BT151F-500R [NXP]

Silicon Controlled Rectifier, 9 A, 500 V, SCR, PLASTIC, SOT-186, 3 PIN;
BT151F-500R
型号: BT151F-500R
厂家: NXP    NXP
描述:

Silicon Controlled Rectifier, 9 A, 500 V, SCR, PLASTIC, SOT-186, 3 PIN

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Philips Semiconductors  
Product specification  
Thyristors  
BT151F series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Passivated thyristor in a full pack, plastic  
envelope, intended for use in applications  
requiring high bidirectional blocking voltage  
capability and high thermal cycling  
performance. Typical applications include  
motor control, industrial and domestic  
lighting, heating and static switching.  
SYMBOL  
PARAMETER  
MAX. UNIT  
BT151F-  
500R  
500  
VDRM, VRRM  
IT(AV)  
IT(RMS)  
ITSM  
Repetitive peak off-state  
voltages  
Average on-state current  
RMS on-state current  
Non-repetitive peak on-state  
current  
V
5.7  
9
100  
A
A
A
PINNING - SOT186  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
case  
cathode  
anode  
gate  
a
k
2
3
g
1
2 3  
case isolated  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDRM, VRRM Repetitive peak off-state  
voltages  
-
5001  
V
IT(AV)  
IT(RMS)  
ITSM  
Average on-state current half sine wave; Ths 87 ˚C  
-
-
5.7  
9
A
A
RMS on-state current  
Non-repetitive peak  
on-state current  
all conduction angles  
half sine wave; Tj = 125 ˚C prior  
to surge; with reapplied VDRM(max)  
t = 10 ms  
-
-
-
-
100  
110  
50  
A
A
t = 8.3 ms  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
t = 10 ms  
ITM = 20 A; IG = 50 mA;  
dIG/dt = 50 mA/µs  
A2s  
A/µs  
50  
IGM  
Peak gate current  
Peak reverse gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
2
5
5
0.5  
150  
125  
A
V
W
W
˚C  
˚C  
VRGM  
PGM  
PG(AV)  
Tstg  
-
-
-
over any 20 ms period  
-40  
-
Tj  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may  
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
January 2002  
1
Rev 1.000  
Philips Semiconductors  
Product specification  
Thyristors  
BT151F series  
ISOLATION LIMITING VALUE & CHARACTERISTIC  
Ths = 25 ˚C unless otherwise specified  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Visol  
Cisol  
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal  
-
-
1500  
V
three terminals to external  
heatsink  
waveform;  
R.H. 65% ; clean and dustfree  
Capacitance from T2 to external f = 1 MHz  
heatsink  
-
12  
-
pF  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-hs  
Thermal resistance  
junction to heatsink  
Thermal resistance  
junction to ambient  
with heatsink compound  
without heatsink compound  
in free air  
-
-
-
-
-
55  
4.5  
6.5  
-
K/W  
K/W  
K/W  
Rth j-a  
STATIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
IGT  
IL  
Gate trigger current  
Latching current  
Holding current  
VD = 12 V; IT = 0.1 A  
VD = 12 V; IGT = 0.1 A  
VD = 12 V; IGT = 0.1 A  
IT = 23 A  
-
2
15  
40  
mA  
mA  
mA  
V
-
10  
7
IH  
-
-
20  
VT  
VGT  
On-state voltage  
Gate trigger voltage  
1.4  
0.6  
0.4  
0.1  
1.75  
1.5  
-
VD = 12 V; IT = 0.1 A  
VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C  
-
0.25  
-
V
V
mA  
ID, IR  
Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C  
0.5  
DYNAMIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
dVD/dt  
Critical rate of rise of  
off-state voltage  
VDM = 67% VDRM(max); Tj = 125 ˚C;  
exponential waveform  
Gate open circuit  
GK = 100 Ω  
50  
200  
-
130  
1000  
2
-
-
-
V/µs  
V/µs  
µs  
R
tgt  
tq  
Gate controlled turn-on  
time  
Circuit commutated  
turn-off time  
ITM = 40 A; VD = VDRM(max); IG = 0.1 A;  
dIG/dt = 5 A/µs  
VD = 67% VDRM(max); Tj = 125 ˚C;  
ITM = 20 A; VR = 25 V; dITM/dt = 30 A/µs;  
dVD/dt = 50 V/µs; RGK = 100 Ω  
-
70  
-
µs  
January 2002  
2
Rev 1.000  
Philips Semiconductors  
Product specification  
Thyristors  
BT151F series  
ITSM / A  
Ptot / W  
10  
Ths(max) / C  
a = 1.57  
120  
100  
80  
60  
40  
20  
0
80  
89  
conduction form  
I
TSM  
time  
angle  
factor  
a
4
2.8  
2.2  
1.9  
1.57  
I
T
degrees  
30  
60  
90  
120  
180  
8
6
4
2
0
T
1.9  
Tj initial = 25 C max  
2.2  
2.8  
98  
4
107  
116  
125  
0
1
2
3
4
5
6
1
10  
100  
1000  
IF(AV) / A  
Number of half cycles at 50Hz  
Fig.1. Maximum on-state dissipation, Ptot, versus  
average on-state current, IT(AV), where  
Fig.4. Maximum permissible non-repetitive peak  
on-state current ITSM, versus number of cycles, for  
sinusoidal currents, f = 50 Hz.  
a = form factor = IT(RMS)/ IT(AV)  
.
ITSM / A  
