BT169D,112 [NXP]
BT169D;
| 型号： | BT169D,112 |
| 厂家： | 
NXP |
| 描述： | BT169D 栅 栅极 |
| 文件： | 总12页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BT169 series
Thyristors logic level
Rev. 04 — 23 August 2004
Product data sheet
1. Product profile
1.1 General description
Passivated, sensitive gate thyristors in a SOT54 plastic package.
1.2 Features
■ Designed to be interfaced directly to microcontrollers, logic integrated circuits and
other low power gate trigger circuits.
1.3 Applications
■ General purpose switching and phase control applications.
1.4 Quick reference data
■ VDRM, VRRM ≤ 200 V (BT169B)
■ VDRM, VRRM ≤ 400 V (BT169D)
■ VDRM, VRRM ≤ 600 V (BT169G)
■ IT(RMS) ≤ 0.8 A
■ IT(AV) ≤ 0.5 A
■ ITSM ≤ 8 A.
2. Pinning information
Table 1:
Discrete pinning
Pin
1
Description
anode (a)
gate (g)
Simplified outline
Symbol
2
3
cathode (k)
sym037
3 2 1
SOT54 (TO-92)
BT169 series
Philips Semiconductors
Thyristors logic level
3. Ordering information
Table 2:
Ordering information
Type number
Package
Name
-
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
BT169B
BT169D
BT169G
SOT54
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDRM, VRRM
repetitive peak off-state voltages
BT169B
[1]
[1]
[1]
-
-
-
-
200
400
600
0.5
V
V
V
A
BT169D
BT169G
IT(AV)
average on-state current
half sine wave;
T
lead ≤ 83 °C;
see Figure 1
IT(RMS)
ITSM
RMS on-state current
all conduction angles;
see Figure 4 and 5
-
0.8
A
non-repetitive peak on-state current half sine wave;
Tj = 25 °C prior to
surge;
see Figure 2 and 3
t = 10 ms
t = 8.3 ms
-
-
-
-
8
A
9
A
A2s
I2t
I2t for fusing
t = 10 ms
0.32
50
dIT/dt
repetitive rate of rise of on-state
current after triggering
ITM = 2 A; IG = 10 mA;
A/µs
dIG/dt = 100 mA/µs
IGM
peak gate current
-
1
A
VGM
VRGM
PGM
PG(AV)
Tstg
peak gate voltage
-
5
V
peak reverse gate voltage
peak gate power
-
5
V
-
2
W
W
°C
°C
average gate power
storage temperature
junction temperature
over any 20 ms period
-
0.1
+150
125
−40
Tj
-
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/µs.
9397 750 13512
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 23 August 2004
2 of 12
BT169 series
Philips Semiconductors
Thyristors logic level
001aab446
77
0.8
a =
T
1.57
P
tot
c(max)
(°C)
(W)
1.9
0.6
89
2.2
2.8
0.4
0.2
0
101
4
conduction form
angle
(degrees)
factor
a
30
60
90
120
180
4
113
125
2.8
2.2
1.9
1.57
α
0
0.1
0.2
0.3
0.4
0.5
0.6
I
(A)
T(AV)
a = form factor = IT(RMS)/IT(AV)
.
Fig 1. Total power dissipation as a function of average on-state current; maximum values.
001aab499
10
I
TSM
(A)
I
I
T
TSM
8
6
4
2
0
t
t
p
T initial = 25 °C max
j
2
3
1
10
10
10
n
f = 50 Hz.
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values.
9397 750 13512
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 23 August 2004
3 of 12
BT169 series
Philips Semiconductors
Thyristors logic level
001aab497
3
10
I
I
T
TSM
I
TSM
(A)
2
t
T initial = 25 °C max
10
t
p
j
10
1
10
−5
−4
−3
−2
10
10
10
t
(s)
p
tp ≤ 10 ms.
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum
values.
001aab450
001aab449
1
2
I
T(RMS)
(A)
I
T(RMS)
(A)
(1)
0.8
0.6
0.4
0.2
0
1.5
1
0.5
0
−2
−1
−50
0
50
100
150
(°C)
10
10
1
10
T
surge duration (s)
lead
f = 50 Hz; Tlead ≤ 83 °C.
(1) Tlead = 83 °C.
Fig 4. RMS on-state current as a function of surge
duration for sinusoidal currents.
Fig 5. RMS on-state current as a function of lead
temperature; maximum values.
9397 750 13512
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 23 August 2004
4 of 12
BT169 series
Philips Semiconductors
Thyristors logic level
5. Thermal characteristics
Table 4:
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-lead) thermal resistance from junction to
lead
-
-
60
K/W
Rth(j-a)
thermal resistance from junction to printed-circuit board
-
150
-
K/W
ambient
mounted; lead length = 4 mm
001aab451
2
10
Z
th(j-lead)
(K/W)
10
1
t
p
P
δ =
T
−1
10
t
t
p
T
−2
10
−5
−4
−3
−2
−1
10
10
10
10
10
1
10
t
(s)
p
Fig 6. Transient thermal impedance as a function of pulse width.
9397 750 13512
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 23 August 2004
5 of 12
BT169 series
Philips Semiconductors
Thyristors logic level
6. Characteristics
Table 5:
Characteristics
Tj = 25 °C unless otherwise stated.
