BT134W-500D-T [NXP]

TRIAC, 500 V, 1 A, 4 QUADRANT LOGIC LEVEL TRIAC;


型号：	BT134W-500D-T
厂家：	NXP
描述：	TRIAC, 500 V, 1 A, 4 QUADRANT LOGIC LEVEL TRIAC 可控硅
文件：	总7页 (文件大小：61K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Philips Semiconductors

Product specification

Triacs

BT134W series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated triacs in a plastic

envelope suitable for surface

mounting, intended for use in

SYMBOL PARAMETER

MAX. MAX. MAX. UNIT

BT134W-

500

600

800

applications

requiring

high

BT134W- 500F 600F 800F

BT134W- 500G 600G 800G

bidirectional transient and blocking

voltage capability and high thermal

V_DRM

Repetitive peak off-state

voltages

500

600

800

cycling

performance.

Typical

applications include motor control,

industrial and domestic lighting,

heating and static switching.

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak on-state

current

PINNING - SOT223

PIN CONFIGURATION

SYMBOL

DESCRIPTION

main terminal 1

main terminal 2

gate

tab main terminal 2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-500

-600

-800

800

V_DRM

Repetitive peak off-state

voltages

500¹

600¹

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak

on-state current

full sine wave; T_sp≤ 108 ˚C

full sine wave; T_j= 25 ˚C prior to

surge

t = 20 ms

0.5

t = 16.7 ms

I²t

dI_T/dt

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

t = 10 ms

A²s

I_TM= 1.5 A; I_G= 0.2 A;

dI_G/dt = 0.2 A/µs

T2+ G+

0.5

150

125

A/µs

T2+ G-

T2- G-

T2- G+

I_GM

Peak gate current

Peak gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

V_GM

P_GM

P_G(AV)

T_stg

T_j

over any 20 ms period

-40

˚C

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may

switch to the on-state. The rate of rise of current should not exceed 3 A/µs.

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Triacs

BT134W series

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-sp}

Thermal resistance

junction to solder point

Thermal resistance

junction to ambient

full or half cycle

K/W

R_{th j-a}

pcb mounted; minimum footprint

pcb mounted; pad area as in fig:14

156

K/W

STATIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP.

MAX.

...F

UNIT

BT134W-

V_D= 12 V; I_T= 0.1 A

...

...G

I_GT

Gate trigger current

Latching current

Holding current

T2+ G+

T2+ G-

T2- G-

T2- G+

100

I_L

V_D= 12 V; I_GT= 0.1 A

T2+ G+

T2+ G-

T2- G-

T2- G+

I_H

V_D= 12 V; I_GT= 0.1 A

V_T

On-state voltage

I_T= 2 A

1.2

0.7

0.4

1.50

1.5

V_GT

Gate trigger voltage

V_D= 12 V; I_T= 0.1 A

V_D= 400 V; I_T= 0.1 A;

T_j= 125 ˚C

0.25

I_D

Off-state leakage current V_D= V_DRM(max)

;

0.1

0.5

T_j= 125 ˚C

DYNAMIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

BT134W-

V_DM=67% V_DRM(max)

...

...F

...G

dV_D/dt

dV_com/dt

t_gt

Critical rate of rise of

off-state voltage

;

100

200

250

V/µs

µs

T_j= 125 ˚C; exponential

waveform; gate open

circuit

Critical rate of change of

commutating voltage

V_DM= 400 V; T_j= 95 ˚C;

I_T(RMS)= 1 A;

dI_com/dt = 1.8 A/ms; gate

open circuit

Gate controlled turn-on

time

I_TM= 1.5 A;

V_D= V_DRM(max); I_G= 0.1 A;

dI_G/dt = 5 A/µs;

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Triacs

BT134W series

BT134W

Ptot / W

1.4

IT(RMS) / A

Tsp(max) / C

= 180

104

107

110

1.2

108 C

1.2

120

0.8

0.6

0.4

0.2

113

116

0.8

0.6

0.4

0.2

119

122

125

0.2

0.4

0.6

0.8

1.2

-50

100

150

Tsp / C

IT(RMS) / A

Fig.1. Maximum on-state dissipation, P_tot, versus rms

on-state current, I_T(RMS), where α = conduction angle.

