BT131-800E [NXP]

Triacs logic level; 双向可控硅逻辑电平
BT131-800E
型号: BT131-800E
厂家: NXP    NXP
描述:

Triacs logic level
双向可控硅逻辑电平

栅极 触发装置 可控硅 三端双向交流开关
文件: 总12页 (文件大小:71K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BT131 series  
Triacs logic level  
Rev. 08 — 9 September 2005  
Product data sheet  
1. Product profile  
1.1 General description  
Passivated, sensitive gate triacs in a SOT54 plastic package  
1.2 Features  
Designed to be interfaced directly to microcontrollers, logic integrated circuits and  
other low power gate trigger circuits.  
1.3 Applications  
General purpose switching and phase control  
1.4 Quick reference data  
VDRM 600 V (BT131-600)  
VDRM 800 V (BT131-800)  
IT(RMS) 1 A  
ITSM 12.5 A  
2. Pinning information  
Table 1:  
Pinning  
Description  
Pin  
1
Simplified outline  
Symbol  
main terminal 2 (T2)  
gate (G)  
T2  
T1  
G
2
3
main terminal 1 (T1)  
sym051  
3 2 1  
SOT54 (TO-92)  
BT131 series  
Philips Semiconductors  
Triacs logic level  
3. Ordering information  
Table 2:  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
BT131-600  
BT131-800  
TO-92  
plastic single-ended leaded (through hole) package; 3 leads  
SOT54  
4. Limiting values  
Table 3:  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
VDRM  
repetitive peak off-state voltage  
BT131-600  
[1]  
-
-
-
600  
800  
1
V
V
A
BT131-800  
IT(RMS)  
RMS on-state current  
all conduction angles;  
T
lead = 51.2 °C;  
see Figure 1, 4 and 5  
ITSM  
non-repetitive peak on-state  
current  
half sine wave; Tj = 25 °C  
prior to surge; see Figure 2  
and 3  
t = 20 ms  
t = 16.7 ms  
t = 10 ms  
-
-
-
12.5  
13.8  
1.28  
A
A
A2s  
I2t  
I2t for fusing  
dIT/dt  
rate of rise of on-state current  
ITM = 1.5 A; IG = 20 mA;  
dIG/dt = 200 mA/µs  
T2+ G+  
T2+ G−  
T2G−  
T2G+  
-
50  
50  
50  
10  
2
A/µs  
A/µs  
A/µs  
A/µs  
A
-
-
-
IGM  
peak gate current  
peak gate power  
-
PGM  
PG(AV)  
Tstg  
Tj  
-
5
W
average gate power  
storage temperature  
junction temperature  
over any 20 ms period  
-
0.1  
+150  
125  
W
40  
°C  
-
°C  
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The  
rate of rise of current should not exceed 3 A/µs.  
BT131_SER_8  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 08 — 9 September 2005  
2 of 12  
BT131 series  
Philips Semiconductors  
Triacs logic level  
003aab038  
35  
1.5  
T
P
α
lead(max)  
tot  
α =180°  
(W)  
(°C)  
120°  
α
65  
1
90°  
60°  
30°  
0.5  
95  
125  
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
I
(A)  
T(RMS)  
a = form factor = IT(RMS)/IT(AV)  
Fig 1. Total power dissipation as a function of average on-state current; maximum values  
003aab041  
16  
I
I
TSM  
I
T
TSM  
(A)  
t
12  
T
T = 25 °C max  
j
8
4
0
2
3
1
10  
10  
10  
n
f = 50 Hz  
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum  
values  
BT131_SER_8  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 08 — 9 September 2005  
3 of 12  
BT131 series  
Philips Semiconductors  
Triacs logic level  
003aab040  
3
10  
I
I
TSM  
t
T
I
TSM  
(A)  
T
T = 25 °C max  
j
2
10  
(1)  
(2)  
10  
10  
5  
4  
3  
2  
1  
10  
10  
10  
10  
t
(s)  
p
tp 20 ms  
(1) dIT/dt limit  
(2) T2G+ quadrant  
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values  
003aab039  
003aab042  
1.2  
3
51.2 °C  
I
T(RMS)  
(A)  
I
T(RMS)  
(A)  
0.8  
0.4  
0
2
1
0
2  
1  
50  
0
50  
100  
150  
(°C)  
10  
10  
1
10  
T
lead  
surge duration (s)  
f = 50 Hz; Tlead 51.2 °C  
(1) Tlead = 51.2 °C  
Fig 4. RMS on-state current as a function of surge  
duration, for sinusoidal currents; maximum  
values  
Fig 5. RMS on-state current as a function of lead  
temperature; maximum values  
BT131_SER_8  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 08 — 9 September 2005  
4 of 12  
BT131 series  
Philips Semiconductors  
Triacs logic level  
5. Thermal characteristics  
Table 4:  
Thermal characteristics  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
60  
80  
-
Unit  
K/W  
K/W  
K/W  
Rth(j-lead) thermal resistance from junction to full cycle  
-
-
-
-
lead  
half cycle  
-
[1]  
Rth(j-a)  
thermal resistance from junction to see Figure 6  
ambient  
150  
[1] Mounted on a printed-circuit board; lead length = 4 mm  
003aab045  
2
10  
Z
th(j-lead)  
(K/W)  
10  
(1)  
(2)  
1
P
D
1  
10  
t
t
p
2  
10  
5  
4  
3  
2  
1  
10  
10  
10  
10  
10  
1
10  
t
(s)  
p
(1) half cycle  
(2) full cycle  
Fig 6. Transient thermal impedance as a function of pulse width  
BT131_SER_8  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 08 — 9 September 2005  
5 of 12  
BT131 series  
Philips Semiconductors  
Triacs logic level  
6. Characteristics  
Table 5:  
Characteristics  
Tj = 25 °C unless otherwise stated.  
