BT151F-500R [NXP]
Silicon Controlled Rectifier, 9 A, 500 V, SCR, PLASTIC, SOT-186, 3 PIN;
| 型号： | BT151F-500R |
| 厂家： | 
NXP |
| 描述： | Silicon Controlled Rectifier, 9 A, 500 V, SCR, PLASTIC, SOT-186, 3 PIN 栅 栅极 |
| 文件： | 总6页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Thyristors
BT151F series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated thyristor in a full pack, plastic
envelope, intended for use in applications
requiring high bidirectional blocking voltage
capability and high thermal cycling
performance. Typical applications include
motor control, industrial and domestic
lighting, heating and static switching.
SYMBOL
PARAMETER
MAX. UNIT
BT151F-
500R
500
VDRM, VRRM
IT(AV)
IT(RMS)
ITSM
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
V
5.7
9
100
A
A
A
PINNING - SOT186
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
case
cathode
anode
gate
a
k
2
3
g
1
2 3
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDRM, VRRM Repetitive peak off-state
voltages
-
5001
V
IT(AV)
IT(RMS)
ITSM
Average on-state current half sine wave; Ths ≤ 87 ˚C
-
-
5.7
9
A
A
RMS on-state current
Non-repetitive peak
on-state current
all conduction angles
half sine wave; Tj = 125 ˚C prior
to surge; with reapplied VDRM(max)
t = 10 ms
-
-
-
-
100
110
50
A
A
t = 8.3 ms
I2t
dIT/dt
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
t = 10 ms
ITM = 20 A; IG = 50 mA;
dIG/dt = 50 mA/µs
A2s
A/µs
50
IGM
Peak gate current
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
2
5
5
0.5
150
125
A
V
W
W
˚C
˚C
VRGM
PGM
PG(AV)
Tstg
-
-
-
over any 20 ms period
-40
-
Tj
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
January 2002
1
Rev 1.000
Philips Semiconductors
Product specification
Thyristors
BT151F series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Visol
Cisol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
-
-
1500
V
three terminals to external
heatsink
waveform;
R.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz
heatsink
-
12
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-hs
Thermal resistance
junction to heatsink
Thermal resistance
junction to ambient
with heatsink compound
without heatsink compound
in free air
-
-
-
-
-
55
4.5
6.5
-
K/W
K/W
K/W
Rth j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IGT
IL
Gate trigger current
Latching current
Holding current
VD = 12 V; IT = 0.1 A
VD = 12 V; IGT = 0.1 A
VD = 12 V; IGT = 0.1 A
IT = 23 A
-
2
15
40
mA
mA
mA
V
-
10
7
IH
-
-
20
VT
VGT
On-state voltage
Gate trigger voltage
1.4
0.6
0.4
0.1
1.75
1.5
-
VD = 12 V; IT = 0.1 A
VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C
-
0.25
-
V
V
mA
ID, IR
Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C
0.5
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dVD/dt
Critical rate of rise of
off-state voltage
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform
Gate open circuit
GK = 100 Ω
50
200
-
130
1000
2
-
-
-
V/µs
V/µs
µs
R
tgt
tq
Gate controlled turn-on
time
Circuit commutated
turn-off time
ITM = 40 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
VD = 67% VDRM(max); Tj = 125 ˚C;
ITM = 20 A; VR = 25 V; dITM/dt = 30 A/µs;
dVD/dt = 50 V/µs; RGK = 100 Ω
-
70
-
µs
January 2002
2
Rev 1.000
Philips Semiconductors
Product specification
Thyristors
BT151F series
ITSM / A
Ptot / W
10
Ths(max) / C
a = 1.57
120
100
80
60
40
20
0
80
89
conduction form
I
TSM
time
angle
factor
a
4
2.8
2.2
1.9
1.57
I
T
degrees
30
60
90
120
180
8
6
4
2
0
T
1.9
Tj initial = 25 C max
2.2
2.8
98
4
107
116
125
0
1
2
3
4
5
6
1
10
100
1000
IF(AV) / A
Number of half cycles at 50Hz
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where
Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
a = form factor = IT(RMS)/ IT(AV)
.
ITSM / A
IT(RMS) / A
25
1000
100
10
20
15
10
5
dIT/dt limit
I
TSM
time
I
T
T
Tj initial = 25 C max
0
10ms
10us
100us
1ms
0.01
0.1
surge duration / s
1
10
T / s
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Ths ≤ 87˚C.
IT(RMS) / A
10
VGT(Tj)
VGT(25 C)
1.6
87 C
8
1.4
1.2
1
6
4
2
0
0.8
0.6
0.4
-50
0
50
Ths / C
100
150
-50
0
50
Tj / C
100
150
Fig.3. Maximum permissible rms current IT(RMS)
versus heatsink temperature Ths.
,
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
January 2002
3
Rev 1.000
Philips Semiconductors
Product specification
Thyristors
BT151F series
IT / A
IGT(Tj)
IGT(25 C)
30
25
20
15
10
5
Tj = 125 C
Tj = 25 C
3
2.5
2
Vo = 1.06 V
Rs = 0.0304 ohms
typ
max
1.5
1
0.5
0
0
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
2
VT / V
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
Zth j-hs (K/W)
10
3
2.5
2
without heatsink compound
1
0.1
with heatsink compound
1.5
1
t
P
p
D
0.01
0.001
t
0.5
0
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
-50
0
50
Tj / C
100
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
Fig.11. Transient thermal impedance Zth j-hs, versus
pulse width tp.
versus junction temperature Tj.
IH(Tj)
IH(25 C)
dVD/dt (V/us)
10000
3
2.5
2
1000
RGK = 100 Ohms
1.5
1
100
gate open circuit
0.5
0
10
-50
0
50
Tj / C
100
150
0
50
100
150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
versus junction temperature Tj.
January 2002
4
Rev 1.000
Philips Semiconductors
Product specification
Thyristors
BT151F series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.2
max
5.7
max
3.2
3.0
4.4
max
0.9
0.5
2.9 max
4.4
4.0
7.9
7.5
17
max
seating
plane
3.5 max
not tinned
4.4
13.5
min
1
2
3
0.9
0.7
M
0.4
0.55 max
1.3
2.54
5.08
top view
Fig.13. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
January 2002
5
Rev 1.000
Philips Semiconductors
Product specification
Thyristors
BT151F series
DEFINITIONS
DATA SHEET STATUS
DATA SHEET
STATUS2
PRODUCT
DEFINITIONS
STATUS3
Objective data
Development
This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data
Qualification
Production
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
2 Please consult the most recently issued datasheet before initiating or completing a design.
3 The product status of the device(s) described in this datasheet may have changed since this datasheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
January 2002
6
Rev 1.000
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