Fig.4. Maximum permissible rms current I_T(RMS)

versus solder point temperature T_sp.

IT(RMS) / A

BT134W

ITSM / A

1.5

1000

100

TSM

time

Tj initial = 25 C max

dI_T/dt limit

T2- G+ quadrant

0.5

10us

100us

1ms

T / s

10ms

100ms

0.01

0.1

surge duration / s

Fig.2. Maximum permissible non-repetitive peak

on-state current I_TSM, versus pulse width t_p, for

sinusoidal currents, t_p≤ 20ms.

Fig.5. Maximum permissible repetitive rms on-state

current I_T(RMS), versus surge duration, for sinusoidal

currents, f = 50 Hz; T_sp≤ 108˚C.

BT134W

VGT(Tj)

VGT(25 C)

ITSM / A

BT136

1.6

1.4

1.2

TSM

time

Tj initial = 25 C max

0.8

0.6

0.4

100

1000

-50

Tj / C

100

150

Number of cycles at 50Hz

Fig.3. Maximum permissible non-repetitive peak

on-state current I_TSM, versus number of cycles, for

sinusoidal currents, f = 50 Hz.

Fig.6. Normalised gate trigger voltage

V_GT(T_j)/ V_GT(25˚C), versus junction temperature T_j.

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Triacs

BT134W series

BT134W

IGT(Tj)

IGT(25 C)

IT / A

1.5

BT136

Tj = 125 C

Tj = 25 C

T2+ G+

T2+ G-

T2- G-

T2- G+

2.5

Vo = 1.0 V

Rs = 0.21 Ohms

typ

1.5

max

0.5

1.5

-50

Tj / C

100

150

VT / V

Fig.7. Normalised gate trigger current

I_GT(T_j)/ I_GT(25˚C), versus junction temperature T_j.

Fig.10. Typical and maximum on-state characteristic.

IL(Tj)

IL(25 C)

BT134W

Zth j-sp (K/W)

100

TRIAC

2.5

unidirectional

bidirectional

1.5

0.1

0.01

0.5

10us

0.1ms

1ms

10ms

tp / s

0.1s

10s

-50

Tj / C

100

150

Fig.8. Normalised latching current I_L(T_j)/ I_L(25˚C),

versus junction temperature T_j.

Fig.11. Transient thermal impedance Z_{th j-sp}, versus

pulse width t_p.

dVcom/dt (V/us)

1000

IH(Tj)

IH(25C)

TRIAC

2.5

off-state dV/dt limit

BT134...G SERIES

BT134 SERIES

100

BT134...F SERIES

1.5

0.5

dIcom/dt = 5.1 3.9

A/ms

2.3 1.8 1.4

100

-50

Tj / C

100

150

Tj / C

Fig.9. Normalised holding current I_H(T_j)/ I_H(25˚C),

versus junction temperature T_j.

Fig.12. Typical commutation dV/dt versus junction

temperature, parameter commutation dI_T/dt. The triac

should commutate when the dV/dt is below the value

on the appropriate curve for pre-commutation dI_T/dt.

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Triacs

BT134W series

MOUNTING INSTRUCTIONS

Dimensions in mm.

3.8

min

1.5

min

2.3

6.3

1.5

min

(3x)

1.5

min

4.6

Fig.13. soldering pattern for surface mounting SOT223.

PRINTED CIRCUIT BOARD

Dimensions in mm.

4.5

4.6

Fig.14. PCB for thermal resistance and power rating for SOT223.

PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick).

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Triacs

BT134W series

MECHANICAL DATA

Dimensions in mm

Net Mass: 0.11 g

6.7

6.3

3.1

2.9

0.32

0.24

0.2

0.10

0.02

7.3

6.7

3.7

3.3

max

1.05

0.85

0.80

0.60

2.3

1.8

max

0.1

(4x)

4.6

Fig.15. SOT223 surface mounting package.

Notes

1. For further information, refer to Philips publication SC18 " SMD Footprint Design and Soldering Guidelines".

Order code: 9397 750 00505.

2. Epoxy meets UL94 V0 at 1/8".

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Triacs

BT134W series

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1997

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

September 1997

Rev 1.200

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