Symbol Parameter  
Static characteristics  
IGT gate trigger current  
Conditions  
Min  
Typ  
Max  
Unit  
VD = 12 V; IT = 100 mA; see  
Figure 8  
T2+ G+  
T2+ G−  
T2G−  
T2G+  
-
-
-
-
0.4  
1.3  
1.4  
3.8  
3
3
3
7
mA  
mA  
mA  
mA  
IL  
latching current  
VD = 12 V; IGT = 100 mA; see  
Figure 10  
T2+ G+  
T2+ G−  
T2G−  
T2G+  
-
-
-
-
-
1.2  
4
5
8
5
8
5
mA  
mA  
mA  
mA  
mA  
1
2.5  
1.3  
IH  
holding current  
VD = 12 V; IGT = 100 mA; see  
Figure 11  
VT  
on-state voltage  
IT = 1.4 A; see Figure 9  
-
1.2  
1.5  
V
VGT  
gate trigger voltage  
IT = 10 mA; gate open circuit;  
see Figure 7  
VD = 12 V; IGT = 100 mA  
-
0.7  
0.3  
1.5  
-
V
V
VD = 400 V; IGT = 100 mA;  
0.2  
Tj = 125 °C  
ID  
off-state current  
VD = VDRM(max); Tj = 125 °C  
-
0.1  
20  
0.5  
-
mA  
Dynamic characteristics  
dVD/dt  
rate of rise of off-state VDM = 67 % VDRM(max); Tj = 125 °C;  
10  
V/µs  
voltage  
exponential waveform; RGK = 1 k;  
see Figure 12  
dVcom/dt  
tgt  
rate of change of  
commutating current dIcom/dt = 0.5 A/ms  
VDM = 400 V; Tj = 125 °C;  
2
-
-
-
-
V/µs  
µs  
gate-controlled  
turn-on time  
ITM = 1.5 A; VD = VDRM(max)  
IG = 100 mA; dIG/dt = 5 A/µs  
;
2
BT131_SER_8  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 08 — 9 September 2005  
6 of 12  
BT131 series  
Philips Semiconductors  
Triacs logic level  
003aab044  
003aab043  
3
1.6  
I
V
GT(Tj)  
GT(Tj)  
I
V
GT(25°C)  
GT(25°C)  
(1)  
(2)  
2
1.2  
0.8  
0.4  
(3)  
(4)  
1
(4)  
(3)  
(2)  
(1)  
0
50  
0
50  
100  
150  
50  
0
50  
100  
150  
T (°C)  
j
T (°C)  
j
(1) T2G+  
(2) T2G−  
(3) T2+ G−  
(4) T2+ G+  
Fig 7. Normalized gate trigger voltage as a function of  
junction temperature  
Fig 8. Normalized gate trigger current as a function of  
junction temperature  
001aab100  
3
003aab037  
2
I
T
I
L(Tj)  
(A)  
I
L(25°C)  
1.6  
2
1.2  
0.8  
0.4  
0
(1)  
(2)  
(3)  
1
0
50  
0
50  
100  
150  
0
0.4  
0.8  
1.2  
1.6  
2
T (°C)  
j
V
(V)  
T
Vo = 0.92 V  
Rs = 0.4 .  
(1) Tj = 125 °C; typical values  
(2) Tj = 125 °C; maximum values  
(3) Tj = 25 °C; maximum values  
Fig 9. On-state current characteristics  
Fig 10. Normalized latching current as a function of  
junction temperature  
BT131_SER_8  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 08 — 9 September 2005  
7 of 12  
BT131 series  
Philips Semiconductors  
Triacs logic level  
001aab099  
003aab046  
3
3
10  
I
dV /dt  
D
H(Tj)  
(V/µs)  
I
H(25°C)  
2
2
10  
1
10  
0
50  
1
0
50  
100  
150  
0
50  
100  
150  
T (°C)  
j
T (°C)  
j
Fig 11. Normalized holding current as a function of  
junction temperature  
Fig 12. Rate of rise of off-state voltage as a function of  
junction temperature; minimum values  
7. Package information  
Epoxy meets requirements of UL94 V-0 at 18 inch.  
