BSS84AK215 [NXP]
50 V, 180 mA P-channel Trench MOSFET; 50 V ， 180毫安P沟道沟槽MOSFET
| 型号： | BSS84AK215 |
| 厂家： | 
NXP |
| 描述： | 50 V, 180 mA P-channel Trench MOSFET |
| 文件： | 总16页 (文件大小：872K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSS84AK
T23
SO
50 V, 180 mA P-channel Trench MOSFET
Rev. 1 — 23 May 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
ESD protection up to 1 kV
AEC-Q101 qualified
Trench MOSFET technology
1.3 Applications
Relay driver
High-side loadswitch
Switching circuits
High-speed line driver
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
Conditions
Min Typ Max Unit
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
-50
20
V
V
VGS
-20
-
[1]
ID
VGS = -10 V; Tamb = 25 °C
-180 mA
Static characteristics
RDSon drain-source on-state
resistance
VGS = -10 V; ID = -100 mA;
Tj = 25 °C
-
4.5
7.5
Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
BSS84AK
NXP Semiconductors
50 V, 180 mA P-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
G
S
D
gate
D
3
2
source
drain
3
G
1
2
SOT23 (TO-236AB)
S
sym146
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BSS84AK
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
BSS84AK
Marking code[1]
%VS
[1] % = placeholder for manufacturing site code
BSS84AK
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 23 May 2011
2 of 16
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NXP Semiconductors
50 V, 180 mA P-channel Trench MOSFET
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
-50
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
VGS
-20
20
V
[1]
[1]
ID
VGS = -10 V; Tamb = 25 °C
VGS = -10 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
-
-180
-120
-0.7
350
420
1140
150
150
150
mA
mA
A
-
IDM
Ptot
peak drain current
-
[2]
[1]
total power dissipation
-
mW
mW
mW
°C
-
Tsp = 25 °C
-
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
Tamb
Tstg
°C
°C
Source-drain diode
[1]
[3]
IS
source current
Tamb = 25 °C
HBM
-
-
-180
mA
V
ESD maximum rating
VESD
electrostatic discharge voltage
1000
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
001aao121
001aao122
120
120
P
I
der
(%)
der
(%)
80
80
40
0
40
0
-75
-25
25
75
125
175
-75
-25
25
75
125
175
T (°C)
j
T (°C)
j
Fig 1. Normalized total power dissipation as a
function of junction temperature
Fig 2. Normalized continuous drain current as a
function of junction temperature
BSS84AK
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Product data sheet
Rev. 1 — 23 May 2011
3 of 16
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NXP Semiconductors
50 V, 180 mA P-channel Trench MOSFET
001aao123
-1
I
D
(A)
(1)
(2)
-1
-2
-3
-10
(3)
(4)
-10
-10
(5)
-1
2
-10
-1
-10
-10
V
DS
(V)
IDM is single pulse
(1) tp = 1 ms
(2) tp = 10 ms
(3) tp = 100 ms
(4) DC; Tsp = 25 °C
(5) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
BSS84AK
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Product data sheet
Rev. 1 — 23 May 2011
4 of 16
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50 V, 180 mA P-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
310
260
-
Max
370
300
115
Unit
K/W
K/W
K/W
[1]
[2]
thermal resistance from junction to ambient
in free air
-
-
-
Rth(j-sp)
thermal resistance from junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
017aaa015
3
10
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.5
0.33
0.2
2
10
0.25
0.1
0
0.05
0.02
0.01
10
1
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa016
3
10
Z
th(j-a)
duty cycle = 1
0.75
(K/W)
0.5
2
0.33
0.2
10
0.25
0.1
0.05
0.02
0.01
0
10
1
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 1 cm2
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BSS84AK
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 23 May 2011
5 of 16
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NXP Semiconductors
50 V, 180 mA P-channel Trench MOSFET
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = -10 µA; VGS = 0 V; Tj = 25 °C
-50
-
-
V
VGSth
IDSS
gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C
-1.1
-1.6
-2.1
-1
V
drain leakage current
VDS = -50 V; VGS = 0 V; Tj = 25 °C
VDS = -50 V; VGS = 0 V; Tj = 150 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; ID = -100 mA; Tj = 25 °C
VGS = -10 V; ID = -100 mA; Tj = 150 °C
VGS = -5 V; ID = -100 mA; Tj = 25 °C
VDS = -10 V; ID = -100 mA; Tj = 25 °C
-
-
-
-
-
-
-
-
-
µA
µA
µA
µA
Ω
-
-2
IGSS
gate leakage current
-
-10
-10
7.5
13.5
8.5
-
-
RDSon
drain-source on-state
resistance
4.5
8
Ω
5.7
150
Ω
gfs
forward transconductance
mS
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
td(on)
tr
total gate charge
VDS = -25 V; ID = -200 mA; VGS = -5 V;
Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
0.26
0.12
0.09
24
0.35
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
-
-
VDS = -25 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
36
-
4.5
1.3
13
-
VDS = -30 V; RL = 250 Ω; VGS = -10 V;
RG(ext) = 6 Ω; Tj = 25 °C
26
-
11
td(off)
tf
turn-off delay time
fall time
48
96
-
25
Source-drain diode
VSD
source-drain voltage
IS = -115 mA; VGS = 0 V; Tj = 25 °C
-0.48 -0.85 -1.2
V
