BT148M-600Z [NXP]

Thyristors logic level; 晶闸管逻辑电平


型号：	BT148M-600Z
厂家：	NXP
描述：	Thyristors logic level 晶闸管逻辑电平
文件：	总6页 (文件大小：53K)
中文：	中文翻译
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Philips Semiconductors

Product specification

Thyristors

logic level

BT148S-600Z

BT148M-600Z

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated, sensitive gate thyristor in

a plastic envelope, suitable for surface

mounting, intended for use in general

purpose switching and phase control

applications. These devices feature a

gate-cathode reverse breakdown voltage

specification. They can be interfaced

directly to microcontrollers, logic integrated

circuits and other low power gate trigger

circuits.

SYMBOL

PARAMETER

MAX. UNIT

BT148S (or BT148M)-

Repetitive peak off-state

voltage

Average on-state current

RMS on-state current

Non-repetitive peak on-state

current

600Z

600

V_DRM

V_RRM

I_T(AV)

2.5

I_T(RMS)

I_TSM

PINNING - SOT428

PIN CONFIGURATION

SYMBOL

NUMBER

Standard Alternative

tab

cathode

anode

gate

anode

cathode

anode

tab

anode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

V_DRM, V_RRMRepetitive peak off-state voltage

600¹

I_T(AV)

I_T(RMS)

I_TSM

Average on-state current

RMS on-state current

Non-repetitive peak on-state

current

half sine wave; T_mb≤ 111 ˚C

2.5

all conduction angles

half sine wave; T_j= 25 ˚C prior to surge

t = 10 ms

t = 8.3 ms

t = 10 ms

6.1

I²t

dI_T/dt

I²t for fusing

A²s

A/µs

Repetitive rate of rise of on-state I_TM= 10 A; I_G= 50 mA;

current after triggering

Peak gate current

Peak gate power

dI_G/dt = 50 mA/µs

I_GM

0.5

150

125²

P_GM

P_G(AV)

T_stg

T_j

˚C

Average gate power

Storage temperature

Operating junction temperature

over any 20 ms period

-40

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.

September 1997

Rev 1.100

Philips Semiconductors

Product specification

Thyristors

logic level

BT148S-600Z

BT148M-600Z

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-mb}

Thermal resistance

junction to mounting base

Thermal resistance

junction to ambient

3.0

K/W

R_{th j-a}

pcb (FR4) mounted; footprint as in Fig.14

K/W

STATIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

I_GT

I_L

Gate trigger current

Latching current

V_D= 12 V; I_T= 0.1 A

V_D= 12 V; I_GT= 0.1 A

I_T= 5 A

0.17

0.10

1.23

200

µA

I_H

Holding current

V_T

V_GR

On-state voltage

1.8

Gate-cathode reverse

breakdown voltage

Gate trigger voltage

I_G= -20 µA

I_G= -150 µA

V_D= 12 V; I_T= 0.1 A

V_D= V_DRM(max); I_T= 0.1 A; T_j= 110 ˚C

1.5

V_GT

0.4

0.2

0.1

I_D, I_R

Off-state leakage current V_D= V_DRM(max); V_R= V_RRM(max); T_j= 125 ˚C

0.5

DYNAMIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

dV_D/dt

Critical rate of rise of

off-state voltage

Gate controlled turn-on

time

Circuit commutated

turn-off time

V_DM= 67% V_DRM(max); T_j= 125 ˚C;

exponential waveform; R_GK= 100 Ω

I_TM= 10 A; V_D= V_DRM(max); I_G= 5 mA;

dI_G/dt = 0.2 A/µs

V_D= 67% V_DRM(max); T_j= 125 ˚C; I_TM= 8 A;

