BT169D-L [NXP]
Thyristor, logic level; 晶闸管，逻辑电平
| 型号： | BT169D-L |
| 厂家： | 
NXP |
| 描述： | Thyristor, logic level |
| 文件： | 总12页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BT169D-L
Thyristor, logic level
Rev. 01 — 12 November 2007
Product data sheet
1. Product profile
1.1 General description
Passivated sensitive gate thyristor in a SOT54 plastic package.
1.2 Features
I Designed to be interfaced directly to microcontrollers, logic integrated circuits and
other low power gate trigger circuits
1.3 Applications
I General purpose switching and phase control
1.4 Quick reference data
I VDRM ≤ 400 V
I VRRM ≤ 400 V
I ITSM ≤ 8 A
I IT(RMS) ≤ 0.8 A
I IT(AV) ≤ 0.5 A
I IGT ≤ 50 µA
2. Pinning information
Table 1.
Pinning
Description
Pin
1
Simplified outline
Symbol
anode (A)
gate (G)
A
K
2
G
sym037
3
cathode (K)
3 2 1
SOT54 (TO-92)
BT169D-L
NXP Semiconductors
Thyristor, logic level
3. Ordering information
Table 2.
Ordering information
Type number
Package
Name
Description
Version
BT169D-L
TO-92
plastic single-ended leaded (through hole) package; 3 leads
SOT54
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDRM
Parameter
Conditions
Min
Max
400
400
0.5
Unit
V
[1]
[1]
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
-
-
-
VRRM
V
IT(AV)
half sine wave; Tlead ≤ 83 °C;
A
see Figure 1
IT(RMS)
ITSM
RMS on-state current
all conduction angles; see Figure 4
and 5
-
0.8
A
non-repetitive peak on-state
current
half sine wave; Tj = 25 °C prior to
surge; see Figure 2 and 3
t = 10 ms
t = 8.3 ms
t = 10 ms
-
-
-
-
8
A
9
A
A2s
I2t
I2t for fusing
0.32
50
dIT/dt
rate of rise of on-state current
ITM = 2 A; IG = 10 mA;
A/µs
dIG/dt = 100 mA/µs
IGM
peak gate current
-
1
A
VGM
VRGM
PGM
PG(AV)
Tstg
peak gate voltage
-
5
V
peak reverse gate voltage
peak gate power
-
5
V
-
2
W
W
°C
°C
average gate power
storage temperature
junction temperature
over any 20 ms period
-
0.1
+150
125
−40
Tj
-
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/µs.
BT169D-L_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 12 November 2007
2 of 12
BT169D-L
NXP Semiconductors
Thyristor, logic level
001aab446
77
0.8
a =
1.57
T
P
lead(max)
tot
(°C)
(W)
1.9
0.6
89
2.2
2.8
0.4
0.2
0
101
4
conduction form
angle
(degrees)
factor
a
30
60
90
120
180
4
113
125
2.8
2.2
1.9
1.57
α
0
0.1
0.2
0.3
0.4
0.5
0.6
I
(A)
T(AV)
Form factor a = IT(RMS) / IT(AV)
Fig 1. Total power dissipation as a function of average on-state current; maximum values
001aab499
10
I
TSM
(A)
8
6
4
2
0
I
I
T
TSM
t
t
p
T initial = 25 °C max
j
2
3
1
10
10
10
number of cycles
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT169D-L_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 12 November 2007
3 of 12
BT169D-L
NXP Semiconductors
Thyristor, logic level
001aab497
3
10
I
I
T
TSM
I
TSM
(A)
2
t
10
t
p
T initial = 25 °C max
j
10
1
10
−5
−4
−3
−2
10
10
10
t
(s)
p
tp ≤ 10 ms
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
001aab450
001aab449
1
2
I
T(RMS)
(A)
I
T(RMS)
(A)
(1)
0.8
0.6
0.4
0.2
0
1.5
1
0.5
0
−2
−1
−50
0
50
100
150
(°C)
10
10
1
10
T
surge duration (s)
lead
f = 50 Hz; Tlead ≤ 83 °C
(1) Tlead = 83 °C
Fig 4. RMS on-state current as a function of surge
duration for sinusoidal currents
Fig 5. RMS on-state current as a function of lead
temperature; maximum values
BT169D-L_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 12 November 2007
4 of 12
BT169D-L
NXP Semiconductors
Thyristor, logic level
5. Thermal characteristics
Table 4.
Symbol
Rth(j-lead)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to see Figure 6
lead
-
-
60
K/W
Rth(j-a)
thermal resistance from junction to Printed-circuit board mounted;
-
150
-
K/W
ambient
lead length = 4 mm
001aab451
2
10
Z
th(j-lead)
(K/W)
10
1
t
p
P
δ =
T
−1
10
t
t
p
T
−2
10
−5
−4
−3
−2
−1
10
10
10
10
10
1
10
t
(s)
p
Fig 6. Transient thermal impedance from junction to lead as a function of pulse width
BT169D-L_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 12 November 2007
5 of 12
BT169D-L
NXP Semiconductors
Thyristor, logic level
6. Characteristics
Table 5.
