BT236X-600,127 [NXP]

BT236X-600;
BT236X-600,127
型号: BT236X-600,127
厂家: NXP    NXP
描述:

BT236X-600

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BT236X series F and G  
220F  
-
TO  
6 A Four-quadrant triacs  
Rev. 3 — 3 November 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Passivated triacs in a full pack, plastic package intended for use in applications requiring  
high bidirectional transient and blocking voltage capability and thermal cycling  
performance.  
1.2 Features and benefits  
Isolated package  
High ITSM  
1.3 Applications  
Lamp dimmers  
High inrush resistive loads  
Heating and static switching  
Motor speed controllers  
1.4 Quick reference data  
VDRM 600 V  
IGT 35 mA (BT236X-600_800)  
(BT236X-600_600F_600G)  
VDRM 800 V (BT236X-800_800G)  
ITSM 65 A (t = 20 ms)  
IGT 25 mA (BT236X-600F)  
IGT 50 mA (BT236X-600G_800G)  
IT(RMS) 6 A  
2. Pinning information  
Table 1.  
Pinning  
Pin  
1
Description  
Simplified outline  
Symbol  
main terminal 1 (T1)  
main terminal 2 (T2)  
gate (G)  
mb  
T2  
T1  
G
2
3
sym051  
mb  
mounting base; isolated  
1
2 3  
SOT186A (3-lead TO-220F)  
 
 
 
 
 
 
BT236X series F and G  
NXP Semiconductors  
6 A Four-quadrant triacs  
3. Ordering information  
Table 2.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
BT236X-600  
BT236X-600F  
BT236X-600G  
BT236X-800  
BT236X-800G  
3-lead  
TO-220F  
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A  
3 lead TO-220 ‘full pack’  
4. Limiting values  
Table 3.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
VDRM  
repetitive peak off-state voltage  
BT236X-600  
[1]  
[1]  
[1]  
-
-
-
-
-
-
600  
600  
600  
800  
800  
6
V
V
V
V
V
A
BT236X-600F  
BT236X-600G  
BT236X-800  
BT236X-800G  
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave; Th 88 C;  
see Figure 4 and 5  
non-repetitive peak on-state current full sine wave; Tj = 25 C prior to  
surge; see Figure 2 and 3  
t = 20 ms  
-
-
-
65  
71  
21  
A
t = 16.7 ms  
A
A2s  
I2t  
I2t for fusing  
t = 10 ms  
dIT/dt  
rate of rise of on-state current  
ITM = 12 A; IG = 0.2 A;  
dIG/dt = 0.2 A/s  
T2+ G+  
T2+ G  
T2G  
T2G+  
-
50  
50  
50  
10  
2
A/s  
A/s  
A/s  
A/s  
A
-
-
-
IGM  
peak gate current  
peak gate voltage  
peak gate power  
-
VGM  
PGM  
PG(AV)  
Tstg  
Tj  
-
5
V
-
5
W
average gate power  
storage temperature  
junction temperature  
over any 20 ms period  
-
0.5  
+150  
125  
W
40  
C  
-
C  
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The  
rate of rise of current should not exceed 6 A/s.  
BT236X_SER_F_G  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 3 — 3 November 2011  
2 of 13  
 
 
 
