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BT148W-400RT/R [NXP]

Silicon Controlled Rectifier, 1 A, 400 V, SCR, PLASTIC PACKAGE-4;
BT148W-400RT/R
型号： BT148W-400RT/R
厂家： NXP    NXP
描述：

Silicon Controlled Rectifier, 1 A, 400 V, SCR, PLASTIC PACKAGE-4

栅 光电二极管 栅极
文件： 总9页 (文件大小：107K)
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ꢀDISCRETE SEMICONDUCTORSꢀ  
DATA SHEET  
BT148W series  
Thyristors  
logic levelꢀ  
Product specification  
October 1997  
ꢁꢂꢃ Semiconductors  
Product specification  
Thyristors  
logic level  
BT148W series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated, sensitive gate  
plastic envelope  
SYMBOL PARAMETER  
MAX. MAX. MAX. UNIT  
thyristors in  
a
suitable for surface mounting,  
intended for use in general purpose  
switching and phase control  
applications. These devices are  
intended to be interfaced directly to  
microcontrollers, logic integrated  
circuits and other low power gate  
trigger circuits.  
BT148W- 400R 500R 600R  
500  
VDRM  
VRRM  
IT(AV)  
IT(RMS)  
ITSM  
,
Repetitive peak off-state  
voltages  
400  
600  
V
Average on-state current  
RMS on-state current  
Non-repetitive peak on-state  
current  
0.6  
1
10  
0.6  
1
10  
0.6  
1
10  
A
A
A
PINNING - SOT223  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
cathode  
4
a
k
2
anode  
gate  
3
g
2
3
1
tab anode  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
-400R -500R -600R  
VDRM, VRRM Repetitive peak off-state  
voltages  
-
4001 5001 6001  
V
IT(AV)  
IT(RMS)  
ITSM  
Average on-state current half sine wave; Tsp ≤ 112 ˚C  
-
-
0.6  
1
A
A
RMS on-state current  
Non-repetitive peak  
on-state current  
all conduction angles  
half sine wave; Tj = 25 ˚C prior to  
surge  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
ITM = 4 A; IG = 200 mA;  
dIG/dt = 200 mA/μs  
-
-
-
-
10  
11  
0.5  
50  
A
A
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
A2s  
A/μs  
IGM  
Peak gate current  
Peak gate voltage  
Peak reverse gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
-
-
-
-
1
5
5
1.2  
0.12  
150  
1252  
A
V
V
W
W
˚C  
˚C  
VGM  
VRGM  
PGM  
PG(AV)  
Tstg  
over any 20 ms period  
-40  
-
Tj  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may  
switch to the on-state. The rate of rise of current should not exceed 15 A/μs.  
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.  
October 1997  
1
Rev 1.300  
ꢁꢂꢃ Semiconductors  
Product specification  
Thyristors  
logic level  
BT148W series  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-sp  
Rth j-a  
Thermal resistance  
junction to solder point  
Thermal resistance  
junction to ambient  
-
-
15  
K/W  
pcb mounted, minimum footprint  
pcb mounted, pad area as in fig:14  
-
-
156  
70  
-
-
K/W  
K/W  
STATIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
IGT  
IL  
IH  
VT  
Gate trigger current  
Latching current  
Holding current  
VD = 12 V; IT = 0.1 A  
VD = 12 V; IGT = 0.1 A  
VD = 12 V; IGT = 0.1 A  
IT = 2 A  
-
-
-
-
50  
0.17  
0.10  
1.3  
0.4  
0.2  
200  
10  
6
1.5  
1.5  
-
μA  
mA  
mA  
V
V
V
mA  
On-state voltage  
Gate trigger voltage  
VGT  
VD = 12 V; IT = 0.1 A  
VR = VRRM(max); IT = 0.1 A; Tj = 110 ˚C  
Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C  
-
0.1  
-
ID, IR  
0.1  
0.5  
DYNAMIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
dVD/dt  
Critical rate of rise of  
off-state voltage  
Gate controlled turn-on  
time  
Circuit commutated  
turn-off time  
VDM = 67% VDRM(max); Tj = 125 ˚C;  
exponential waveform; RGK = 100 Ω  
ITM = 4 A; VD = VDRM(max); IG = 5 mA;  
dIG/dt = 0.2 A/μs  
VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 2 A;  
VR = 35 V; dITM/dt = 30 A/μs;  
dVD/dt = 2 V/μs; RGK = 1 kΩ  
-
-
-
50  
2
-
-
-
V/μs  
μs  
tgt  
tq  
100  
μs  
October 1997  
2
Rev 1.300  
ꢁꢂꢃ Semiconductors  
Product specification  
Thyristors  
logic level  
BT148W series  
ITSM / A  
Ptot / W  
1
Tsp(max) / C  
a = 1.57  
12  
10  
8
110  
conduction form  
factor  
I
angle  
degrees  
TSM  
I
T
a
4
30  
0.8  
0.6  
0.4  
0.2  
0
113  
116  
60  
2.8  
2.2  
1.9  
1.57  
time  
Tj initial = 25 C max  
T
1.9  
90  
2.2  
120  
180  
2.8  
6
4
119  
122  
125  
4
2
0
0
0.1  
0.2  
0.3 0.4  
IF(AV) / A  
0.5  
0.6  
0.7  
1
10 100  
Number of cycles at 50Hz  
1000  
Fig.1. Maximum on-state dissipation, Ptot, versus  
average on-state current, IT(AV), where  
a = form factor = IT(RMS)/ IT(AV)  
Fig.4. Maximum permissible non-repetitive peak  
on-state current ITSM, versus number of cycles, for  
sinusoidal currents, f = 50 Hz.  
