BT149BAMO [NXP]

Silicon Controlled Rectifier, 0.8 A, 200 V, SCR, TO-92, PLASTIC, SPT, SC-43, TO-92 VARIANT, 3 PIN;


型号：	BT149BAMO
厂家：	NXP
描述：	Silicon Controlled Rectifier, 0.8 A, 200 V, SCR, TO-92, PLASTIC, SPT, SC-43, TO-92 VARIANT, 3 PIN
文件：	总6页 (文件大小：46K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Philips Semiconductors

Product specification

Thyristors

logic level

BT149 series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

SYMBOL PARAMETER

BT149

Glass passivated, sensitive gate

thyristors in a plastic envelope,

intended for use in general purpose

MAX. MAX. MAX. MAX. UNIT

switching

and

phase

control

V_DRM

V_RRM

I_T(AV)

Repetitive peak

off-state voltages

Average on-state

current

200

400

500

600

applications. These devices are

intended to be interfaced directly to

microcontrollers, logic integrated

circuits and other low power gate

trigger circuits.

0.5

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak

on-state current

0.8

PINNING - TO92 variant

PIN CONFIGURATION

SYMBOL

DESCRIPTION

cathode

gate

anode

2 1

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DRM, V_RRMRepetitive peak off-state

voltages

200¹

400¹

500¹

600¹

I_T(AV)

Average on-state current half sine wave;

_lead≤ 83 ˚C

RMS on-state current

Non-repetitive peak

on-state current

0.5

I_T(RMS)

I_TSM

all conduction angles

t = 10 ms

0.8

t = 8.3 ms

half sine wave;

T_j= 25 ˚C prior to surge

t = 10 ms

I²t

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

Peak gate current

Peak gate voltage

Peak reverse gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

0.32

A²s

dI_T/dt

I_TM= 2 A; I_G= 10 mA;

dI_G/dt = 100 mA/µs

A/µs

I_GM

˚C

V_GM

V_RGM

P_GM

P_G(AV)

T_stg

over any 20 ms period

0.1

150

125

-40

T_j

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Thyristors

logic level

BT149 series

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-lead}

Thermal resistance

junction to lead

K/W

R_{th j-a}

Thermal resistance

junction to ambient

pcb mounted; lead length = 4mm

150

K/W

STATIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

I_GT

I_L

Gate trigger current

Latching current

Holding current

V_D= 12 V; I_T= 10 mA; gate open circuit

V_D= 12 V; I_GT= 0.5 mA; R_GK= 1 kΩ

I_T= 1 A

V_D= 12 V; I_T= 10 mA; gate open circuit

V_D= V_DRM(max); I_T= 10 mA; T_j= 125 ˚C;

gate open circuit

200

µA

I_H

V_T

V_GT

On-state voltage

Gate trigger voltage

1.2

0.5

0.3

1.35

0.8

0.2

I_D, I_R

Off-state leakage current V_D= V_DRM(max); V_R= V_RRM(max); T_j= 125 ˚C;

_GK= 1 kΩ

0.05

0.1

DYNAMIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

dV_D/dt

Critical rate of rise of

off-state voltage

Gate controlled turn-on

time

Circuit commutated

turn-off time

V_DM= 67% V_DRM(max); T_j= 125 ˚C;

exponential waveform; R_GK= 1 kΩ

I_TM= 2 A; V_D= V_DRM(max); I_G= 10 mA;

dI_G/dt = 0.1 A/µs

V_D= 67% V_DRM(max); T_j= 125 ˚C;

I_TM= 1.6 A; V_R= 35 V; dI_TM/dt = 30 A/µs;

dV_D/dt = 2 V/µs; R_GK= 1 kΩ

V/µs

µs

t_gt

t_q

100

µs

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Thyristors

logic level

BT149 series

Tc(max) / C

Ptot / W

0.8

BT169

2.2

ITSM / A

BT169

conduction form

a = 1.57

angle

factor

TSM

time

0.7

0.6

0.5

0.4

0.3

0.2

0.1

degrees

1.9

120

180

2.8

2.2

1.9

1.57

Tj initial = 25 C max

2.8

101

107

113

119

125

0.1

0.2

0.3

0.4

0.5

0.6

0.7

100

1000

IF(AV) / A

Number of half cycles at 50Hz

Fig.1. Maximum on-state dissipation, P_tot, versus

average on-state current, I_T(AV), where

Fig.4. Maximum permissible non-repetitive peak

on-state current I_TSM, versus number of cycles, for

sinusoidal currents, f = 50 Hz.

a = form factor = I_T(RMS)/ I_T(AV)

BT169

ITSM / A

BT169

IT(RMS) / A

1000

100

1.5

TSM

time

0.5

Tj initial = 25 C max

10ms

10us

100us

1ms

0.01

0.1

T / s

surge duration / s

Fig.2. Maximum permissible non-repetitive peak

on-state current I_TSM, versus pulse width t_p, for

sinusoidal currents, t_p≤ 10ms.

Fig.5. Maximum permissible repetitive rms on-state

current I_T(RMS), versus surge duration, for sinusoidal

currents, f = 50 Hz; T_lead≤ 83˚C.

IT(RMS) / A

BT169

VGT(Tj)

BT151

VGT(25 C)

1.6

1.4

1.2

83 C

0.8

0.6

0.4

0.2

0.8

0.6

0.4

-50

Tlead / C

100

150

-50

100

150

Tj / C

Fig.3. Maximum permissible rms current I_T(RMS)

versus lead temperature, T_lead

Fig.6. Normalised gate trigger voltage

V_GT(T_j)/ V_GT(25˚C), versus junction temperature T_j.

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Thyristors

logic level

BT149 series

IGT(Tj)

IGT(25 C)

BT169

IT / A

BT169

Tj = 125 C

Tj = 25 C

2.5

Vo = 1.067 V

Rs = 0.187 ohms

typ

max

1.5

0.5

1.5

2.5

-50

100

150

Tj / C

VT / V

Fig.7. Normalised gate trigger current

I_GT(T_j)/ I_GT(25˚C), versus junction temperature T_j.

Fig.10. Typical and maximum on-state characteristic.

IL(Tj)

IL(25 C)

BT169

Zth j-lead (K/W)

100

BT169

2.5

1.5

0.1

0.01

0.5

10us

0.1ms

1ms

10ms

tp / s

0.1s

10s

-50

Tj / C

100

150

Fig.8. Normalised latching current I_L(T_j)/ I_L(25˚C),

Fig.11. Transient thermal impedance Z_{th j-lead}, versus

pulse width t_p.

versus junction temperature T_j, R_GK= 1 kΩ.

dVD/dt (V/us)

1000

IH(Tj)

IH(25 C)

BT169

2.5

100

RGK = 1 kohms

1.5

0.5

100

150

-50

100

150

Tj / C

Fig.9. Normalised holding current I_H(T_j)/ I_H(25˚C),

Fig.12. Typical, critical rate of rise of off-state voltage,

dV_D/dt versus junction temperature T_j.

versus junction temperature T_j, R_GK= 1 kΩ.

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Thyristors

logic level

BT149 series

MECHANICAL DATA

Dimensions in mm

Net Mass: 0.2 g

2.54

0.66

0.56

1.6

4.2 max

4.8 max

5.2 max

2.5 max

12.7 min

0.48

0.40

min

3 2 1

Fig.13. TO92; plastic envelope.

Notes

1. Epoxy meets UL94 V0 at 1/8".

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Thyristors

logic level

BT149 series

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1997

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

September 1997

Rev 1.200

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