Characteristics
Tj = 25 °C unless otherwise stated.
Symbol Parameter
Static characteristics
IGT gate trigger current
Conditions
Min
Typ
Max
Unit
VD = 12 V; IT = 10 mA;
gate open circuit; see Figure 8
-
-
-
-
-
50
6
µA
mA
mA
V
IL
latching current
holding current
VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ;
see Figure 10
2
IH
VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ;
see Figure 11
2
5
VT
on-state voltage
IT = 1.2 A
1.25
1.7
VGT
gate trigger voltage
IT = 10 mA; gate open circuit;
see Figure 7
VD = 12 V
-
0.5
0.8
-
V
VD = VDRM(max); Tj = 125 °C
0.2
-
0.3
V
ID
off-state current
VD = VDRM(max); Tj = 125 °C;
0.05
0.1
mA
R
GK = 1 kΩ
Dynamic characteristics
dVD/dt
rate of rise of off-state VDM = 0.67 × VDRM(max); Tj = 125 °C;
voltage
exponential waveform; see Figure 12
RGK = 1 kΩ
500
800
25
2
-
-
-
V/µs
V/µs
µs
gate open circuit
-
-
tgt
tq
gate-controlled turn-on ITM = 2 A; VD = VDRM(max); IG = 10 mA;
time
dIG/dt = 0.1 A/µs
commutated turn-off
time
VDM = 0.67 × VDRM(max); Tj = 125 °C;
-
100
-
µs
I
TM = 1.6 A; VR = 35 V;
(dIT/dt)M = 30 A/µs; dVD/dt = 2 V/µs;
GK = 1 kΩ
R
BT169D-L_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 12 November 2007
6 of 12
BT169D-L
NXP Semiconductors
Thyristor, logic level
001aab501
001aab502
1.6
3
V
I
GT(Tj)
GT(Tj)
V
I
GT(25 °C)
GT(25 °C)
1.2
2
0.8
1
0.4
−50
0
−50
0
50
100
150
0
50
100
150
T (°C)
j
T (°C)
j
Fig 7. Normalized gate trigger voltage as a function of
junction temperature
Fig 8. Normalized gate trigger current as a function of
junction temperature
001aab503
001aab454
3
5
I
T
I
(A)
L(Tj)
I
4
3
2
1
0
L(25 °C)
2
1
0
(1)
(2) (3)
−50
0
50
100
150
0.4
1.2
2
2.8
T (°C)
j
V
(V)
T
Vo = 1.067 V
RGK = 1 kΩ
Rs = 0.187 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig 9. On-state current as a function of on-state
voltage
Fig 10. Normalized latching current as a function of
junction temperature
BT169D-L_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 12 November 2007
7 of 12
BT169D-L
NXP Semiconductors
Thyristor, logic level
001aab504
001aab507
4
3
10
dV /dt
D
I
H(Tj)
(V/µs)
I
H(25 °C)
(1)
3
2
10
2
1
10
(2)
0
−50
10
0
50
100
150
0
50
100
150
T (°C)
j
T (°C)
j
RGK = 1 kΩ
(1) RGK = 1 kΩ
(2) Gate open circuit
Fig 11. Normalized holding current as a function of
junction temperature
Fig 12. Critical rate of rise of off-state voltage as a
function of junction temperature; typical values
7. Package information
Epoxy meets requirements of UL 94 V-0 at 3.175 mm
BT169D-L_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 12 November 2007
8 of 12
BT169D-L
NXP Semiconductors
Thyristor, logic level
8. Package outline
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
1
UNIT
A
b
b
c
D
d
E
e
e
L
1
1
max.
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
mm
2.54
1.27
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
04-06-28
04-11-16
SOT54
TO-92
SC-43A
Fig 13. Package outline SOT54 (TO-92)
BT169D-L_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 12 November 2007
9 of 12
BT169D-L
NXP Semiconductors
Thyristor, logic level
9. Revision history
Table 6.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BT169D-L_1
20071112
Product data sheet
-
-
BT169D-L_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 12 November 2007
10 of 12
BT169D-L
NXP Semiconductors
Thyristor, logic level
10. Legal information
10.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
10.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
10.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
11. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BT169D-L_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 12 November 2007
11 of 12
BT169D-L
NXP Semiconductors
Thyristor, logic level
12. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
7
8
9
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package information . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
10.1
10.2
10.3
10.4
11
12
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 November 2007
Document identifier: BT169D-L_1
相关型号：
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