Symbol Parameter
Static characteristics
IGT gate trigger current
Conditions
Min
Typ
Max
Unit
VD = 12 V; IT = 10 mA;
gate open circuit; see Figure 8
-
-
-
-
50
2
200
6
µA
mA
mA
V
IL
latching current
holding current
VD = 12 V; IGT = 0.5 mA;
R
GK = 1 kΩ; see Figure 10
VD = 12 V; IGT = 0.5 mA;
GK = 1 kΩ; see Figure 11
IH
2
5
R
VT
on-state voltage
IT = 1.2 A
1.25
1.7
VGT
gate trigger voltage
IT = 10 mA; gate open circuit;
see Figure 7
VD = 12 V
-
0.5
0.8
-
V
VD = VDRM(max); Tj = 125 °C
0.2
-
0.3
V
ID, IR
off-state leakage
current
VD = VDRM(max); VR = VRRM(max)
;
0.05
0.1
mA
Tj = 125 °C; RGK = 1 kΩ
Dynamic characteristics
dVD/dt
critical rate of rise of
off-state voltage
VDM = 67 % VDRM(max); Tj = 125 °C;
exponential waveform;
see Figure 12
RGK = 1 kΩ
500
800
25
2
-
-
-
V/µs
V/µs
µs
gate open circuit
-
-
tgt
tq
gate controlled
turn-on time
ITM = 2 A; VD = VDRM(max);
IG = 10 mA; dIG/dt = 0.1 A/µs
circuit commuted
turn-off time
VD = 67 % VDRM(max); Tj = 125 °C;
-
100
-
µs
I
TM = 1.6 A; VR = 35 V;
dITM/dt = 30 A/µs; dVD/dt = 2 V/µs;
GK = 1 kΩ
R
9397 750 13512
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 23 August 2004
6 of 12
BT169 series
Philips Semiconductors
Thyristors logic level
001aab501
001aab502
1.6
3
V
I
GT(Tj)
GT(Tj)
V
I
GT(25 °C)
GT(25 °C)
1.2
2
0.8
1
0.4
−50
0
−50
0
50
100
150
0
50
100
150
T (°C)
j
T (°C)
j
Fig 7. Normalized gate trigger voltage as a function of
junction temperature.
Fig 8. Normalized gate trigger current as a function
junction temperature.
001aab503
001aab454
3
5
I
T
I
(A)
L(Tj)
I
4
3
2
1
0
L(25 °C)
2
1
0
(1)
(2) (3)
−50
0
50
100
150
0.4
1.2
2
2.8
T (°C)
j
V
(V)
T
VO = 1.067 V.
RGK = 1 kΩ.
RS = 0.187 Ω.
(1) Tj = 125 °C; typical values.
(2) Tj = 125 °C; maximum values.
(3) Tj = 25 °C; maximum values.
Fig 9. On-state current characteristics.
Fig 10. Normalized latching current as a function of
junction temperature.
9397 750 13512
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 23 August 2004
7 of 12
BT169 series
Philips Semiconductors
Thyristors logic level
001aab504
001aab507
4
3
10
dV /dt
D
I
H(Tj)
(V/µs)
I
H(25 °C)
(1)
3
2
10
2
1
10
(2)
0
−50
10
0
50
100
150
0
50
100
150
T (°C)
j
T (°C)
j
RGK = 1 kΩ.
(1) RGK = 1 kΩ.
(2) Gate open circuit.
Fig 11. Normalized holding current as a function of
junction temperature.
Fig 12. Critical rate of rise of off-state voltage as a
function of junction temperature; typical
values.
7. Package information
Epoxy meets requirements of UL94 V-0 at 1⁄8 inch.
9397 750 13512
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 23 August 2004
8 of 12
BT169 series
Philips Semiconductors
Thyristors logic level
8. Package outline
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
1
UNIT
A
b
b
c
D
d
E
e
e
L
1
1
max.
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
mm
2.54
1.27
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
97-02-28
04-06-28
SOT54
TO-92
SC-43A
Fig 13. Package outline.
9397 750 13512
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 23 August 2004
9 of 12
BT169 series
Philips Semiconductors
Thyristors logic level
9. Revision history
Table 6:
Revision history
Document ID
Release date Data sheet status
20040823 Product data sheet
Change notice Order number
Supersedes
BT169_SERIES_4
Modifications:
-
9397 750 13512 BT169_SERIES_3
• The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
• Section 1.4 “Quick reference data”: BT169E obsolete, removed from list.
• Table 2 “Ordering information”: BT169E obsolete, removed from table.
• Table 3 “Limiting values”: BT169E obsolete, removed from table.
BT169_SERIES_3
BT169_SERIES_2
BT169_SERIES_1
20010902
20010901
19970901
Product specification
Product specification
Product specification
-
-
-
not applicable
not applicable
not applicable
BT169_SERIES_2
BT169_SERIES_1
-
9397 750 13512
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 23 August 2004
10 of 12
BT169 series
Philips Semiconductors
Thyristors logic level
10. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
12. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 13512
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 23 August 2004
11 of 12
BT169 series
Philips Semiconductors
Thyristors logic level
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package information . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information . . . . . . . . . . . . . . . . . . . . 11
3
4
5
6
7
8
9
10
11
12
13
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 23 August 2004
Document order number: 9397 750 13512
Published in The Netherlands
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