BT236X series F and G  
NXP Semiconductors  
6 A Four-quadrant triacs  
003aab307  
80  
10  
Ptot  
Th (max)  
(W)  
(°C)  
α
α= 180°  
89  
98  
120°  
90°  
α
60°  
5
30°  
107  
116  
125  
0
0
2
4
6
IT(RMS) (A)  
= conduction angle  
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values  
003aaa968  
80  
I
TSM  
(A)  
60  
40  
20  
0
I
I
TSM  
T
t
T
T
= 25 °C max  
j(init)  
2
3
1
10  
10  
10  
number of cycles  
f = 50 Hz  
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum  
values  
BT236X_SER_F_G  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 3 — 3 November 2011  
3 of 13  
BT236X series F and G  
NXP Semiconductors  
6 A Four-quadrant triacs  
003aab308  
103  
I
I
TSM  
t
T
ITSM  
(A)  
T
(1)  
T
= 25 °C max  
j(init)  
102  
(2)  
10  
10-5  
10-4  
10-3  
10-2  
10-1  
tp ( s)  
tp 20 ms  
(1) dIT/dt limit  
(2) T2G+ quadrant  
Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values  
003aab309  
003aab310  
25  
20  
15  
10  
5
8
6
4
2
0
IT(RMS)  
(A)  
IT(RMS)  
(A)  
88 °C  
0
10-2  
10-1  
1
10  
-50  
0
50  
100  
150  
Th (°C)  
surge duration (s)  
f = 50 Hz; Th 88 C  
Fig 4. RMS on-state current as a function of surge  
duration; maximum values  
Fig 5. RMS on-state current as a function of heatsink  
temperature; maximum values  
BT236X_SER_F_G  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 3 — 3 November 2011  
4 of 13  
BT236X series F and G  
NXP Semiconductors  
6 A Four-quadrant triacs  
5. Thermal characteristics  
Table 4.  
Symbol  
Rth(j-h)  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
4.5  
6.5  
-
Unit  
K/W  
K/W  
K/W  
[1]  
[2]  
thermal resistance from junction to see Figure 6  
heatsink  
-
-
-
-
see Figure 6  
-
Rth(j-a)  
thermal resistance from junction to in free air  
ambient  
55  
[1] Full or half cycle with heatsink compound  
[2] Full or half cycle without heatsink compound  
003aab331  
10  
(1)  
(2)  
Z
th(j-h)  
(K/W)  
1
(3)  
(4)  
1  
10  
10  
P
t
t
p
2  
10  
5  
4  
3  
2  
1  
10  
10  
10  
10  
1
10  
t
(s)  
p
(1) Unidirectional without heatsink compound  
(2) Unidirectional with heatsink compound  
(3) Bidirectional without heatsink compound  
(4) Bidirectional with heatsink compound  
Fig 6. Transient thermal impedance from junction to heatsink as a function of pulse duration  
6. Isolation characteristics  
Table 5.  
Isolation limiting values and characteristics  
Th = 25 C unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Visol(rms)  
RMS isolation voltage from all three terminals to  
external heatsink; f = 50 Hz to  
-
-
2500  
V
60 Hz; sinusoidal waveform;  
RH 65 %; clean and dust free  
Cisol  
isolation capacitance from pin 2 to external heatsink;  
f = 1 MHz  
-
10  
-
pF  
BT236X_SER_F_G  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 3 — 3 November 2011  
5 of 13  
 
 
 
 
 
BT236X series F and G  
NXP Semiconductors  
6 A Four-quadrant triacs  
7. Static characteristics  
Table 6.  
Static characteristics  
Tj = 25 C unless otherwise specified.  
Symbol Parameter  
Conditions  
BT236X-600  
BT236X-800  
BT236X-600F  
BT236X-600G  
BT236X-800G  
Unit  
Min  
Typ  
Max  
Min  
Typ  
Max  
Min  
Typ  
Max  
IGT  
gate trigger  
current  
VD = 12 V;  
IT = 0.1 A;  
see Figure 8  
T2+ G+  
T2+ G  
T2G  
T2G+  
-
-
-
-
5
8
35  
35  
35  
70  
-
-
-
-
5
8
25  
25  
25  
70  
-
-
-
-
5
8
50 mA  
50 mA  
50 mA  
100 mA  
11  
30  
11  
30  
11  
30  
IL  
latching current VD = 12 V;  
IGT = 0.1 A;  
see Figure 10  
T2+ G+  
T2+ G  
T2G  
T2G+  
-
-
-
-
-
7
16  
5
30  
45  
30  
45  
20  
-
-
-
7
16  
5
30  
45  
30  
45  
20  
-
-
-
-
-
7
16  
5
45 mA  
60 mA  
45 mA  
60 mA  
40 mA  
7
7
7
IH  
holding current VD = 12 V;  
IGT = 0.1 A;  
5
-
5
5
see Figure 11  
VT  
on-state voltage IT = 10 A;  
see Figure 9  
-
-
1.3  
0.7  
1.65  
1.5  
-
-
1.3  
0.7  
1.65  
1.5  
-
-
1.3  
0.7  
1.65  
1.5  
V
V
VGT  
gate trigger  
voltage  
VD = 12 V;  
IT = 0.1 A;  
see Figure 7  
VD = 400 V;  
IT = 0.1 A;  
Tj = 125 C  
0.25  
-
0.4  
0.1  
-
0.25  
-
0.4  
0.1  
-
0.25  
-
0.4  
0.1  
-
V
ID  
off-state current VD = VDRM(max);  
0.5  
0.5  
0.5 mA  
Tj = 125 C  
BT236X_SER_F_G  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 3 — 3 November 2011  
6 of 13  
 
