz
VGS = 0; VDS = −50 V; f = 1 MHz
VGS = 0; VDS = −50 V; f = 1 MHz
−
45
15
3
pF
pF
pF
nC
output capacitance
reverse transfer capacitance
total gate charge
−
−
−
−
VGS = −10 V; VDD = −50 V;
ID = −160 mA; Tamb = 25 °C
−
2.3
−
Qgs
Qgd
gate-source charge
gate-drain charge
VGS = −10 V; VDD = −50 V;
ID = −160 mA; Tamb = 25 °C
−
−
0.1
0.7
−
−
nC
nC
VGS = −10 V; VDD = −50 V;
ID = −160 mA; Tamb = 25 °C
Switching times (see Fig.11)
td(on)
tr
turn-on delay time
rise time
VGS = 0 to −10 V; VDD = −50 V;
ID = −160 mA; Rgen = 50 Ω
−
−
−
−
−
−
2.4
1.6
4
−
−
−
−
−
−
ns
ns
ns
ns
ns
ns
ton
turn-on switching time
turn-off delay time
fall time
td(off)
tf
VGS = −10 to 0 V; VDD = −50 V;
ID = −160 mA; Rgen = 50 Ω
13
12
25
toff
turn-off switching time
Source-drain diode
VSD
source-drain forward voltage
VGD = 0; IS = −0.5 A
−
−
−1.8
V
1996 Aug 05
5
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSP255
MBH441
MBH443
−10
−800
handbook, halfpage
handbook, halfpage
V
GS
(V)
I
V
= −10 V
D
GS
(mA)
−8
−600
−4.5 V
−4.0 V
−6
−400
−200
−3.5 V
−3.0 V
−4
−2
−2.5 V
−2.0 V
0
0
0
0
0.5
1.0
1.5
2.0
Q
2.5
(nC)
−2
−4
−6
−8
−10
V
−12
(V)
g
DS
VDD = −50 V: ID = −180 mA.
Tj = 25 °C.
Fig.5 Gate-source voltage as a function of
total gate charge; typical values.
Fig.6 Output characteristics; typical values.
MBH440
MBH436
−800
−2.5
handbook, halfpage
handbook, halfpage
I
I
SD
D
(A)
(mA)
−2.0
−600
−1.5
−400
−200
−1.0
−0.5
(3)
(1) (2)
0
0
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
(V)
−2
−4
−6
−8
V
−10
(V)
V
GS
SD
VGD = 0.
(1) Tj = 150 °C.
(2) Tj = 25 °C.
(3) Tj = −65 °C.
Fig.8 Source-drain current as a function of
source-drain diode forward voltage;
typical values.
VDS = −10 V; Tj = 25 °C.
Fig.7 Transfer characteristics; typical values.
1996 Aug 05
6
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSP255
handbook, halfpage
MBH437
MBH442
2
160
10
handbook, halfpage
C
(pF)
R
DSon
(Ω)
120
80
(1)
(2)
(3)
(4)
(5)
C
iss
40
C
oss
C
rss
10
0
0
0
−2
−4
−6
−8
V
−10
(V)
−10
−20
−30
−40
−50
(V)
V
GS
DS
(3) ID = −80 mA.
(4) ID = −160 mA.
(5) ID = −325 mA.
V
DS ≥ ID × RDSon; Tj = 25 °C.
(1) ID = −10 mA.
(2) ID = −50 mA.
VGS = 0; f = 1 MHz; Tj = 25 °C.
Fig.9 Drain source on-state resistance as a function
of gate-source voltage; typical values.
Fig.10 Capacitance as a function of drain-source
voltage; typical values.
0
10 %
−V
DD
V
in
90 %
R
L
V
0
out
10 %
10 %
V
out
V
in
90 %
90 %
t
t
d(on)
t
d(off)
t
t
t
f
r
MGD391
on
off
Fig.11 Switching time test circuit and input and output waveforms.
7
1996 Aug 05
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSP255
MBH438
MBH439
1.4
2.4
handbook, halfpage
handbook, halfpage
k
k
2.0
(2)
(1)
1.2
1.6
1.2
0.8
1.0
0.8
0.6
0.4
−75
−75
−25
25
75
125
175
−25
25
75
125
175
T (°C)
T (°C)
j
j
RDSon at Tj
k =
-----------------------------------------
VGSth at Tj
RDSon at 25 °C
k =
--------------------------------------
VGSth at 25°C
(1) VGS = −4.5 V; ID = −80 mA.
(2) VGS = −2.8 V; ID = −50 mA.
VGSth at VDS =VGS ; ID = −1 mA.
Fig.12 Temperature coefficient of gate-source
threshold voltage as a function of
Fig.13 Temperature coefficient of drain-source
on-state resistance as a function of
junction temperature; typical values.
junction temperature; typical values.
1996 Aug 05
8
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSP255
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8
1.5
0.10 0.80
0.01 0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
7.3
6.7
1.1
0.7
0.95
0.85
mm
4.6
2.3
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
96-11-11
97-02-28
SOT223
1996 Aug 05
9
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSP255
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Aug 05
10
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