BT139B-800E [PHILIPS]
TRIAC, 800V V(DRM), 16A I(T)RMS,;
| 型号： | BT139B-800E |
| 厂家： | 
PHILIPS SEMICONDUCTORS |
| 描述： | TRIAC, 800V V(DRM), 16A I(T)RMS, 栅 三端双向交流开关 栅极 |
| 文件： | 总6页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT139B series E
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated, sensitive gate triacs in a
plastic envelope suitable for surface
mounting, intended for use in general
purpose bidirectional switching and
phase control applications, where high
sensitivity is required in all four
quadrants.
SYMBOL
PARAMETER
MAX. MAX. UNIT
BT139B- 600E 800E
VDRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
600
800
V
IT(RMS)
ITSM
16
140
16
140
A
A
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
main terminal 1
mb
T2
T1
2
main terminal 2
gate
3
2
mb main terminal 2
1
3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
-600
-800
800
VDRM
Repetitive peak off-state
voltages
-
-
6001
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak
on-state current
full sine wave; Tmb ≤ 99 ˚C
full sine wave; Tj = 25 ˚C prior to
surge
16
A
t = 20 ms
-
-
-
140
150
98
A
A
t = 16.7 ms
I2t
dIT/dt
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
t = 10 ms
A2s
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
-
50
50
50
10
2
5
5
0.5
150
125
A/µs
A/µs
A/µs
A/µs
A
T2+ G-
-
T2- G-
-
T2- G+
-
IGM
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
VGM
PGM
PG(AV)
Tstg
Tj
-
V
-
-
W
over any 20 ms period
W
-40
-
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
July 2001
1
Rev 1.200
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT139B series E
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Thermal resistance
full cycle
-
-
-
-
-
55
1.2
1.7
-
K/W
K/W
K/W
junction to mounting base half cycle
Rth j-a
Thermal resistance
junction to ambient
minimum footprint, FR4 board
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IGT
Gate trigger current
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
2.5
4.0
5.0
11
10
10
10
25
mA
mA
mA
mA
IL
Latching current
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
-
3.2
16
30
40
30
40
30
1.6
1.5
-
mA
mA
mA
mA
mA
V
V
V
mA
-
-
4.0
5.5
4.0
1.2
0.7
0.4
0.1
-
IH
VT
VGT
Holding current
On-state voltage
Gate trigger voltage
VD = 12 V; IGT = 0.1 A
IT = 20 A
-
-
VD = 12 V; IT = 0.1 A
-
0.25
-
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C
ID
Off-state leakage current VD = VDRM(max); Tj = 125 ˚C
0.5
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dVD/dt
tgt
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; gate open circuit
ITM = 20 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
-
-
50
2
-
-
V/µs
µs
July 2001
2
Rev 1.200
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT139B series E
Tmb(max) / C
= 180
IT(RMS) / A
Ptot / W
25
95
20
15
10
5
99 C
101
107
20
1
120
90
15
10
5
60
30
113
119
125
0
0
-50
0
50
Tmb / C
100
150
0
5
10
15
20
IT(RMS) / A
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.4. Maximum permissible rms current IT(RMS)
versus mounting base temperature Tmb.
,
ITSM / A
1000
IT(RMS) / A
50
40
30
20
10
0
100
dIT/dt limit
I
TSM
time
I
T
T2- G+ quadrant
T
Tj initial = 25 C max
10ms
10
10us
100us
1ms
T / s
100ms
0.01
0.1
surge duration / s
1
10
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 99˚C.
ITSM / A
150
VGT(Tj)
VGT(25 C)
1.6
I
TSM
time
I
T
1.4
1.2
1
T
100
50
0
Tj initial = 25 C max
0.8
0.6
0.4
1
10
100
1000
-50
0
50
Tj / C
100
150
Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
July 2001
3
Rev 1.200
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT139B series E
IT / A
IGT(Tj)
IGT(25 C)
50
40
30
20
10
0
Tj = 125 C
Tj = 25 C
3
T2+ G+
T2+ G-
T2- G-
T2- G+
typ
max
2.5
2
Vo = 1.195 V
Rs = 0.018 Ohms
1.5
1
0.5
0
0
0.5
1
1.5
VT / V
2
2.5
3
-50
0
50
Tj / C
100
150
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
Zth j-mb (K/W)
10
3
2.5
2
1
0.1
unidirectional
bidirectional
1.5
1
t
P
p
D
0.01
0.001
t
0.5
0
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
-50
0
50
Tj / C
100
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
versus junction temperature Tj.
dVD/dt (V/us)
1000
IH(Tj)
IH(25C)
3
2.5
2
100
10
1
1.5
1
0.5
0
-50
0
50
100
150
0
50
100
150
Tj / C
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
versus junction temperature Tj.
July 2001
4
Rev 1.200
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT139B series E
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
4.5 max
1.4 max
10.3 max
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.13. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.14. SOT404 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
July 2001
5
Rev 1.200
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT139B series E
DEFINITIONS
DATA SHEET STATUS
DATA SHEET
STATUS2
PRODUCT
DEFINITIONS
STATUS3
Objective data
Development
This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data
Qualification
Production
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in ordere to improve the design and supply the best possible
product
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
2 Please consult the most recently issued datasheet before initiating or completing a design.
3 The product status of the device(s) described in this datasheet may have changed since this datasheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
July 2001
6
Rev 1.200
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