BTA2008-800E [NXP]
0.8 A Three-quadrant triacs high commutation; 0.8三象限三端双向可控硅整流高
| 型号： | BTA2008-800E |
| 厂家： | 
NXP |
| 描述： | 0.8 A Three-quadrant triacs high commutation |
| 文件： | 总12页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BTA2008 series D and E
0.8 A Three-quadrant triacs high commutation
Rev. 01 — 18 January 2008
Product data sheet
1. Product profile
1.1 General description
Passivated, guaranteed commutation, sensitive gate triacs in a SOT54 plastic package
1.2 Features
I Guaranteed commutation performance I Easily interfaced with low power drivers
at each gate sensitivity
including microcontrollers
I Sensitive gate
1.3 Applications
I Motor control
I Solenoid drivers
1.4 Quick reference data
I VDRM ≤ 600 V (BTA2008-600D)
I VDRM ≤ 600 V (BTA2008-600E)
I VDRM ≤ 800 V (BTA2008-800D)
I VDRM ≤ 800 V (BTA2008-800E)
I ITSM ≤ 9 A (t = 20 ms)
I IGT ≤ 5 mA (BTA2008-600D)
I IGT ≤ 5 mA (BTA2008-800D)
I IGT ≤ 10 mA (BTA2008-600E)
I IGT ≤ 10 mA (BTA2008-800E)
I IT(RMS) ≤ 0.8 A
2. Pinning information
Table 1.
Pinning
Pin
1
Description
Simplified outline
Graphic symbol
main terminal 2 (T2)
gate (G)
T2
T1
G
2
3
main terminal 1 (T1)
sym051
3 2 1
SOT54 (TO-92)
BTA2008 series D and E
NXP Semiconductors
0.8 A Three-quadrant triacs high commutation
3. Ordering information
Table 2.
Ordering information
Type number
Package
Name
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
BTA2008-600D
BTA2008-600E
BTA2008-800D
BTA2008-800E
TO-92
SOT54
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
600
800
0.8
Unit
[1]
VDRM
repetitive peak off-state voltage
BTA2008-600D; BTA2008-600E
BTA2008-800D; BTA2008-800E
-
-
-
V
V
A
IT(RMS)
ITSM
RMS on-state current
full sine wave; Tlead ≤ 70 °C; see
Figure 4 and 5
non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to
surge; see Figure 2 and 3
t = 20 ms
-
-
-
-
9
A
t = 16.7 ms
9.9
0.41
100
A
A2s
I2t
I2t for fusing
tp = 10 ms
dIT/dt
rate of rise of on-state current
ITM = 1.5 A; IG = 20 mA;
A/µs
dIG/dt = 0.2 A/µs
IGM
peak gate current
peak gate power
-
1
A
PGM
PG(AV)
Tstg
Tj
-
5
W
W
°C
°C
average gate power
storage temperature
junction temperature
over any 20 ms period
-
0.1
+150
125
−40
-
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/µs.
BTA2008_SER_D_E_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 18 January 2008
2 of 12
BTA2008 series D and E
NXP Semiconductors
0.8 A Three-quadrant triacs high commutation
003aac118
1.0
conduction form
Ptot
α = 180°
120°
angle
factor
a
(W)
(degrees)
0.8
30
60
90
120
180
4
90°
2.8
2.2
1.9
1.57
α
60°
30°
0.6
0.4
0.2
0.0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
IT(RMS) (A)
α = conduction angle
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values
003aac116
12
ITSM
(A)
8
I
I
TSM
T
4
0
t
1/f
= 25 °C max
T
j(init)
1
10
102
103
number of cycles
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA2008_SER_D_E_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 18 January 2008
3 of 12
BTA2008 series D and E
NXP Semiconductors
0.8 A Three-quadrant triacs high commutation
003aac119
103
I
I
ITSM
(A)
TSM
t
T
t
p
T
= 25 °C max
j(init)
(1)
102
10
10-5
10-4
10-3
10-2
10-1
tp (s)
tp ≤ 20 ms
(1) dIT/dt limit
Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values
003aac117
003aac115
12
IT(RMS)
(A)
1
IT(RMS)
(A)
10
0.8
0.6
0.4
0.2
0
8
6
4
2
0
10-2
10-1
1
10
-50
0
50
100
150
lead (°C)
surge duration (s)
T
f = 50 Hz
Tlead = 70 °C
Fig 4. RMS on-state current as a function of surge
duration; maximum values
Fig 5. RMS on-state current as a function of lead
temperature; maximum values
BTA2008_SER_D_E_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 18 January 2008
4 of 12
BTA2008 series D and E
NXP Semiconductors
0.8 A Three-quadrant triacs high commutation
5. Thermal characteristics
Table 4.
Symbol
Rth(j-lead)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to full cycle; see Figure 6
lead
-
-
60
K/W
Rth(j-a)
thermal resistance from junction to printed circuit board
-
150
-
K/W
ambient
mounted; lead length 4 mm
003aac206
2
10
Z
th(j-lead)
(K/W)
10
1
P
−1
10
t
t
p
−2
10
−5
−4
−3
−2
−1
10
10
10
10
1
10
10
t
(s)
p
Fig 6. Transient thermal impedance from junction to lead as a function of pulse duration
BTA2008_SER_D_E_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 18 January 2008
5 of 12
BTA2008 series D and E
NXP Semiconductors
0.8 A Three-quadrant triacs high commutation
6. Static characteristics
Table 5.
