BT139B-600E/T3 [NXP]
TRIAC, 600 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-263AB, PLASTIC, D2PAK-3;
| 型号： | BT139B-600E/T3 |
| 厂家： | 
NXP |
| 描述： | TRIAC, 600 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-263AB, PLASTIC, D2PAK-3 栅 三端双向交流开关 栅极 |
| 文件： | 总12页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BT139B series E
Triacs; sensitive gate
Rev. 03 — 23 September 2004
Product data sheet
1. Product profile
1.1 General description
Passivated, sensitive gate triacs in a SOT404 SMD plastic package.
1.2 Features
■ High sensitivity in all four quadrants.
1.3 Applications
■ General purpose bidirectional switching ■ Phase control.
1.4 Quick reference data
■ VDRM ≤ 600 V (BT139B-600E)
■ VDRM ≤ 800 V (BT139B-800E)
■ IT(RMS) ≤ 16 A
■ ITSM ≤ 155 A
■ IGT ≤ 10 mA (T2+ G+; T2+ G−; T2− G−)
■ IGT ≤ 25 mA (T2− G+).
2. Pinning information
Table 1:
Pinning
Description
Pin
1
Simplified outline
Symbol
main terminal 1 (T1)
main terminal 2 (T2)
gate (G)
T2
T1
G
2
mb
3
sym051
mb
mounting base, connected to main
terminal 2 (T2)
2
1
3
SOT404 (D2-PAK)
BT139B series E
Philips Semiconductors
Triacs; sensitive gate
3. Ordering information
Table 2:
Ordering information
Type number
Package
Name
-
Description
Version
BT139B-600E
BT139B-800E
plastic single-ended surface mounted package (Philips version of
D2-PAK); 3 leads (one lead cropped)
SOT404
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDRM
repetitive peak off-state voltage
BT139B-600E
[1]
-
-
-
600
800
16
V
V
A
BT139B-800E
IT(RMS)
RMS on-state current
full sinewave;
T
mb ≤ 99 °C; Figure 4
and Figure 5
ITSM
non-repetitive peak on-state current full sine wave;
Tj = 25 °C prior to
surge; Figure 2 and
Figure 3
t = 20 ms
-
-
-
155
170
120
A
t = 16.7 ms
A
A2s
I2t
I2t for fusing
t = 10 ms
dIT/dt
repetitive rate of rise of on-state
current after triggering
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
T2+ G−
T2− G−
T2− G+
-
50
50
50
10
2
A/µs
A/µs
A/µs
A/µs
A
-
-
-
IGM
peak gate current
peak gate voltage
peak gate power
-
VGM
PGM
PG(AV)
Tstg
Tj
-
5
V
-
5
W
average gate power
storage temperature
junction temperature
over any 20 ms period
-
0.5
+150
125
W
−40
°C
-
°C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/µs.
9397 750 13438
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 23 September 2004
2 of 12
BT139B series E
Philips Semiconductors
Triacs; sensitive gate
001aab093
95
25
P
tot
T
mb(max)
α =
(W)
20
(°C)
180
101
107
113
119
125
120
90
15
10
60
30
α
5
0
α
0
5
10
15
20
I
(A)
T(RMS)
α = conduction angle.
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values.
001aab102
160
I
TSM
(A)
I
I
TSM
T
120
T
= 25 °C max
t
T
j(initial)
80
40
0
2
3
1
10
10
10
n
f = 50 Hz.
Fig 2. Non-repetitive peak on-state current as a function of the number (n) of sinusoidal current cycles;
maximum values.
9397 750 13438
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 23 September 2004
3 of 12
BT139B series E
Philips Semiconductors
Triacs; sensitive gate
001aab092
3
10
I
TSM
(A)
2
10
(1)
(2)
I
I
TSM
T
T
t
T
= 25 °C max
j(initial)
10
10
−2
−1
2
10
1
10
10
T (ms)
tp ≤ 20 ms.
(1) dIT/dt limit.
(2) T2− G+ quadrant.
Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values.
001aab091
001aab090
20
50
I
T(RMS)
(A)
I
T(RMS)
(A)
(1)
40
30
20
10
0
15
10
5
0
−50
−2
−1
0
50
100
150
10
10
1
10
T
(°C)
surge duration (s)
mb
f = 50 Hz; Tmb ≤ 99 °C.
(1) Tmb = 99 °C.
Fig 4. RMS on-state current as a function of surge
duration; maximum values.
Fig 5. RMS on-state current as a function of mounting
base temperature; maximum values.
9397 750 13438
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 23 September 2004
4 of 12
BT139B series E
Philips Semiconductors
Triacs; sensitive gate
5. Thermal characteristics
Table 4:
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
1.2
Unit
K/W
K/W
thermal resistance
from junction to
mounting base
full cycle; Figure 6
half cycle; Figure 6
-
-
-
-
1.7
Rth(j-a)
thermal resistance
from junction to
ambient
minimum footprint;
FR4 printed-circuit board
-
55
-
K/W
001aab098
10
Z
th(j-mb)
(K/W)
(1)
(2)
1
−1
−2
−3
10
10
10
P
D
t
t
p
−5
−4
−3
−2
−1
10
10
10
10
10
1
10
t
(s)
p
(1) Unidirectional.
(2) Bidirectional.