BT236X series F and G  
NXP Semiconductors  
6 A Four-quadrant triacs  
8. Dynamic characteristics  
Table 7.  
Dynamic characteristics  
Conditions  
Symbol Parameter  
BT236X-600  
BT236X-800  
BT236X-600F  
BT236X-600G  
BT236X-800G  
Unit  
Min  
100  
Typ Max Min  
Typ Max Min  
Typ Max  
dVD/dt  
rate of rise of VDM = 0.67VDRM(max)  
;
250  
-
50  
250  
-
200  
250  
-
V/s  
off-state  
voltage  
Tj = 125 C;  
exponential  
waveform; gate open  
circuit  
dVcom/dt rate of  
change of  
VDM = 400 V;  
Tj = 95 C;  
-
20  
-
-
20  
-
10  
20  
-
V/s  
commutating  
voltage  
IT(RMS) = 6 A;  
dIcom/dt = 3.6 A/ms;  
gate open circuit;  
see Figure 12  
tgt  
gate-  
ITM = 12 A;  
-
2
-
-
2
-
-
2
-
s  
controlled  
VD = VDRM(max);  
turn-on time IG = 0.1 A;  
dIG/dt = 5 A/s  
001aab101  
001aae042  
1.6  
3
V
GT  
I
GT  
V
GT(25°C)  
I
GT(25°C)  
1.2  
2
(1)  
(2)  
(3)  
(4)  
0.8  
0.4  
1
(3)  
(4)  
(2)  
(1)  
0
50  
50  
0
50  
100  
150  
0
50  
100  
150  
T (°C)  
j
T (°C)  
j
(1) T2G  
(2) T2+G  
(3) T2+ G+  
(4) T2G+  
Fig 7. Normalized gate trigger voltage as a function  
of junction temperature  
Fig 8. Normalized gate trigger current as a function  
of junction temperature  
BT236X_SER_F_G  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 3 — 3 November 2011  
7 of 13  
 