IT(RMS) / A  
25  
1000  
100  
10  
20  
15  
10  
5
dIT/dt limit  
I
TSM  
time  
I
T
T
Tj initial = 25 C max  
0
10ms  
10us  
100us  
1ms  
0.01  
0.1  
surge duration / s  
1
10  
T / s  
Fig.2. Maximum permissible non-repetitive peak  
on-state current ITSM, versus pulse width tp, for  
sinusoidal currents, tp 10ms.  
Fig.5. Maximum permissible repetitive rms on-state  
current IT(RMS), versus surge duration, for sinusoidal  
currents, f = 50 Hz; Ths 87˚C.  
IT(RMS) / A  
10  
VGT(Tj)  
VGT(25 C)  
1.6  
87 C  
8
1.4  
1.2  
1
6
4
2
0
0.8  
0.6  
0.4  
-50  
0
50  
Ths / C  
100  
150  
-50  
0
50  
Tj / C  
100  
150  
Fig.3. Maximum permissible rms current IT(RMS)  
versus heatsink temperature Ths.  
,
Fig.6. Normalised gate trigger voltage  
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.  
January 2002  
3
Rev 1.000  
Philips Semiconductors  
Product specification  
Thyristors  
BT151F series  
IT / A  
IGT(Tj)  
IGT(25 C)  
30  
25  
20  
15  
10  
5
Tj = 125 C  
Tj = 25 C  
3
2.5  
2
Vo = 1.06 V  
Rs = 0.0304 ohms  
typ  
max  
1.5  
1
0.5  
0
0
-50  
0
50  
Tj / C  
100  
150  
0
0.5  
1
1.5  
2
VT / V  
Fig.7. Normalised gate trigger current  
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.  
Fig.10. Typical and maximum on-state characteristic.  
IL(Tj)  
IL(25 C)  
Zth j-hs (K/W)  
10  
3
2.5  
2
without heatsink compound  
1
0.1  
with heatsink compound  
1.5  
1
t
P
p
D
0.01  
0.001  
t
0.5  
0
10us  
0.1ms  
1ms  
10ms  
tp / s  
0.1s  
1s  
10s  
-50  
0
50  
Tj / C  
100  
150  
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),  
Fig.11. Transient thermal impedance Zth j-hs, versus  
pulse width tp.  
versus junction temperature Tj.  
IH(Tj)  
IH(25 C)  
dVD/dt (V/us)  
10000  
3
2.5  
2
1000  
RGK = 100 Ohms  
1.5  
1
100  
gate open circuit  
0.5  
0
10  
-50  
0
50  
Tj / C  
100  
150  
0
50  
100  
150  
Tj / C  
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),  
Fig.12. Typical, critical rate of rise of off-state voltage,  
dVD/dt versus junction temperature Tj.  
versus junction temperature Tj.  
January 2002  
4
Rev 1.000  
Philips Semiconductors  
Product specification  
Thyristors  
BT151F series  
MECHANICAL DATA  
Dimensions in mm  
Net Mass: 2 g  
10.2  
max  
5.7  
max  
3.2  
3.0  
4.4  
max  
0.9  
0.5  
2.9 max  
4.4  
4.0  
7.9  
7.5  
17  
max  
seating  
plane  
3.5 max  
not tinned  
4.4  
13.5  
min  
1
2
3
0.9  
0.7  
M
0.4  
0.55 max  
1.3  
2.54  
5.08  
top view  
Fig.13. SOT186; The seating plane is electrically isolated from all terminals.  
Notes  
1. Refer to mounting instructions for F-pack envelopes.  
2. Epoxy meets UL94 V0 at 1/8".  
January 2002  
5
Rev 1.000  
Philips Semiconductors  
Product specification  
Thyristors  
BT151F series  
DEFINITIONS  
DATA SHEET STATUS  
DATA SHEET  
STATUS2  
PRODUCT  
DEFINITIONS  
STATUS3  
Objective data  
Development  
This data sheet contains data from the objective specification for  
product development. Philips Semiconductors reserves the right to  
change the specification in any manner without notice  
Preliminary data  
Qualification  
Production  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product  
Product data  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in  
order to improve the design, manufacturing and supply. Changes will  
be communicated according to the Customer Product/Process  
Change Notification (CPCN) procedure SNW-SQ-650A  
Limiting values  
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
operation of the device at these or at any other conditions above those given in the Characteristics sections of  
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
Philips Electronics N.V. 2002  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
copyright owner.  
The information presented in this document does not form part of any quotation or contract, it is believed to be  
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
industrial or intellectual property rights.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices or systems where malfunction of these  
products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
from such improper use or sale.  
2 Please consult the most recently issued datasheet before initiating or completing a design.  
3 The product status of the device(s) described in this datasheet may have changed since this datasheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
January 2002  
6
Rev 1.000  

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