BT139X-800 [NXP]

Triacs; 双向可控硅


型号：	BT139X-800
厂家：	NXP
描述：	Triacs 双向可控硅触发装置可控硅三端双向交流开关局域网
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Philips Semiconductors

Product specification

Triacs

BT139X series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated triacs in a full pack,

plastic envelope, intended for use in

SYMBOL PARAMETER

MAX. MAX. MAX. UNIT

applications

requiring

high

BT139X-

500

600

800

bidirectional transient and blocking

voltage capability and high thermal

BT139X- 500F 600F 800F

BT139X- 500G 600G 800G

cycling

performance.

Typical

V_DRM

Repetitive peak off-state

voltages

500

600

800

applications include motor control,

industrial and domestic lighting,

heating and static switching.

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak on-state

current

140

PINNING - SOT186A

PIN CONFIGURATION

SYMBOL

DESCRIPTION

main terminal 1

case

main terminal 2

gate

2 3

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-500

-600

-800

800

V_DRM

Repetitive peak off-state

voltages

500¹

600¹

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak

on-state current

full sine wave; T_hs≤ 38 ˚C

full sine wave; T_j= 25 ˚C prior to

surge

t = 20 ms

140

150

t = 16.7 ms

I²t

dI_T/dt

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

t = 10 ms

A²s

I_TM= 20 A; I_G= 0.2 A;

dI_G/dt = 0.2 A/µs

T2+ G+

0.5

150

125

A/µs

T2+ G-

T2- G-

T2- G+

I_GM

Peak gate current

Peak gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

V_GM

P_GM

P_G(AV)

T_stg

T_j

over any 20 ms period

-40

˚C

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may

switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Triacs

BT139X series

ISOLATION LIMITING VALUE & CHARACTERISTIC

T_hs= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_isol

C_isol

R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal

2500

three terminals to external

heatsink

waveform;

R.H. ≤ 65% ; clean and dustfree

Capacitance from T2 to external f = 1 MHz

heatsink

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-hs}

R_{th j-a}

Thermal resistance

junction to heatsink

full or half cycle

with heatsink compound

without heatsink compound

in free air

4.0

5.5

K/W

Thermal resistance

junction to ambient

STATIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP.

MAX.

...F

UNIT

BT139X-

V_D= 12 V; I_T= 0.1 A

T2+ G+

...

...G

I_GT

Gate trigger current

Latching current

Holding current

T2+ G-

T2- G-

T2- G+

100

I_L

V_D= 12 V; I_GT= 0.1 A

T2+ G+

T2+ G-

T2- G-

T2- G+

I_H

V_D= 12 V; I_GT= 0.1 A

V_T

On-state voltage

I_T= 20 A

1.2

0.7

0.4

1.6

1.5

V_GT

Gate trigger voltage

V_D= 12 V; I_T= 0.1 A

V_D= 400 V; I_T= 0.1 A;

T_j= 125 ˚C

0.25

I_D

Off-state leakage current V_D= V_DRM(max)

;

0.1

0.5

T_j= 125 ˚C

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Triacs

BT139X series

DYNAMIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

BT139X-

V_DM= 67% V_DRM(max)

...

...F

...G

dV_D/dt

dV_com/dt

t_gt

Critical rate of rise of

off-state voltage

;

100

200

250

V/µs

µs

T_j= 125 ˚C; exponential

waveform; gate open

circuit

Critical rate of change of

commutating voltage

V_DM= 400 V; T_j= 95 ˚C;

I_T(RMS)= 16 A;

dI_com/dt = 7.2 A/ms; gate

open circuit

Gate controlled turn-on

time

I_TM= 20 A; V_D= V_DRM(max);

I_G= 0.1 A; dI_G/dt = 5 A/µs

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Triacs

BT139X series

BT139

IT(RMS) / A

BT139X

38 C

Ths(max) / C

= 180

Ptot / W

120

105

125

-50

Ths / C

100

150

IT(RMS) / A

Fig.1. Maximum on-state dissipation, P_tot, versus rms

on-state current, I_T(RMS), where α = conduction angle.

