BT136B-500F [NXP]

Triacs; 双向可控硅
BT136B-500F
型号: BT136B-500F
厂家: NXP    NXP
描述:

Triacs
双向可控硅

可控硅
文件: 总6页 (文件大小:54K)
中文:  中文翻译
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Philips Semiconductors  
Product specification  
Triacs  
BT136B series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated triacs in a plastic  
envelope suitable for surface  
mounting, intended for use in  
SYMBOL PARAMETER  
MAX. MAX. MAX. UNIT  
BT136B-  
500  
600  
800  
applications  
requiring  
high  
BT136B- 500F 600F 800F  
BT136B- 500G 600G 800G  
bidirectional transient and blocking  
voltage capability and high thermal  
VDRM  
Repetitive peak off-state  
voltages  
500  
600  
800  
V
cycling  
performance.  
Typical  
applications include motor control,  
industrial and domestic lighting,  
heating and static switching.  
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak on-state  
current  
4
25  
4
25  
4
25  
A
A
PINNING - SOT404  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
mb  
T2  
T1  
2
main terminal 2  
gate  
3
2
mb main terminal 2  
1
3
G
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-500  
-600  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
5001  
6001  
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak  
on-state current  
full sine wave; Tmb 107 ˚C  
full sine wave; Tj = 25 ˚C prior to  
surge  
4
A
t = 20 ms  
-
-
-
25  
27  
3.1  
A
A
t = 16.7 ms  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
t = 10 ms  
A2s  
ITM = 6 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
T2+ G+  
-
50  
50  
50  
10  
2
5
5
0.5  
150  
125  
A/µs  
A/µs  
A/µs  
A/µs  
A
T2+ G-  
-
T2- G-  
-
T2- G+  
-
IGM  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
VGM  
PGM  
PG(AV)  
Tstg  
Tj  
-
V
-
-
W
over any 20 ms period  
W
-40  
-
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.  
October 1997  
1
Rev 1.100  
Philips Semiconductors  
Product specification  
Triacs  
BT136B series  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Thermal resistance  
full cycle  
-
-
-
-
-
55  
3.0  
3.7  
-
K/W  
K/W  
K/W  
junction to mounting base half cycle  
Rth j-a  
Thermal resistance  
junction to ambient  
minimum footprint, FR4 board  
STATIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP.  
MAX.  
...F  
UNIT  
BT136B-  
VD = 12 V; IT = 0.1 A  
...  
...G  
IGT  
Gate trigger current  
Latching current  
Holding current  
T2+ G+  
-
-
-
-
5
8
11  
30  
35  
35  
35  
70  
25  
25  
25  
70  
50  
50  
mA  
mA  
mA  
mA  
T2+ G-  
T2- G-  
50  
T2- G+  
100  
IL  
VD = 12 V; IGT = 0.1 A  
T2+ G+  
-
-
-
-
-
7
16  
5
20  
30  
20  
30  
15  
20  
30  
20  
30  
15  
30  
45  
30  
45  
30  
mA  
mA  
mA  
mA  
mA  
T2+ G-  
T2- G-  
T2- G+  
7
IH  
VD = 12 V; IGT = 0.1 A  
5
VT  
On-state voltage  
IT = 5 A  
-
-
1.4  
0.7  
0.4  
1.70  
1.5  
-
V
V
V
VGT  
Gate trigger voltage  
VD = 12 V; IT = 0.1 A  
VD = 400 V; IT = 0.1 A;  
Tj = 125 ˚C  
0.25  
ID  
Off-state leakage current VD = VDRM(max)  
;
-
0.1  
0.5  
mA  
Tj = 125 ˚C  
DYNAMIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
TYP. MAX. UNIT  
BT136B-  
VDM = 67% VDRM(max)  
...  
...F  
...G  
dVD/dt  
dVcom/dt  
tgt  
Critical rate of rise of  
off-state voltage  
;
100  
50  
200  
250  
50  
2
-
-
-
V/µs  
V/µs  
µs  
Tj = 125 ˚C; exponential  
waveform; gate open  
circuit  
Critical rate of change of  
commutating voltage  
VDM = 400 V; Tj = 95 ˚C;  
IT(RMS) = 4 A;  
-
-
-
-
10  
-
dIcom/dt = 1.8 A/ms; gate  
open circuit  
Gate controlled turn-on  
time  
ITM = 6 A; VD = VDRM(max);  
IG = 0.1 A; dIG/dt = 5 A/µs  
October 1997  
2
Rev 1.100  
Philips Semiconductors  
Product specification  
Triacs  
BT136B series  
IT(RMS) / A  
Ptot / W  
8
Tmb(max) / C  
5
4
3
2
1
0
101  
104  
107  
110  
113  
116  
119  
122  
125  
7
107 C  
= 180  
120  
1
6
5
4
3
2
1
0
90  
60  
30  
0
1
2
3
4
5
-50  
0
50  
100  
150  
IT(RMS) / A  
Tmb / C  
Fig.1. Maximum on-state dissipation, Ptot, versus rms  
on-state current, IT(RMS), where α = conduction angle.  
Fig.4. Maximum permissible rms current IT(RMS)  
versus mounting base temperature Tmb.  
,
IT(RMS) / A  
