BT132-600D [NXP]
Triacs logic level; 双向可控硅逻辑电平
| 型号： | BT132-600D |
| 厂家： | 
NXP |
| 描述： | Triacs logic level |
| 文件： | 总6页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Triacs
logic level
BT132 series D
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated, sensitive gate
triacs in a plastic envelope, intended
for use in general purpose
bidirectional switching and phase
control applications. These devices
are intended to be interfaced directly
to microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
SYMBOL PARAMETER
MAX. MAX. UNIT
BT132- 500D 600D
500 600
VDRM
IT(RMS)
ITSM
Repetitive peak off-state voltages
V
A
A
RMS on-state current
1
16
1
16
Non-repetitive peak on-state current
PINNING - TO92
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
main terminal 2
T2
T1
2
gate
3
main terminal 1
G
3
2 1
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
-500
-600
VDRM
Repetitive peak off-state
voltages
-
-
5001
6001
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak
on-state current
full sine wave; Tlead ≤51 ˚C
full sine wave; Tj = 25 ˚C prior to
surge
1
A
t = 20 ms
-
-
-
16
17.6
1.28
A
A
t = 16.7 ms
I2t
dIT/dt
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
t = 10 ms
A2s
ITM = 1.5 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
-
50
50
50
10
2
5
5
0.5
150
125
A/µs
A/µs
A/µs
A/µs
A
T2+ G-
-
T2- G-
-
T2- G+
-
IGM
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
VGM
PGM
PG(AV)
Tstg
Tj
-
V
-
-
W
over any 20 ms period
W
-40
-
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
January 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Triacs
logic level
BT132 series D
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-lead
Thermal resistance
junction to lead
Thermal resistance
junction to ambient
full cycle
-
-
-
-
-
60
80
-
K/W
K/W
K/W
half cycle
Rth j-a
pcb mounted;lead length = 4mm
150
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IGT
Gate trigger current
VD = 12 V; IT = 0.1 A
T2+ G+
-
-
-
-
2.0
2.5
2.5
5.0
5
5
mA
mA
mA
mA
T2+ G-
T2- G-
T2- G+
5
10
IL
Latching current
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
-
1.6
4.5
1.2
2.2
1.2
1.4
0.7
0.4
0.1
10
15
mA
mA
mA
mA
mA
V
V
V
mA
-
-
10
-
15
IH
VT
VGT
Holding current
On-state voltage
Gate trigger voltage
VD = 12 V; IGT = 0.1 A
IT = 5 A
-
10
-
1.70
1.5
-
VD = 12 V; IT = 0.1 A
-
0.25
-
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C
ID
Off-state leakage current VD = VDRM(max); Tj = 125 ˚C
0.5
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dVD/dt
tgt
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; RGK = 1 kΩ
ITM = 6 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
-
-
5
2
-
-
V/µs
µs
January 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Triacs
logic level
BT132 series D
IT(RMS) / A
Ptot / W
1.4
Tmb(max) / C
=180
41
53
65
77
89
101
1.2
1
51 C
1.2
1
120
90
1
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
60
30
113
125
0
0
-50
0
50
100
150
0
0
0.2
0.4
0.6
IT(RMS) / A
0.8
1
1.2
Tmb / C
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.4. Maximum permissible rms current IT(RMS) ,
versus lead temperature Tlead.
ITSM / A
IT(RMS) / A
1000
3
2.5
24
1.5
1
I
TSM
time
I
T
T
Tj initial = 25 C max
100
dIT/dt limit
T2- G+ quadrant
0.5
10
10us
0
100us
1ms
T / s
10ms
100ms
0.01
0.1
surge duration / s
1
10
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tlead ≤ 51˚C.
VGT(Tj)
VGT(25 C)
ITSM / A
20
15
10
1.6
1.4
1.2
1
I
TSM
time
I
T
T
Tj initial = 25 C max
0.8
0.6
0.4
5
0
10
100
1000
-50
0
50
Tj / C
100
150
Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
January 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Triacs
logic level
BT132 series D
IGT(Tj)
IGT(25 C)
IT / A
12
10
8
Tj = 125 C
Tj = 25 C
3
T2+ G+
T2+ G-
T2- G-
T2- G+
typ
max
2.5
2
Vo = 1.27 V
Rs = 0.091 ohms
6
1.5
1
4
2
0.5
0
0
0
0.5
1
1.5
VT / V
2
2.5
3
-50
0
50
100
150
Tj / C
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
Zth j-sp (K/W)
100
10
3
2.5
2
unidirectional
bidirectional
1
1.5
1
t
P
D
p
0.1
0.01
t
0.5
0
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
-50
0
50
Tj / C
100
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.11. Transient thermal impedance Zth j-lead, versus
pulse width tp.
dVD/dt (V/us)
1000
IH(Tj)
IH(25C)
3
2.5
2
100
10
1
1.5
1
0.5
0
-50
0
50
100
150
0
50
100
150
Tj / C
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
January 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Triacs
logic level
BT132 series D
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.2 g
2.54
0.66
0.56
1.6
4.2 max
4.8 max
5.2 max
12.7 min
0.48
0.40
0.40
min
3 2 1
Fig.13. TO92 Variant; plastic envelope.
Notes
1. Epoxy meets UL94 V0 at 1/8".
January 1998
5
Rev 1.000
Philips Semiconductors
Product specification
Triacs
logic level
BT132 series D
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
January 1998
6
Rev 1.000
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