Fig.4. Maximum permissible rms current I_T(RMS)

versus heatsink temperature T_hs.

BT139

ITSM / A

IT(RMS) / A

1000

100

dI_T/dt limit

TSM

time

T2- G+ quadrant

Tj initial = 25 C max

10ms 100ms

10us

100us

1ms

T / s

0.01

0.1

surge duration / s

Fig.2. Maximum permissible non-repetitive peak

on-state current I_TSM, versus pulse width t_p, for

sinusoidal currents, t_p≤ 20ms.

Fig.5. Maximum permissible repetitive rms on-state

current I_T(RMS), versus surge duration, for sinusoidal

currents, f = 50 Hz; T_hs≤ 38˚C.

VGT(Tj)

VGT(25 C)

ITSM / A

BT139

150

100

BT136

1.6

1.4

1.2

TSM

time

Tj initial = 25 C max

0.8

0.6

0.4

100

1000

-50

Tj / C

100

150

Number of cycles at 50Hz

Fig.3. Maximum permissible non-repetitive peak

on-state current I_TSM, versus number of cycles, for

sinusoidal currents, f = 50 Hz.

Fig.6. Normalised gate trigger voltage

V_GT(T_j)/ V_GT(25˚C), versus junction temperature T_j.

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Triacs

BT139X series

IGT(Tj)

IGT(25 C)

BT139

typ

IT / A

BT139

Tj = 125 C

Tj = 25 C

T2+ G+

T2+ G-

T2- G-

T2- G+

max

2.5

Vo = 1.195 V

Rs = 0.018 Ohms

1.5

0.5

1.5

VT / V

2.5

-50

100

150

Tj / C

Fig.7. Normalised gate trigger current

I_GT(T_j)/ I_GT(25˚C), versus junction temperature T_j.

Fig.10. Typical and maximum on-state characteristic.

IL(Tj)

IL(25 C)

BT139

Zth j-hs (K/W)

TRIAC

with heatsink compound

2.5

without heatsink compound

unidirectional

bidirectional

0.1

1.5

0.01

0.001

0.5

10us

0.1ms

1ms

10ms

tp / s

0.1s

10s

-50

Tj / C

100

150

Fig.8. Normalised latching current I_L(T_j)/ I_L(25˚C),

versus junction temperature T_j.

Fig.11. Transient thermal impedance Z_{th j-hs}, versus

pulse width t_p.

dV/dt (V/us)

1000

IH(Tj)

IH(25C)

TRIAC

off-state dV/dt limit

BT139...G SERIES

2.5

BT139 SERIES

100

BT139...F SERIES

1.5

dIcom/dt =

20 A/ms

9.3 7.2 5.6

0.5

-50

Tj / C

100

150

100

150

Tj / C

Fig.9. Normalised holding current I_H(T_j)/ I_H(25˚C),

versus junction temperature T_j.

Fig.12. Typical commutation dV/dt versus junction

temperature, parameter commutation dI_T/dt. The triac

should commutate when the dV/dt is below the value

on the appropriate curve for pre-commutation dI_T/dt.

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Triacs

BT139X series

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

10.3

max

4.6

max

3.2

3.0

2.9 max

2.8

Recesses (2x)

6.4

2.5

0.8 max. depth

15.8

max

seating

plane

15.8

max.

3 max.

not tinned

2.5

13.5

min.

0.4

1.0 (2x)

0.6

2.5

0.9

0.7

2.54

0.5

5.08

1.3

Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.

Notes

1. Refer to mounting instructions for F-pack envelopes.

2. Epoxy meets UL94 V0 at 1/8".

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Triacs

BT139X series

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1997

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

September 1997

Rev 1.200

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