.
IT(RMS) / A  
ITSM / A  
2
1.5  
1
1000  
100  
10  
I
TSM  
time  
I
T
0.5  
0
T
Tj initial = 25 C max  
1
10us  
10ms  
100us  
1ms  
0.01  
0.1  
1
10  
T / s  
surge duration / s  
Fig.2. Maximum permissible non-repetitive peak  
on-state current ITSM, versus pulse width tp, for  
sinusoidal currents, tp ≤ 10ms.  
Fig.5. Maximum permissible repetitive rms on-state  
current IT(RMS), versus surge duration, for sinusoidal  
currents, f = 50 Hz; Tsp ≤ 112˚C.  
VGT(Tj)  
VGT(25 C)  
IT(RMS) / A  
1.2  
1
1.6  
1.4  
1.2  
1
112 C  
0.8  
0.6  
0.4  
0.2  
0
0.8  
0.6  
0.4  
-50  
0
50  
Tsp / C  
100  
150  
-50  
0
50  
Tj / C  
100  
150  
Fig.3. Maximum permissible rms current IT(RMS)  
versus solder point temperature Tsp.  
,
Fig.6. Normalised gate trigger voltage  
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.  
October 1997  
3
Rev 1.300  
ꢁꢂꢃ Semiconductors  
Product specification  
Thyristors  
logic level  
BT148W series  
IGT(Tj)  
IGT(25 C)  
3
IT / A  
5
4
3
2
1
0
Tj = 125 C  
Tj = 25 C  
2.5  
2
Vo = 1.107 V  
Rs = 0.14 Ohms  
1.5  
1
max  
typ  
0.5  
0
0
0.5  
1
1.5  
2
2.5  
-50  
0
50  
Tj / C  
100  
150  
VT / V  
Fig.7. Normalised gate trigger current  
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.  
Fig.10. Typical and maximum on-state characteristic.  
IL(Tj)  
IL(25 C)  
Zth j-sp (K/W)  
100  
10  
3
2.5  
2
1
1.5  
1
t
P
D
p
0.1  
0.01  
t
0.5  
0
10us  
0.1ms  
1ms  
10ms  
tp / s  
0.1s  
1s  
10s  
-50  
0
50  
Tj / C  
100  
150  
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),  
versus junction temperature Tj.  
Fig.11. Transient thermal impedance Zth j-sp, versus  
pulse width tp.  
IH(Tj)  
IH(25 C)  
dVD/dt (V/us)  
1000  
3
2.5  
2
RGK = 100 ohms  
100  
1.5  
1
10  
0.5  
0
1
-50  
0
50  
Tj / C  
100  
150  
0
50  
100  
150  
Tj / C  
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),  
versus junction temperature Tj.  
Fig.12. Typical, critical rate of rise of off-state voltage,  
dVD/dt versus junction temperature Tj.  
October 1997  
4
Rev 1.300  
ꢁꢂꢃ Semiconductors  
Product specification  
Thyristors  
logic level  
BT148W series  
MOUNTING INSTRUCTIONS  
Dimensions in mm.  
3.8  
min  
1.5  
min  
2.3  
6.3  
1.5  
min  
(3x)  
1.5  
min  
4.6  
Fig.13. soldering pattern for surface mounting SOT223.  
PRINTED CIRCUIT BOARD  
Dimensions in mm.  
36  
18  
60  
4.5  
4.6  
9
10  
7
15  
50  
Fig.14. PCB for thermal resistance and power rating for SOT223.  
PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 μm thick).  