BT236X series F and G  
NXP Semiconductors  
6 A Four-quadrant triacs  
001aab100  
003aab311  
3
25  
IT  
(A)  
I
L
I
20  
15  
10  
5
L(25°C)  
2
1
(1)  
(2)  
(3)  
0
50  
0
0
50  
100  
150  
0
1
2
3
V
T (V)  
T (°C)  
j
Vo = 1.26 V  
Rs = 0.0378   
(1) Tj = 125 C; typical values  
(2) Tj = 125 C; maximum values  
(3) Tj = 25 C; maximum values  
Fig 9. On-state current as a function of on-state  
voltage  
Fig 10. Normalized latching current as a function of  
junction temperature  
001aab099  
001aae043  
3
3
10  
dV/dt  
I
H
(V/μs)  
I
H(25°C)  
(1)  
2
(2)  
(3)  
2
10  
1
0
10  
dl  
/dt  
com  
(A/ms) = 10 7.9 6.1 4.7 3.6 2.8  
1
50  
0
50  
100  
150  
0
50 100  
150  
T (°C)  
j
T (°C)  
j
The triac should commutate when the dV/dt is below the  
value on the appropriate curve for pre-commutation  
dIT/dt.  
(1) Off-state dV/dt limit for BT236X-600G_800G  
(2) Off-state dV/dt limit for BT236X-600_800  
(3) Off-state dV/dt limit for BT236X-600F  
Fig 11. Normalized holding current as a function of  
junction temperature  
Fig 12. Typical commutation dV/dt as a function of  
junction temperature  
BT236X_SER_F_G  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 3 — 3 November 2011  
8 of 13  
BT236X series F and G  
NXP Semiconductors  
6 A Four-quadrant triacs  
9. Package outline  
Plastic single-ended package; isolated heatsink mounted;  
1 mounting hole; 3-lead TO-220 'full pack'  
SOT186A  
E
P
A
A
1
q
D
1
mounting  
base  
T
D
j
L
L
2
1
K
Q
b
b
1
L
2
1
2
3
b
c
w
M
e
e
1
0
5
scale  
10 mm  
DIMENSIONS (mm are the original dimensions)  
(1)  
(2)  
L
A
A
b
b
c
D
D
1
E
e
e
j
K
L
L
1
P
Q
q
T
w
b
UNIT  
mm  
2
1
1
1
2
max.  
1.1  
0.9  
1.4  
1.0  
2.7  
1.7  
0.6 14.4 3.30  
0.4 13.5 2.79  
2.6  
2.3  
4.6 2.9  
4.0 2.5  
0.9  
0.7  
3.0  
2.6  
0.7 15.8 6.5 10.3  
0.4 15.2 6.3 9.7  
3.2  
3.0  
3
5.08  
2.54  
2.5  
0.4  
Notes  
1. Terminal dimensions within this zone are uncontrolled.  
2. Both recesses are 2.5 × 0.8 max. depth  
REFERENCES  
JEDEC JEITA  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
02-04-09  
06-02-14  
SOT186A  
3-lead TO-220F  
Fig 13. Package outline SOT186A (3-lead TO-220F)  
BT236X_SER_F_G  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 3 — 3 November 2011  
9 of 13  
 
BT236X series F and G  
NXP Semiconductors  
6 A Four-quadrant triacs  
10. Revision history  
Table 8.  
Revision history  
Document ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
BT236X_SER_F_G v.3  
Modifications:  
20111103  
Product data sheet  
-
BT236X_SER_F_G v.2  
The format of this data sheet has been redesigned to comply with the new identity  
guidelines of NXP Semiconductors.  
Legal texts have been adapted to the new company name where appropriate.  
BT236X_SER_F_G v.2  
BT236X_SER_F_G v.1  
20060314  
Product data sheet  
-
BT236X_SER_F_G v.1  
20060209  
Product data sheet  
-
-
BT236X_SER_F_G  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 3 — 3 November 2011  
10 of 13  
 
BT236X series F and G  
NXP Semiconductors  
6 A Four-quadrant triacs  
11. Legal information  
11.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
malfunction of an NXP Semiconductors product can reasonably be expected  
11.2 Definitions  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
11.3 Disclaimers  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
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products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
BT236X_SER_F_G  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 3 — 3 November 2011  
11 of 13  
 
 
 
 
BT236X series F and G  
NXP Semiconductors  
6 A Four-quadrant triacs  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
NXP Semiconductors’ specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies NXP Semiconductors for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond NXP Semiconductors’  
standard warranty and NXP Semiconductors’ product specifications.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific NXP Semiconductors product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor tested  
in accordance with automotive testing or application requirements. NXP  
Semiconductors accepts no liability for inclusion and/or use of  
non-automotive qualified products in automotive equipment or applications.  
11.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without NXP Semiconductors’ warranty of the  
12. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
BT236X_SER_F_G  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 3 — 3 November 2011  
12 of 13  
 
 
BT236X series F and G  
NXP Semiconductors  
6 A Four-quadrant triacs  
13. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics . . . . . . . . . . . . . . . . . . 5  
Isolation characteristics . . . . . . . . . . . . . . . . . . 5  
Static characteristics. . . . . . . . . . . . . . . . . . . . . 6  
Dynamic characteristics . . . . . . . . . . . . . . . . . . 7  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10  
3
4
5
6
7
8
9
10  
11  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
11.1  
11.2  
11.3  
11.4  
12  
13  
Contact information. . . . . . . . . . . . . . . . . . . . . 12  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2011.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 3 November 2011  
Document identifier: BT236X_SER_F_G  
 

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