BT131_SER_8  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 08 — 9 September 2005  
8 of 12  
BT131 series  
Philips Semiconductors  
Triacs logic level  
8. Package outline  
Plastic single-ended leaded (through hole) package; 3 leads  
SOT54  
c
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
L
1
UNIT  
A
b
b
c
D
d
E
e
e
L
1
1
max.  
5.2  
5.0  
0.48  
0.40  
0.66  
0.55  
0.45  
0.38  
4.8  
4.4  
1.7  
1.4  
4.2  
3.6  
14.5  
12.7  
mm  
2.54  
1.27  
2.5  
Note  
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
04-06-28  
04-11-16  
SOT54  
TO-92  
SC-43A  
Fig 13. Package outline SOT54 (TO-92)  
BT131_SER_8  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 08 — 9 September 2005  
9 of 12  
BT131 series  
Philips Semiconductors  
Triacs logic level  
9. Revision history  
Table 6:  
Revision history  
Document ID  
BT131_SER_8  
Modifications:  
Release date Data sheet status  
20050909 Product data sheet  
Change notice Doc. number  
Supersedes  
-
-
BT131_SER_7  
The format of this data sheet has been redesigned to comply with the new presentation and  
information standard of Philips Semiconductors.  
Figure 5: corrected  
BT131_SER_7  
BT131_SER_6  
BT131_SER_5  
BT131_SER_4  
BT131_SER_3  
20040101  
20030801  
20001201  
20000501  
19980401  
Product specification  
Product specification  
Product specification  
Product specification  
Product specification  
-
-
-
-
-
-
-
-
-
-
BT131_SER_6  
BT131_SER_5  
BT131_SER_4  
BT131_SER_3  
-
BT131_SER_8  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 08 — 9 September 2005  
10 of 12  
BT131 series  
Philips Semiconductors  
Triacs logic level  
10. Data sheet status  
Level Data sheet status[1] Product status[2] [3]  
Definition  
I
Objective data  
Development  
This data sheet contains data from the objective specification for product development. Philips  
Semiconductors reserves the right to change the specification in any manner without notice.  
II  
Preliminary data  
Qualification  
This data sheet contains data from the preliminary specification. Supplementary data will be published  
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in  
order to improve the design and supply the best possible product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips Semiconductors reserves the  
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant  
changes will be communicated via a Customer Product/Process Change Notification (CPCN).  
[1]  
[2]  
Please consult the most recently issued data sheet before initiating or completing a design.  
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at  
URL http://www.semiconductors.philips.com.  
[3]  
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
customers using or selling these products for use in such applications do so  
at their own risk and agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
11. Definitions  
Short-form specification The data in a short-form specification is  
extracted from a full data sheet with the same type number and title. For  
detailed information see the relevant data sheet or data handbook.  
Right to make changes — Philips Semiconductors reserves the right to  
make changes in the products - including circuits, standard cells, and/or  
software - described or contained herein in order to improve design and/or  
performance. When the product is in full production (status ‘Production’),  
relevant changes will be communicated via a Customer Product/Process  
Change Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these products, conveys no  
licence or title under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that these products are  
free from patent, copyright, or mask work right infringement, unless otherwise  
specified.  
Limiting values definition Limiting values given are in accordance with  
the Absolute Maximum Rating System (IEC 60134). Stress above one or  
more of the limiting values may cause permanent damage to the device.  
These are stress ratings only and operation of the device at these or at any  
other conditions above those given in the Characteristics sections of the  
specification is not implied. Exposure to limiting values for extended periods  
may affect device reliability.  
Application information Applications that are described herein for any  
of these products are for illustrative purposes only. Philips Semiconductors  
make no representation or warranty that such applications will be suitable for  
the specified use without further testing or modification.  
13. Trademarks  
Notice — All referenced brands, product names, service names and  
12. Disclaimers  
trademarks are the property of their respective owners.  
Life support — These products are not designed for use in life support  
appliances, devices, or systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips Semiconductors  
14. Contact information  
For additional information, please visit: http://www.semiconductors.philips.com  
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com  
BT131_SER_8  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 08 — 9 September 2005  
11 of 12  
BT131 series  
Philips Semiconductors  
Triacs logic level  
15. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package information . . . . . . . . . . . . . . . . . . . . . 8  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11  
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Contact information . . . . . . . . . . . . . . . . . . . . 11  
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
© Koninklijke Philips Electronics N.V. 2005  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior  
written consent of the copyright owner. The information presented in this document does  
not form part of any quotation or contract, is believed to be accurate and reliable and may  
be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under  
patent- or other industrial or intellectual property rights.  
Date of release: 9 September 2005  
Document number: BT131_SER_8  
Published in The Netherlands  

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