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Product data sheet
Rev. 1 — 23 May 2011
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50 V, 180 mA P-channel Trench MOSFET
001aao124
001aao125
-3
-4
-5
-6
-0.20
-10
V
= -10 V -4.0 V -3.5 V
GS
I
D
I
D
(A)
(A)
-0.15
(3)
(2)
(1)
-10
-3.0 V
-0.10
-0.05
0
-10
-10
-2.5 V
0
-1
-2
-3
-4
0
-0.5
-1.0
-1.5
-2.0
-2.5
(V)
V
(V)
V
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = -5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
001aao126
001aao127
12
14
(1)
(2)
(3)
R
R
DSon
(Ω)
DSon
(Ω)
8
10
(4)
(5)
(1)
(2)
4
0
6
2
0
-0.1
-0.2
-0.3
-0.4
0
-2
-4
-6
-8
-10
(V)
I
D
(A)
V
GS
Tj = 25 °C
ID = -200 mA
(1) Tj = 150 °C
(2) Tj = 25 °C
(1) VGS = -3.0 V
(2) VGS = -3.5 V
(3) VGS = -4.0 V
(4) VGS = -5.0 V
(5) VGS = -10.0 V
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
BSS84AK
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 23 May 2011
7 of 16
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50 V, 180 mA P-channel Trench MOSFET
001aao128
001aao129
-0.20
2.0
1.5
1.0
0.5
0
I
a
D
(A)
(1)
(2)
-0.15
-0.10
-0.05
0
(2)
(1)
0
-1
-2
-3
-4
-60
0
60
120
180
V
GS
(V)
T (°C)
j
VDS > ID x RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
001aao130
001aao131
2
-3
10
V
GS(th)
(V)
C
(pF)
(1)
-2
-1
0
(1)
(2)
(2)
10
(3)
(3)
1
-1
2
-60
0
60
120
180
-10
-1
-10
-10
T (°C)
j
V
(V)
DS
ID = -0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
f = 1 MHz, VGS = 0 V
(1) Ciss
(2) Coss
(3) minimum values
(3) Crss
Fig 12. Gate-source threshold voltage as a function of
junction temperature
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BSS84AK
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 23 May 2011
8 of 16
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NXP Semiconductors
50 V, 180 mA P-channel Trench MOSFET
001aao132
-10
V
DS
V
GS
(V)
I
-8
-6
-4
-2
0
D
V
GS(pl)
V
V
GS(th)
GS
Q
Q
GS2
GS1
Q
Q
GD
GS
Q
G(tot)
003aaa508
0
0.2
0.4
0.6
Q
G
(nC)
ID = -0.2 A; VDS = -25 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Gate charge waveform definitions
001aao133
-0.3
I
S
(A)
-0.2
-0.1
(1)
(2)
0
0
-0.4
-0.8
-1.2
V
(V)
SD
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
BSS84AK
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 23 May 2011
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NXP Semiconductors
50 V, 180 mA P-channel Trench MOSFET
8. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig 17. Duty cycle definition
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
BSS84AK
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 23 May 2011
10 of 16
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NXP Semiconductors
50 V, 180 mA P-channel Trench MOSFET
9. Package outline
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-11-04
06-03-16
SOT23
TO-236AB
Fig 18. Package outline SOT23 (TO-236AB)
BSS84AK
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 23 May 2011
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50 V, 180 mA P-channel Trench MOSFET
10. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3×)
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 19. Reflow soldering footprint for SOT23 (TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
2.6
4.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 20. Wave soldering footprint for SOT23 (TO-236AB)
BSS84AK
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 23 May 2011
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50 V, 180 mA P-channel Trench MOSFET
11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BSS84AK v.1
20110523
Product data sheet
-
-
BSS84AK
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 23 May 2011
13 of 16
BSS84AK
NXP Semiconductors
50 V, 180 mA P-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
Document status [1] [2]
Product status [3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
Right to make changes — NXP Semiconductors reserves the right to make
12.2 Definitions
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
BSS84AK
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Product data sheet
Rev. 1 — 23 May 2011
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NXP Semiconductors
50 V, 180 mA P-channel Trench MOSFET
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BSS84AK
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 23 May 2011
15 of 16
BSS84AK
NXP Semiconductors
50 V, 180 mA P-channel Trench MOSFET
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Test information. . . . . . . . . . . . . . . . . . . . . . . . .10
Quality information . . . . . . . . . . . . . . . . . . . . . .10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .11
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .13
3
4
5
6
7
8
8.1
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .15
12.1
12.2
12.3
12.4
13
Contact information. . . . . . . . . . . . . . . . . . . . . .15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 23 May 2011
Document identifier: BSS84AK
相关型号：
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