BSR42 [NXP]
NPN medium power transistors; NPN型中功率晶体管
| 型号： | BSR42 |
| 厂家： | 
NXP |
| 描述： | NPN medium power transistors |
| 文件： | 总8页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BSR40; BSR41; BSR42; BSR43
NPN medium power transistors
1999 Apr 28
Product specification
Supersedes data of 1997 Apr 07
Philips Semiconductors
Product specification
NPN medium power transistors
BSR40; BSR41; BSR42; BSR43
FEATURES
PINNING
PIN
• High current (max. 1 A)
• Low voltage (max. 80 V).
DESCRIPTION
1
2
3
emitter
collector
base
APPLICATIONS
• Thick and thin-film circuits
• Telephony and general industrial applications.
handbook, halfpage
2
1
DESCRIPTION
3
NPN medium power transistor in a SOT89 plastic
package. PNP complements: BSR30; BSR3 and BSR33.
MARKING
1
2
3
Bottom view
MAM296
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BSR40
BSR41
AR1
AR2
BSR42
BSR43
AR3
AR4
Fig.1 Simplified outline (SOT89) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
BSR40; BSR41
−
−
70
V
V
BSR42; BSR43
90
VCEO
collector-emitter voltage
BSR40; BSR41
open base
−
−
−
−
−
−
−
60
V
V
V
A
A
A
W
BSR42; BSR43
80
VEBO
IC
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open collector
5
1
ICM
IBM
Ptot
Tstg
Tj
2
0.2
1.35
+150
150
+150
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb ≤ 25 °C; note 1
−65
−
°C
°C
°C
Tamb
−65
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
1999 Apr 28
2
Philips Semiconductors
Product specification
NPN medium power transistors
BSR40; BSR41; BSR42; BSR43
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
93
13
K/W
K/W
thermal resistance from junction to soldering point
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = 60 V
MIN.
MAX.
100
UNIT
nA
ICBO
collector cut-off current
−
−
−
IE = 0; VCB = 60 V; Tj = 150 °C
IC = 0; VEB = 5 V
50
µA
IEBO
hFE
emitter cut-off current
DC current gain
100
nA
IC = 100 µA; VCE = 5 V; note 1
BSR40; BSR42
10
30
−
−
BSR41; BSR43
DC current gain
IC = 100 mA; VCE = 5 V; note 1
IC = 500 mA; VCE = 5 V; note 1
BSR40; BSR42
40
120
300
BSR41; BSR43
100
DC current gain
BSR40; BSR42
30
50
−
−
BSR41; BSR43
−
VCEsat
collector-emitter saturation voltage
IC = 150 mA; IB = 15 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
IC = 150 mA; IB = 15 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
250
500
1
mV
mV
V
−
VBEsat
base-emitter saturation voltage
−
−
1.2
12
90
−
V
Cc
Ce
fT
collector capacitance
emitter capacitance
transition frequency
−
pF
pF
MHz
−
IC = 50 mA; VCE = 10 V; f = 100 MHz 100
Switching times (between 10% and 90% levels)
ton
toff
turn-on time
turn-off time
ICon = 100 mA; IBon = 5 mA;
IBoff = −5 mA
−
−
250
1
ns
µs
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.01.
1999 Apr 28
3
Philips Semiconductors
Product specification
NPN medium power transistors
BSR40; BSR41; BSR42; BSR43
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
A
D
b
3
E
L
H
E
1
2
3
c
b
2
w
M
b
1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
L
min.
UNIT
A
b
b
b
c
D
E
e
e
H
E
w
1
2
3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.37
4.6
4.4
2.6
2.4
4.25
3.75
mm
3.0
1.5
0.8
0.13
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT89
97-02-28
1999 Apr 28
4
Philips Semiconductors
Product specification
NPN medium power transistors
BSR40; BSR41; BSR42; BSR43
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 28
5
Philips Semiconductors
Product specification
NPN medium power transistors
BSR40; BSR41; BSR42; BSR43
NOTES
1999 Apr 28
6
Philips Semiconductors
Product specification
NPN medium power transistors
BSR40; BSR41; BSR42; BSR43
NOTES
1999 Apr 28
7
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SCA63
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Printed in The Netherlands
115002/00/03/pp8
Date of release: 1999 Apr 28
Document order number: 9397 750 05768
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