BSR41T/R [NXP]
TRANSISTOR 1 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-243AA, PLASTIC, SC-62, TO-243, 3 PIN, BIP General Purpose Power;型号: | BSR41T/R |
厂家: | NXP |
描述: | TRANSISTOR 1 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-243AA, PLASTIC, SC-62, TO-243, 3 PIN, BIP General Purpose Power |
文件: | 总7页 (文件大小:119K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BSR40; BSR41; BSR42; BSR43
NPN medium power transistors
Product data sheet
2004 Dec 13
Supersedes data of 1999 Apr 28
NXP Semiconductors
Product data sheet
BSR40; BSR41;
BSR42; BSR43
NPN medium power transistors
FEATURES
PINNING
PIN
• High current (max. 1 A)
• Low voltage (max. 80 V).
DESCRIPTION
1
2
3
emitter
collector
base
APPLICATIONS
• Thick and thin-film circuits
• Telephony and general industrial applications.
DESCRIPTION
2
NPN medium power transistor in a SOT89 plastic
package. PNP complements: BSR30; BSR31 and BSR33.
3
1
MARKING
3
2
1
sym042
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BSR40
BSR41
AR1
AR2
BSR42
BSR43
AR3
AR4
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
DESCRIPTION
NAME
VERSION
BSR40
BSR41
BSR42
BSR43
SC-62
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
SOT89
2004 Dec 13
2
NXP Semiconductors
Product data sheet
BSR40; BSR41; BSR42;
BSR43
NPN medium power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
BSR40; BSR41
BSR42; BSR43
−
−
70
V
V
90
VCEO
collector-emitter voltage
BSR40; BSR41
open base
−
−
−
−
−
−
−
60
V
V
V
A
A
A
W
BSR42; BSR43
80
VEBO
IC
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
open collector
5
1
ICM
IBM
Ptot
Tstg
Tj
2
0.2
1.35
+150
150
+150
Tamb ≤ 25 °C; note 1
−65
−
°C
°C
°C
Tamb
−65
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
note 1
VALUE
93
UNIT
K/W
K/W
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
Rth(j-s)
13
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
2004 Dec 13
3
NXP Semiconductors
Product data sheet
BSR40; BSR41; BSR42;
BSR43
NPN medium power transistors
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0 A; VCB = 60 V
MIN.
MAX.
100
UNIT
nA
ICBO
collector-base cut-off current
−
−
−
IE = 0 A; VCB = 60 V; Tj = 150 °C
IC = 0 A; VEB = 5 V
50
μA
IEBO
hFE
emitter-base cut-off current
DC current gain
100
nA
IC = 100 μA; VCE = 5 V; note 1
BSR40; BSR42
10
30
−
−
BSR41; BSR43
DC current gain
IC = 100 mA; VCE = 5 V; note 1
IC = 500 mA; VCE = 5 V; note 1
BSR40; BSR42
40
120
300
BSR41; BSR43
100
DC current gain
BSR40; BSR42
30
50
−
−
BSR41; BSR43
−
VCEsat
collector-emitter saturation voltage
IC = 150 mA; IB = 15 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
IC = 150 mA; IB = 15 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
IE = ie = 0 A; VCB = 10 V; f = 1 MHz
IC = ic = 0 A; VEB = 0.5 V; f = 1 MHz
250
500
1
mV
mV
V
−
VBEsat
base-emitter saturation voltage
−
−
1.2
12
90
−
V
Cc
Ce
fT
collector capacitance
emitter capacitance
transition frequency
−
pF
pF
MHz
−
IC = 50 mA; VCE = 10 V; f = 100 MHz 100
Switching times (between 10% and 90% levels)
ton
toff
turn-on time
turn-off time
ICon = 100 mA; IBon = 5 mA;
IBoff = −5 mA
−
−
250
1
ns
μs
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.01.
2004 Dec 13
4
NXP Semiconductors
Product data sheet
BSR40; BSR41; BSR42;
BSR43
NPN medium power transistors
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
A
D
b
p3
E
H
E
L
p
1
2
3
c
b
p2
w
M
b
p1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b
b
c
D
E
e
e
H
E
L
p
w
p1
p2
p3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
4.25
3.75
1.2
0.8
mm
3.0
1.5
0.13
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-08-03
06-03-16
SOT89
TO-243
SC-62
2004 Dec 13
5
NXP Semiconductors
Product data sheet
BSR40; BSR41; BSR42;
BSR43
NPN medium power transistors
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Dec 13
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/04/pp7
Date of release: 2004 Dec 13
Document order number: 9397 750 13874
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