BSS51 [NXP]
NPN Darlington transistors; NPN达林顿晶体管
| 型号： | BSS51 |
| 厂家： | 
NXP |
| 描述： | NPN Darlington transistors |
| 文件： | 总8页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BSS50; BSS51; BSS52
NPN Darlington transistors
1997 Sep 03
Product specification
Supersedes data of 1997 May 13
File under Discrete Semiconductors, SC04
Philips Semiconductors
Product specification
NPN Darlington transistors
BSS50; BSS51; BSS52
FEATURES
PINNING
PIN
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
DESCRIPTION
1
2
3
emitter
base
collector, connected to case
APPLICATIONS
• Industrial high gain amplification.
handbook, halfpage
1
3
2
DESCRIPTION
2
NPN Darlington transistor in a TO-39 metal package.
PNP complements: BSS61 and BSS62.
3
MAM311
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
BSS50
−
−
−
−
−
−
60
V
V
V
BSS51
80
90
BSS52
VCES
collector-emitter voltage VBE = 0
BSS50
BSS51
−
−
−
−
−
−
−
−
−
−
−
−
−
45
60
80
1
V
V
V
A
BSS52
IC
collector current
Ptot
total power dissipation
T
amb ≤ 25 °C
case ≤ 25 °C
0.8
5
W
W
T
hFE
fT
DC current gain
IC = 500 mA; VCE = 10 V
2000
−
transition frequency
IC = 500 mA; VCE = 5 V; f = 100 MHz
−
200
−
MHz
1997 Sep 03
2
Philips Semiconductors
Product specification
NPN Darlington transistors
BSS50; BSS51; BSS52
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
BSS50
−
−
−
60
V
V
V
BSS51
80
90
BSS52
VCES
collector-emitter voltage
BSS50
VBE = 0
−
−
−
−
−
−
−
−
−
45
V
V
V
V
A
A
BSS51
60
BSS52
80
VEBO
IC
ICM
IB
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
open collector
5
1
2
100
0.8
5
mA
W
Ptot
Tamb ≤ 25 °C
case ≤ 25 °C
T
W
Tstg
Tj
storage temperature
−65
−
+150
200
+150
°C
°C
°C
junction temperature
Tamb
operating ambient temperature
−65
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
220
UNIT
K/W
K/W
Rth j-a
Rth j-c
thermal resistance from junction to ambient in free air
thermal resistance from junction to case
35
1997 Sep 03
3
Philips Semiconductors
Product specification
NPN Darlington transistors
BSS50; BSS51; BSS52
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICES
collector cut-off current
BSS50
V
BE = 0; VCE = 45 V
BE = 0; VCE = 60 V
−
−
−
−
−
−
−
−
50
50
50
50
nA
nA
nA
nA
BSS51
V
BSS52
VBE = 0; VCE = 80 V
IC = 0; VEB = 4 V
VCE = 10 V
IEBO
hFE
emitter cut-off current
DC current gain
IC = 150 mA
1000
2000
−
−
−
−
−
−
IC = 500 mA
−
VCEsat
collector-emitter saturation voltage IC = 500 mA; IB = 0.5 mA
IC = 500 mA; IB = 0.5 mA; Tj = 200 °C
1.3
1.3
V
V
−
VCEsat
collector-emitter saturation voltage
BSS51
IC = 1 A; IB = 1 mA
−
−
−
−
1.6
2.3
V
V
IC = 1 A; IB = 1 mA; Tj = 200 °C
VCEsat
collector-emitter saturation voltage
BSS50; BSS52
IC = 1 A; IB = 4 mA
−
−
−
−
−
−
1.6
1.6
1.9
V
V
V
IC = 1 A; IB = 4 mA; Tj = 200 °C
IC = 500 mA; IB = 0.5 mA
VBEsat
VBEsat
base-emitter saturation voltage
base-emitter saturation voltage
BSS51
IC = 1 A; IB = 1 mA
−
−
2.2
2.2
1.65
1.75
−
V
BSS50; BSS52
IC = 1 A; IB = 4 mA
−
−
V
VBEon
base-emitter on-state voltage
IC = 150 mA; VCE = 10 V
IC = 500 mA; VCE = 10 V
IC = 500 mA; VCE = 5 V; f = 100 MHz
1.3
1.4
−
−
V
−
V
fT
transition frequency
200
MHz
Switching times (between 10% and 90% levels)
ton
turn-on time
ICon = 500 mA; IBon = 0.5 mA;
−
0.5
−
µs
IBoff = −0.5 mA
ICon = 1 A; IBon = 1 mA; IBoff = −1 mA
−
−
0.4
1.3
−
−
µs
µs
toff
turn-off time
ICon = 500 mA; IBon = 0.5 mA;
IBoff = −0.5 mA
ICon = 1 A; IBon = 1 mA; IBoff = −1 mA
−
1.5
−
µs
1997 Sep 03
4
Philips Semiconductors
Product specification
NPN Darlington transistors
BSS50; BSS51; BSS52
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT5/11
seating plane
α
j
w
M
M
M
B
A
B
1
b
k
D
1
2
3
a
A
D
A
L
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
a
b
D
D
1
j
k
L
w
α
6.60
6.35
0.48 9.39 8.33
0.41 9.08 8.18
0.85 0.95 14.2
0.75 0.75 12.7
mm
5.08
°
45
0.2
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-04-11
SOT5/11
TO-39
1997 Sep 03
5
Philips Semiconductors
Product specification
NPN Darlington transistors
BSS50; BSS51; BSS52
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Sep 03
6
Philips Semiconductors
Product specification
NPN Darlington transistors
BSS50; BSS51; BSS52
NOTES
1997 Sep 03
7
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SCA55
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Date of release: 1997 Sep 03
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