Static characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter Conditions
BTA2008-600D
BTA2008-800D
BTA2008-600E
BTA2008-800E
Unit
Min
Typ
Max
Min
Typ
Max
IGT
gate trigger current VD = 12 V; IT = 0.1 A; see Figure 8
T2+ G+
T2+ G−
T2− G−
0.25
0.25
0.25
-
-
-
5
5
5
0.5
0.5
0.5
-
-
-
10
10
10
mA
mA
mA
IL
latching current
VD = 12 V; IGT = 0.1 A;
see Figure 10
T2+ G+
T2+ G−
T2− G−
-
-
-
-
-
-
-
-
10
20
10
10
-
-
-
-
-
-
-
-
12
20
12
12
mA
mA
mA
mA
IH
holding current
on-state voltage
VD = 12 V; IGT = 0.1 A;
see Figure 11
VT
IT = 0.85 A; see Figure 9
-
-
1.35
0.9
0.3
0.1
1.6
2
-
-
1.35
0.9
0.3
0.1
1.6
2
V
V
V
VGT
gate trigger voltage VD = 12 V; IT = 0.1 A; see Figure 7
VD = 400 V; IT = 0.1 A; Tj = 125 °C
0.2
-
-
0.2
-
-
ID
off-state current
VD = VDRM(max); Tj = 125 °C
0.5
0.5 mA
BTA2008_SER_D_E_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 18 January 2008
6 of 12
BTA2008 series D and E
NXP Semiconductors
0.8 A Three-quadrant triacs high commutation
7. Dynamic characteristics
Table 6.
Dynamic characteristics
Symbol Parameter
Conditions
BTA2008-600D
BTA2008-800D
BTA2008-600E
BTA2008-800E
Unit
Min
Typ Max Min
Typ Max
dVD/dt
rate of rise of off-state
voltage
VDM = 0.67 × VDRM(max)
Tj = 125 °C; exponential
;
200
-
-
600
-
-
V/µs
waveform; gate open circuit
dIcom/dt rate of change of
commutating current
VDM = 400 V; Tj = 125 °C;
0.5
-
-
1.6
-
-
A/ms
IT(RMS) = 0.8 A;
dV/dt = 10 V/µs; gate open
circuit
tgt
gate-controlled turn-on time ITM = 1 A; VD = VDRM(max)
;
-
2
-
-
2
-
µs
IG = 0.1 A; dIG/dt = 5 A/µs
001aab101
001aac669
1.6
3
(1)
V
I
GT
GT
V
I
GT(25°C)
GT(25°C)
1.2
2
(2)
(3)
0.8
0.4
1
0
−50
0
50
100
150
−50
0
50
100
150
T (°C)
j
T (°C)
j
(1) T2− G−
(2) T2+ G−
(3) T2+ G+
Fig 7. Normalized gate trigger voltage as a function
of junction temperature
Fig 8. Normalized gate trigger current as a function
of junction temperature
BTA2008_SER_D_E_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 18 January 2008
7 of 12
BTA2008 series D and E
NXP Semiconductors
0.8 A Three-quadrant triacs high commutation
003aac114
001aab100
3
1
IT
(A)
I
L
0.8
I
L(25°C)
2
0.6
(1)
(2)
(3)
0.4
1
0.2
0
0
−50
0
0.5
1
1.5
2
0
50
100
150
V
T (V)
T (°C)
j
Vo = 0.835 V
Rs = 0.5 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig 9. On-state current as a function of on-state
voltage
Fig 10. Normalized latching current as a function of
junction temperature
001aab099
3
I
H
I
H(25°C)
2
1
0
−50
0
50
100
150
T (°C)
j
Fig 11. Normalized holding current as a function of junction temperature
BTA2008_SER_D_E_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 18 January 2008
8 of 12
BTA2008 series D and E
NXP Semiconductors
0.8 A Three-quadrant triacs high commutation
8. Package outline
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
max.
1
UNIT
A
b
b
c
D
d
E
e
e
L
1
1
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
14.5
2.5
mm
2.54
1.27
12.7
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
04-06-28
04-11-16
SOT54
TO-92
SC-43A
Fig 12. Package outline SOT54 (TO-92)
BTA2008_SER_D_E_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 18 January 2008
9 of 12
BTA2008 series D and E
NXP Semiconductors
0.8 A Three-quadrant triacs high commutation
9. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BTA2008_SER_D_E_1
20080118
Product data sheet
-
-
BTA2008_SER_D_E_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 18 January 2008
10 of 12
BTA2008 series D and E
NXP Semiconductors
0.8 A Three-quadrant triacs high commutation
10. Legal information
10.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
10.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
10.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
11. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BTA2008_SER_D_E_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 18 January 2008
11 of 12
BTA2008 series D and E
NXP Semiconductors
0.8 A Three-quadrant triacs high commutation
12. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
7
8
9
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Static characteristics. . . . . . . . . . . . . . . . . . . . . 6
Dynamic characteristics . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
10.1
10.2
10.3
10.4
11
12
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 18 January 2008
Document identifier: BTA2008_SER_D_E_1
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