V_R= 10 V; dI_TM/dt = 10 A/µs;

dV_D/dt = 2 V/µs; R_GK= 1 kΩ

V/µs

t_gt

t_q

µs

100

µs

September 1997

Rev 1.100

Philips Semiconductors

Product specification

Thyristors

logic level

BT148S-600Z

BT148M-600Z

ITSM / A

Tmb(max) / C

a = 1.57

BT148

Ptot / W

107

110

conduction form

angle

factor

2.8

2.2

1.9

1.57

degrees

120

180

TSM

1.9

time

Tj initial = 25 C max

2.2

113

116

2.8

119

122

125

0.5

1.5

IF(AV) / A

2.5

1000

100

Number of half cycles at 50Hz

Fig.1. Maximum on-state dissipation, P_tot, versus

average on-state current, I_T(AV), where

Fig.4. Maximum permissible non-repetitive peak

on-state current I_TSM, versus number of cycles, for

sinusoidal currents, f = 50 Hz.

a = form factor = I_T(RMS)/ I_T(AV)

BT148

BT150

IT(RMS) / A

ITSM / A

1000

100

dI_T/dt limit

TSM

time

Tj initial = 25 C max

10ms

10us

100us

1ms

0.01

0.1

surge duration / s

T / s

Fig.2. Maximum permissible non-repetitive peak

on-state current I_TSM, versus pulse width t_p, for

sinusoidal currents, t_p≤ 10ms.

Fig.5. Maximum permissible repetitive rms on-state

current I_T(RMS), versus surge duration, for sinusoidal

currents, f = 50 Hz; T_mb≤ 111˚C.

VGT(Tj)

VGT(25 C)

BT148Z

IT(RMS) / A

BT151

1.6

1.4

1.2

111 C

0.8

0.6

0.4

-50

Tmb / C

100

-50

100

150

Tj / C

Fig.3. Maximum permissible rms current I_T(RMS)

versus mounting base temperature T_mb.

Fig.6. Normalised gate trigger voltage

V_GT(T_j)/ V_GT(25˚C), versus junction temperature T_j.

September 1997

Rev 1.100

Philips Semiconductors

Product specification

Thyristors

logic level

BT148S-600Z

BT148M-600Z

IGT(Tj)

IGT(25 C)

BT148

IT / A

BT148

Tj = 125 C

Tj = 25 C

2.5

Vo = 1.26 V

Rs = 0.099 ohms

typ

max

1.5

0.5

1.5

2.5

-50

Tj / C

100

150

VT / V

Fig.7. Normalised gate trigger current

I_GT(T_j)/ I_GT(25˚C), versus junction temperature T_j.

Fig.10. Typical and maximum on-state characteristic.

IL(Tj)

IL(25 C)

BT148

Zth j-mb (K/W)

BT145

2.5

1.5

0.1

0.01

0.5

10us

0.1ms

1ms

10ms

tp / s

0.1s

10s

-50

Tj / C

100

150

Fig.8. Normalised latching current I_L(T_j)/ I_L(25˚C),

versus junction temperature T_j.

Fig.11. Transient thermal impedance Z_{th j-mb}, versus

pulse width t_p.

IH(Tj)

IH(25 C)

dVD/dt (V/us)

1000

BT145

2.5

RGK = 100 ohms

100

1.5

0.5

-50

Tj / C

100

150

100

150

Tj / C

Fig.9. Normalised holding current I_H(T_j)/ I_H(25˚C),

versus junction temperature T_j.

Fig.12. Typical, critical rate of rise of off-state voltage,

dV_D/dt versus junction temperature T_j.

September 1997

Rev 1.100

Philips Semiconductors

Product specification

Thyristors

logic level

BT148S-600Z

BT148M-600Z

MECHANICAL DATA

Dimensions in mm

Net Mass: 1.1 g

seating plane

2.38 max

0.93 max

1.1

5.4

6.73 max

tab

4 min

4.6

6.22 max

0.5 min

10.4 max

0.5

0.3

0.5

0.8 max

(x2)

2.285 (x2)

Fig.13. SOT428 : centre pin connected to tab.

MOUNTING INSTRUCTIONS

Dimensions in mm

7.0

2.15

2.5

1.5

4.57

Fig.14. SOT428 : minimum pad sizes for surface mounting.

Notes

1. Plastic meets UL94 V0 at 1/8".

September 1997

Rev 1.100

Philips Semiconductors

Product specification

Thyristors

logic level

BT148S-600Z

BT148M-600Z

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1997

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

September 1997

Rev 1.100

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