ITSM / A  
12  
10  
8
1000  
100  
10  
I
TSM  
time  
I
T
T
Tj initial = 25 C max  
6
dIT/dt limit  
4
T2- G+ quadrant  
2
0
10us  
100us  
1ms  
T / s  
10ms  
100ms  
0.01  
0.1  
1
10  
surge duration / s  
Fig.2. Maximum permissible non-repetitive peak  
on-state current ITSM, versus pulse width tp, for  
sinusoidal currents, tp 20ms.  
Fig.5. Maximum permissible repetitive rms on-state  
current IT(RMS), versus surge duration, for sinusoidal  
currents, f = 50 Hz; Tmb 107˚C.  
VGT(Tj)  
VGT(25 C)  
ITSM / A  
30  
25  
20  
15  
10  
5
1.6  
1.4  
1.2  
1
I
TSM  
time  
I
T
T
Tj initial = 25 C max  
0.8  
0.6  
0.4  
0
1
10  
100  
1000  
-50  
0
50  
Tj / C  
100  
150  
Number of cycles at 50Hz  
Fig.3. Maximum permissible non-repetitive peak  
on-state current ITSM, versus number of cycles, for  
sinusoidal currents, f = 50 Hz.  
Fig.6. Normalised gate trigger voltage  
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.  
October 1997  
3
Rev 1.100  
Philips Semiconductors  
Product specification  
Triacs  
BT136B series  
IGT(Tj)  
IGT(25 C)  
IT / A  
12  
10  
8
Tj = 125 C  
Tj = 25 C  
3
T2+ G+  
T2+ G-  
T2- G-  
T2- G+  
typ  
max  
2.5  
2
Vo = 1.27 V  
Rs = 0.091 ohms  
6
1.5  
1
4
2
0.5  
0
0
-50  
0
50  
Tj / C  
100  
150  
0
0.5  
1
1.5  
VT / V  
2
2.5  
3
Fig.7. Normalised gate trigger current  
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.  
Fig.10. Typical and maximum on-state characteristic.  
IL(Tj)  
IL(25 C)  
Zth j-mb (K/W)  
10  
1
3
2.5  
2
unidirectional  
bidirectional  
1.5  
1
t
P
D
0.1  
0.01  
p
t
0.5  
0
10us  
0.1ms  
1ms  
10ms  
tp / s  
0.1s  
1s  
10s  
-50  
0
50  
Tj / C  
100  
150  
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),  
versus junction temperature Tj.  
Fig.11. Transient thermal impedance Zth j-mb, versus  
pulse width tp.  
dVcom/dt (V/us)  
1000  
IH(Tj)  
IH(25C)  
3
2.5  
2
off-state dV/dt limit  
BT136...G SERIES  
BT136 SERIES  
100  
BT136...F SERIES  
1.5  
1
10  
0.5  
0
dIcom/dt = 5.1 3.9  
A/ms  
3
2.3 1.8 1.4  
100  
1
-50  
0
50  
Tj / C  
100  
150  
0
50  
150  
Tj / C  
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),  
versus junction temperature Tj.  
Fig.12. Typical commutation dV/dt versus junction  
temperature, parameter commutation dIT/dt. The triac  
should commutate when the dV/dt is below the value  
on the appropriate curve for pre-commutation dIT/dt.  
October 1997  
4
Rev 1.100  
Philips Semiconductors  
Product specification  
Triacs  
BT136B series  
MECHANICAL DATA  
Dimensions in mm  
Net Mass: 1.4 g  
4.5 max  
1.4 max  
10.3 max  
11 max  
15.4  
2.5  
0.85 max  
(x2)  
0.5  
2.54 (x2)  
Fig.13. SOT404 : centre pin connected to mounting base.  
Notes  
1. Epoxy meets UL94 V0 at 1/8".  
MOUNTING INSTRUCTIONS  
Dimensions in mm  
11.5  
9.0  
17.5  
2.0  
3.8  
5.08  
Fig.14. SOT404 : minimum pad sizes for surface mounting.  
Notes  
1. Plastic meets UL94 V0 at 1/8".  
October 1997  
5
Rev 1.100  
Philips Semiconductors  
Product specification  
Triacs  
BT136B series  
DEFINITIONS  
Data sheet status  
Objective specification  
This data sheet contains target or goal specifications for product development.  
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.  
Product specification  
This data sheet contains final product specifications.  
Limiting values  
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
operation of the device at these or at any other conditions above those given in the Characteristics sections of  
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
Philips Electronics N.V. 1997  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
copyright owner.  
The information presented in this document does not form part of any quotation or contract, it is believed to be  
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
industrial or intellectual property rights.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices or systems where malfunction of these  
products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
from such improper use or sale.  
October 1997  
6
Rev 1.100  

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