October 1997  
5
Rev 1.300  
ꢁꢂꢃ Semiconductors  
Product specification  
Thyristors  
logic level  
BT148W series  
MECHANICAL DATA  
Dimensions in mm  
Net Mass: 0.11 g  
6.7  
6.3  
B
3.1  
2.9  
0.32  
0.24  
0.2  
M
A
A
4
0.10  
0.02  
7.3  
6.7  
3.7  
3.3  
16  
max  
13  
2
3
1
10  
max  
1.05  
0.85  
0.80  
0.60  
2.3  
1.8  
max  
M
0.1  
(4x)  
B
4.6  
Fig.15. SOT223 surface mounting package.  
Notes  
1. For further information, refer to Philips publication SC18 " SMD Footprint Design and Soldering Guidelines".  
Order code: 9397 750 00505.  
2. Epoxy meets UL94 V0 at 1/8".  
October 1997  
6
Rev 1.300  
NXP Semiconductors  
Legal information  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DEFINITIONS  
Right to make changes ⎯ NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
Product specification ⎯ The information and data  
provided in a Product data sheet shall define the  
specification of the product as agreed between NXP  
Semiconductors and its customer, unless NXP  
Semiconductors and customer have explicitly agreed  
otherwise in writing. In no event however, shall an  
agreement be valid in which the NXP Semiconductors  
product is deemed to offer functions and qualities beyond  
those described in the Product data sheet.  
Suitability for use ⎯ NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in life support, life-critical or safety-critical systems or  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
DISCLAIMERS  
Limited warranty and liability ⎯ Information in this  
document is believed to be accurate and reliable.  
However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to  
the accuracy or completeness of such information and  
shall have no liability for the consequences of use of such  
information.  
Applications ⎯ Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
In no event shall NXP Semiconductors be liable for any  
indirect, incidental, punitive, special or consequential  
damages (including - without limitation - lost profits, lost  
savings, business interruption, costs related to the  
removal or replacement of any products or rework  
charges) whether or not such damages are based on tort  
(including negligence), warranty, breach of contract or any  
other legal theory.  
Customers are responsible for the design and operation of  
their applications and products using NXP  
Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or  
customer product design. It is customer’s sole  
responsibility to determine whether the NXP  
Notwithstanding any damages that customer might incur  
for any reason whatsoever, NXP Semiconductors’  
aggregate and cumulative liability towards customer for  
the products described herein shall be limited in  
accordance with the Terms and conditions of commercial  
sale of NXP Semiconductors.  
Semiconductors product is suitable and fit for the  
customer’s applications and products planned, as well as  
for the planned application and use of customer’s third  
party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks  
associated with their applications and products.  
NXP Semiconductors  
Legal information  
NXP Semiconductors does not accept any liability related  
to any default, damage, costs or problem which is based  
on any weakness or default in the customer’s applications  
or products, or the application or use by customer’s third  
party customer(s). Customer is responsible for doing all  
necessary testing for the customer’s applications and  
products using NXP Semiconductors products in order to  
avoid a default of the applications and the products or of  
the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this  
respect.  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Export control ⎯ This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Quick reference data ⎯ The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Limiting values ⎯ Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) will cause permanent damage to  
the device. Limiting values are stress ratings only and  
(proper) operation of the device at these or any other  
conditions above those given in the Recommended  
operating conditions section (if present) or the  
Characteristics sections of this document is not warranted.  
Constant or repeated exposure to limiting values will  
permanently and irreversibly affect the quality and  
reliability of the device.  
Non-automotive qualified products ⎯ Unless this data  
sheet expressly states that this specific NXP  
Semiconductors product is automotive qualified, the  
product is not suitable for automotive use. It is neither  
qualified nor tested in accordance with automotive testing  
or application requirements. NXP Semiconductors accepts  
no liability for inclusion and/or use of non-automotive  
qualified products in automotive equipment or  
applications.  
In the event that customer uses the product for design-in  
and use in automotive applications to automotive  
specifications and standards, customer (a) shall use the  
product without NXP Semiconductors’ warranty of the  
product for such automotive applications, use and  
specifications, and (b) whenever customer uses the  
product for automotive applications beyond NXP  
Semiconductors’ specifications such use shall be solely at  
customer’s own risk, and (c) customer fully indemnifies  
NXP Semiconductors for any liability, damages or failed  
product claims resulting from customer design and use of  
the product for automotive applications beyond NXP  
Semiconductors’ standard warranty and NXP  
Terms and conditions of commercial sale ⎯ NXP  
Semiconductors products are sold subject to the general  
terms and conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an  
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conditions of the respective agreement shall apply. NXP  
Semiconductors hereby expressly objects to applying the  
customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
No offer to sell or license ⎯ Nothing in this document  
may be interpreted or construed as an offer to sell products  
Semiconductors’ product specifications.  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions  
and disclaimers. No changes were made to the content, except for the legal definitions and disclaimers.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2011  
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other industrial or intellectual property rights.  
Printed in The Netherlands  

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