BST52T/R [NXP]

TRANSISTOR 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA, PLASTIC, SC-62, 3 PIN, BIP General Purpose Small Signal;


型号：	BST52T/R
厂家：	NXP
描述：	TRANSISTOR 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA, PLASTIC, SC-62, 3 PIN, BIP General Purpose Small Signal 开关晶体管
文件：	总8页 (文件大小：123K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D109

BST50; BST51; BST52

NPN Darlington transistors

Product data sheet

2004 Dec 09

Supersedes data of 2001 Feb 20

NXP Semiconductors

Product data sheet

NPN Darlington transistors

BST50; BST51; BST52

FEATURES

PINNING

• High current (max. 0.5 A)

• Low voltage (max. 80 V)

• Integrated diode and resistor.

DESCRIPTION

emitter

collector

base

APPLICATIONS

• Industrial switching applications such as:

– Print hammer

– Solenoid

– Relay and lamp driving.

DESCRIPTION

NPN Darlington transistor in a SOT89 plastic package.

PNP complements: BST60, BST61 and BST62.

MARKING

sym080

TYPE NUMBER

BST50

MARKING CODE

AS1

AS2

AS3

BST51

BST52

Fig.1 Simplified outline (SOT89) and symbol.

ORDERING INFORMATION

TYPE NUMBER

PACKAGE

DESCRIPTION

NAME

VERSION

BST50

BST51

BST52

SC-62

plastic surface mounted package; collector pad for good heat

transfer; 3 leads

SOT89

2004 Dec 09

NXP Semiconductors

Product data sheet

NPN Darlington transistors

BST50; BST51; BST52

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

CONDITIONS

open emitter

MIN.

MAX.

UNIT

V_CBO

collector-base voltage

BST50

−

BST51

BST52

V_CES

collector-emitter voltage

BST50

V_BE= 0 V

−

BST51

BST52

V_EBO

I_C

I_CM

I_B

emitter-base voltage

collector current (DC)

peak collector current

base current (DC)

total power dissipation

junction temperature

ambient temperature

storage temperature

open collector

T_amb≤ 25 °C; note 1

100

1.3

150

+150

P_tot

T_j

°C

T_amb

T_stg

−65

Note

1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm².

For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R_th(j-a)

R_th(j-s)

thermal resistance from junction to ambient

note 1

K/W

thermal resistance from junction to soldering point

Note

1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm².

For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.

2004 Dec 09

NXP Semiconductors

Product data sheet

NPN Darlington transistors

BST50; BST51; BST52

CHARACTERISTICS

T_amb= 25 °C unless otherwise specified.

SYMBOL

I_CES

PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

collector-emitter cut-off current

BST50

V_BE= 0 V; V_CE= 45 V

V_BE= 0 V; V_CE= 60 V

V_BE= 0 V; V_CE= 80 V

I_C= 0 A; V_EB= 4 V

V_CE= 10 V; note 1; (see Fig.2)

I_C= 150 mA

−

BST51

−

BST52

I_EBO

h_FE

emitter-base cut-off current

DC current gain

1000

2000

−

I_C= 500 mA

−

V_CEsat

collector-emitter saturation

voltage

I_C= 500 mA; I_B= 0.5 mA

1.3

I_C= 500 mA; I_B= 0.5 mA;

−

T_j= 150 °C

V_BEsat

f_T

base-emitter saturation voltage I_C= 500 mA; I_B= 0.5 mA

−

1.9

transition frequency

I_C= 500 mA; V_CE= 5 V;

f = 100 MHz

200

−

MHz

Switching times (between 10% and 90% levels); (see Fig.3)

t_on

t_off

turn-on time

turn-off time

I_Con= 500 mA; I_Bon= 0.5 mA;

I_Boff= −0.5 mA

−

400

−

1500

Note

1. Pulse test: t_p≤ 300 μs; δ ≤ 0.02.

2004 Dec 09

NXP Semiconductors

Product data sheet

NPN Darlington transistors

BST50; BST51; BST52

MGD838

5000

handbook, full pagewidth

4000

3000

2000

1000

−1

(mA)

V_CE= 10 V.

Fig.2 DC current gain; typical values.

ndbook, full pagewidth

(probe)

oscilloscope

450 Ω

DUT

MLB826

V_i= 10 V; T = 200 μs; t_p= 6 μs; t_r= t_f≤ 3 ns.

R1 = 56 Ω; R2 = 10 kΩ; R_B= 10 kΩ; R_C= 18 Ω.

V_BB= −1.8 V; V_CC= 10.7 V.

Oscilloscope: input impedance Z_i= 50 Ω.

Fig.3 Test circuit for switching times.

2004 Dec 09

NXP Semiconductors

Product data sheet

NPN Darlington transistors

BST50; BST51; BST52

PACKAGE OUTLINE

Plastic surface-mounted package; collector pad for good heat transfer; 3 leads

SOT89

4 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

1.6

1.4

0.48

0.35

0.53

0.40

1.8

1.4

0.44

0.23

4.6

4.4

2.6

2.4

4.25

3.75

1.2

0.8

3.0

1.5

0.13

REFERENCES

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

JEDEC

JEITA

04-08-03

06-03-16

SOT89

TO-243

SC-62

2004 Dec 09

NXP Semiconductors

Product data sheet

NPN Darlington transistors

BST50; BST51; BST52

DATA SHEET STATUS

DOCUMENT

STATUS⁽¹⁾

PRODUCT

STATUS⁽²⁾

DEFINITION

Objective data sheet

Development

This document contains data from the objective specification for product

development.

Preliminary data sheet

Product data sheet

Qualification

Production

This document contains data from the preliminary specification.

This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DISCLAIMERS

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

General ⎯ Information in this document is believed to be

accurate and reliable. However, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequences of use of such information.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any inconsistency or conflict between information

in this document and such terms and conditions, the latter

will prevail.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this document, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for acceptance or the grant, conveyance or

implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Suitability for use ⎯ NXP Semiconductors products are

not designed, authorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in personal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefore such inclusion and/or use is at

the customer’s own risk.

Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national authorities.

Quick reference data ⎯ The Quick reference data is an

extract of the product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaustive or legally binding.

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use without further testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

2004 Dec 09

NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimers. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

Contact information

For additional information please visit: http://www.nxp.com

For sales offices addresses send e-mail to: salesaddresses@nxp.com

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

R75/05/pp8

Date of release: 2004 Dec 09

Document order number: 9397 750 13877

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