Fig 6. Transient thermal impedance as a function of pulse width.
9397 750 13438
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 23 September 2004
5 of 12
BT139B series E
Philips Semiconductors
Triacs; sensitive gate
6. Characteristics
Table 5:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Static characteristics
IGT gate trigger current
Conditions
Min
Typ
Max
Unit
VD = 12 V; IT = 0.1 A; Figure 8
T2+ G+
T2+ G−
T2− G−
T2− G+
-
-
-
-
2.5
4
10
10
10
25
mA
mA
mA
mA
5
11
IL
latching current
VD = 12 V; IGT = 0.1 A;
Figure 10
T2+ G+
T2+ G−
T2− G−
T2− G+
-
-
-
-
-
3.2
16
4
30
40
30
40
45
mA
mA
mA
mA
mA
5.5
4
IH
holding current
VD = 12 V; IGT = 0.1 A;
Figure 11
VT
on-state voltage
IT = 20 A; Figure 9
-
1.2
0.7
0.4
1.6
1.5
-
V
V
V
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Figure 7
-
VD = 400 V; IT = 0.1 A;
0.25
Tj = 125 °C
ID
off-state leakage
current
VD = VDRM(max); Tj = 125 °C
-
0.1
0.5
mA
Dynamic characteristics
dVD/dt critical rate of rise of
VDM = 67 % VDRM(max)
Tj = 125 °C; exponential
waveform; gate open circuit
;
-
-
50
2
-
-
V/µs
µs
off-state voltage
tgt
gate controlled
turn-on time
ITM = 20 A; VD = VDRM(max);
IG = 0.1 A; dIG/dt = 5 A/µs
9397 750 13438
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 23 September 2004
6 of 12
BT139B series E
Philips Semiconductors
Triacs; sensitive gate
001aab101
001aab448
1.6
3
V
I
( )
GT Tj
GT(Tj)
I
V
GT(25°C)
GT(25°C)
(1)
(2)
(3)
1.2
0.8
0.4
2
(4)
1
0
−50
−50
0
50
100
150
0
50
100
150
T (°C)
j
T (°C)
j
(1) T2− G+.
(2) T2+ G−.
(3) T2− G−.
(4) T2+ G+.
Fig 7. Normalized gate trigger voltage as a function of
junction temperature.
Fig 8. Normalized gate trigger current as a function of
junction temperature.
001aab100
001aab094
3
50
I
T
I
(A)
40
L(Tj)
(1)
(2)
(3)
I
L(25°C)
2
1
0
30
20
10
0
−50
0
50
100
150
0
1
2
3
T (°C)
j
V
(V)
T
VO = 1.195 V.
Rs = 0.018 Ω.
(1) Tj = 125 °C; typical values.
(2) Tj = 25 °C; maximum values.
(3) Tj = 125 °C; maximum values.
Fig 9. On-state current characteristics.
Fig 10. Normalized latching current as a function of
junction temperature.
9397 750 13438
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 23 September 2004
7 of 12
BT139B series E
Philips Semiconductors
Triacs; sensitive gate
001aab099
001aab452
3
3
10
I
H(Tj)
I
H(25°C)
dV /dt
D
(V/µs)
2
2
10
1
0
−50
10
0
50
100
150
0
50
100
150
T (°C)
j
T (°C)
j
Fig 11. Normalized holding current as a function of
junction temperature.
Fig 12. Critical rate of rise of off-state voltage as a
function of junction temperature; minimum
values.
9397 750 13438
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 23 September 2004
8 of 12
BT139B series E
Philips Semiconductors
Triacs; sensitive gate
7. Package outline
2
Plastic single-ended surface mounted package (Philips version of D -PAK); 3 leads
(one lead cropped)
SOT404
A
A
E
1
mounting
base
D
1
D
H
D
2
L
p
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
D
E
A
A
b
UNIT
c
D
e
L
H
Q
1
1
p
D
max.
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
1.60
1.20
10.30
9.70
2.90 15.80 2.60
2.10 14.80 2.20
mm
11
2.54
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
99-06-25
01-02-12
SOT404
Fig 13. Package outline; SOT404 (D2-PAK).
9397 750 13438
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 23 September 2004
9 of 12
BT139B series E
Philips Semiconductors
Triacs; sensitive gate
8. Revision history
Table 6:
Revision history
Document ID
Release date Data sheet status Change notice Doc. number
Supersedes
BT139B_SERIES_E_3 20040923
Product data sheet
-
9397 750 13438 BT139B_SERIES_E_2
Modifications:
• The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
BT139B_SERIES_E_2 20010701
BT139B_SERIES_E_1 19970301
Product
specification
-
-
-
-
BT139B_SERIES_E_1
-
Product
specification
9397 750 13438
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 23 September 2004
10 of 12
BT139B series E
Philips Semiconductors
Triacs; sensitive gate
9. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10. Definitions
11. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
12. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 13438
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 23 September 2004
11 of 12
BT139B series E
Philips Semiconductors
Triacs; sensitive gate
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information . . . . . . . . . . . . . . . . . . . . 11
3
4
5
6
7
8
9
10
11
12
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 23 September 2004
Document number: 9397 750 13438
Published in The Netherlands
相关型号：
©2020 ICPDF网 联系我们和版权申明